DE112022000727T5 - Halbleiterbauteil - Google Patents

Halbleiterbauteil Download PDF

Info

Publication number
DE112022000727T5
DE112022000727T5 DE112022000727.3T DE112022000727T DE112022000727T5 DE 112022000727 T5 DE112022000727 T5 DE 112022000727T5 DE 112022000727 T DE112022000727 T DE 112022000727T DE 112022000727 T5 DE112022000727 T5 DE 112022000727T5
Authority
DE
Germany
Prior art keywords
control element
output
semiconductor
terminal
side terminals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022000727.3T
Other languages
German (de)
English (en)
Inventor
Tomohira Kikuchi
Hiroaki Matsubara
Yoshizo OSUMI
Moe Yamaguchi
Ryohei Umeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE112022000727T5 publication Critical patent/DE112022000727T5/de
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/411Chip-supporting parts, e.g. die pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/421Shapes or dispositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/421Shapes or dispositions
    • H10W70/424Cross-sectional shapes
    • H10W70/427Bent parts
    • H10W70/429Bent parts being the outer leads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/481Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/811Multiple chips on leadframes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/60Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/411Chip-supporting parts, e.g. die pads
    • H10W70/417Bonding materials between chips and die pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/352Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/759Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent discrete passive device

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Inverter Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
DE112022000727.3T 2021-01-19 2022-01-06 Halbleiterbauteil Pending DE112022000727T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-006268 2021-01-19
JP2021006268 2021-01-19
PCT/JP2022/000250 WO2022158304A1 (ja) 2021-01-19 2022-01-06 半導体装置

Publications (1)

Publication Number Publication Date
DE112022000727T5 true DE112022000727T5 (de) 2023-11-23

Family

ID=82548798

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022000727.3T Pending DE112022000727T5 (de) 2021-01-19 2022-01-06 Halbleiterbauteil

Country Status (5)

Country Link
US (1) US20240030212A1 (https=)
JP (1) JPWO2022158304A1 (https=)
CN (1) CN116802799A (https=)
DE (1) DE112022000727T5 (https=)
WO (1) WO2022158304A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016207714A (ja) 2015-04-16 2016-12-08 ローム株式会社 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5375952B2 (ja) * 2009-03-31 2013-12-25 日本電気株式会社 半導体装置
JP5724573B2 (ja) * 2011-04-19 2015-05-27 日亜化学工業株式会社 発光装置
JP5714455B2 (ja) * 2011-08-31 2015-05-07 ルネサスエレクトロニクス株式会社 半導体集積回路
JP6428506B2 (ja) * 2015-06-29 2018-11-28 株式会社デンソー スイッチング素子の駆動回路
JP6832094B2 (ja) * 2016-08-05 2021-02-24 ローム株式会社 パワーモジュール及びモータ駆動回路
JP7038570B2 (ja) * 2018-03-02 2022-03-18 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016207714A (ja) 2015-04-16 2016-12-08 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
CN116802799A (zh) 2023-09-22
US20240030212A1 (en) 2024-01-25
JPWO2022158304A1 (https=) 2022-07-28
WO2022158304A1 (ja) 2022-07-28

Similar Documents

Publication Publication Date Title
DE112021006381B4 (de) Halbleiterbauteil
DE112012007339B3 (de) Halbleitermodul und Verfahren zur Herstellung des Halbleitermoduls
DE102007013186B4 (de) Halbleitermodul mit Halbleiterchips und Verfahren zur Herstellung desselben
DE10221891B4 (de) Leistungshalbleitervorrichtung
DE112021007737B4 (de) Halbleitermodul
DE102014116383B4 (de) Halbleitergehäuse umfassend ein transistor-chip-modul und ein treiber-chip-modul sowie verfahren zu dessen herstellung
DE102010000208B4 (de) Halbleitervorrichtung mit monolithischem Halbleiterschalter und Verfahren zu dessen Herstellung
DE102018123857A1 (de) Halbleiterchippassage mit Halbleiterchip und Anschlussrahmen, die zwischen zwei Substraten angeordnet sind
DE10149093A1 (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
DE102014116382B4 (de) Halbleitergehäuse mit zwei Halbleitermodulen und sich seitlich erstreckenden Verbindern und Verfahren zu dessen Herstellung
DE112017007415T5 (de) Halbleiterbauelement, Verfahren zur Herstellung desselben und Leistungswandlervorrichtung
DE102020214045A1 (de) Halbbrücke für einen elektrischen Antrieb eines Elektrofahrzeugs oder eines Hybridfahrzeugs, Leistungsmodul für einen Inverter und Inverter
DE112021006152B4 (de) Halbleiterausrüstung
DE112022000855T5 (de) Halbleiterbauteil
DE112022006100T5 (de) Halbleitervorrichtung
DE112021004935T5 (de) Halbleiterbauteil
DE102022213011A1 (de) Leistungsmodul für einen Wandler mit verbesserter Feldabschirmung von Signalpins
DE112022000727T5 (de) Halbleiterbauteil
DE112020007295T5 (de) Leistungshalbleitervorrichtung und verfahren zum herstellen derselben, sowie stromrichtervorrichtung
DE112022001273T5 (de) Halbleiterbauteil
DE112022005155T5 (de) Halbleiterbauteil
DE112022004701T5 (de) Halbleitervorrichtung
DE112021002829T5 (de) Halbleiterbauteil und Verfahren zum Herstellen eines Halbleiterbauteils
DE112021006144T5 (de) Halbleiterbauteil
DE102017209904A1 (de) Elektronisches Bauelement, Leadframe für ein elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements und eines Leadframes

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0025160000

Ipc: H10W0090000000