DE102014114099A1 - Gasphasen-Schichtabscheidung-Vorrichtung - Google Patents

Gasphasen-Schichtabscheidung-Vorrichtung Download PDF

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Publication number
DE102014114099A1
DE102014114099A1 DE102014114099.0A DE102014114099A DE102014114099A1 DE 102014114099 A1 DE102014114099 A1 DE 102014114099A1 DE 102014114099 A DE102014114099 A DE 102014114099A DE 102014114099 A1 DE102014114099 A1 DE 102014114099A1
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DE
Germany
Prior art keywords
gas
film deposition
deposition
injector
deposition apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102014114099.0A
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German (de)
English (en)
Inventor
Suda Noboru
Oishi Takahiro
Komeno Junji
Po-Ching Lu
Shih-Yung Shieh
Bu-Chin Chung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hermes Epitek Corp
Original Assignee
Hermes Epitek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hermes Epitek Corp filed Critical Hermes Epitek Corp
Publication of DE102014114099A1 publication Critical patent/DE102014114099A1/de
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE102014114099.0A 2013-10-04 2014-09-29 Gasphasen-Schichtabscheidung-Vorrichtung Withdrawn DE102014114099A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-209507 2013-10-04
JP2013209507A JP6058515B2 (ja) 2013-10-04 2013-10-04 気相成膜装置

Publications (1)

Publication Number Publication Date
DE102014114099A1 true DE102014114099A1 (de) 2015-04-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE102014114099.0A Withdrawn DE102014114099A1 (de) 2013-10-04 2014-09-29 Gasphasen-Schichtabscheidung-Vorrichtung

Country Status (6)

Country Link
US (1) US20150096496A1 (https=)
JP (1) JP6058515B2 (https=)
KR (1) KR101681375B1 (https=)
CN (1) CN104513968B (https=)
DE (1) DE102014114099A1 (https=)
TW (1) TWI521089B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021144161A1 (de) * 2020-01-17 2021-07-22 Aixtron Se Cvd-reaktor mit doppelter vorlaufzonenplatte

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102773048B (zh) * 2011-05-09 2017-06-06 波利玛利欧洲股份公司 生产环己酮肟的氨肟化反应器
TWI563542B (en) * 2014-11-21 2016-12-21 Hermes Epitek Corp Approach of controlling the wafer and the thin film surface temperature
JP6569406B2 (ja) * 2015-09-09 2019-09-04 セイコーエプソン株式会社 原子層堆積装置および原子層堆積の成膜方法
JP6685216B2 (ja) * 2016-01-26 2020-04-22 東京エレクトロン株式会社 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
TWI612176B (zh) * 2016-11-01 2018-01-21 漢民科技股份有限公司 應用於沉積系統的氣體分配裝置
US10844490B2 (en) 2018-06-11 2020-11-24 Hermes-Epitek Corp. Vapor phase film deposition apparatus
CN214848503U (zh) 2018-08-29 2021-11-23 应用材料公司 注入器设备、基板处理设备及在机器可读介质中实现的结构
TWI680201B (zh) * 2018-09-27 2019-12-21 漢民科技股份有限公司 氣相沉積裝置及其蓋板與噴氣裝置
DE102018130140A1 (de) * 2018-11-28 2020-05-28 Aixtron Se Verfahren zur Herstellung eines Bestandteils eines CVD-Reaktors
CN112323043A (zh) * 2020-10-30 2021-02-05 泉芯集成电路制造(济南)有限公司 一种气体分配器以及原子层沉积反应设备
CN119220962A (zh) * 2023-06-28 2024-12-31 中微半导体设备(上海)股份有限公司 晶圆承载装置、气相沉积设备及使用方法

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JP2002175992A (ja) 2000-12-07 2002-06-21 Ee Technologies:Kk 基板回転機構を備えた成膜装置
JP2005005693A (ja) 2003-05-16 2005-01-06 Asekku:Kk 化学気相成長装置
JP2011155046A (ja) 2010-01-26 2011-08-11 Japan Pionics Co Ltd Ｉｉｉ族窒化物半導体の気相成長装置

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JP2005005693A (ja) 2003-05-16 2005-01-06 Asekku:Kk 化学気相成長装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021144161A1 (de) * 2020-01-17 2021-07-22 Aixtron Se Cvd-reaktor mit doppelter vorlaufzonenplatte

Also Published As

Publication number Publication date
KR20150040228A (ko) 2015-04-14
JP2015076417A (ja) 2015-04-20
JP6058515B2 (ja) 2017-01-11
TW201531589A (zh) 2015-08-16
CN104513968B (zh) 2017-04-12
US20150096496A1 (en) 2015-04-09
TWI521089B (zh) 2016-02-11
KR101681375B1 (ko) 2016-11-30
CN104513968A (zh) 2015-04-15

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