DE1805971B2 - - Google Patents

Info

Publication number
DE1805971B2
DE1805971B2 DE19681805971 DE1805971A DE1805971B2 DE 1805971 B2 DE1805971 B2 DE 1805971B2 DE 19681805971 DE19681805971 DE 19681805971 DE 1805971 A DE1805971 A DE 1805971A DE 1805971 B2 DE1805971 B2 DE 1805971B2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19681805971
Other languages
German (de)
Other versions
DE1805971A1 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DE19681805971 priority Critical patent/DE1805971A1/de
Priority to NL6915612A priority patent/NL6915612A/xx
Priority to CA065385A priority patent/CA918547A/en
Priority to FR6936915A priority patent/FR2021902A1/fr
Priority to AT1014869A priority patent/AT293341B/de
Priority to GB1239515D priority patent/GB1239515A/en
Priority to JP8654669A priority patent/JPS5324362B1/ja
Publication of DE1805971A1 publication Critical patent/DE1805971A1/de
Publication of DE1805971B2 publication Critical patent/DE1805971B2/de
Priority to US276306A priority patent/US3876388A/en
Priority to JP48057091A priority patent/JPS5117483B1/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
DE19681805971 1968-10-30 1968-10-30 Verfahren zum Veraendern der kristallinen Struktur eines rohrfoermigen Ausgangskristall und/oder zum Veraendern der Konzentration eines in dem rohrfoermigen Ausgangskristall enthaltenen Fremdstoffes Withdrawn DE1805971A1 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE19681805971 DE1805971A1 (de) 1968-10-30 1968-10-30 Verfahren zum Veraendern der kristallinen Struktur eines rohrfoermigen Ausgangskristall und/oder zum Veraendern der Konzentration eines in dem rohrfoermigen Ausgangskristall enthaltenen Fremdstoffes
NL6915612A NL6915612A (enrdf_load_stackoverflow) 1968-10-30 1969-10-15
CA065385A CA918547A (en) 1968-10-30 1969-10-21 Treatment of hollow tubular crystals
FR6936915A FR2021902A1 (enrdf_load_stackoverflow) 1968-10-30 1969-10-28
AT1014869A AT293341B (de) 1968-10-30 1969-10-28 Verfahren zum Verändern der kristallinen Struktur eines rohrförmigen Ausgangskristalles
GB1239515D GB1239515A (enrdf_load_stackoverflow) 1968-10-30 1969-10-29
JP8654669A JPS5324362B1 (enrdf_load_stackoverflow) 1968-10-30 1969-10-30
US276306A US3876388A (en) 1968-10-30 1972-07-31 Method of varying the crystalline structure of or the concentration of impurities contained in a tubular starting crystal or both using diagonal zone melting
JP48057091A JPS5117483B1 (enrdf_load_stackoverflow) 1968-10-30 1973-05-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681805971 DE1805971A1 (de) 1968-10-30 1968-10-30 Verfahren zum Veraendern der kristallinen Struktur eines rohrfoermigen Ausgangskristall und/oder zum Veraendern der Konzentration eines in dem rohrfoermigen Ausgangskristall enthaltenen Fremdstoffes

Publications (2)

Publication Number Publication Date
DE1805971A1 DE1805971A1 (de) 1970-08-20
DE1805971B2 true DE1805971B2 (enrdf_load_stackoverflow) 1970-11-19

Family

ID=5711899

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681805971 Withdrawn DE1805971A1 (de) 1968-10-30 1968-10-30 Verfahren zum Veraendern der kristallinen Struktur eines rohrfoermigen Ausgangskristall und/oder zum Veraendern der Konzentration eines in dem rohrfoermigen Ausgangskristall enthaltenen Fremdstoffes

Country Status (7)

Country Link
JP (2) JPS5324362B1 (enrdf_load_stackoverflow)
AT (1) AT293341B (enrdf_load_stackoverflow)
CA (1) CA918547A (enrdf_load_stackoverflow)
DE (1) DE1805971A1 (enrdf_load_stackoverflow)
FR (1) FR2021902A1 (enrdf_load_stackoverflow)
GB (1) GB1239515A (enrdf_load_stackoverflow)
NL (1) NL6915612A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
AT293341B (de) 1971-10-11
JPS5324362B1 (enrdf_load_stackoverflow) 1978-07-20
FR2021902A1 (enrdf_load_stackoverflow) 1970-07-24
JPS5117483B1 (enrdf_load_stackoverflow) 1976-06-02
GB1239515A (enrdf_load_stackoverflow) 1971-07-14
DE1805971A1 (de) 1970-08-20
CA918547A (en) 1973-01-09
NL6915612A (enrdf_load_stackoverflow) 1970-05-04

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Legal Events

Date Code Title Description
E771 Valid patent as to the heymanns-index 1977, willingness to grant licences
EHJ Ceased/non-payment of the annual fee