DE102018208644A1 - Projection exposure apparatus with a measuring device for monitoring a lateral imaging stability - Google Patents

Projection exposure apparatus with a measuring device for monitoring a lateral imaging stability

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Publication number
DE102018208644A1
DE102018208644A1 DE102018208644.3A DE102018208644A DE102018208644A1 DE 102018208644 A1 DE102018208644 A1 DE 102018208644A1 DE 102018208644 A DE102018208644 A DE 102018208644A DE 102018208644 A1 DE102018208644 A1 DE 102018208644A1
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DE
Germany
Prior art keywords
measuring
projection exposure
substrate
mask
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102018208644.3A
Other languages
German (de)
Inventor
Sascha Bleidistel
Jochen Hetzler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to DE102018208644.3A priority Critical patent/DE102018208644A1/en
Publication of DE102018208644A1 publication Critical patent/DE102018208644A1/en
Ceased legal-status Critical Current

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01MTESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02Testing optical properties
    • G01M11/0242Testing optical properties by measuring geometrical properties or aberrations
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70258Projection system adjustment, alignment during assembly of projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
    • G03F7/70591Testing optical components
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Abstract

A microlithography projection exposure apparatus (10) comprises a mask (12) which comprises a die area (18) with product structures (16) and a scribe frame area (22) arranged outside the die area, a projection objective (30) for imaging the A mask on a substrate (34) during an exposure process, and a measuring device (42) for monitoring a lateral imaging stability of the projection exposure apparatus during the exposure process. The measuring device (42) comprises a measuring radiation generating device (44) which is configured to irradiate a measuring structure (20) arranged on the mask with measuring radiation (50) such that the measuring radiation passes through the entire projection objective after interacting with the measuring structure the substrate arranged reflective structure (38) is reflected back and hits again after passing through the entire projection lens on the measuring structure. The measuring structure (20) is arranged in the scribe frame area (22) of the mask.

Description

  • Background of the invention
  • The invention relates to a projection exposure apparatus for microlithography with a measuring device for monitoring a lateral imaging stability of the projection exposure apparatus and to a method for monitoring a lateral imaging stability of a projection exposure apparatus.
  • In conventional projection exposure systems, the quality of the image often suffers from smearing. If the image layer drifts during the exposure of a field on the wafer, the latent image in the photoresist is smeared. This affects overlay errors or so-called "overlay" errors in the printed structures. These smearing problems occur to a great extent in EUV projection exposure equipment. EUV projection exposure systems expose structures with light of a wavelength in the extreme ultraviolet wavelength range, eg. B. at a wavelength of 13.5 nm. As optical components here are only mirrors in question. In the case of mirror optics, a change in the mirror position and / or the mirror tilt position results in a first approximation in a shift of the image. The requirements for the mechanical stability of the optical components are significantly increased compared to refractive systems.
  • In conventional projection exposure systems, the field position is checked several times in the course of the exposure of a wafer with suitable alignment or so-called "alignment" sensors and appropriate corrective measures are initiated. For this purpose, the actual exposure process of the photoresist is interrupted. Between the control measurements one trusts in the short-term stability of the projection system. Conventional systems have relatively high short-term stability compared to EUV systems. A major contributor to the stability of mirror positions is the thermal expansion of the lens' mechanical structure. In order to achieve the required high demands on image stability, the conventional approach is to use materials with extremely low coefficients of thermal expansion for the structure of the projection objective. However, such materials are extremely expensive, delicate and difficult to work with.
  • In US2011 / 0157571A1 A method for determining a lateral imaging stability of a microlithographic projection exposure apparatus is described in which a diffraction grating is arranged both in the mask plane and in the wafer plane. Measuring radiation is evaluated by passing through the diffraction grating and the interposed projection lens by means of detectors.
  • Underlying task
  • It is an object of the invention to solve the aforementioned problems, and more particularly, to provide a projection exposure apparatus and a method which substantially prevents smearing of the latent image in the photoresist during the exposure operation of the projection exposure apparatus while at the same time not substantially restricting the productivity of the apparatus.
  • Inventive solution
  • The aforementioned object can be achieved, for example, with a projection exposure apparatus for microlithography, which comprises: a mask comprising a die region with product structures and a scribe frame region arranged outside the die region, a projection objective for imaging the mask onto a substrate during a microlithography Exposure process, as well as a measuring device for monitoring a lateral imaging stability of the projection exposure apparatus, in particular of the projection lens, during the exposure process. In this case, the measuring device comprises a measuring radiation generating device which is configured to irradiate a measuring structure arranged on the mask with measuring radiation in such a way that the measuring radiation, after interacting with the measuring structure, passes through the entire projection objective, is reflected back on a reflective structure arranged on the substrate and after repeated passage the entire projection lens meets the measurement structure again. The measuring structure is arranged in the scribe frame area of the mask.
  • A scratch frame area of the mask is to be understood as a region which is provided for structures to be imaged on the scribe frame of the substrate. The scribe frame is often referred to as a saw frame ("scribe line") or saw path. The scratch frame is to be understood as that region of a substrate which, after the completion of the production of semiconductor chips on a substrate, for example in the form of a wafer, is used for the damage-free singulation of the semiconductor chips. That is, the entire slices are separated into individual semiconductor chips along the scribe frame by a cutting process such as sawing or laser-based cracking.
  • Under a Die is in semiconductor and microchip technology the designation of a single, ungehäusten piece of a semiconductor wafer understood. Such die is usually obtained by sawing or breaking the finished wafer into rectangular pieces. In general, located on a Die one or more components, eg. As transistors or LEDs, and / or one or more complex assemblies, eg. B. integrated circuits. The die region of the mask is understood to be that region of the mask which contains product structures serving for the production of the named components or the complex assembly. In particular, the Ritzrahmenbereich surrounds the die area at least partially.
  • The arrangement of the measurement structure in the scribe frame region of the mask makes it possible to carry out the measurement of the lateral imaging stability during the exposure operation of the projection exposure apparatus without having to accept losses in the imaging surface which can be used for the product structures on the mask.
  • According to one embodiment, the reflective structure is configured to reflect the incident measurement radiation back on itself. The reflective structure may also be referred to as a retroreflective structure, in particular, it may be configured as a Littrow grating.
  • According to a further embodiment, the projection exposure apparatus further comprises the substrate, wherein the substrate comprises a scoring frame serving for the singulation of semiconductor chips to be produced on the substrate, and wherein the reflective structure is arranged in the scribe frame of the substrate. As already mentioned above, the scribe frame is used to singulate semiconductor chips to be produced on the substrate.
  • According to a further embodiment, the projection exposure apparatus further comprises a detection device for detecting an intensity distribution of the measurement radiation after its repeated impact on the measurement structure. In particular, the detection device is configured to record a two-dimensional intensity distribution of the measurement radiation, for example in the form of an interference pattern or a moire superimposition pattern.
  • According to a further embodiment, the measuring device comprises an evaluation device for determining the lateral imaging stability of the projection exposure apparatus from the intensity distribution of the measurement radiation detected by the detection device.
  • According to a further embodiment, the measurement structure is configured as a diffraction structure, according to an alternative embodiment it may be configured as a moiré structure.
  • According to a further embodiment, the projection exposure apparatus is configured for operation in the EUV wavelength range. Thus, the projection exposure apparatus is configured to image the product structures onto the substrate during the exposure process by means of EUV radiation.
  • The above object can be further solved, for example, with the following method for monitoring a lateral imaging stability of a projection exposure apparatus for microlithography. This method comprises providing a mask having a die region having product structures and a scribe frame region arranged outside the die region, wherein a measurement structure is arranged in the scribe frame region. Furthermore, the method comprises illuminating the measurement structure with measurement radiation during an exposure process, in which the mask is imaged onto a substrate by means of a projection objective of the projection exposure apparatus, the measurement radiation, after interacting with the measurement structure, passing through the entire projection objective, on a reflective structure arranged on the substrate is reflected back and after re-running through the entire projection lens again hits the measuring structure.
  • According to one embodiment, an intensity distribution of the measurement radiation is recorded after the second time the measurement radiation hits the measurement structure, and the lateral imaging stability of the projection exposure system is determined from the recorded intensity distribution.
  • The features specified with respect to the above-mentioned embodiments, exemplary embodiments or design variants, etc. of the projection exposure apparatus according to the invention can be correspondingly transferred to the method according to the invention. These and other features of the embodiments according to the invention are explained in the description of the figures and the claims. The individual features can be realized either separately or in combination as embodiments of the invention. Furthermore, they can describe advantageous embodiments which are independently protectable and their protection is possibly claimed only during or after pending the application.
  • list of figures
  • The foregoing and other advantageous features of the invention will become more apparent in the detailed description which follows Embodiments of the invention illustrated with reference to the accompanying schematic drawings. It shows:
    • 1 a projection exposure apparatus with a measuring device for monitoring a lateral imaging stability of the projection exposure apparatus,
    • 2 an embodiment of a mask used in the monitoring of imaging stability, as well
    • 3 an embodiment of a substrate used in monitoring imaging stability.
  • Detailed description of inventive embodiments
  • In the embodiments or embodiments or design variants described below, functionally or structurally similar elements are as far as possible provided with the same or similar reference numerals. Therefore, for the understanding of the features of the individual elements of a particular embodiment, reference should be made to the description of other embodiments or the general description of the invention.
  • To facilitate the description is in the drawing a Cartesian xyz Coordinate system indicated, from which the respective positional relationship of the components shown in the figures results. In 1 the y-direction is perpendicular to the plane in this, the x Direction to the right and the z direction to the top.
  • 1 illustrates a first embodiment of a projection exposure apparatus according to the invention 10 in the form of a so-called "scanner" running EUV projection exposure system. The projection exposure machine 10 includes a mask table 14 which is also called a "reticle stage" and for holding a reflective mask 12 , also called reticle, serves. The mask 12 has product structures on its reflective bottom surface 16 for imaging onto a substrate 34 in the form of a photoresist-coated wafer. The product structures 16 are in a so-called die area 18 the mask 12 arranged.
  • How out 2 As you can see, the die area 18 a rectangular area on the mask 12 , It contains those structures that are in the mask of the present 12 generated lithography level to form a This serve. A die is understood to mean a single, unhoused piece of a semiconductor wafer. Such a die is usually obtained by sawing or breaking the wafer finished into a rectangular shape after the deposition of a plurality of lithography planes and respective further process steps. As a rule, one or more components, eg transistors or light-emitting diodes and / or one or more complex assemblies, such as integrated circuits, are located on a die.
  • 3 shows an example of a die area 36 on the substrate 34 , The substrate 34 includes a grid-shaped scoring frame 40 , where the die area 36 in a grid opening of the scribe frame 40 is arranged. That is, the scribe frame encloses the illustrated die area 36 , In the other grid openings further, not shown die areas may be arranged. The scratching frame 40 is often referred to as sawing frame, Sägepfad or the English term "scribe line". The scribe frame is the area of the substrate 34 After completion of all process steps for the production of semiconductor chips, ie after the production of several lithographic exposures in different planes and subsequent further process steps, such as the application of materials and performing etching processes, on the substrate 34 is used for damage-free separation of the semiconductor chips. That is, the entire slices are cut along the scribe frame by a cutting process such as sawing or laser-based generation of cracks 40 decomposed into individual semiconductor chips. The semiconductor chips may include one or more dies. The in 3 illustrated die area 36 Thus, after performing the aforementioned manufacturing process steps, it may comprise one or more dies after sawing the substrate 34 along the scribe frame 40 form the basis of a semiconductor chip.
  • The projection exposure machine 10 includes an exposure radiation source 24 , which in the present embodiment, an EUV radiation source for generating exposure radiation 26 in the form of extreme ultraviolet radiation having a wavelength less than 100 nm, in particular about 13.5 nm or about 6.8 nm. In other embodiments, the exposure radiation source 24 eg exposure radiation 26 in the UV wavelength range, such as at 365 nm, 248 nm or 193 nm.
  • Furthermore, the projection exposure system includes 10 a beam-shaping illumination optics 28 , what a 1 is exemplified in the form of a reflective element, but in reality may include multiple optical elements. The illumination optics 28 serves the product structures 16 in the die area 18 on the mask 12 with the exposure radiation 26 to illuminate.
  • Furthermore, the projection exposure system includes 10 a projection lens 30 with one perpendicular to the mask 12 aligned optical axis 31 , The projection lens 30 comprises a series of reflective optical elements 32 , Four such optical elements 32 are exemplary in 1 shown. In this figure is still a beam path 33 the one in the mapping of the mask structures 16 through the projection lens 30 ongoing exposure radiation 26 shown.
  • The substrate 34 is on a substrate table 35 arranged in the form of a so-called "wafer stage". Upon exposure of the substrate 34 will both the mask 12 as well as the substrate 34 by means of the mask table 14 or the substrate table 35 for generating a field on the substrate 34 moved or "scanned". The displacement is usually in the long direction of the field, ie in the y-direction according to 1 , Before the exposure of another field becomes the substrate 34 in the x / y Plane offset by a given distance between the fields.
  • The projection exposure machine 10 further comprises a measuring device 42 for monitoring a lateral imaging stability of the projection exposure apparatus 10 during an exposure process. For this purpose, by means of the measuring device, the lateral position of the exposure process on the substrate 34 generated image of the product structures 16 the mask 12 certainly.
  • The measuring device 42 comprises a measuring radiation generating device 44 which can be designed for one or more measuring channels. In the in 1 illustrated embodiment, two measuring channels are provided. Each of the measurement channels illuminates one on the mask 12 arranged measuring structure 20 by means of a measuring radiation 50 , The measuring radiation generating device 44 comprises for each of the measuring channels an arrangement of a laser 45 , an optical fiber 46 , a beam expander 47 , as well as a beam splitter 52 ,
  • The laser 45 serves to generate the measuring radiation 50 This may be, for example, in the ultraviolet, infrared and / or visible wavelength range. According to one embodiment, the measuring radiation 50 a wavelength greater than 600 nm. By means of the optical waveguide 46 becomes the measuring radiation 50 to the beam expander 47 guided, from this it passes through the beam splitter 52 and hits the appropriate measurement structure 20 on the mask 12 ,
  • As mentioned above, the mask has 12 in the present embodiment, two measuring structures 20 on. As in 2 These are illustrated on the two long sides of the die area 18 , in the so-called Ritzrahmenbereich 22 the mask 12 arranged. Under the scribe frame area 22 is the area of the mask 12 to understand which of the above with reference to 3 described scratching frame 40 of the substrate 34 is shown.
  • In the in 2 illustrated embodiment are the measuring structures 20 each in the form of an elongated two-dimensional reflection grating, ie a grid with a checkerboard-like structure formed. The reflection grating can be designed as a diffraction structure or as a moiré structure. The measuring radiation is in the respective measuring channel 50 at the corresponding measuring structure 20 reflects, passes through the projection lens 30 and encounters an associated reflective structure 38 on the substrate 34 , The beam path 50 - 1 the measuring radiation 50 through the projection lens 30 is in 1 only in the areas between the mask 12 and the first optical element 32 as well as between the last optical element 32 and the substrate 34 , each with broken lines, illustrated.
  • The reflective structures associated with the two measurement channels 38 have analogous to the measuring structures 20 on the mask 12 elongated shape and in the present embodiment are each designed as a Littrow grating. The reflective structures 38 especially in the context of a previously applied to the substrate 34 applied lithography layer on the substrate 34 have been written.
  • Of the reflective structures constructed as Littrow grids 38 becomes the incoming measuring radiation 50 - 1 each reflected back in itself, passes through the projection lens 30 as returning measuring radiation 50 - 2 , then returns to the appropriate measurement structure 20 , is reflected on it and then by means of the beam splitter 52 to a two-dimensional resolution detection device 54 directed.
  • This is the result of the first reflection on the measuring structure 20 in the intensity distribution of the measuring radiation 50 embossed patterns on the measuring structure 20 projected. Is the projection lens 30 With regard to its lateral imaging property, this is perfectly adjusted to the intensity distribution of the returning measuring radiation 50 - 2 embossed patterns with the pattern of the measurement structure 20 congruent. When shifting the lateral imaging property of the projection lens 30 The pattern impressed into the intensity distribution shifts relative to the pattern of the measurement structure 20 , whereby an overlay arises whose intensity distribution is recorded by means of the detection device.
  • Is it the measurement structures 20 around diffraction structures, so arises on the detection device 54 an interference pattern, if it concerns Moire structures, then a characteristic Moire overlay arises. By evaluating the intensity distributions recorded for the two measuring channels by means of an evaluation device 56 becomes the lateral imaging stability of the projection lens 30 while simultaneously using the exposure radiation 26 taking place picture of product structures 16 supervised. On the one hand, uniform lateral displacements of the image (in x - and y Direction) and on the other hand also image field enlargements (in x - direction, and possibly also in y Direction) and possibly also field rotations are detected.
  • If such lateral aberrations occur, they can still do so during the exposure process, in particular in real time, by appropriate manipulation of exposure settings on the projection exposure apparatus 10 Getting corrected.
  • The above description of exemplary embodiments, embodiments or embodiments is to be understood as an example. The disclosure thus made makes it possible for the skilled person, on the one hand, to understand the present invention and the associated advantages, and on the other hand, in the understanding of the person skilled in the art, also encompasses obvious modifications and modifications of the structures and methods described. It is therefore intended that all such alterations and modifications as fall within the scope of the invention as defined by the appended claims, as well as equivalents, be covered by the scope of the claims.
  • LIST OF REFERENCE NUMBERS
  • 10
    Projection exposure system
    12
    mask
    14
    mask table
    16
    product structures
    18
    The area
    20
    measurement structure
    22
    Ritz frame area
    24
    Exposure radiation source
    26
    radiation exposure
    28
    illumination optics
    30
    projection lens
    31
    optical axis
    32
    optical elements
    33
    Beam path of the exposure radiation
    34
    substratum
    35
    substrate table
    36
    The area
    38
    reflective structure
    40
    kerf
    42
    measuring device
    44
    Measuring radiation producing device
    45
    laser
    46
    optical fiber
    47
    beam
    50
    measuring radiation
    50-1
    continuous measuring radiation
    50-2
    returning measuring radiation
    52
    beamsplitter
    54
    detection device
    56
    evaluation
  • QUOTES INCLUDE IN THE DESCRIPTION
  • This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.
  • Cited patent literature
    • US 2011/0157571 A1 [0004]

Claims (10)

  1. Projection exposure apparatus (10) for microlithography with: a mask (12) which comprises a die area (18) with product structures (16) and a scribe frame area (22) arranged outside the die area, - A projection lens (30) for imaging the mask on a substrate (34) during an exposure process, and - a measuring device (42) for monitoring a lateral imaging stability of the projection exposure apparatus during the exposure process, wherein the measuring device (42) comprises a measuring radiation generating device (44) which is configured to a arranged on the mask measuring structure (20) with measuring radiation (50) to irradiate that the measurement radiation, after interacting with the measurement structure, passes through the entire projection objective, is reflected back on a reflective structure (38) arranged on the substrate, and encounters the measurement structure again after passing through the entire projection objective again, and wherein the measurement structure (20) is in the score frame region (22) of the mask is arranged.
  2. Projection exposure system according to Claim 1 in that the reflective structure (38) is configured to reflect the incident measuring radiation (50) back into itself.
  3. A projection exposure apparatus according to any one of the preceding claims, further comprising the substrate (34), the substrate comprising a scribe frame (40) for singulating semiconductor chips to be formed on the substrate, and wherein the reflective structure (38) is disposed in the scribe frame of the substrate ,
  4. Projection exposure apparatus according to one of the preceding claims, which further comprises a detection device (54) for detecting an intensity distribution of the measurement radiation (50) after its repeated impact on the measurement structure (20).
  5. Projection exposure apparatus according to one of the preceding claims, wherein the measuring device (42) comprises an evaluation device (56) for determining the lateral imaging stability of the projection exposure apparatus (10) from the intensity distribution of the measurement radiation (50) detected by the detection device (54).
  6. A projection exposure apparatus according to any one of the preceding claims, wherein the measurement structure (20) is configured as a diffractive structure.
  7. A projection exposure apparatus according to any one of the preceding claims, wherein the measurement structure (20) is configured as a moiré structure.
  8. Projection exposure apparatus according to one of the preceding claims, which is configured for operation in the EUV wavelength range.
  9. A method for monitoring lateral imaging stability of a microlithographic projection exposure apparatus (10) comprising the steps of: - Providing a mask (12) having a product structures (16) having die area (18) and a arranged outside the die area Ritzrahmenbereich (22), wherein in Ritzrahmenbereich a measuring structure (20) is arranged, and - Illuminating the measuring structure with measuring radiation (50) during an exposure process in which the mask is imaged by means of a projection lens of the projection exposure apparatus on a substrate (34), wherein the measuring radiation passes through the entire projection lens after interaction with the measuring structure, arranged on one on the substrate reflective structure (38) is reflected back and after repeated passage through the entire projection lens again hits the measuring structure.
  10. Method according to Claim 9 in which an intensity distribution of the measuring radiation is recorded after the second time the measuring radiation hits the measuring structure (20) and the lateral imaging stability of the projection exposure apparatus is determined from the recorded intensity distribution.
DE102018208644.3A 2018-05-30 2018-05-30 Projection exposure apparatus with a measuring device for monitoring a lateral imaging stability Ceased DE102018208644A1 (en)

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Application Number Priority Date Filing Date Title
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005062618A1 (en) * 2005-12-23 2007-07-05 Carl Zeiss Smt Ag Optical imaging device for microlithography, has measuring device including detection unit that detects measurement image of part of projection pattern produced by optical units, and determining imaging error using measurement image
DE102008004762A1 (en) * 2008-01-16 2009-07-30 Carl Zeiss Smt Ag Projection exposure apparatus for microlithography with a measuring device
US20110157571A1 (en) 2008-06-26 2011-06-30 Carl Zeiss Smt Gmbh Projection exposure system for microlithography and method of monitoring a lateral imaging stability

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005062618A1 (en) * 2005-12-23 2007-07-05 Carl Zeiss Smt Ag Optical imaging device for microlithography, has measuring device including detection unit that detects measurement image of part of projection pattern produced by optical units, and determining imaging error using measurement image
DE102008004762A1 (en) * 2008-01-16 2009-07-30 Carl Zeiss Smt Ag Projection exposure apparatus for microlithography with a measuring device
US20110157571A1 (en) 2008-06-26 2011-06-30 Carl Zeiss Smt Gmbh Projection exposure system for microlithography and method of monitoring a lateral imaging stability

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