DE102013215592A1 - Power electronic circuit with planar electrical contacting - Google Patents

Power electronic circuit with planar electrical contacting Download PDF

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DE102013215592A1
DE102013215592A1 DE201310215592 DE102013215592A DE102013215592A1 DE 102013215592 A1 DE102013215592 A1 DE 102013215592A1 DE 201310215592 DE201310215592 DE 201310215592 DE 102013215592 A DE102013215592 A DE 102013215592A DE 102013215592 A1 DE102013215592 A1 DE 102013215592A1
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power electronic
electronic circuit
layer
substrate
buffer layer
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Gerhard Mitic
Karl Weidner
Stefan Kiefl
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Siemens AG
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Siemens AG
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Priority to PCT/EP2014/066417 priority patent/WO2015018721A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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Abstract

Leistungselektronische Schaltung, umfassend: – ein Substrat, – wenigstens ein auf dem Substrat angeordnetes leistungselektronisches Bauelement, – eine das Substrat und das leistungselektronische Bauelement in Teilen bedeckende elektrisch isolierende Schicht, – wenigstens eine die elektrisch isolierende Schicht wenigstens in Teilen bedeckende Metallschicht, – wenigstens ein die Metallschicht formschlüssig zumindest teilweise überdeckender Pufferschichtaufbau zur Pufferung gegen mechanische Ausdehnung, wobei der Pufferschichtaufbau wenigstens eine erste Schicht aus einem duktilen ersten Material und wenigstens eine zweite Schicht aus einem hochreißfesten zweiten Material aufweist.A power electronic circuit, comprising: a substrate, at least one power electronic component arranged on the substrate, an electrically insulating layer partially covering the substrate and the power electronic component, at least one metal layer at least partially covering the electrically insulating layer, at least one the metal layer at least partially overlapping buffer layer construction for buffering against mechanical expansion, wherein the buffer layer structure comprises at least a first layer of a ductile first material and at least a second layer of a highly tear-resistant second material.

Description

Die Erfindung betrifft eine leistungselektronische Schaltung mit planarer elektrischer Kontaktierung, die ein Substrat, wenigstens ein auf dem Substrat angeordnetes leistungselektronisches Bauelement, eine das Substrat und das leistungselektronische Bauelement zumindest in Teilen bedeckende elektrisch isolierende Schicht und wenigstens eine die elektrisch isolierende Schicht wenigstens in Teilen bedeckende Metallschicht umfasst. The invention relates to a power electronic circuit having planar electrical contacting, comprising a substrate, at least one power electronic component disposed on the substrate, an electrically insulating layer at least partially covering the substrate and the power electronic component, and at least one metal layer at least partially covering the electrically insulating layer includes.

Beim elektrischen Versagen von IGBT-Modulen wird eine erhebliche thermische Energie freigesetzt, bevor es zum Abschalten des Moduls kommt bzw. ein dauerhafter Kurzschluss vorliegt. Diese thermische Energie führt dann unter Umständen zu einer Zerstörung der Materialien, die dann mit hoher Energie weggeschleudert werden, was den Charakter einer Explosion hat. Kommerzielle Module weisen hierfür Sollbruchstellen auf, die einer definierten Ableitung des Überdrucks dienen. Electrical failure of IGBT modules releases significant thermal energy before the module shuts down or a permanent short circuit occurs. This thermal energy then leads to a destruction of the materials, which are then thrown away with high energy, which has the character of an explosion. Commercial modules have this predetermined breaking points, which serve a defined derivative of the overpressure.

Es ist Aufgabe der vorliegenden Erfindung, eine leistungselektronische Schaltung anzugeben, die für den Fall eines sehr hohen Eintrags von Wärme gesichert ist gegen eine Explosion. It is an object of the present invention to provide a power electronic circuit which is secured against the explosion in the case of a very high input of heat.

Diese Aufgabe wird durch eine leistungselektronische Schaltung mit den Merkmalen von Anspruch 1 gelöst. Vorteilhafte Ausgestaltungen und Weiterbildungen sind Gegenstand der abhängigen Ansprüche. This object is achieved by a power electronic circuit having the features of claim 1. Advantageous embodiments and further developments are the subject of the dependent claims.

Die erfindungsgemäße leistungselektronische Schaltung umfasst ein Substrat, beispielsweise ein DCB-Substrat (= direct copper bond). Weiterhin umfasst die leistungselektronische Schaltung wenigstens ein auf dem Substrat angeordnetes leistungselektronisches Bauelement, beispielsweise einen IGBT oder einen anderen leistungselektronischen Schalter. The power electronic circuit according to the invention comprises a substrate, for example a DCB substrate (= direct copper bond). Furthermore, the power electronic circuit comprises at least one power electronic component arranged on the substrate, for example an IGBT or another power electronic switch.

Auf dem Substrat und dem leistungselektronischen Bauelement ist eine in Teilen bedeckende elektrisch isolierende Schicht aufgebracht. Diese Schicht kann beispielsweise eine isolierende Folie, insbesondere eine Polyimid-Folie sein. Zweckmäßig umfasst die Folie Fenster, d.h. Löcher, im Bereich von Kontaktflächen des leistungselektronischen Bauelements. On the substrate and the power electronic component, a partially covering electrically insulating layer is applied. This layer may be, for example, an insulating film, in particular a polyimide film. Suitably, the film comprises windows, i. Holes, in the range of contact surfaces of the power electronic component.

Zur elektrischen Leitung ist weiterhin wenigstens eine die elektrisch isolierende Schicht wenigstens in Teilen bedeckende Metallschicht vorgesehen. Die Metallschicht kann dabei eine oder mehrere getrennte Leiterbahnen ausbilden. Sie kann auch flächig vorliegen. Zweckmäßig besteht eine elektrische Verbindung der Metallschicht durch eines der Fenster in der isolierenden Schicht zu einer der Kontaktflächen. Die Metallschicht besteht bevorzugt im Wesentlichen aus Kupfer. Beispielsweise kann die Metallschicht aus mehreren Teilschichten bestehen, wobei die obere Schicht galvanisch aufgebracht ist. For electrical conduction, furthermore, at least one metal layer which at least partially covers the electrically insulating layer is provided. The metal layer can form one or more separate conductor tracks. It can also be available over a wide area. Suitably, an electrical connection of the metal layer through one of the windows in the insulating layer to one of the contact surfaces. The metal layer preferably consists essentially of copper. For example, the metal layer may consist of several partial layers, wherein the upper layer is applied galvanically.

Schließlich umfasst die leistungselektronische Schaltung wenigstens einen die Metallschicht formschlüssig zumindest teilweise überdeckenden Pufferschichtaufbau zur Pufferung gegen mechanische Ausdehnung. Der Pufferschichtaufbau weist wenigstens eine erste Schicht aus einem duktilen ersten Material und wenigstens eine zweite Schicht aus einem im Vergleich zum duktilen Material hochzug-, hochdruck- und hochreiß-festem zweiten Material auf. Finally, the power electronic circuit comprises at least one buffer layer structure which positively surrounds the metal layer at least partially overlapping, for buffering against mechanical expansion. The buffer layer construction comprises at least a first layer of a ductile first material and at least a second layer of a high tensile, high pressure and high tear strength second material compared to the ductile material.

Für die Erfindung wurde erkannt, dass bei einer leistungselektronischen Schaltung, die eine planare Kontaktierung aufweist, wie beispielsweise aus der WO 2003/030247 A2 bekannt, ein guter Explosionsschutz erreichbar ist, indem ein Pufferschichtaufbau formschlüssig realisiert wird. Der Pufferschichtaufbau umfasst dabei Energie absorbierende Schichten. Die kinetische Energie wird dabei von dem mehrlagigen System aus erster und zweiter Schicht aufgenommen und auf eine möglichst große Fläche verteilt. Die kinetische Energie wird von dem Schichtaufbau aufgenommen, ohne dass Materialien der leistungselektronischen Schaltung nach außen durchdringen und Schädigungen im Umfeld verursachen. Dabei eignet sich die planare Aufbautechnologie besonders für die Aufbringung des mehrlagigen Schichtaufbaus, da die leistungselektronische Schaltung keine Bonddrähte besitzt und die Schichten direkt auf die elektrischen Verbindungen aufgebracht werden können. Dadurch, dass die Schichten direkt auf den planaren Kontaktierungsschichten formschlüssig aufgebracht werden, können hohe thermischen Verluste im Kurzschlussfall keine lokal hohen kinetischen Energien aufbauen, da es rasch zur Absorption der kinetischen Energie kommt. Die Aufbautechnik beispielsweise durch geschlossene Metallschichten ermöglicht gleichzeitig eine hermetische Ausführung von Leistungsmodulen, was das Eindringen von Feuchte oder Gasen verhindert. For the invention it was recognized that in a power electronic circuit having a planar contact, such as from the WO 2003/030247 A2 known, a good explosion protection can be achieved by a buffer layer structure is realized positively. The buffer layer structure comprises energy-absorbing layers. The kinetic energy is absorbed by the multilayer system of first and second layers and distributed over as large an area as possible. The kinetic energy is absorbed by the layer structure without the materials of the electronic power circuit penetrating to the outside and causing damage in the environment. In this case, the planar construction technology is particularly suitable for the application of the multilayer coating structure, since the power electronic circuit has no bonding wires and the layers can be applied directly to the electrical connections. Due to the fact that the layers are applied positively directly on the planar contacting layers, high thermal losses in the event of a short circuit can not build up locally high kinetic energies because the absorption of the kinetic energy occurs rapidly. The construction technique, for example, by closed metal layers simultaneously allows a hermetic execution of power modules, which prevents the ingress of moisture or gases.

Vorteilhaft ist es, wenn jeweils mehrere duktile und hochzug-, hochdruck- oder hochreiß-feste Schichten abwechselnd aufgebracht sind. Die Dicke der Schichten oder des gesamten Schichtaufbaus ist dabei vorteilhaft an die Leistungsdichte der leistungselektronischen Schaltung angepasst. It is advantageous if in each case a plurality of ductile and high-tensile, high-pressure or high-tear-resistant layers are applied alternately. The thickness of the layers or the entire layer structure is advantageously adapted to the power density of the power electronic circuit.

Die Schicht aus duktilem Material kann beispielsweise eine ein- oder mehrschichtige Netz- oder Folienstruktur aufweisen, beispielsweise aus reißfestem Gewebe aus Kohlefasern (Kevlar, Aramid) oder Kunststoffen, wie beispielsweise Polyethylen mit ultrahohem Molekulargewicht. Darüber hinaus können auch strukturierte Metallschäume mit gezielten Porositäten als duktile Schicht dienen. Die Schicht aus dem zweiten Material kann eine Metallschicht, vorzugsweise aus Hartmetallen, z.B. Nickellegierungen, Wolframcarbid sein. Andere Beispiele für das zweite Material sind Funktionskeramiken wie Oxidkeramik Al2O3 oder Siliziumcarbid SiC oder AlSiCu, AlN, LTCC, HTCC, Metalle (Eisenlegierungen), Polyethylenplatten oder Glasgewebeschichten. Die Schichten werden bevorzugt galvanisch aufgebracht, können aber auch als Folien auflaminiert, plasma- oder kaltgasgesprüht werden. The layer of ductile material may, for example, have a single- or multi-layered network or film structure, for example made of tear-resistant fabric of carbon fibers (kevlar, aramid) or plastics, such as ultrahigh molecular weight polyethylene. In addition, also structured metal foams can be targeted with Porosities serve as a ductile layer. The layer of the second material may be a metal layer, preferably of hard metals, eg nickel alloys, tungsten carbide. Other examples of the second material include functional ceramics such as oxide ceramic Al 2 O 3 or silicon carbide SiC or AlSiCu, AlN, LTCC, HTCC, metals (iron alloys), polyethylene plates or glass fabric layers. The layers are preferably applied galvanically, but can also be laminated as films, plasma or cold gas sprayed.

Ein bevorzugtes, jedoch keinesfalls einschränkendes Ausführungsbeispiel für die Erfindung wird nunmehr anhand der Zeichnung näher erläutert. Dabei sind die Merkmale stark schematisiert und nicht maßstäblich dargestellt. Es zeigen A preferred, but by no means limiting embodiment of the invention will now be explained in more detail with reference to the drawing. The features are highly schematic and not drawn to scale. Show it

1 und 2 eine leistungselektronische Schaltung mit planarer Kontaktierungstechnologie. 1 and 2 a power electronic circuit with planar contacting technology.

1 stellt eine erste leistungselektronische Schaltung 100 mit planarer Kontaktierungstechnologie im Querschnitt dar. Die leistungselektronische Schaltung 100 ist dabei auf ein DCB-Substrat 110 aufgebaut. Das DCB-Substrat 110 umfasst eine nicht weiter strukturierte unterseitige Kupferschicht 111 und eine strukturierte oberseitige Kupferschicht 112 auf. Die oberseitige Kupferschicht 112 ist dabei weitgehend entfernt und nur noch an in diesem Beispiel zwei Stellen vorhanden, an denen eine Kontaktierung erfolgt. 1 represents a first power electronic circuit 100 with planar contacting technology in cross-section. The power electronic circuit 100 is on a DCB substrate 110 built up. The DCB substrate 110 includes a non-structured lower-side copper layer 111 and a structured topside copper layer 112 on. The topside copper layer 112 In this case, it is largely removed and there are only two points at which contact is made in this example.

An einer ersten der zwei Stellen ist über eine Lötschicht 130 ein IGBT 131 aufgebracht. Der IGBT 131 wird unterseitig durch die oberseitige Kupferschicht 112 kontaktiert. Die Bereiche zwischen den Kontaktstellen der oberseitigen Kupferschicht 112 sind mit einer auflaminierten, isolierenden Polyimidfolie 120 verfüllt und isoliert. At a first of the two places is over a solder layer 130 an IGBT 131 applied. The IGBT 131 is underside by the topside copper layer 112 contacted. The areas between the contact points of the topside copper layer 112 are with a laminated, insulating polyimide film 120 filled and isolated.

Auf der Oberseite des IGBT 131 ist in der Polyimidfolie 120 ein Fenster zur Durchkontaktierung geschaffen. Auf der Polyimidfolie 120 ist eine Kupferschicht 140 aufgebracht, die eine Kontaktierung des IGBT 131 von oben erlaubt. Die Kupferschicht 140 ist über ein zweites Fenster mit der oberseitigen Kupferschicht 112 verbunden. On top of the IGBT 131 is in the polyimide film 120 created a window for through-connection. On the polyimide film 120 is a copper layer 140 applied, which is a contacting of the IGBT 131 allowed from the top. The copper layer 140 is over a second window with the topside copper layer 112 connected.

Auf der Kupferschicht 140 ist den gesamten Aufbau überdeckend eine weitere elektrisch isolierende Schicht 160 aufgebracht. Auf diese wiederum ist formschlüssig und den gesamten Aufbau bedeckend eine Pufferschicht 160 aus duktilem Material, beispielsweise ein gesprühter Metallschaum aufgebracht. Eine dritte isolierende Schicht 170 bedeckt die Pufferschicht 160. On the copper layer 140 is the entire structure overlapping another electrically insulating layer 160 applied. In turn, this is a form-fitting and the entire structure covering a buffer layer 160 made of ductile material, for example applied a sprayed metal foam. A third insulating layer 170 covers the buffer layer 160 ,

Schließlich wird der gesamte Aufbau abgeschlossen von einer im Vergleich zur Pufferschicht 160 hochreißfesten Metallschicht 180, beispielsweise Eisen bzw. Eisenlegierungen oder Metallverbundwerkstoffe wie Wolframcarbid. Diese Metallschicht 180 überdeckt wiederum den gesamten Aufbau und ist elektrisch durch die isolierenden Schichten 150, 170 von den leistungselektronischen Elementen getrennt. Finally, the entire setup is completed by one compared to the buffer layer 160 highly tear-resistant metal layer 180 For example, iron or iron alloys or metal composites such as tungsten carbide. This metal layer 180 again covers the entire structure and is electrically through the insulating layers 150 . 170 separated from the power electronic elements.

2 zeigt einen sehr ähnlichen Aufbau einer zweiten leistungselektronischen Schaltung 200, bei dem die meisten Elemente mit denen der ersten leistungselektronischen Schaltung 100 übereinstimmen. Im Gegensatz zur ersten leistungselektronischen Schaltung 100 ist auf der Oberseite des IGBT 131 ein Kühlkörper 210 angeordnet. Dieser durchdringt dabei die isolierenden Schichten 150, 170 und die Pufferschicht 160 und stellt somit eine direkte Wärmeleitverbindung zwischen dem IGBT 131 und der Metallschicht 180 her. Dadurch wird ein effizienter Wärmetransport vom IGBT 131 nach außen, beispielsweise zu einer die leistungselektronische Schaltung 200 umgebenden Kühlflüssigkeit her. 2 shows a very similar construction of a second power electronic circuit 200 in which most elements match those of the first power electronic circuit 100 to match. In contrast to the first power electronic circuit 100 is on top of the IGBT 131 a heat sink 210 arranged. This penetrates the insulating layers 150 . 170 and the buffer layer 160 and thus provides a direct heat conduction connection between the IGBT 131 and the metal layer 180 ago. This will provide efficient heat transfer from the IGBT 131 to the outside, for example to a power electronic circuit 200 surrounding coolant.

ZITATE ENTHALTEN IN DER BESCHREIBUNG QUOTES INCLUDE IN THE DESCRIPTION

Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Zitierte PatentliteraturCited patent literature

  • WO 2003/030247 A2 [0009] WO 2003/030247 A2 [0009]

Claims (5)

Leistungselektronische Schaltung (100, 200), umfassend: – ein Substrat (110), – wenigstens ein auf dem Substrat (110) angeordnetes leistungselektronisches Bauelement (131), – eine das Substrat (110) und das leistungselektronische Bauelement (131) in Teilen bedeckende elektrisch isolierende Schicht (120), – wenigstens eine die elektrisch isolierende Schicht (120) wenigstens in Teilen bedeckende Metallschicht (140) zur elektrischen Leitung, – wenigstens ein die Metallschicht (140) formschlüssig zumindest teilweise überdeckender Pufferschichtaufbau (160, 170, 180) zur Pufferung gegen mechanische Ausdehnung, wobei der Pufferschichtaufbau (160, 170, 180) wenigstens eine erste Schicht (160) aus einem duktilen ersten Material und wenigstens eine zweite Schicht (180) aus einem im Vergleich zum duktilen Material hochzug-, hochdruck- und hochreißfestem zweiten Material aufweist. Power electronic circuit ( 100 . 200 ), comprising: a substrate ( 110 ), - at least one on the substrate ( 110 ) arranged power electronic component ( 131 ), - a substrate ( 110 ) and the power electronic component ( 131 ) in parts covering electrically insulating layer ( 120 ), - at least one the electrically insulating layer ( 120 ) at least partially covering metal layer ( 140 ) for electrical conduction, - at least one metal layer ( 140 ) Formally at least partially overlapping buffer layer structure ( 160 . 170 . 180 ) for buffering against mechanical expansion, the buffer layer structure ( 160 . 170 . 180 ) at least a first layer ( 160 ) of a ductile first material and at least a second layer ( 180 ) has a high tensile, high pressure and high tear resistant second material compared to the ductile material. Leistungselektronische Schaltung (100, 200) gemäß Anspruch 1, bei der das erste Material aus den folgenden Materialien ausgewählt ist: – poröses Metall; – Kohlefasern, Kevlar, Aramid; – ein hochreißfester Kunststoff, insbesondere ein Polyethylen mit ultrahohem Molekulargewicht; Power electronic circuit ( 100 . 200 ) according to claim 1, wherein said first material is selected from the following materials: - porous metal; - carbon fibers, kevlar, aramid; A highly tear-resistant plastic, in particular a polyethylene of ultrahigh molecular weight; Leistungselektronische Schaltung (100, 200) gemäß Anspruch 1 oder 2, bei der das zweite Material aus den folgenden Materialien ausgewählt ist: – Keramik; – Polyethylen; – Glasgewebe. Power electronic circuit ( 100 . 200 ) according to claim 1 or 2, wherein the second material is selected from the following materials: - ceramic; - polyethylene; - glass fabric. Leistungselektronische Schaltung (100, 200) gemäß einem der vorangehenden Ansprüche, bei der der Pufferschichtaufbau (160, 170, 180) eine Dicke von wenigstens 10µm aufweist. Power electronic circuit ( 100 . 200 ) according to one of the preceding claims, in which the buffer layer structure ( 160 . 170 . 180 ) has a thickness of at least 10μm. Leistungselektronische Schaltung (100, 200) gemäß einem der vorangehenden Ansprüche, bei der der Pufferschichtaufbau (160, 170, 180) eine Mehrzahl von ersten und zweiten Schichten aufweist, die abwechselnd aufeinander aufgebracht sind. Power electronic circuit ( 100 . 200 ) according to one of the preceding claims, in which the buffer layer structure ( 160 . 170 . 180 ) has a plurality of first and second layers alternately applied to each other.
DE201310215592 2013-08-07 2013-08-07 Power electronic circuit with planar electrical contacting Withdrawn DE102013215592A1 (en)

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