DE1764384A1 - Halbleiterdiode - Google Patents
HalbleiterdiodeInfo
- Publication number
- DE1764384A1 DE1764384A1 DE19681764384 DE1764384A DE1764384A1 DE 1764384 A1 DE1764384 A1 DE 1764384A1 DE 19681764384 DE19681764384 DE 19681764384 DE 1764384 A DE1764384 A DE 1764384A DE 1764384 A1 DE1764384 A1 DE 1764384A1
- Authority
- DE
- Germany
- Prior art keywords
- diode
- intermediate layer
- length
- diode according
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000969 carrier Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 108091007416 X-inactive specific transcript Proteins 0.000 description 1
- 108091035715 XIST (gene) Proteins 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
- G01T3/08—Measuring neutron radiation with semiconductor detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE7518/67A SE320435B (enrdf_load_stackoverflow) | 1967-05-29 | 1967-05-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1764384A1 true DE1764384A1 (de) | 1972-03-23 |
Family
ID=20271583
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19681764384 Pending DE1764384A1 (de) | 1967-05-29 | 1968-05-28 | Halbleiterdiode |
Country Status (8)
Country | Link |
---|---|
BE (1) | BE715783A (enrdf_load_stackoverflow) |
CH (1) | CH485331A (enrdf_load_stackoverflow) |
DE (1) | DE1764384A1 (enrdf_load_stackoverflow) |
FR (1) | FR1570387A (enrdf_load_stackoverflow) |
GB (1) | GB1225637A (enrdf_load_stackoverflow) |
IL (1) | IL30068A0 (enrdf_load_stackoverflow) |
NL (1) | NL6807552A (enrdf_load_stackoverflow) |
SE (1) | SE320435B (enrdf_load_stackoverflow) |
-
1967
- 1967-05-29 SE SE7518/67A patent/SE320435B/xx unknown
-
1968
- 1968-05-24 IL IL6830068A patent/IL30068A0/xx unknown
- 1968-05-27 CH CH782368A patent/CH485331A/de not_active IP Right Cessation
- 1968-05-28 DE DE19681764384 patent/DE1764384A1/de active Pending
- 1968-05-28 GB GB1225637D patent/GB1225637A/en not_active Expired
- 1968-05-28 BE BE715783D patent/BE715783A/xx unknown
- 1968-05-29 NL NL6807552A patent/NL6807552A/xx unknown
- 1968-07-02 FR FR1570387D patent/FR1570387A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
IL30068A0 (en) | 1968-07-25 |
GB1225637A (enrdf_load_stackoverflow) | 1971-03-17 |
FR1570387A (enrdf_load_stackoverflow) | 1969-06-06 |
NL6807552A (enrdf_load_stackoverflow) | 1968-12-02 |
BE715783A (enrdf_load_stackoverflow) | 1968-10-16 |
CH485331A (de) | 1970-01-31 |
SE320435B (enrdf_load_stackoverflow) | 1970-02-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE2753613B2 (de) | Isolierschicht-Feldeffekttransistor | |
DE2160427C3 (enrdf_load_stackoverflow) | ||
DE1614222B2 (de) | Halbleitervorrichtung zum detektieren und/oder messen von strahlung | |
DE2837762C2 (de) | Verfahren zur Herstellung von Triacs | |
DE1764384A1 (de) | Halbleiterdiode | |
DE2710701C3 (de) | Halbleiterbauelement | |
DE69626299T2 (de) | Halbleiteranordnung und verfahren zur herstellung | |
DE3425309A1 (de) | Strahlungsempfindliche halbleiteranordnung | |
DE1055144B (de) | Kernbatterie zur Umwandlung von radioaktiver Strahlungsenergie in elektrische Energie | |
DE2911011A1 (de) | Elektrolumineszente und lichterkennende dioden sowie verfahren zur herstellung dieser dioden | |
DE2012945C3 (de) | Halbleiterbauelement | |
DE3151212A1 (de) | Halbleiterelement | |
DE3105517C2 (de) | Mit einer profilierten Oberfläche versehener Verbundsupraleiter | |
DE1614184C3 (de) | Verfahren zum Herstellen eines Halbleiterschaltelements | |
DE1648614C2 (de) | Verfahren zum Herstellen eines mechanoelektrischen Wandlers | |
DE3537802A1 (de) | Halbleiterdetektor zum feststellen thermischer neutronen | |
DE2328772A1 (de) | Siedereaktor | |
DE955080C (de) | Halbleitersystem mit nichtlinearer Strom-Spannungs-Charakteristik | |
DE1809303A1 (de) | Verfahren zur Herstellung lichtemittierender Halbleiterbauelemente | |
DE1907971B2 (de) | Halbleiterdetektorelement und Halbleiterdetektor | |
AT206937B (de) | Halbleitervorrichtung und Verfahren zu deren Herstellung | |
DE2320412C3 (de) | Verfahren zur Herstellung und Sortierung abschaltbarer Thyristoren | |
DE2131755C3 (de) | Verfahren zur Herstellung eines Halbleiter-Teilchendetektors mit NIP-Struktur und Verwendung von danach hergestellten Detektoren | |
DE1012697B (de) | p-s-n- und p-i-n-Gleichrichter | |
DE1277457B (de) | Strahlungsnachweisgeraet |