DE102011006354B4 - Maskenrohling, Übertragungsmaske und Verfahren zum Herstellen eines Halbleiterbauelements - Google Patents

Maskenrohling, Übertragungsmaske und Verfahren zum Herstellen eines Halbleiterbauelements Download PDF

Info

Publication number
DE102011006354B4
DE102011006354B4 DE102011006354.4A DE102011006354A DE102011006354B4 DE 102011006354 B4 DE102011006354 B4 DE 102011006354B4 DE 102011006354 A DE102011006354 A DE 102011006354A DE 102011006354 B4 DE102011006354 B4 DE 102011006354B4
Authority
DE
Germany
Prior art keywords
layer
light
shielding layer
pattern
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102011006354.4A
Other languages
German (de)
English (en)
Other versions
DE102011006354A1 (de
Inventor
Osamu Nozawa
Hiroaki Shishido
Toshiyuki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of DE102011006354A1 publication Critical patent/DE102011006354A1/de
Application granted granted Critical
Publication of DE102011006354B4 publication Critical patent/DE102011006354B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
DE102011006354.4A 2010-03-30 2011-03-29 Maskenrohling, Übertragungsmaske und Verfahren zum Herstellen eines Halbleiterbauelements Expired - Fee Related DE102011006354B4 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010-079327 2010-03-30
JP2010079327 2010-03-30
JP2011-037970 2011-02-24
JP2011037970A JP5142340B2 (ja) 2010-03-30 2011-02-24 転写用マスクの製造方法

Publications (2)

Publication Number Publication Date
DE102011006354A1 DE102011006354A1 (de) 2012-01-12
DE102011006354B4 true DE102011006354B4 (de) 2016-11-10

Family

ID=44710070

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102011006354.4A Expired - Fee Related DE102011006354B4 (de) 2010-03-30 2011-03-29 Maskenrohling, Übertragungsmaske und Verfahren zum Herstellen eines Halbleiterbauelements
DE102011122937.3A Expired - Fee Related DE102011122937B3 (de) 2010-03-30 2011-03-29 Verfahren zum Herstellen einer Übertragungsmaske und Verfahren zum Herstellen eines Halbleiterbauelements

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE102011122937.3A Expired - Fee Related DE102011122937B3 (de) 2010-03-30 2011-03-29 Verfahren zum Herstellen einer Übertragungsmaske und Verfahren zum Herstellen eines Halbleiterbauelements

Country Status (5)

Country Link
US (1) US8435704B2 (https=)
JP (3) JP5142340B2 (https=)
KR (1) KR101671052B1 (https=)
DE (2) DE102011006354B4 (https=)
TW (1) TWI514067B (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9091934B2 (en) * 2010-12-24 2015-07-28 Hoya Corporation Mask blank, method of manufacturing the same, transfer mask, and method of manufacturing the same
JP5920965B2 (ja) * 2011-05-20 2016-05-24 Hoya株式会社 マスクブランクの製造方法、転写用マスク用の製造方法、および半導体デバイスの製造方法
US20150111134A1 (en) * 2012-03-14 2015-04-23 Hoya Corporation Mask blank and method of manufacturing a transfer mask
US20150079502A1 (en) * 2012-03-14 2015-03-19 Hoya Corporation Mask blank and method of manufacturing a transfer mask
US8974988B2 (en) * 2012-04-20 2015-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Mask and method for forming the same
JP5670502B2 (ja) * 2012-04-30 2015-02-18 株式会社エスアンドエス テック 位相反転ブランクマスク及びその製造方法
KR101269062B1 (ko) 2012-06-29 2013-05-29 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토 마스크 제조방법
JP6394496B2 (ja) * 2014-07-15 2018-09-26 信越化学工業株式会社 バイナリフォトマスクブランク、その製造方法、及びバイナリフォトマスクの製造方法
JP6544964B2 (ja) * 2015-03-31 2019-07-17 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び、半導体デバイスの製造方法
JP6370255B2 (ja) * 2015-04-07 2018-08-08 信越化学工業株式会社 ペリクル用フレーム及びそれを用いたペリクル
DE102016203442A1 (de) 2016-03-02 2017-09-07 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage und Verfahren zum Vermessen eines Projektionsobjektives
JP7009746B2 (ja) * 2017-02-15 2022-01-26 大日本印刷株式会社 Ｈａｚｅの除去方法、及びフォトマスクの製造方法
JP6833773B2 (ja) * 2018-08-30 2021-02-24 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法
CN113311660B (zh) * 2021-06-03 2023-07-18 上海传芯半导体有限公司 掩模基版的制作方法及具有等离子体加热装置的涂胶设备
WO2025142825A1 (ja) * 2023-12-27 2025-07-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
WO2025142703A1 (ja) * 2023-12-27 2025-07-03 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
CN119065196A (zh) * 2024-08-12 2024-12-03 上海华力集成电路制造有限公司 解决光罩表面遮光材料析出的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090226826A1 (en) * 2008-02-27 2009-09-10 Hoya Corporation Photomask blank, photomask, and photomask manufacturing method

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57161857A (en) 1981-03-31 1982-10-05 Dainippon Printing Co Ltd Photomask blank plate
JP3474274B2 (ja) * 1994-09-08 2003-12-08 株式会社東芝 サーマルヘッド
JPH09146259A (ja) * 1995-08-29 1997-06-06 Ricoh Opt Ind Co Ltd グラデーションマスクとその製造方法およびグラデーションマスクを用いた特殊表面形状の創成方法
JP2001083687A (ja) 1999-09-09 2001-03-30 Dainippon Printing Co Ltd ハーフトーン位相シフトフォトマスク及びこれを作製するためのハーフトーン位相シフトフォトマスク用ブランクス
JP4686006B2 (ja) * 2000-04-27 2011-05-18 大日本印刷株式会社 ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法
JP3722029B2 (ja) * 2000-09-12 2005-11-30 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法、及び位相シフトマスクの製造方法
JP2002196473A (ja) * 2000-12-22 2002-07-12 Dainippon Printing Co Ltd フォトマスク
DE10223113B4 (de) 2002-05-21 2007-09-13 Infineon Technologies Ag Verfahren zur Herstellung einer photolithographischen Maske
JP2005208660A (ja) * 2004-01-22 2005-08-04 Schott Ag 超高透過率の位相シフト型のマスクブランク
JP4407815B2 (ja) * 2004-09-10 2010-02-03 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP2006078825A (ja) 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
CN100595671C (zh) * 2004-11-08 2010-03-24 Hoya株式会社 掩模坯件的制造方法
KR100617389B1 (ko) * 2005-05-16 2006-08-31 주식회사 피케이엘 헤이즈 방지를 위한 위상편이 마스크
EP1746460B1 (en) * 2005-07-21 2011-04-06 Shin-Etsu Chemical Co., Ltd. Photomask blank, photomask and fabrication method thereof
JP4883278B2 (ja) 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
JP5009590B2 (ja) 2006-11-01 2012-08-22 Ｈｏｙａ株式会社 マスクブランクの製造方法及びマスクの製造方法
JP4958149B2 (ja) * 2006-11-01 2012-06-20 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法
JP4346656B2 (ja) * 2007-05-28 2009-10-21 Ｈｏｙａ株式会社 反射型マスクブランク及び反射型マスク
JP5053030B2 (ja) * 2007-10-16 2012-10-17 大日本印刷株式会社 フォトマスクの欠陥修正方法、製造方法および欠陥修正装置
JP4465405B2 (ja) 2008-02-27 2010-05-19 Ｈｏｙａ株式会社 フォトマスクブランクおよびフォトマスク並びにこれらの製造方法
CN101978468B (zh) * 2008-03-18 2013-03-20 旭硝子株式会社 Euv光刻用反射型掩模基板及其制造方法
JP5345333B2 (ja) * 2008-03-31 2013-11-20 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びその製造方法
US20110096595A1 (en) * 2008-06-20 2011-04-28 Masayuki Terai Semiconductor memory device and operation method thereof
JP2010192503A (ja) 2009-02-16 2010-09-02 Seiko Epson Corp フォトマスクおよびフォトマスクの製造方法
JP5714266B2 (ja) 2009-08-25 2015-05-07 Hoya株式会社 マスクブランク、転写用マスクおよびこれらの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090226826A1 (en) * 2008-02-27 2009-09-10 Hoya Corporation Photomask blank, photomask, and photomask manufacturing method

Also Published As

Publication number Publication date
DE102011122937B3 (de) 2016-11-24
JP5142340B2 (ja) 2013-02-13
US20110244373A1 (en) 2011-10-06
DE102011006354A1 (de) 2012-01-12
US8435704B2 (en) 2013-05-07
JP5726814B2 (ja) 2015-06-03
JP5872721B2 (ja) 2016-03-01
TW201207553A (en) 2012-02-16
JP2015121827A (ja) 2015-07-02
TWI514067B (zh) 2015-12-21
JP2011227461A (ja) 2011-11-10
KR20130102512A (ko) 2013-09-17
KR101671052B1 (ko) 2016-10-31
JP2012190048A (ja) 2012-10-04

Similar Documents

Publication Publication Date Title
DE102011006354B4 (de) Maskenrohling, Übertragungsmaske und Verfahren zum Herstellen eines Halbleiterbauelements
DE112004000235B4 (de) Fotomasken-Rohling, Fotomaske und Muster-Übertragungsverfahren unter Verwendung einer Fotomaske
DE10307518B4 (de) Halbtonphasenschiebermaskenrohling, Halbtonphasenschiebermaske und Verfahren zu deren Herstellung
DE102013104390B4 (de) Verfahren für die Herstellung einer Lithografiemaske
DE112009000965B4 (de) Reflektive Maske und Verfahren zum Herstellen einer reflektiven Maske
DE102004013459B4 (de) Verfahren zur Herstellung einer reflektierenden Maske und Verfahren zur Herstellung eines Halbleiterbauelements
DE102009010855A1 (de) Fotomaskenrohling, Fotomaske und Verfahren zum Herstellen einer Fotomaske
DE112009002348T5 (de) Fotomaskenrohling, Fotomaske, Verfahren zu deren Herstellung und Verfahren zur Herstellung eines Halbleiterbauelements
DE102009060677A1 (de) Fertigungsverfahren für Photomaskenrohling und Fertigungsverfahren für Photomaske
DE102005029499A1 (de) Lithographische Maske und Herstellungsverfahren hierfür
DE10156366B4 (de) Reflexionsmaske und Verfahren zur Herstellung der Reflexionsmaske
DE10393095T5 (de) Lithografiemaskenrohling
DE10223113A1 (de) Photolithographische Maske und Verfahren zu deren Herstellung
US9140980B2 (en) Method of manufacturing a transfer mask and method of manufacturing a semiconductor device
US20150111134A1 (en) Mask blank and method of manufacturing a transfer mask
DE102022114292A1 (de) Rohmaske und fotomaske unter verwendung dieser rohmaske
DE102009053586A1 (de) Photomaskenrohling, Herstellungsverfahren für Photomaskenrohling und Herstellungsverfahren für Photomaske
DE102022110181A1 (de) Fotoleermaske und fotomaske mit dieser maske
DE10206143B4 (de) Reflektierender Maskenrohling und reflektierende Maske für EUV-Belichtung und Verfahren zum Herstellen der Maske
DE10349087A1 (de) Verfahren zur Herstellung von Halbton-Phasenverschiebungsmasken-Rohlingen
US20110217635A1 (en) Method of manufacturing transfer mask and method of manufacturing semiconductor device
DE10393131B4 (de) Verfahren zum Herstellen von Maskenrohlingen
DE102009046878A1 (de) Verringerung der lonenwanderung von Absorbermaterialien von Lithographiemasken durch Chrompassivierung
DE10028644A1 (de) Phasenschiebermaske und Phasenschiebermaskenrohling
DE102022122490A1 (de) Extrem-ultraviolett-maske mit capping-schicht

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: G03F0001080000

Ipc: G03F0001500000

Effective date: 20111214

R016 Response to examination communication
R130 Divisional application to

Ref document number: 102011122937

Country of ref document: DE

R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee