DE112019002362A5 - Optoelektronisches halbleiterbauelement mit einer ersten und einer zweiten stromverteilungsstruktur - Google Patents

Optoelektronisches halbleiterbauelement mit einer ersten und einer zweiten stromverteilungsstruktur Download PDF

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Publication number
DE112019002362A5
DE112019002362A5 DE112019002362.4T DE112019002362T DE112019002362A5 DE 112019002362 A5 DE112019002362 A5 DE 112019002362A5 DE 112019002362 T DE112019002362 T DE 112019002362T DE 112019002362 A5 DE112019002362 A5 DE 112019002362A5
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Germany
Prior art keywords
power distribution
semiconductor component
optoelectronic semiconductor
distribution structure
optoelectronic
Prior art date
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Granted
Application number
DE112019002362.4T
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English (en)
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DE112019002362B4 (de
Inventor
Michael Völkl
Siegfried Herrmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osram Oled GmbH
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Osram Oled GmbH
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Filing date
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Publication of DE112019002362A5 publication Critical patent/DE112019002362A5/de
Application granted granted Critical
Publication of DE112019002362B4 publication Critical patent/DE112019002362B4/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
DE112019002362.4T 2018-05-09 2019-05-08 Optoelektronisches Halbleiterbauelement mit einer ersten und einer zweiten Stromverteilungsstruktur Active DE112019002362B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102018111168.1 2018-05-09
DE102018111168.1A DE102018111168A1 (de) 2018-05-09 2018-05-09 Optoelektronisches halbleiterbauelement mit einer ersten und einer zweiten stromverteilungsstruktur
PCT/EP2019/061792 WO2019215212A1 (de) 2018-05-09 2019-05-08 Optoelektronisches halbleiterbauelement mit einer ersten und einer zweiten stromverteilungsstruktur

Publications (2)

Publication Number Publication Date
DE112019002362A5 true DE112019002362A5 (de) 2021-03-11
DE112019002362B4 DE112019002362B4 (de) 2024-05-16

Family

ID=66554343

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102018111168.1A Withdrawn DE102018111168A1 (de) 2018-05-09 2018-05-09 Optoelektronisches halbleiterbauelement mit einer ersten und einer zweiten stromverteilungsstruktur
DE112019002362.4T Active DE112019002362B4 (de) 2018-05-09 2019-05-08 Optoelektronisches Halbleiterbauelement mit einer ersten und einer zweiten Stromverteilungsstruktur

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102018111168.1A Withdrawn DE102018111168A1 (de) 2018-05-09 2018-05-09 Optoelektronisches halbleiterbauelement mit einer ersten und einer zweiten stromverteilungsstruktur

Country Status (3)

Country Link
US (1) US11715815B2 (de)
DE (2) DE102018111168A1 (de)
WO (1) WO2019215212A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021124146A1 (de) 2021-09-17 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Licht emittierender halbleiterchip und verfahren zur herstellung eines licht emittierenden halbleiterchips

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10066164B2 (en) * 2009-06-30 2018-09-04 Tiecheng Qiao Semiconductor nanocrystals used with LED sources
CN103222074B (zh) * 2010-11-18 2016-06-01 首尔伟傲世有限公司 具有电极焊盘的发光二极管芯片
KR101230622B1 (ko) * 2010-12-10 2013-02-06 이정훈 집단 본딩을 이용한 반도체 디바이스 제조 방법 및 그것에 의해 제조된 반도체 디바이스
KR101769075B1 (ko) * 2010-12-24 2017-08-18 서울바이오시스 주식회사 발광 다이오드 칩 및 그것을 제조하는 방법
US8592847B2 (en) * 2011-04-15 2013-11-26 Epistar Corporation Light-emitting device
US20150179873A1 (en) * 2013-12-20 2015-06-25 Palo Alto Research Center Incorporated Small-sized light-emitting diode chiplets and method of fabrication thereof
DE102015117198A1 (de) * 2015-10-08 2017-04-13 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102016106831A1 (de) * 2016-04-13 2017-10-19 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102016119539A1 (de) * 2016-10-13 2018-04-19 Osram Opto Semiconductors Gmbh Licht emittierender Halbleiterchip und Licht emittierende Vorrichtung

Also Published As

Publication number Publication date
WO2019215212A1 (de) 2019-11-14
US11715815B2 (en) 2023-08-01
DE112019002362B4 (de) 2024-05-16
US20210242367A1 (en) 2021-08-05
DE102018111168A1 (de) 2019-11-14

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