DE112023000750T5 - Signalverarbeitungsschaltung und lichtdetektionsvorrichtung - Google Patents
Signalverarbeitungsschaltung und lichtdetektionsvorrichtung Download PDFInfo
- Publication number
- DE112023000750T5 DE112023000750T5 DE112023000750.0T DE112023000750T DE112023000750T5 DE 112023000750 T5 DE112023000750 T5 DE 112023000750T5 DE 112023000750 T DE112023000750 T DE 112023000750T DE 112023000750 T5 DE112023000750 T5 DE 112023000750T5
- Authority
- DE
- Germany
- Prior art keywords
- circuit
- comparison circuit
- terminal
- signal
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012545 processing Methods 0.000 title claims abstract description 65
- 238000001514 detection method Methods 0.000 title claims description 82
- 230000008878 coupling Effects 0.000 claims abstract description 55
- 238000010168 coupling process Methods 0.000 claims abstract description 55
- 238000005859 coupling reaction Methods 0.000 claims abstract description 55
- 238000010791 quenching Methods 0.000 claims description 33
- 230000000171 quenching effect Effects 0.000 claims description 32
- 239000003990 capacitor Substances 0.000 claims description 17
- 230000008859 change Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 65
- 230000004048 modification Effects 0.000 description 43
- 238000012986 modification Methods 0.000 description 43
- 238000010586 diagram Methods 0.000 description 20
- 230000004044 response Effects 0.000 description 11
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- 230000003071 parasitic effect Effects 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000008054 signal transmission Effects 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
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- 238000013459 approach Methods 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
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- 239000011159 matrix material Substances 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
- H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J1/46—Electric circuits using a capacitor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/444—Compensating; Calibrating, e.g. dark current, temperature drift, noise reduction or baseline correction; Adjusting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/446—Photodiode
- G01J2001/4466—Avalanche
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-014282 | 2022-02-01 | ||
| JP2022014282 | 2022-02-01 | ||
| PCT/JP2023/002700 WO2023149382A1 (ja) | 2022-02-01 | 2023-01-27 | 信号処理回路、及び、光検出装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112023000750T5 true DE112023000750T5 (de) | 2024-11-21 |
Family
ID=87552375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112023000750.0T Pending DE112023000750T5 (de) | 2022-02-01 | 2023-01-27 | Signalverarbeitungsschaltung und lichtdetektionsvorrichtung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250116551A1 (https=) |
| JP (1) | JPWO2023149382A1 (https=) |
| CN (1) | CN118647844A (https=) |
| DE (1) | DE112023000750T5 (https=) |
| WO (1) | WO2023149382A1 (https=) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017538281A (ja) | 2014-09-22 | 2017-12-21 | ゼネラル・エレクトリック・カンパニイ | 半導体フォトマルチプライヤ |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07306133A (ja) * | 1994-03-14 | 1995-11-21 | Hitachi Electron Eng Co Ltd | 微粒子検出器 |
| EP1875271B1 (en) * | 2005-04-22 | 2011-06-22 | Koninklijke Philips Electronics N.V. | Digital silicon photomultiplier for tof-pet |
| JP7271091B2 (ja) * | 2018-05-10 | 2023-05-11 | 浜松ホトニクス株式会社 | 裏面入射型半導体光検出装置 |
| US10158038B1 (en) * | 2018-05-17 | 2018-12-18 | Hi Llc | Fast-gated photodetector architectures comprising dual voltage sources with a switch configuration |
| JP7170448B2 (ja) * | 2018-07-25 | 2022-11-14 | キヤノン株式会社 | 撮像素子、撮像装置及び信号処理方法 |
| US11340109B2 (en) * | 2019-05-24 | 2022-05-24 | Infineon Technologies Ag | Array of single-photon avalanche diode (SPAD) microcells and operating the same |
| CN112945379B (zh) * | 2021-02-03 | 2024-03-12 | 中国科学院长春光学精密机械与物理研究所 | 一种单光子探测器死时间设置与噪声滤除的系统 |
-
2023
- 2023-01-27 JP JP2023578538A patent/JPWO2023149382A1/ja active Pending
- 2023-01-27 WO PCT/JP2023/002700 patent/WO2023149382A1/ja not_active Ceased
- 2023-01-27 DE DE112023000750.0T patent/DE112023000750T5/de active Pending
- 2023-01-27 US US18/834,338 patent/US20250116551A1/en active Pending
- 2023-01-27 CN CN202380019711.0A patent/CN118647844A/zh active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017538281A (ja) | 2014-09-22 | 2017-12-21 | ゼネラル・エレクトリック・カンパニイ | 半導体フォトマルチプライヤ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2023149382A1 (https=) | 2023-08-10 |
| CN118647844A (zh) | 2024-09-13 |
| US20250116551A1 (en) | 2025-04-10 |
| WO2023149382A1 (ja) | 2023-08-10 |
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