DE102014101024B3 - Power semiconductor device - Google Patents
Power semiconductor device Download PDFInfo
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- DE102014101024B3 DE102014101024B3 DE201410101024 DE102014101024A DE102014101024B3 DE 102014101024 B3 DE102014101024 B3 DE 102014101024B3 DE 201410101024 DE201410101024 DE 201410101024 DE 102014101024 A DE102014101024 A DE 102014101024A DE 102014101024 B3 DE102014101024 B3 DE 102014101024B3
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- 239000003990 capacitor Substances 0.000 claims abstract description 102
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/02—Mountings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/02—Mountings
- H01G2/06—Mountings specially adapted for mounting on a printed-circuit support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/26—Structural combinations of electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices with each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/14—Mounting supporting structure in casing or on frame or rack
- H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
- H05K7/1427—Housings
- H05K7/1432—Housings specially adapted for power drive units or power converters
- H05K7/14329—Housings specially adapted for power drive units or power converters specially adapted for the configuration of power bus bars
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Abstract
Die Erfindung betrifft eine Leistungshalbleitereinrichtung mit Leistungshalbleiterbauelementen, mit einem Grundkörper und mit mehreren Kondensatoren, wobei die Leistungshalbleitereinrichtung eine Kondensatorbefestigungsvorrichtung aufweist, die eine über die Kondensatoren gestülpte einstückige Rahmenvorrichtung und eine einstückige Spannvorrichtung aufweist, wobei die Rahmenvorrichtung längliche Ausnehmungen aufweisende Rahmenelemente aufweist, wobei die Rahmenelemente infolge der Ausnehmungen jeweilig Rahmenelementfinger ausbilden, die einen jeweiligen Kondensator lateral einrahmen, wobei die Spannvorrichtung über die Rahmenelementfinger gestülpte Spannelemente aufweist, die jeweilig die Rahmenelementfinger eines jeweiligen Rahmenelements lateral umschließen, wobei die Spannelemente und die Rahmelementfinger eine derartige geometrische Form aufweisen, dass das jeweilige Spannelement in Richtung auf den jeweiligen Kondensator zu, gegen die jeweiligen Rahmelementfinger drückt und die jeweiligen Rahmelementfinger lateral gegen den jeweiligen Kondensator drücken, wobei die Kondensatorbefestigungsvorrichtung mit dem Grundkörper verbunden ist. Die Erfindung schafft eine Leistungshalbleitereinrichtung, bei der die Kondensatoren der Leistungshalbleitereinrichtung sicher und zuverlässig befestigt sind, wobei die Befestigung der Kondensatoren rationell mit wenig Aufwand realisierbar ist.The invention relates to a power semiconductor device with power semiconductor components, with a base body and with a plurality of capacitors, the power semiconductor device having a capacitor fastening device which has a one-piece frame device fitted over the capacitors and a one-piece tensioning device, the frame device having elongate recesses having frame elements, the frame elements as a result of the recesses form respective frame element fingers which laterally frame a respective capacitor, the tensioning device having tension elements placed over the frame element fingers, which laterally enclose the frame element fingers of a respective frame element, the tension elements and the frame element fingers having such a geometric shape that the respective tension element in Direction towards the respective capacitor, presses against the respective frame element fingers and each press the frame element finger laterally against the respective capacitor, the capacitor fastening device being connected to the base body. The invention provides a power semiconductor device in which the capacitors of the power semiconductor device are securely and reliably attached, the capacitors being able to be attached efficiently with little effort.
Description
Die Erfindung betrifft eine Leistungshalbleitereinrichtung. The invention relates to a power semiconductor device.
Bei aus dem Stand der Technik bekannten Leistungshalbleitereinrichtungen sind im Allgemeinen auf einem Substrat Leistungshalbleiterbauelemente, wie z.B. Leistungshalbleiterschalter und/oder Dioden angeordnet und mittels einer Leiterschicht des Substrats, sowie Bonddrähten und/oder einem Folienverbund miteinander elektrisch leitend verbunden. Die Leistungshalbleiterschalter liegen dabei im Allgemeinen in Form von Transistoren, wie z.B. IGBTs (Insulated Gate Bipolar Transistor) oder MOSFETs (Metal Oxide Semiconductor Field Effect Transistor), oder in Form von Thyristoren vor. In power semiconductor devices known in the art, power semiconductor devices, such as a semiconductor device, are generally mounted on a substrate. Power semiconductor switch and / or diodes arranged and electrically conductively connected to each other by means of a conductor layer of the substrate, and bonding wires and / or a film composite. The power semiconductor switches are generally in the form of transistors, e.g. IGBTs (Insulated Gate Bipolar Transistor) or MOSFETs (Metal Oxide Semiconductor Field Effect Transistor), or in the form of thyristors.
Die Leistungshalbleiterbauelemente sind dabei häufig elektrisch zu einer einzelnen oder mehreren sogenannten Halbbrückenschaltungen verschalten, die z.B. zum Gleich- und Wechselrichten von elektrischen Spannungen und Strömen verwendet werden. Leistungshalbleitereinrichtungen weisen dabei im Allgemeinen als Energiespeicher elektrisch parallel und/oder in Reihe geschaltete Kondensatoren auf, die im Allgemeinen eine an der Leistungshalbleitereinrichtung auftretende Gleichspannung puffern. Solche Kondensatoren werden fachüblich auch als Zwischenkreiskondensatoren bezeichnet. The power semiconductor components are often electrically connected to a single or a plurality of so-called half-bridge circuits, which are e.g. be used for Gleich- and inverting electrical voltages and currents. In this case, power semiconductor devices generally have, as an energy store, electrically parallel and / or series-connected capacitors, which generally buffer a DC voltage occurring at the power semiconductor device. Such capacitors are commonly referred to as DC link capacitors.
Die Kondensatoren sind über ihre elektrischen Anschlusselement mit einem einzelnen oder mehreren Komponenten der Leistungshalbleitereinrichtung mechanisch und elektrisch verbunden. Da Leistungshalbleitereinrichtungen häufig mechanischen Stoß- und/oder Schwingungsbelastungen ausgesetzt sind, kann es zu einem mechanischen Versagen der elektrischen Anschlusselemente der Kondensatoren kommen, was zu einer Beschädigung und Fehlfunktion der Leistungshalbleitereinrichtungen führt. The capacitors are mechanically and electrically connected via their electrical connection element to a single or a plurality of components of the power semiconductor device. Since power semiconductor devices are often exposed to mechanical shock and / or vibration loads, mechanical failure of the electrical connection elements of the capacitors can occur, which leads to damage and malfunction of the power semiconductor devices.
Aus der
Aus der
Aus der
Aus der
Aus der
Aus der
Es ist Aufgabe der Erfindung eine Leistungshalbleitereinrichtung zu schaffen, bei der die Kondensatoren der Leistungshalbleitereinrichtung sicher und zuverlässig befestigt sind, wobei die Befestigung der Kondensatoren rationell mit wenig Aufwand realisierbar ist. It is an object of the invention to provide a power semiconductor device in which the capacitors of the power semiconductor device are secured securely and reliably, wherein the attachment of the capacitors can be realized efficiently with little effort.
Diese Aufgabe wird gelöst durch eine Leistungshalbleitereinrichtung mit Leistungshalbleiterbauelementen, mit einem Grundkörper und mit mehreren Kondensatoren, die mit den Leistungshalbleiterbauelementen elektrisch leitend verbunden sind, wobei die Leistungshalbleitereinrichtung eine Kondensatorbefestigungsvorrichtung aufweist, die eine über die Kondensatoren gestülpte einstückige Rahmenvorrichtung und eine einstückige Spannvorrichtung aufweist, wobei die Rahmenvorrichtung längliche Ausnehmungen aufweisende Rahmenelemente aufweist, wobei die Rahmenelemente infolge der Ausnehmungen jeweilig Rahmenelementfinger ausbilden, die einen jeweiligen Kondensator lateral einrahmen, wobei die Spannvorrichtung über die Rahmenelementfinger gestülpte Spannelemente aufweist, die jeweilig die Rahmenelementfinger eines jeweiligen Rahmenelements lateral umschließen, wobei die Spannelemente und die Rahmelementfinger eine derartige geometrische Form aufweisen, dass das jeweilige Spannelement in Richtung auf den jeweiligen Kondensator zu, gegen die jeweiligen Rahmelementfinger drückt und die jeweiligen Rahmelementfinger lateral gegen den jeweiligen Kondensator drücken, wobei die Kondensatorbefestigungsvorrichtung mit dem Grundkörper verbunden ist. This object is achieved by a power semiconductor device with Power semiconductor devices, comprising a main body and having a plurality of capacitors, which are electrically connected to the power semiconductor components, wherein the power semiconductor device comprises a capacitor fixing device having a one-piece frame device and a one-piece clamping device, the frame device having elongated recesses having frame members, wherein the frame members as a result of the recesses respectively form frame member fingers laterally framing a respective condenser, the chuck having clamping members formed over the frame member fingers respectively laterally surrounding the frame member fingers of a respective frame member, the clamping members and the frame member fingers having such a geometric shape that the respective clamping element in the direction of the respective capacitor to, against the respective Rahmelemen Pressing finger and press the respective Rahmelementfinger laterally against the respective capacitor, wherein the capacitor fixing device is connected to the main body.
Vorteilhafte Ausbildungen der Erfindung ergeben sich aus den abhängigen Ansprüchen. Advantageous embodiments of the invention will become apparent from the dependent claims.
Es erweist sich als vorteilhaft, wenn der Querschnitte der Wände der Rahmenelementfinger und der Querschnitt der Wände der Spannelemente zueinander korrespondierende keilförmige Formen aufweisen, da dann mittels der Keilwirkung auf einfache Art und Weise ein Druck erzeugt wird, der die jeweiligen Rahmelementfinger lateral gegen den jeweiligen Kondensator drückt. It proves to be advantageous if the cross-sections of the walls of the frame element fingers and the cross-section of the walls of the clamping elements have wedge-shaped shapes corresponding to one another, since then a pressure is generated in a simple manner by means of the wedge effect, which produces the respective cream element fingers laterally against the respective condenser suppressed.
Weiterhin erweist es sich als vorteilhaft, wenn die Rahmenelementfinger in Richtung zu einer Oberseite der Kondensatoren eine abnehmende Wandstärke aufweisen und die Spannelemente in Richtung zur Oberseite der Kondensatoren eine zunehmende Wandstärke aufweisen. Hierdurch können die zueinander korrespondierenden keilförmigen Formen besonders einfach realisiert werden. Furthermore, it proves to be advantageous if the frame element fingers have a decreasing wall thickness in the direction of an upper side of the capacitors and the clamping elements have an increasing wall thickness in the direction of the upper side of the capacitors. As a result, the mutually corresponding wedge-shaped shapes can be realized particularly easily.
Weiterhin erweist es sich als vorteilhaft, wenn die Rahmenelementfinger jeweilig an ihrem oberen Ende innenseitig eine Nase aufweisen. Falls sich, widererwarten, ein Kondensator lösen sollte, so wird der betreffende Kondensator durch die Nasen zumindest im Rahmenelement gehalten. Hierdurch kann eine weitere Beschädigung der Leistungshalbleitereinrichtung durch einen losen Kondensator vermieden werden. Furthermore, it proves to be advantageous if the frame element fingers each have at their upper end inside a nose. If, contrary to expectations, a capacitor should dissolve, the capacitor in question is held by the lugs at least in the frame element. As a result, a further damage to the power semiconductor device can be avoided by a loose capacitor.
Weiterhin erweist es sich als vorteilhaft, wenn die Rahmenvorrichtung ein Rahmenvorrichtungsbefestigungsrahmenelement aufweist mittels dessen die Rahmenvorrichtung mit dem Grundkörper verbunden ist. Hierdurch wird auf einfache Art und Weise eine zuverlässige Befestigung der Rahmenvorrichtung am Grundkörper realisiert. Furthermore, it proves to be advantageous if the frame device has a Rahmenvorrichtungsbefestigungsrahmenelement means of which the frame device is connected to the main body. As a result, a reliable attachment of the frame device is realized on the base body in a simple manner.
Ferner erweist es sich als vorteilhaft, wenn die Spannvorrichtung ein Spannvorrichtungsbefestigungsrahmenelement aufweist mittels dessen die Spannvorrichtung mit dem Grundkörper verbunden ist. Hierdurch wird auf einfache Art und Weise eine zuverlässige Befestigung der Spannvorrichtung am Grundkörper realisiert. Furthermore, it proves to be advantageous if the clamping device has a clamping device fastening frame element by means of which the clamping device is connected to the base body. As a result, a reliable attachment of the clamping device on the base body is realized in a simple manner.
Ferner erweist es sich als vorteilhaft, wenn die Leistungshalbleiterbauelemente thermisch leitend mit dem Grundkörper verbunden sind, wobei der Grundkörper als Grundplatte oder als Kühlkörper ausgebildet ist. Hierdurch wird ein kompakter Aufbau der Leistungshalbleitereinrichtung erzielt. Furthermore, it proves to be advantageous if the power semiconductor components are thermally conductively connected to the base body, wherein the base body is designed as a base plate or as a heat sink. As a result, a compact structure of the power semiconductor device is achieved.
Weiterhin erweist es sich als vorteilhaft, wenn die Kondensatoren matrixartig angeordnet sind, da dann die Kondensatoren platzsparend angeordnet sind. Furthermore, it proves to be advantageous if the capacitors are arranged like a matrix, since then the capacitors are arranged to save space.
Weiterhin erweist es sich als vorteilhaft, wenn die Leistungshalbleiterbauelemente auf elektrischen leitenden Leiterbahnen angeordnet sind. Hierdurch wird ein kompakter Aufbau der Leistungshalbleitereinrichtung erzielt. Furthermore, it proves to be advantageous if the power semiconductor components are arranged on electrically conductive conductor tracks. As a result, a compact structure of the power semiconductor device is achieved.
Weiterhin erweist es sich als vorteilhaft, wenn zwischen den elektrischen leitenden Leiterbahnen und dem Grundkörper eine elektrisch nicht leitende Isolationsschicht angeordnet ist, da dann der Grundkörper elektrisch potentialfrei angeordnet ist. Furthermore, it proves to be advantageous if an electrically non-conductive insulating layer is arranged between the electrically conductive interconnects and the base body, since then the base body is arranged electrically floating.
Ausführungsbeispiele der Erfindung sind in den Figuren dargestellt und werden im Folgenden näher erläutert. Dabei zeigen: Embodiments of the invention are illustrated in the figures and are explained in more detail below. Showing:
In den
Die erfindungsgemäße Leistungshalbleitereinrichtung
Das jeweilige Leistungshalbleiterbauelement liegt vorzugsweise in Form eines Leistungshalbleiterschalters oder einer Diode vor. Die Leistungshalbleiterschalter liegen dabei im Allgemeinen in Form von Transistoren, wie z.B. IGBTs (Insulated Gate Bipolar Transistor) oder MOSFETs (Metal Oxide Semiconductor Field Effect Transistor), oder in Form von Thyristoren vor. Im Rahmen des Ausführungsbeispiels sind die Leistungshalbleiterbauelemente
Die Leistungshalbleiterbauelemente
Es sei weiterhin angemerkt, dass die Leistungshalbleiterbauelemente
Beim Ausführungsbeispiel weist die Leistungshalbleitereinrichtung
Die Leistungshalbleiterbauelemente
Es sei an dieser Stelle angemerkt, dass der Grundkörper
Im Rahmen des Ausführungsbeispiels sind die Leistungshalbleiterbauelemente
Die Kondensatoren
Im Rahmen des Ausführungsbeispiels ist zwischen dem Verschienungsplattensystem
Zur mechanischen Befestigung der Kondensatoren
Die Rahmenvorrichtung
Die Spannvorrichtung
Vorzugsweise weisen, wie beispielhaft in
Die Rahmenelementfinger
Im Rahmen des Ausführungsbeispiels weist die Spannvorrichtung
Die Kondensatorbefestigungsvorrichtung
Alternativ könnte die Kondensatorbefestigungsvorrichtung
Die Kondensatoren
Wie in
Claims (10)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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DE201410101024 DE102014101024B3 (en) | 2014-01-29 | 2014-01-29 | Power semiconductor device |
KR1020150000491A KR102224471B1 (en) | 2014-01-29 | 2015-01-05 | Power semiconductor device |
CN201510037405.7A CN104810147B (en) | 2014-01-29 | 2015-01-23 | Power semiconductor arrangement |
Applications Claiming Priority (1)
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DE201410101024 DE102014101024B3 (en) | 2014-01-29 | 2014-01-29 | Power semiconductor device |
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DE102014101024B3 true DE102014101024B3 (en) | 2014-12-04 |
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DE201410101024 Active DE102014101024B3 (en) | 2014-01-29 | 2014-01-29 | Power semiconductor device |
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KR (1) | KR102224471B1 (en) |
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EP3240380A1 (en) * | 2016-04-25 | 2017-11-01 | GvA Leistungselektronik GmbH | Converter assembly |
WO2019154592A1 (en) * | 2018-02-06 | 2019-08-15 | Siemens Aktiengesellschaft | Power electronic circuit having a plurality of power modules |
CN111684557A (en) * | 2018-02-06 | 2020-09-18 | 西门子股份公司 | Capacitor structure and power module with power electronic component |
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DE102016105783B4 (en) * | 2016-03-30 | 2019-05-16 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor device |
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Also Published As
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KR20150090830A (en) | 2015-08-06 |
CN104810147B (en) | 2018-06-08 |
CN104810147A (en) | 2015-07-29 |
KR102224471B1 (en) | 2021-03-05 |
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