DE102007024160B4 - The power semiconductor module - Google Patents

The power semiconductor module Download PDF

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Publication number
DE102007024160B4
DE102007024160B4 DE102007024160A DE102007024160A DE102007024160B4 DE 102007024160 B4 DE102007024160 B4 DE 102007024160B4 DE 102007024160 A DE102007024160 A DE 102007024160A DE 102007024160 A DE102007024160 A DE 102007024160A DE 102007024160 B4 DE102007024160 B4 DE 102007024160B4
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power semiconductor
elements
bonding
substrate
pressure
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DE102007024160A
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German (de)
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DE102007024160A1 (en
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Marco Lederer
Lars Reusser
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Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
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Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/71—Coupling devices for rigid printing circuits or like structures
    • H01R12/712—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit
    • H01R12/714—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit with contacts abutting directly the printed circuit; Button contacts therefore provided on the printed circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/50—Fixed connections
    • H01R12/51—Fixed connections for rigid printed circuits or like structures
    • H01R12/52—Fixed connections for rigid printed circuits or like structures connecting to other rigid printed circuits or like structures

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Leistungshalbleitermodul (10) mit einem Substrat (12) und einem Gehäuse (14), wobei das Substrat (12) eine Metallstruktur (20) zur Ausbildung von Leiterbahnen und mit diesen mittels Bondverbindungselementen (24) kontaktierte Leistungshalbleiterchips (22) und das Gehäuse (14) Durchgangskanäle (26) für Druckkontakt-Federelemente (28) aufweist, die Druckkontakt-Federelemente (28) den elektrischen Strom in und aus das Modul führen und direkt und unmittelbar entweder an den Kontaktstellen (32) der Bondverbindungselemente (24) mit den Leistungshalbleiterchips (22) und/oder an den Kontaktstellen (32) der Bondverbindungselemente (24) mit den Leiterbahnen (20) mit den Bondverbindungselementen (24) der Leistungshalbleiterchips (22) kontaktiert sind.Power semiconductor module (10) with a substrate (12) and a housing (14), the substrate (12) having a metal structure (20) for the formation of conductor tracks and power semiconductor chips (22) contacted with these by means of bonding connection elements (24) and the housing (14) ) Has through channels (26) for pressure contact spring elements (28), the pressure contact spring elements (28) conduct the electrical current in and out of the module and directly and directly either at the contact points (32) of the bonding elements (24) with the power semiconductor chips ( 22) and / or at the contact points (32) of the bond connection elements (24) with the conductor tracks (20) with the bond connection elements (24) of the power semiconductor chips (22).

Description

Die Erfindung betrifft ein Leistungshalbleitermodul mit einem Substrat und einem Gehäuse, wobei das Substrat eine Metallstruktur zur Ausbildung von Leiterbahnen und mit dieser mittels Bondverbindungselementen kontaktierte Leistungshalbleiterchips und das Gehäuse Durchgangskanäle für Druckkontakt-Federelemente aufweist. Bei dem Substrat handelt es sich vorzugsweise um ein DCB-Substrat (Direct Copper Bonding-Substrate).The invention relates to a power semiconductor module having a substrate and a housing, wherein the substrate has a metal structure for forming conductor tracks and power semiconductor chips contacted thereto by means of bond connection elements, and the housing has through-channels for pressure-contact spring elements. The substrate is preferably a DCB substrate (direct copper bonding substrates).

Ein derartiges Leistungshalbleitermodul ist beispielsweise aus der DE 196 30 173 C2 der Anmelderin bekannt.Such a power semiconductor module is for example from the DE 196 30 173 C2 the applicant known.

Ein dem Leistungshalbleitermodul gemäß der DE 196 30 173 C2 ähnliches Leistungshalbleitermodul offenbart die DE 10 2004 031 623 A1 . Auch bei diesem Leistungshalbleitermodul sind Druckkontakt-Federelemente vorgesehen, welche zwischen einem mit Leistungshalbleiterchips bestückten und mit Bondverbindungselementen versehenen Substrat und einer äußeren Schaltungsplatine eine elektrische Verbindung herstellen. Bei diesem bekannten Leistungshalbleitermodul ist jedoch zwischen dem jeweiligen Druckkontakt-Federelement und dem zugehörigen Bondverbindungselement ein Metallplättchen oder eine Bondfläche vorgesehen. Der Grundflächenbedarf an dem Substrat ist bei diesem bekannten Leistungshalbleitermodul folglich wenigstens gleich groß wie bei dem aus der oben zitierten DE 196 30 173 C2 bekannten Leistungshalbleitermodul.A power semiconductor module according to DE 196 30 173 C2 Similar power semiconductor module discloses the DE 10 2004 031 623 A1 , Also in this power semiconductor module, pressure-contact spring elements are provided which produce an electrical connection between a substrate equipped with power semiconductor chips and provided with bonding connection elements and an external circuit board. In this known power semiconductor module, however, a metal plate or a bonding surface is provided between the respective pressure-contact spring element and the associated bonding connection element. The footprint requirement on the substrate is therefore at least the same in this known power semiconductor module as in that of the above-cited DE 196 30 173 C2 known power semiconductor module.

Aus der DE 10 2004 051 039 A1 ist ein Leistungshalbleitermodul mit einer Druckkontakteinrichtung bekannt. Dort sind anstelle von Druckkontakt-Federelementen Verbindungselemente vorgesehen, die zur elektrischen Verbindung der Leiterbahnen des Substrates mit externen Zuleitungen dienen. Bei den in dieser Druckschrift offenbarten, als Stempel ausgebildeten Druckkontakteinrichtungen handelt es sich um mechanisch wirkende Druckelemente und nicht um elektrische Druckkontakt-Federelemente, die mit zugehörigen Kontaktabschnitten des Substrates elektrisch leitend kontaktiert wären, um elektrischen Strom aus dem Leistungshalbleitermodul heraus- bzw. in dieses hineinzuführen.From the DE 10 2004 051 039 A1 a power semiconductor module with a pressure contact device is known. There, instead of pressure-contact spring elements connecting elements are provided which are used for electrical connection of the tracks of the substrate with external leads. In the publication disclosed in this document, designed as a stamp pressure contact devices are mechanically acting pressure elements and not electrical pressure-contact spring elements, which would be contacted with associated contact portions of the substrate electrically conductive to electrical power out of the power semiconductor module or into this ,

Bei bekannten Leistungshalbleitermodulen sind die Druckkontakt-Federelemente mit zugehörigen Kontaktabschnitten der Leiterbahnen des Substrates kontaktiert, um elektrischen Strom aus dem Modul bzw. in das Modul zu führen. Durch diese Federkontaktflächen bildenden Kontaktabschnitte der Leiterbahnen wird auf dem Substrat wertvoller Platz verbraucht. Das wirkt sich auf die Leistungsdichte des Substrates entsprechend aus.In known power semiconductor modules, the pressure-contact spring elements are contacted with associated contact portions of the conductor tracks of the substrate in order to conduct electrical current out of the module or into the module. Through these spring contact surfaces forming contact portions of the tracks is consumed valuable space on the substrate. This affects the power density of the substrate accordingly.

In Kenntnis dieser Gegebenheiten liegt der Erfindung die Aufgabe zugrunde, ein Leistungshalbleitermodul der eingangs genannten Art zu schaffen, das einfach ausgebildet auf dem Substrat eine erhöhte Leistungsdichte ermöglicht.In view of these circumstances, the invention has for its object to provide a power semiconductor module of the type mentioned, which allows easily formed on the substrate increased power density.

Diese Aufgabe wird erfindungsgemäß durch die Merkmale des Anspruches 1 gelöst. Erfindungsgemäß sind die Druckkontakt-Federelemente direkt und unmittelbar mit den Bondverbindungselementen der Leistungshalbleiterchips kontaktiert.This object is achieved by the features of claim 1. According to the invention, the pressure-contact spring elements are contacted directly and directly with the bond connection elements of the power semiconductor chips.

Bei dem erfindungsgemäßen Leistungshalbleitermodul sind eigene Federkontaktflächen der Leiterbahnen bildenden Metallstruktur auf dem Substrat teilweise entbehrlich; die entsprechenden Kontakt-Federelemente sind direkt, d. h. unmittelbar mit den Bondverbindungselementen der Leistungshalbleiterchips kontaktiert. Es sind üblicherweise noch weitere Federkontaktflächen vorhanden, die zu unter- d. h. rückseitigen Kontaktflächen der Leistungshalbleiterchips führen.In the power semiconductor module according to the invention own spring contact surfaces of the conductor tracks forming metal structure on the substrate are partially dispensable; the corresponding contact spring elements are direct, d. H. contacted directly with the bonding elements of the power semiconductor chips. There are usually other spring contact surfaces available to d. H. lead back contact surfaces of the power semiconductor chips.

Bei gleichen Außenabmessungen des Substrates ergibt sich folglich eine Erhöhung der Leistungsdichte auf dem Substrat.With the same outer dimensions of the substrate, there is consequently an increase in the power density on the substrate.

Erfindungsgemäß sind die Druckkontakt-Federelemente an den Kontaktstellen der Bondverbindungselemente mit den Leistungshalbleiterchips und/oder an den Kontaktstellen der Bondverbindungselemente mit den Leiterbahnen kontaktiert.According to the invention, the pressure-contact spring elements are contacted at the contact points of the bond connection elements with the power semiconductor chips and / or at the contact points of the bond connection elements with the conductor tracks.

Die Bondverbindungselemente sind vorzugsweise von Bondbändchen gebildet, wie sie beispielsweise aus der WO 2004/100258 A2 bekannt sind. Desgleichen wäre es möglich, die Bondverbindungselemente durch Bonddrähtchen zu realisieren, die eng nebeneinander zueinander parallel angeordnet sind.The bond connection elements are preferably formed by bonding tapes, as for example from the WO 2004/100258 A2 are known. Likewise, it would be possible to realize the bonding elements by bonding wires, which are arranged closely adjacent to each other in parallel.

Eine zuverlässige und mögliche Herstellungstoleranzen eliminierende Ausbildung ergibt sich, wenn die Druckkontakt-Federelemente eine Breitenabmessung besitzen, die geringfügig größer ist als die Breitenabmessung der Bondverbindungselemente.A reliable and possible manufacturing tolerances eliminating training results when the pressure-contact spring elements have a width dimension which is slightly larger than the width dimension of the bonding elements.

Weitere Einzelheiten ergeben sich aus der nachfolgenden Beschreibung von in der Zeichnung dargestellter wesentlicher Einzelheiten des erfindungsgemäßen Leistungshalbleitermodus.Further details emerge from the following description of essential details of the power semiconductor mode according to the invention shown in the drawing.

Es zeigen:Show it:

1 eine Stirnansicht eines Abschnittes des Leistungshalbleitermoduls, dessen Gehäuse mit dünnen Linien abschnittweise längsgeschnitten dargestellt ist, und 1 an end view of a portion of the power semiconductor module, the housing is shown with thin lines in sections, longitudinally sectioned, and

2 perspektivisch einen Abschnitt des Substrates und eine Anzahl Druckkontakt-Federelemente. 2 in perspective, a portion of the substrate and a number of pressure-contact spring elements.

1 verdeutlicht in einem vergrößerten Maßstab abschnittweise eine Ausbildung des Leistungshalbleitermoduls 10 mit einem Substrat 12 und einem Gehäuse 14. Das vorzugsweise als DCB-Substrat ausgebildete Substrat 12 weist einen elektrisch isolierenden Grundkörper 16 aus einem gesinterten Keramikmaterial auf. An der Unterseite des Grundkörpers 16 ist festhaftend eine Metallschicht 18 vorgesehen, die zur Wärmeableitung des Leistungshalbleitermoduls 10 in einen (nicht dargestellten) Kühlkörper vorgesehen ist. 1 illustrates in an enlarged scale sections of an embodiment of the power semiconductor module 10 with a substrate 12 and a housing 14 , The preferably formed as a DCB substrate substrate 12 has an electrically insulating body 16 from a sintered ceramic material. At the bottom of the body 16 is firmly adhering a metal layer 18 provided for the heat dissipation of the power semiconductor module 10 is provided in a (not shown) heat sink.

Auf der Oberseite des elektrisch isolierenden Grundkörpers 16 ist eine Leiterbahnen bildende Metallstruktur 20 vorgesehen, die mit Leistungshalbleiterchips 22 kombiniert ist. Die Leistungshalbleiterchips 22 und die Metallstruktur 20 sind miteinander mittels Bondverbindungselementen 24 (siehe auch 2) kontaktiert.On top of the electrically insulating body 16 is a conductor-forming metal structure 20 provided with power semiconductor chips 22 combined. The power semiconductor chips 22 and the metal structure 20 are connected to each other by means of bonding elements 24 (see also 2 ) contacted.

Das Gehäuse 14 des Leistungshalbleitermoduls 10 ist mit Durchgangskanälen 26 ausgebildet, die für Druckkontakt-Federelemente 28 vorgesehen sind. Die Druckkontakt-Federelemente 28 sind mit ihren unterseitigen Endabschnitten 30 direkt und unmittelbar mit den Bondverbindungselementen 24 kontaktiert, d. h. die besagten unterseitigen Endabschnitte 30 der Druckkontakt-Federelemente 28 sind an den Kontaktstellen 32 der Bondverbindungselemente 24 mit den Leistungshalbleiterchips 22 kontaktiert. Desgleichen ist es möglich, dass die Druckkontakt-Federelemente 28 an Kontaktstellen der Bondverbindungselemente 24 mit der Leiterbahnen bildenden Metallstruktur 20 kontaktiert sind.The housing 14 of the power semiconductor module 10 is with through channels 26 designed for pressure-contact spring elements 28 are provided. The pressure contact spring elements 28 are with their lower-side end sections 30 directly and immediately with the bonding elements 24 contacted, ie, the said lower-side end portions 30 the pressure contact spring elements 28 are at the contact points 32 the bonding elements 24 with the power semiconductor chips 22 contacted. Likewise, it is possible that the pressure-contact spring elements 28 at contact points of the bonding elements 24 with the conductor tracks forming metal structure 20 are contacted.

Die von den unterseitigen Endabschnitten 30 abgewandten oberseitigen Endabschnitte 34 der Druckkontakt-Federelemente 28 stehen aus der Oberseite 36 des Gehäuses 14 definiert geringfügig über, sie sind zur Kontaktierung mit einer (nicht dargestellten) Schaltungsplatine vorgesehen.The from the lower end sections 30 facing away from the upper end portions 34 the pressure contact spring elements 28 stand out of the top 36 of the housing 14 slightly above, they are intended for contacting a circuit board (not shown).

Bezüglich eines Druckkörpers zur Druckkontaktierung wird beispielhaft auf die eingangs zitierte DE 196 30 173 C2 verwiesen.With respect to a pressure body for pressure contact is exemplified in the beginning cited DE 196 30 173 C2 directed.

Wie aus 2 ersichtlich ist, sind die Bondverbindungselemente 24 vorzugsweise von Bondbändchen 38 gebildet. Aus 2 ist außerdem ersichtlich, dass die Druckkontakt-Federelemente 28 eine Breitenabmessung besitzen, die geringfügig größer ist als die Breitenabmessung der vorzugsweise vom Bondbändchen 38 gebildeten Bondverbindungselemente 24..How out 2 can be seen, are the bonding elements 24 preferably from bonding tapes 38 educated. Out 2 is also apparent that the pressure-contact spring elements 28 have a width dimension that is slightly larger than the width dimension of preferably the bonding tape 38 formed bonding elements 24 ..

BezugszeichenlisteLIST OF REFERENCE NUMBERS

1010
LeistungshalbleitermodulThe power semiconductor module
1212
Substrat (von 10)Substrate (from 10 )
1414
Gehäuse (von 10 für 12)Housing (from 10 For 12 )
1616
Grundkörper (von 12)Basic body (from 12 )
1818
Metallschicht (an 16)Metal layer (on 16 )
2020
Metallstruktur (an 16 für 22)Metal structure (an 16 For 22 )
2222
Leistungshalbleiterchips (an 20)Power semiconductor chips (at 20 )
2424
Bondverbindungselemente (von 10)Bond connection elements (from 10 )
2626
Durchgangskanäle (in 14 für 28)Through channels (in 14 For 28 )
2828
Druckkontakt-Federelemente (in 26)Pressure contact spring elements (in 26 )
3030
unterseitiger Endabschnitt (von 28)lower end section (from 28 )
3232
Kontaktstellen (zwischen 30 und 24)Contact points (between 30 and 24 )
3434
oberseitiger Endabschnitt (von 28)upper end portion (from 28 )
3636
Oberseite (von 14)Top (from 14 )
3838
Bondbändchen (von 24)Bond Ribbon (from 24 )

Claims (3)

Leistungshalbleitermodul (10) mit einem Substrat (12) und einem Gehäuse (14), wobei das Substrat (12) eine Metallstruktur (20) zur Ausbildung von Leiterbahnen und mit diesen mittels Bondverbindungselementen (24) kontaktierte Leistungshalbleiterchips (22) und das Gehäuse (14) Durchgangskanäle (26) für Druckkontakt-Federelemente (28) aufweist, die Druckkontakt-Federelemente (28) den elektrischen Strom in und aus das Modul führen und direkt und unmittelbar entweder an den Kontaktstellen (32) der Bondverbindungselemente (24) mit den Leistungshalbleiterchips (22) und/oder an den Kontaktstellen (32) der Bondverbindungselemente (24) mit den Leiterbahnen (20) mit den Bondverbindungselementen (24) der Leistungshalbleiterchips (22) kontaktiert sind.Power semiconductor module ( 10 ) with a substrate ( 12 ) and a housing ( 14 ), the substrate ( 12 ) a metal structure ( 20 ) for the formation of printed conductors and with these by means of bonding elements ( 24 ) contacted power semiconductor chips ( 22 ) and the housing ( 14 ) Passageways ( 26 ) for pressure-contact spring elements ( 28 ), the pressure-contact spring elements ( 28 ) carry the electrical current in and out of the module and directly and immediately either at the contact points ( 32 ) of the bonding elements ( 24 ) with the power semiconductor chips ( 22 ) and / or at the contact points ( 32 ) of the bonding elements ( 24 ) with the tracks ( 20 ) with the bonding elements ( 24 ) of the power semiconductor chips ( 22 ) are contacted. Leistungshalbleitermodul nach Anspruch 1, dadurch gekennzeichnet, dass die Bondverbindungselemente (24) von Bondbändchen (38) gebildet sind.Power semiconductor module according to claim 1, characterized in that the bonding connection elements ( 24 ) of bond ribbons ( 38 ) are formed. Leistungshalbleitermodul nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Druckkontakt-Federelemente (28) eine Breitenabmessung besitzen, die geringfügig größer ist als die Breitenabmessung der Bondverbindungselemente (24).Power semiconductor module according to claim 1 or 2, characterized in that the pressure-contact spring elements ( 28 ) have a width dimension which is slightly larger than the width dimension of the bonding elements ( 24 ).
DE102007024160A 2007-05-24 2007-05-24 The power semiconductor module Expired - Fee Related DE102007024160B4 (en)

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JP6621714B2 (en) 2016-07-01 2019-12-18 三菱電機株式会社 Semiconductor device
DE102017126716B4 (en) * 2017-11-14 2021-07-22 Semikron Elektronik Gmbh & Co. Kg Arrangement with a power semiconductor module with a switching device
DE102021200562A1 (en) 2021-01-22 2022-07-28 Vitesco Technologies Germany Gmbh semiconductor module
DE102022117625B3 (en) 2022-07-14 2023-05-25 Semikron Elektronik Gmbh & Co. Kg Arrangement with a housing and an electrically conductive contact spring and power semiconductor module herewith
DE102022211620A1 (en) 2022-11-03 2024-05-08 Zf Friedrichshafen Ag Power module with top contact

Citations (5)

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Publication number Priority date Publication date Assignee Title
DE19630173C2 (en) * 1996-07-26 2001-02-08 Semikron Elektronik Gmbh Power module with semiconductor components
DE10306643A1 (en) * 2003-02-18 2004-08-26 Semikron Elektronik Gmbh Pressure contacting for a power semiconductor module
WO2004100258A2 (en) * 2003-05-02 2004-11-18 Orthodyne Electronics Corporation Ribbon bonding
DE102004031623A1 (en) * 2004-06-30 2006-01-19 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Power semiconductor module with connections to control circuit, has casing with spring-loaded contact making external connection and having an internal bonding surface
DE102004051039A1 (en) * 2004-10-20 2006-05-04 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with pressure contact device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19630173C2 (en) * 1996-07-26 2001-02-08 Semikron Elektronik Gmbh Power module with semiconductor components
DE10306643A1 (en) * 2003-02-18 2004-08-26 Semikron Elektronik Gmbh Pressure contacting for a power semiconductor module
WO2004100258A2 (en) * 2003-05-02 2004-11-18 Orthodyne Electronics Corporation Ribbon bonding
DE102004031623A1 (en) * 2004-06-30 2006-01-19 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Power semiconductor module with connections to control circuit, has casing with spring-loaded contact making external connection and having an internal bonding surface
DE102004051039A1 (en) * 2004-10-20 2006-05-04 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with pressure contact device

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