DE1942810C3 - Integrierte Hall-Effektanordnung - Google Patents
Integrierte Hall-EffektanordnungInfo
- Publication number
- DE1942810C3 DE1942810C3 DE1942810A DE1942810A DE1942810C3 DE 1942810 C3 DE1942810 C3 DE 1942810C3 DE 1942810 A DE1942810 A DE 1942810A DE 1942810 A DE1942810 A DE 1942810A DE 1942810 C3 DE1942810 C3 DE 1942810C3
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor body
- hall element
- hall effect
- integrated
- hall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005355 Hall effect Effects 0.000 title claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000004020 conductor Substances 0.000 claims description 11
- 239000003302 ferromagnetic material Substances 0.000 claims description 2
- 230000005291 magnetic effect Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005294 ferromagnetic effect Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6812451A NL6812451A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1968-08-31 | 1968-08-31 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1942810A1 DE1942810A1 (de) | 1970-03-05 |
| DE1942810B2 DE1942810B2 (de) | 1977-10-06 |
| DE1942810C3 true DE1942810C3 (de) | 1978-06-01 |
Family
ID=19804517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1942810A Expired DE1942810C3 (de) | 1968-08-31 | 1969-08-22 | Integrierte Hall-Effektanordnung |
Country Status (12)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4305439A1 (de) * | 1993-02-23 | 1994-08-25 | Eldo Elektronik Service Gmbh | Umkapselung für ein elektronisches Bauelement |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3800193A (en) * | 1972-09-05 | 1974-03-26 | Ibm | Magnetic sensing device |
| JPS529515B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-11-08 | 1977-03-16 | ||
| US3845445A (en) * | 1973-11-12 | 1974-10-29 | Ibm | Modular hall effect device |
| DE3172553D1 (en) * | 1980-11-28 | 1985-11-07 | Toshiba Kk | Method for manufacturing a module for a fiber optic link |
| DE3243039A1 (de) * | 1982-11-22 | 1984-05-24 | Telefunken electronic GmbH, 6000 Frankfurt | Magnetempfindliches halbleiterbauelement |
| US5017804A (en) * | 1987-07-23 | 1991-05-21 | Siliconix Incorporated | Hall sensing of bond wire current |
| US5587857A (en) * | 1994-10-18 | 1996-12-24 | International Business Machines Corporation | Silicon chip with an integrated magnetoresistive head mounted on a slider |
| US5883567A (en) * | 1997-10-10 | 1999-03-16 | Analog Devices, Inc. | Packaged integrated circuit with magnetic flux concentrator |
| CN109387681B (zh) * | 2018-12-28 | 2024-08-13 | 杭州思泰微电子有限公司 | 基于磁场检测的双通道电流传感器结构 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2877394A (en) * | 1959-03-10 | Hall effect device | ||
| GB1118284A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | ||||
| US3050698A (en) * | 1960-02-12 | 1962-08-21 | Bell Telephone Labor Inc | Semiconductor hall effect devices |
| CH385681A (de) * | 1960-09-29 | 1964-12-15 | Siemens Ag | Einrichtung zur Übermittlung von Steuerbefehlen, insbesondere für Förderanlagen oder dergleichen |
| US3239786A (en) * | 1963-05-09 | 1966-03-08 | Gen Precision Inc | Hall generator and method of fabrication |
| US3413713A (en) * | 1965-06-18 | 1968-12-03 | Motorola Inc | Plastic encapsulated transistor and method of making same |
-
1968
- 1968-08-31 NL NL6812451A patent/NL6812451A/xx unknown
-
1969
- 1969-08-22 DE DE1942810A patent/DE1942810C3/de not_active Expired
- 1969-08-25 US US852644A patent/US3667000A/en not_active Expired - Lifetime
- 1969-08-28 NO NO3446/69A patent/NO125420B/no unknown
- 1969-08-28 DK DK461869AA patent/DK124365B/da unknown
- 1969-08-28 CH CH1307769A patent/CH502703A/de not_active IP Right Cessation
- 1969-08-28 GB GB42929/69A patent/GB1270316A/en not_active Expired
- 1969-08-28 AT AT823969A patent/AT308199B/de not_active IP Right Cessation
- 1969-08-28 SE SE11960/69A patent/SE341226B/xx unknown
- 1969-08-29 ES ES370984A patent/ES370984A1/es not_active Expired
- 1969-08-29 BE BE738220D patent/BE738220A/xx unknown
- 1969-08-29 FR FR6929668A patent/FR2017194A1/fr not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4305439A1 (de) * | 1993-02-23 | 1994-08-25 | Eldo Elektronik Service Gmbh | Umkapselung für ein elektronisches Bauelement |
| DE4305439C2 (de) * | 1993-02-23 | 1999-10-21 | Eldo Elektronik Service Gmbh | Umkapselung für einen elektronischen Sensor zur Feldstärkemessung |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1942810A1 (de) | 1970-03-05 |
| AT308199B (de) | 1973-06-25 |
| US3667000A (en) | 1972-05-30 |
| CH502703A (de) | 1971-01-31 |
| BE738220A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-03-02 |
| NO125420B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-09-04 |
| DE1942810B2 (de) | 1977-10-06 |
| DK124365B (da) | 1972-10-09 |
| ES370984A1 (es) | 1971-08-01 |
| NL6812451A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-03-03 |
| GB1270316A (en) | 1972-04-12 |
| SE341226B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1971-12-20 |
| FR2017194A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-05-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| EHJ | Ceased/non-payment of the annual fee |