DE112022004546T5 - Verfahren zur messung der höhe eines fremdkörpers und vorrichtung mit einem strahl geladener teilchen - Google Patents

Verfahren zur messung der höhe eines fremdkörpers und vorrichtung mit einem strahl geladener teilchen Download PDF

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Publication number
DE112022004546T5
DE112022004546T5 DE112022004546.9T DE112022004546T DE112022004546T5 DE 112022004546 T5 DE112022004546 T5 DE 112022004546T5 DE 112022004546 T DE112022004546 T DE 112022004546T DE 112022004546 T5 DE112022004546 T5 DE 112022004546T5
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DE
Germany
Prior art keywords
foreign body
measurement target
image
height
orientation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022004546.9T
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German (de)
English (en)
Inventor
Wei Sun
Naomasa Suzuki
Nobuhiro Okai
Keiichiro Hitomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
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Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of DE112022004546T5 publication Critical patent/DE112022004546T5/de
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/04—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/40—Imaging
    • G01N2223/401—Imaging image processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/40—Imaging
    • G01N2223/418—Imaging electron microscope
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/633—Specific applications or type of materials thickness, density, surface weight (unit area)
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • Quality & Reliability (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DE112022004546.9T 2022-01-26 2022-01-26 Verfahren zur messung der höhe eines fremdkörpers und vorrichtung mit einem strahl geladener teilchen Pending DE112022004546T5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/002804 WO2023144909A1 (ja) 2022-01-26 2022-01-26 異物高さの測定方法及び荷電粒子線装置

Publications (1)

Publication Number Publication Date
DE112022004546T5 true DE112022004546T5 (de) 2024-08-14

Family

ID=87471241

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022004546.9T Pending DE112022004546T5 (de) 2022-01-26 2022-01-26 Verfahren zur messung der höhe eines fremdkörpers und vorrichtung mit einem strahl geladener teilchen

Country Status (5)

Country Link
US (1) US20250003898A1 (https=)
JP (1) JP7604684B2 (https=)
KR (1) KR102853003B1 (https=)
DE (1) DE112022004546T5 (https=)
WO (1) WO2023144909A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024106540A (ja) * 2023-01-27 2024-08-08 株式会社ディスコ 切削装置および切削方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6353222B1 (en) 1998-09-03 2002-03-05 Applied Materials, Inc. Determining defect depth and contour information in wafer structures using multiple SEM images

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6197510A (ja) * 1984-10-19 1986-05-16 Hitachi Ltd 走査型電子顕微鏡による立体形状測定装置
JP2004214060A (ja) * 2003-01-06 2004-07-29 Hitachi High-Technologies Corp 走査電子顕微鏡及びそれを用いた試料観察方法
JP4778778B2 (ja) * 2005-11-04 2011-09-21 株式会社日立ハイテクノロジーズ 半導体デバイスのモニタリング方法およびモニタリング装置
WO2019180760A1 (ja) 2018-03-19 2019-09-26 株式会社 日立ハイテクノロジーズ パターン計測装置、及び計測を実行させるプログラムを記憶する非一時的なコンピュータ可読媒体
CN112805607A (zh) 2018-10-09 2021-05-14 奥林巴斯株式会社 计测装置、计测方法和显微镜系统
WO2020157860A1 (ja) 2019-01-30 2020-08-06 株式会社日立ハイテク 荷電粒子線システム及び荷電粒子線撮像方法
US12561823B2 (en) 2019-02-15 2026-02-24 Hitachi High-Tech Corporation Structure estimation system and structure estimation program for estimating height of structure based on data from charged particle beam device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6353222B1 (en) 1998-09-03 2002-03-05 Applied Materials, Inc. Determining defect depth and contour information in wafer structures using multiple SEM images

Also Published As

Publication number Publication date
JP7604684B2 (ja) 2024-12-23
KR20240104150A (ko) 2024-07-04
JPWO2023144909A1 (https=) 2023-08-03
WO2023144909A1 (ja) 2023-08-03
KR102853003B1 (ko) 2025-09-01
US20250003898A1 (en) 2025-01-02

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