DE102008030819A1 - Optoelektronische Vorrichtung - Google Patents

Optoelektronische Vorrichtung Download PDF

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Publication number
DE102008030819A1
DE102008030819A1 DE102008030819A DE102008030819A DE102008030819A1 DE 102008030819 A1 DE102008030819 A1 DE 102008030819A1 DE 102008030819 A DE102008030819 A DE 102008030819A DE 102008030819 A DE102008030819 A DE 102008030819A DE 102008030819 A1 DE102008030819 A1 DE 102008030819A1
Authority
DE
Germany
Prior art keywords
optical
radiation
semiconductor chip
optoelectronic device
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102008030819A
Other languages
German (de)
English (en)
Inventor
Peter Dr. Brick
Julius Muschaweck
Joachim Dr. Frank
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102008030819A priority Critical patent/DE102008030819A1/de
Priority to EP09772002.3A priority patent/EP2294632B1/de
Priority to KR1020117002206A priority patent/KR20110052588A/ko
Priority to CN200980125121.6A priority patent/CN102077365B/zh
Priority to PCT/DE2009/000882 priority patent/WO2010000232A1/de
Priority to US12/997,386 priority patent/US8686452B2/en
Priority to JP2011515095A priority patent/JP5746023B2/ja
Publication of DE102008030819A1 publication Critical patent/DE102008030819A1/de
Priority to US14/177,591 priority patent/US9046673B2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0028—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed refractive and reflective surfaces, e.g. non-imaging catadioptric systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G01J1/0411—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using focussing or collimating elements, i.e. lenses or mirrors; Aberration correction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G01J1/0422—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using light concentrators, collectors or condensers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/488—Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)
  • Photovoltaic Devices (AREA)
DE102008030819A 2008-06-30 2008-06-30 Optoelektronische Vorrichtung Withdrawn DE102008030819A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102008030819A DE102008030819A1 (de) 2008-06-30 2008-06-30 Optoelektronische Vorrichtung
EP09772002.3A EP2294632B1 (de) 2008-06-30 2009-06-25 Optoelektronische vorrichtung zur reduzierung von abschattungseffekten der elektroden durch konzentratoren
KR1020117002206A KR20110052588A (ko) 2008-06-30 2009-06-25 전극의 차폐 효과를 집광기에 의해 감소시키기 위한 광전 장치
CN200980125121.6A CN102077365B (zh) 2008-06-30 2009-06-25 通过聚光器减小电极的遮挡效果的光电子装置
PCT/DE2009/000882 WO2010000232A1 (de) 2008-06-30 2009-06-25 Optoelektronische vorrichtung zur reduzierung von abschattungseffekten der elektroden durch konzentratoren
US12/997,386 US8686452B2 (en) 2008-06-30 2009-06-25 Optoelectronic apparatus
JP2011515095A JP5746023B2 (ja) 2008-06-30 2009-06-25 集光器による電極の遮蔽効果を低減するためのオプトエレクトロニクス装置
US14/177,591 US9046673B2 (en) 2008-06-30 2014-02-11 Optoelectronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008030819A DE102008030819A1 (de) 2008-06-30 2008-06-30 Optoelektronische Vorrichtung

Publications (1)

Publication Number Publication Date
DE102008030819A1 true DE102008030819A1 (de) 2009-12-31

Family

ID=41226932

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008030819A Withdrawn DE102008030819A1 (de) 2008-06-30 2008-06-30 Optoelektronische Vorrichtung

Country Status (7)

Country Link
US (2) US8686452B2 (https=)
EP (1) EP2294632B1 (https=)
JP (1) JP5746023B2 (https=)
KR (1) KR20110052588A (https=)
CN (1) CN102077365B (https=)
DE (1) DE102008030819A1 (https=)
WO (1) WO2010000232A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011135508A3 (en) * 2010-04-26 2011-12-22 Koninklijke Philips Electronics N.V. Lighting system including colllimators aligned with light emitting segments
CN115598816A (zh) * 2022-12-07 2023-01-13 昆明理工大学（Cn） 一种面体分离的非成像聚光器及其数学模型的构建方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101327211B1 (ko) * 2011-06-03 2013-11-11 주식회사 리온아이피엘 고집광형 태양전지모듈
WO2013031570A1 (ja) * 2011-08-30 2013-03-07 国立大学法人東京大学 太陽電池用集光装置及びこれを用いた発電装置
CN103280468B (zh) * 2013-06-04 2016-08-24 中山大学 一种背面钝化晶体硅太阳电池的背电极结构及所用网版

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001048830A1 (en) * 1999-12-24 2001-07-05 Koninklijke Philips Electronics N.V. ELECTRO-OPTICAL DEVICE HAVING AN ITO LAYER, A SiN LAYER AND AN INTERMEDIATE SILICON OXIDE LAYER
DE20021916U1 (de) * 1999-12-22 2004-07-22 Epigap Optoelektronik Gmbh Bipolare Beleuchtungsquelle aus einem einseitig kontaktierten, selbstbündelnden Halbleiterkörper
DE10319274A1 (de) * 2003-04-29 2004-12-02 Osram Opto Semiconductors Gmbh Lichtquelle
EP1605199A2 (en) * 2004-06-04 2005-12-14 LumiLeds Lighting U.S., LLC Remote wavelength conversion in an illumination device
DE102005033005A1 (de) 2005-07-14 2007-01-18 Osram Opto Semiconductors Gmbh Optoelektronischer Chip
DE102005044580A1 (de) * 2005-09-17 2007-04-05 Carl Zeiss Jena Gmbh Anordnung zur Beleuchtung eines Feldes
WO2007063489A1 (en) * 2005-12-02 2007-06-07 Koninklijke Philips Electronics N.V. Light emitting diode module
DE102006045692A1 (de) * 2006-09-27 2008-04-03 Osram Opto Semiconductors Gmbh Optisches Projektionsgerät

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US4248643A (en) * 1979-11-19 1981-02-03 Walter Todd Peters Solar energy conversion panel
JPH0671093B2 (ja) * 1985-04-19 1994-09-07 株式会社日立製作所 光発電素子
US4638110A (en) * 1985-06-13 1987-01-20 Illuminated Data, Inc. Methods and apparatus relating to photovoltaic semiconductor devices
US4711972A (en) 1985-07-05 1987-12-08 Entech, Inc. Photovoltaic cell cover for use with a primary optical concentrator in a solar energy collector
DE3741477A1 (de) * 1987-12-08 1989-06-22 Fraunhofer Ges Forschung Konzentratoranordnung
US5091018A (en) * 1989-04-17 1992-02-25 The Boeing Company Tandem photovoltaic solar cell with III-V diffused junction booster cell
US5123968A (en) * 1989-04-17 1992-06-23 The Boeing Company Tandem photovoltaic solar cell with III-V diffused junction booster cell
US5344497A (en) * 1993-04-19 1994-09-06 Fraas Lewis M Line-focus photovoltaic module using stacked tandem-cells
US5959787A (en) * 1995-06-06 1999-09-28 The Boeing Company Concentrating coverglass for photovoltaic cells
US6057505A (en) * 1997-11-21 2000-05-02 Ortabasi; Ugur Space concentrator for advanced solar cells
US6091017A (en) * 1999-08-23 2000-07-18 Composite Optics Incorporated Solar concentrator array
JP2004047753A (ja) 2002-07-12 2004-02-12 Bridgestone Corp 集光素子付き太陽電池
GB0227718D0 (en) 2002-11-28 2003-01-08 Eastman Kodak Co A photovoltaic device and a manufacturing method hereof
US20050081908A1 (en) * 2003-03-19 2005-04-21 Stewart Roger G. Method and apparatus for generation of electrical power from solar energy
US7360936B2 (en) * 2003-06-10 2008-04-22 Abu-Ageel Nayef M Method and system of LED light extraction using optical elements
US20060185713A1 (en) * 2005-02-23 2006-08-24 Mook William J Jr Solar panels with liquid superconcentrators exhibiting wide fields of view
DE102005018336A1 (de) * 2005-02-28 2006-08-31 Osram Opto Semiconductors Gmbh Lichtleiter
DE102005019375A1 (de) * 2005-02-28 2006-09-07 Osram Opto Semiconductors Gmbh LED-Array
DE102005042066A1 (de) * 2005-09-03 2007-03-15 Osram Opto Semiconductors Gmbh Hinterleuchtungsanordnung mit in Leuchtgruppen angeordneten Halbleiterlichtquellen

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE20021916U1 (de) * 1999-12-22 2004-07-22 Epigap Optoelektronik Gmbh Bipolare Beleuchtungsquelle aus einem einseitig kontaktierten, selbstbündelnden Halbleiterkörper
WO2001048830A1 (en) * 1999-12-24 2001-07-05 Koninklijke Philips Electronics N.V. ELECTRO-OPTICAL DEVICE HAVING AN ITO LAYER, A SiN LAYER AND AN INTERMEDIATE SILICON OXIDE LAYER
DE10319274A1 (de) * 2003-04-29 2004-12-02 Osram Opto Semiconductors Gmbh Lichtquelle
EP1605199A2 (en) * 2004-06-04 2005-12-14 LumiLeds Lighting U.S., LLC Remote wavelength conversion in an illumination device
DE102005033005A1 (de) 2005-07-14 2007-01-18 Osram Opto Semiconductors Gmbh Optoelektronischer Chip
DE102005044580A1 (de) * 2005-09-17 2007-04-05 Carl Zeiss Jena Gmbh Anordnung zur Beleuchtung eines Feldes
WO2007063489A1 (en) * 2005-12-02 2007-06-07 Koninklijke Philips Electronics N.V. Light emitting diode module
DE102006045692A1 (de) * 2006-09-27 2008-04-03 Osram Opto Semiconductors Gmbh Optisches Projektionsgerät

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011135508A3 (en) * 2010-04-26 2011-12-22 Koninklijke Philips Electronics N.V. Lighting system including colllimators aligned with light emitting segments
US8269235B2 (en) 2010-04-26 2012-09-18 Koninklijke Philips Electronics N.V. Lighting system including collimators aligned with light emitting segments
CN115598816A (zh) * 2022-12-07 2023-01-13 昆明理工大学（Cn） 一种面体分离的非成像聚光器及其数学模型的构建方法

Also Published As

Publication number Publication date
CN102077365A (zh) 2011-05-25
CN102077365B (zh) 2014-04-09
JP5746023B2 (ja) 2015-07-08
US20140158875A1 (en) 2014-06-12
US9046673B2 (en) 2015-06-02
WO2010000232A1 (de) 2010-01-07
EP2294632A1 (de) 2011-03-16
US8686452B2 (en) 2014-04-01
US20110089459A1 (en) 2011-04-21
JP2011526419A (ja) 2011-10-06
KR20110052588A (ko) 2011-05-18
EP2294632B1 (de) 2020-12-02

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Effective date: 20150505

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee