Connect public, paid and private patent data with Google Patents Public Datasets

Halbleiteranordnung und Verfahren zur Herstellung der Halbleiteranordnung

Info

Publication number
DE10216633B8
DE10216633B8 DE2002116633 DE10216633A DE10216633B8 DE 10216633 B8 DE10216633 B8 DE 10216633B8 DE 2002116633 DE2002116633 DE 2002116633 DE 10216633 A DE10216633 A DE 10216633A DE 10216633 B8 DE10216633 B8 DE 10216633B8
Authority
DE
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE2002116633
Other languages
English (en)
Other versions
DE10216633A1 (de )
DE10216633B4 (de )
Inventor
Jun Sakakibara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/781Inverted VDMOS transistors, i.e. Source-Down VDMOS transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831Field effect transistors with field effect produced by an insulated gate with multiple gate structure
DE2002116633 2001-04-18 2002-04-15 Halbleiteranordnung und Verfahren zur Herstellung der Halbleiteranordnung Expired - Fee Related DE10216633B8 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP01-120163 2001-04-18
JP2001120163A JP3534084B2 (ja) 2001-04-18 2001-04-18 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
DE10216633A1 true DE10216633A1 (de) 2002-10-24
DE10216633B4 DE10216633B4 (de) 2011-06-22
DE10216633B8 true DE10216633B8 (de) 2012-02-02

Family

ID=18970255

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2002116633 Expired - Fee Related DE10216633B8 (de) 2001-04-18 2002-04-15 Halbleiteranordnung und Verfahren zur Herstellung der Halbleiteranordnung

Country Status (3)

Country Link
US (2) US6670673B2 (de)
JP (1) JP3534084B2 (de)
DE (1) DE10216633B8 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7638841B2 (en) * 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP2004047967A (ja) * 2002-05-22 2004-02-12 Denso Corp 半導体装置及びその製造方法
US6790713B1 (en) * 2002-09-09 2004-09-14 T-Ram, Inc. Method for making an inlayed thyristor-based device
US7259411B1 (en) 2003-12-04 2007-08-21 National Semiconductor Corporation Vertical MOS transistor
US7348641B2 (en) * 2004-08-31 2008-03-25 International Business Machines Corporation Structure and method of making double-gated self-aligned finFET having gates of different lengths
DE102004045966B4 (de) * 2004-09-22 2006-08-31 Infineon Technologies Austria Ag Vertikal-Feldeffekttransistor in Source-Down-Struktur
DE102004052153B4 (de) * 2004-10-26 2016-02-04 Infineon Technologies Ag Vertikales Leistungshalbleiterbauelement mit Gateanschluss auf der Rückseite und Verfahren zu dessen Herstellung
US9685524B2 (en) 2005-03-11 2017-06-20 Vishay-Siliconix Narrow semiconductor trench structure
JP4830360B2 (ja) * 2005-06-17 2011-12-07 株式会社デンソー 半導体装置およびその製造方法
CN101336483B (zh) 2005-12-22 2014-08-20 维西埃-硅化物公司 高迁移率功率金属氧化物半导体场效应晶体管
US8409954B2 (en) * 2006-03-21 2013-04-02 Vishay-Silconix Ultra-low drain-source resistance power MOSFET
EP2140495B1 (de) * 2007-03-19 2017-11-08 Nxp B.V. Feldeffekttransistor mit ausgedehntem drain und versenktem gate und verfahren zu dessen herstellung
JP2009081397A (ja) * 2007-09-27 2009-04-16 Fuji Electric Device Technology Co Ltd 半導体装置および半導体装置の製造方法
JP5563760B2 (ja) * 2008-12-19 2014-07-30 ローム株式会社 半導体装置
US8004051B2 (en) * 2009-02-06 2011-08-23 Texas Instruments Incorporated Lateral trench MOSFET having a field plate
CN101840935B (zh) * 2010-05-17 2012-02-29 电子科技大学 Soi横向mosfet器件
US8319290B2 (en) 2010-06-18 2012-11-27 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
CN102376764A (zh) * 2010-08-18 2012-03-14 株式会社东芝 半导体装置及其制造方法
JP2012059931A (ja) * 2010-09-09 2012-03-22 Toshiba Corp 半導体装置
US20120068222A1 (en) * 2010-09-21 2012-03-22 Kabushiki Kaisha Toshiba Semiconductor Device and Method for Manufacturing the Same
US8580650B2 (en) * 2010-10-28 2013-11-12 Texas Instruments Incorporated Lateral superjunction extended drain MOS transistor
US8569842B2 (en) 2011-01-07 2013-10-29 Infineon Technologies Austria Ag Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices
US8455948B2 (en) 2011-01-07 2013-06-04 Infineon Technologies Austria Ag Transistor arrangement with a first transistor and with a plurality of second transistors
JP2012204563A (ja) * 2011-03-25 2012-10-22 Toshiba Corp 半導体素子及び半導体素子の製造方法
US8866253B2 (en) 2012-01-31 2014-10-21 Infineon Technologies Dresden Gmbh Semiconductor arrangement with active drift zone
KR101766561B1 (ko) * 2012-12-03 2017-08-08 인피니언 테크놀로지스 아게 반도체 디바이스, 집적 회로 및 반도체 디바이스 제조 방법
US9799762B2 (en) 2012-12-03 2017-10-24 Infineon Technologies Ag Semiconductor device and method of manufacturing a semiconductor device
US9306058B2 (en) 2013-10-02 2016-04-05 Infineon Technologies Ag Integrated circuit and method of manufacturing an integrated circuit
US9287404B2 (en) 2013-10-02 2016-03-15 Infineon Technologies Austria Ag Semiconductor device and method of manufacturing a semiconductor device with lateral FET cells and field plates
US9401399B2 (en) * 2013-10-15 2016-07-26 Infineon Technologies Ag Semiconductor device
US9735243B2 (en) 2013-11-18 2017-08-15 Infineon Technologies Ag Semiconductor device, integrated circuit and method of forming a semiconductor device
US9419130B2 (en) 2013-11-27 2016-08-16 Infineon Technologies Austria Ag Semiconductor device and integrated circuit
US9400513B2 (en) 2014-06-30 2016-07-26 Infineon Technologies Austria Ag Cascode circuit
DE102016107714A1 (de) * 2015-08-14 2017-02-16 Infineon Technologies Dresden Gmbh Halbleitervorrichtung mit einer Transistorzelle, die einen Sourcekontakt in einem Graben umfasst, Verfahren zum Herstellen der Halbleitervorrichtung und integrierte Schaltung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4796070A (en) * 1987-01-15 1989-01-03 General Electric Company Lateral charge control semiconductor device and method of fabrication
US4910564A (en) * 1987-07-01 1990-03-20 Mitsubishi Denki Kabushiki Kaisha Highly integrated field effect transistor and method for manufacturing the same
US5828101A (en) * 1995-03-30 1998-10-27 Kabushiki Kaisha Toshiba Three-terminal semiconductor device and related semiconductor devices
US6118149A (en) * 1997-03-17 2000-09-12 Kabushiki Kaisha Toshiba Trench gate MOSFET

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH051625B2 (de) 1984-11-22 1993-01-08 Kogyo Gijutsuin
JPS6366963A (en) 1986-09-08 1988-03-25 Nippon Telegr & Teleph Corp <Ntt> Groove-buried semiconductor device and manufacture thereof
JP2510599B2 (ja) 1987-07-01 1996-06-26 三菱電機株式会社 電界効果トランジスタ
JPH03283669A (en) 1990-03-30 1991-12-13 Nec Corp Field-effect transistor
JP2894820B2 (ja) 1990-10-25 1999-05-24 株式会社東芝 半導体装置
CN1019720B (zh) 1991-03-19 1992-12-30 电子科技大学 半导体功率器件
JPH0582782A (ja) 1991-09-20 1993-04-02 Nippon Telegr & Teleph Corp <Ntt> Mosfet
US5640034A (en) * 1992-05-18 1997-06-17 Texas Instruments Incorporated Top-drain trench based resurf DMOS transistor structure
DE4309764C2 (de) 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
JP3329973B2 (ja) 1995-01-26 2002-09-30 松下電工株式会社 半導体装置およびその製造方法
JP3395559B2 (ja) 1997-01-28 2003-04-14 株式会社豊田中央研究所 半導体装置
US6281547B1 (en) 1997-05-08 2001-08-28 Megamos Corporation Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source mask
JP3405681B2 (ja) 1997-07-31 2003-05-12 株式会社東芝 半導体装置
JPH11150265A (ja) 1997-11-17 1999-06-02 Toshiba Corp 半導体装置
JP3356162B2 (ja) * 1999-10-19 2002-12-09 株式会社デンソー 半導体装置及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4796070A (en) * 1987-01-15 1989-01-03 General Electric Company Lateral charge control semiconductor device and method of fabrication
US4910564A (en) * 1987-07-01 1990-03-20 Mitsubishi Denki Kabushiki Kaisha Highly integrated field effect transistor and method for manufacturing the same
US5828101A (en) * 1995-03-30 1998-10-27 Kabushiki Kaisha Toshiba Three-terminal semiconductor device and related semiconductor devices
US6118149A (en) * 1997-03-17 2000-09-12 Kabushiki Kaisha Toshiba Trench gate MOSFET

Also Published As

Publication number Publication date Type
DE10216633A1 (de) 2002-10-24 application
US6867456B2 (en) 2005-03-15 grant
US20040089896A1 (en) 2004-05-13 application
JP3534084B2 (ja) 2004-06-07 grant
JP2002314080A (ja) 2002-10-25 application
US6670673B2 (en) 2003-12-30 grant
DE10216633B4 (de) 2011-06-22 grant
US20020155685A1 (en) 2002-10-24 application

Similar Documents

Publication Publication Date Title
RU2004105598A (ru) Система и способ маскирования ошибок видеосигнала
DE60215045D1 (de) Dreischichtige strahl-mems-einrichtung und diesbezügliche verfahren
DE69901178T2 (de) Nichtgesinterte elektrode und verfahren zur herstellung
RU2001126630A (ru) Способ изготовления самомасштабируемого полевого транзистора со структурой суперсамосовмещенного биполярного транзистора
DE60221254D1 (de) Ventilsystem und verfahren
DE19983016T1 (de) Airbag-Abdeckung und Verfahren zur Herstellung derselben
DE60008271D1 (de) Lichtstabile hopfenfraktion und verfahren zur herstellung derselben
DE60225600D1 (de) Retroreflektierender gegenstand und verfahren
DE60005668D1 (de) Trägerstruktur und verfahren zur herstellung
DE60325383D1 (de) Antipyretikum und herstellungsverfahren dafür
DE60224663D1 (de) Verwendung einer miniaturvorrichtung zur trennung und isolierung biologischer objekte und trennungsverfahren
DE60140784D1 (de) Organische elektrolumineszente vorrichtung und verfahren zu dessen herstellung
RU2003111951A (ru) Способ изготовления и пресс-форма для изготовления формованного изделия
DE60216196D1 (de) Kosmetischer Artikel und dessen Herstellungsverfahren
DE50100014D1 (de) Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe
DE60220096D1 (de) Polyketon und verfahren zu seiner herstellung
RU2001126362A (ru) Способ изготовления щеточного уплотнения и устройство для его осуществления
DE60209524D1 (de) Eingekapseltes isolierungsprodukt und dessen herstellungsverfahren
DE60236870D1 (de) Verfahren zur herstellung selektiv substituierter corrole und neue substituierte corrole
DE60132413D1 (de) Wasserumlöslichen Verbindung enthaltendes Polierkissen und Verfahren zur Herstellung desselben
DE502004007893D1 (de) Verfahren zur herstellung von wicklungen und wicklungsverschaltungen
RU2003115633A (ru) Способ изготовления воздуховода и воздуховод
RU2003115356A (ru) Способ изготовления воздуховода и воздуховод
DE50203160D1 (de) Verbundbauteil und verfahren zu dessen herstellung
DE60210802D1 (de) Rezeptausführungssystem und verfahren

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
R018 Grant decision by examination section/examining division
R020 Patent grant now final

Effective date: 20110923

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20131101