DE112021004682T5 - Signalübertragungsvorrichtung, elektronische vorrichtung und fahrzeug - Google Patents
Signalübertragungsvorrichtung, elektronische vorrichtung und fahrzeug Download PDFInfo
- Publication number
- DE112021004682T5 DE112021004682T5 DE112021004682.9T DE112021004682T DE112021004682T5 DE 112021004682 T5 DE112021004682 T5 DE 112021004682T5 DE 112021004682 T DE112021004682 T DE 112021004682T DE 112021004682 T5 DE112021004682 T5 DE 112021004682T5
- Authority
- DE
- Germany
- Prior art keywords
- voltage
- signal
- pulse
- low
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008054 signal transmission Effects 0.000 title claims abstract description 103
- 239000003990 capacitor Substances 0.000 claims abstract description 86
- 238000007599 discharging Methods 0.000 claims abstract description 5
- 239000004020 conductor Substances 0.000 claims description 141
- 238000012544 monitoring process Methods 0.000 claims description 84
- 238000002955 isolation Methods 0.000 claims description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 218
- 239000004065 semiconductor Substances 0.000 description 93
- 238000007789 sealing Methods 0.000 description 50
- 239000011229 interlayer Substances 0.000 description 31
- 230000005540 biological transmission Effects 0.000 description 30
- 238000004804 winding Methods 0.000 description 26
- 239000000872 buffer Substances 0.000 description 21
- 230000006870 function Effects 0.000 description 14
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 10
- 238000007667 floating Methods 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 230000004044 response Effects 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 230000006872 improvement Effects 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 101100489713 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND1 gene Proteins 0.000 description 6
- 101100489717 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND2 gene Proteins 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 230000002238 attenuated effect Effects 0.000 description 4
- 238000009529 body temperature measurement Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 101001042415 Cratylia mollis Mannose/glucose-specific lectin Cramoll Proteins 0.000 description 3
- 102100029775 Eukaryotic translation initiation factor 1 Human genes 0.000 description 3
- 101001012787 Homo sapiens Eukaryotic translation initiation factor 1 Proteins 0.000 description 3
- 101000643378 Homo sapiens Serine racemase Proteins 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- AIXMJTYHQHQJLU-UHFFFAOYSA-N chembl210858 Chemical compound O1C(CC(=O)OC)CC(C=2C=CC(O)=CC=2)=N1 AIXMJTYHQHQJLU-UHFFFAOYSA-N 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000011835 investigation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 241000156302 Porcine hemagglutinating encephalomyelitis virus Species 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 206010012289 Dementia Diseases 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002577 polybenzoxazole Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
- H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
- H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
- H03K4/48—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
- H03K4/50—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth voltage is produced across a capacitor
- H03K4/501—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth voltage is produced across a capacitor the starting point of the flyback period being determined by the amplitude of the voltage across the capacitor, e.g. by a comparator
- H03K4/502—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth voltage is produced across a capacitor the starting point of the flyback period being determined by the amplitude of the voltage across the capacitor, e.g. by a comparator the capacitor being charged from a constant-current source
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L25/00—Baseband systems
- H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
- H04L25/0264—Arrangements for coupling to transmission lines
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020-180323 | 2020-10-28 | ||
| JP2020180323 | 2020-10-28 | ||
| PCT/JP2021/038884 WO2022091922A1 (ja) | 2020-10-28 | 2021-10-21 | 信号伝達装置、電子機器、車両 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112021004682T5 true DE112021004682T5 (de) | 2023-07-20 |
Family
ID=81382370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112021004682.9T Pending DE112021004682T5 (de) | 2020-10-28 | 2021-10-21 | Signalübertragungsvorrichtung, elektronische vorrichtung und fahrzeug |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12143100B2 (https=) |
| JP (1) | JPWO2022091922A1 (https=) |
| CN (1) | CN116325508A (https=) |
| DE (1) | DE112021004682T5 (https=) |
| WO (1) | WO2022091922A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112021003946B4 (de) * | 2020-09-24 | 2024-08-08 | Rohm Co., Ltd. | Signalübertragungsvorrichtung, elektronische Vorrichtung und Fahrzeug |
| WO2023248622A1 (ja) * | 2022-06-24 | 2023-12-28 | ローム株式会社 | 受信回路、信号伝達装置 |
| JP2024006287A (ja) * | 2022-07-01 | 2024-01-17 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018011108A (ja) | 2016-07-11 | 2018-01-18 | 三菱電機株式会社 | 信号伝達装置、および、電力スイッチング素子駆動装置 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4918454A (en) * | 1988-10-13 | 1990-04-17 | Crystal Semiconductor Corporation | Compensated capacitors for switched capacitor input of an analog-to-digital converter |
| US6069050A (en) | 1997-10-20 | 2000-05-30 | Taiwan Semiconductor Manufacturing Company | Cross-coupled capacitors for improved voltage coefficient |
| JP3586638B2 (ja) * | 2000-11-13 | 2004-11-10 | シャープ株式会社 | 半導体容量装置 |
| EP1351389A1 (en) | 2002-04-02 | 2003-10-08 | Dialog Semiconductor GmbH | Method and circuit for compensating mosfet capacitance variations in integrated circuits |
| KR100480603B1 (ko) | 2002-07-19 | 2005-04-06 | 삼성전자주식회사 | 일정한 커패시턴스를 갖는 금속-절연체-금속 커패시터를 포함하는 반도체 소자 |
| JP2006319446A (ja) * | 2005-05-10 | 2006-11-24 | Toyota Industries Corp | 分周回路 |
| JP4528841B2 (ja) * | 2008-03-12 | 2010-08-25 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
| JP2010199490A (ja) * | 2009-02-27 | 2010-09-09 | Fuji Electric Systems Co Ltd | パワー半導体装置の温度測定装置およびこれを使用したパワー半導体モジュール |
| JP5375952B2 (ja) * | 2009-03-31 | 2013-12-25 | 日本電気株式会社 | 半導体装置 |
| WO2011036428A1 (en) | 2009-09-23 | 2011-03-31 | X-Fab Semiconductor Foundries Ag | Ultra-low voltage coefficient capacitors |
| CN102783005A (zh) * | 2009-12-28 | 2012-11-14 | 汤姆森特许公司 | 同步整流器禁用装置 |
| JP6104512B2 (ja) | 2011-04-01 | 2017-03-29 | ローム株式会社 | 温度検出装置 |
| WO2012177873A2 (en) | 2011-06-22 | 2012-12-27 | Arkansas Power Electronics International, Inc. | High temperature half bridge gate driver |
| JP5714455B2 (ja) | 2011-08-31 | 2015-05-07 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
| JP5823235B2 (ja) * | 2011-09-30 | 2015-11-25 | 新電元工業株式会社 | スイッチング電源装置 |
| JP5977950B2 (ja) * | 2012-01-19 | 2016-08-24 | ローム株式会社 | Ｄｃ／ｄｃコンバータおよびその制御回路、それを用いた電源装置、電源アダプタおよび電子機器 |
| US20170317529A1 (en) * | 2012-05-21 | 2017-11-02 | University Of Washington | Distributed control adaptive wireless power transfer system |
| JP5964183B2 (ja) | 2012-09-05 | 2016-08-03 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2018082325A (ja) * | 2016-11-17 | 2018-05-24 | 株式会社ノーリツ | 三角波生成回路、並びに、ファンモータ電流検出装置 |
| US11811396B2 (en) * | 2021-09-30 | 2023-11-07 | Infineon Technologies Austria Ag | Power transfer, gate drive, and/or protection functions across an isolation barrier |
-
2021
- 2021-10-21 JP JP2022559064A patent/JPWO2022091922A1/ja active Pending
- 2021-10-21 CN CN202180069550.7A patent/CN116325508A/zh active Pending
- 2021-10-21 US US18/250,035 patent/US12143100B2/en active Active
- 2021-10-21 DE DE112021004682.9T patent/DE112021004682T5/de active Pending
- 2021-10-21 WO PCT/JP2021/038884 patent/WO2022091922A1/ja not_active Ceased
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018011108A (ja) | 2016-07-11 | 2018-01-18 | 三菱電機株式会社 | 信号伝達装置、および、電力スイッチング素子駆動装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US12143100B2 (en) | 2024-11-12 |
| US20240007100A1 (en) | 2024-01-04 |
| CN116325508A (zh) | 2023-06-23 |
| WO2022091922A1 (ja) | 2022-05-05 |
| JPWO2022091922A1 (https=) | 2022-05-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE112021004099T5 (de) | Signalübertragungsvorrichtung, elektronische vorrichtung und fahrzeug | |
| DE112022000664T5 (de) | Isolierter gate-treiber, traktionswechselrichter und elektrofahrzeug | |
| DE112021004682T5 (de) | Signalübertragungsvorrichtung, elektronische vorrichtung und fahrzeug | |
| DE112022000692T5 (de) | Isolierter gate-treiber, traktionswechselrichter und elektrofahrzeug | |
| DE112019006364T5 (de) | Halbleiterbauelement | |
| DE19963656A1 (de) | Fahrzeugleistungsumrichter | |
| DE112021004413B4 (de) | Halbleitervorrichtung, Halbleitermodul, Motoransteuerungsvorrichtung und Fahrzeug | |
| DE112019000870T5 (de) | Schalteransteuereinrichtung | |
| DE102005043907B4 (de) | Halbleiterschaltungen und Übertragungsvorrichtungen zur fehlersicheren Kommunikation in Kraftfahrzeugen | |
| DE112021003377T5 (de) | Signalübertragungseinrichtung, elektronische vorrichtung und fahrzeug | |
| DE102013205706A1 (de) | Leistungselektronische schaltung und system mit derselben | |
| DE112022000354T5 (de) | Transformator-chip und signalübertragungsvorrichtung | |
| US20250219875A1 (en) | Signal transmission device, electronic device, and vehicle | |
| US20240204772A1 (en) | Gate driver | |
| DE112021002919T5 (de) | Signalübertragungsvorrichtung, elektronisches gerät und fahrzeug | |
| DE112021006324T5 (de) | Halbleiterbauteil | |
| US20250308770A1 (en) | Signal transmission device, electronic device and vehicle | |
| DE112022000785T5 (de) | Schaltvorrichtung, elektronisches gerät und fahrzeug | |
| DE102017119527B4 (de) | Fahrzeugeigenes Gerät aufweisend eine elektrische Antriebsschaltung zur Unterdrückung einer Störungsausstrahlung | |
| DE102019103730B4 (de) | Schaltungsanordnung mit galvanischer isolation zwischen elektronischen schaltungen | |
| DE112021001203T5 (de) | Pulsempfangsschaltung und Signalübertragungsvorrichtung | |
| US20260066899A1 (en) | Signal transmission device, electronic device, and vehicle | |
| US20260039301A1 (en) | Driving device, electronic device, and vehicle | |
| US20260081602A1 (en) | Power supply circuit, signal transmission device, electronic device, and vehicle | |
| US20240405772A1 (en) | Pulse transmission circuit, signal transmission device, electronic device, and vehicle |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed | ||
| R016 | Response to examination communication |