DE102006016501A1 - Power semiconductor module e.g. insulated gate bipolar transistor six pack, for use in condenser less voltage link frequency converter, has one connection pin connected with negative direct current cable using additional cable - Google Patents

Power semiconductor module e.g. insulated gate bipolar transistor six pack, for use in condenser less voltage link frequency converter, has one connection pin connected with negative direct current cable using additional cable

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Publication number
DE102006016501A1
DE102006016501A1 DE200610016501 DE102006016501A DE102006016501A1 DE 102006016501 A1 DE102006016501 A1 DE 102006016501A1 DE 200610016501 DE200610016501 DE 200610016501 DE 102006016501 A DE102006016501 A DE 102006016501A DE 102006016501 A1 DE102006016501 A1 DE 102006016501A1
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Germany
Prior art keywords
power semiconductor
semiconductor module
module
connected
characterized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE200610016501
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German (de)
Inventor
Kurt GÖPFRICH
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE200610016501 priority Critical patent/DE102006016501A1/en
Publication of DE102006016501A1 publication Critical patent/DE102006016501A1/en
Application status is Withdrawn legal-status Critical

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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J3/00Circuit arrangements for ac mains or ac distribution networks
    • H02J3/38Arrangements for parallely feeding a single network by two or more generators, converters or transformers
    • H02J3/381Dispersed generators
    • H02J3/382Dispersed generators the generators exploiting renewable energy
    • H02J3/383Solar energy, e.g. photovoltaic energy
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M2001/0067Converter structures employing plural converter units, other than for parallel operation of the units on a single load
    • H02M2001/007Plural converter units in cascade
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1584Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/56Power conversion electric or electronic aspects
    • Y02E10/563Power conversion electric or electronic aspects for grid-connected applications

Abstract

The invention relates to a power semiconductor module (54) and to a solar inverter. According to the invention, the power semiconductor module (54) comprises six diodes (D1,..., D6) connected in a three-phase bridge circuit, three turn-off semiconductor switches (T2, T4, T6) each of a diode (D2, D4, D6) of a lower bridge side the three-phase bridge circuit are electrically connected in parallel, and a pin assignment corresponding to a six-pack power semiconductor module, wherein the bridge strands (20, 22, 24) of the three-phase bridge circuit by means of a shorting bridge (56) are short-circuited and this with a first AC-side terminal pin (L1 ) of the module (54) are electrically conductively connected, wherein a second and a third AC voltage side terminal pin (L2, L3) of the module (54) respectively from the corresponding bridge strand (22, 24) are separated and wherein a third AC voltage side terminal pin (L3) of the Module (54) by means of an additional line (58) with a pin at the (DC) connected negative n DC line (6) is electrically connected. Thus, with this power semiconductor module according to the invention (54) from a commercially available capacitor-less voltage intermediate circuit converter (26) of the drive technology without great effort to produce a solar inverter.

Description

  • The The invention relates to a power semiconductor module and a solar inverter.
  • in the Trading semiconductor power modules are available, their pins along a circumferential side wall or in the middle of this module are arranged. These pins are inside of the power semiconductor module arranged semiconductor chips electrically conductively connected. Which pin with which connection a arranged in the interior of the module semiconductor chip is, can be taken from a pin assignment of this power semiconductor module become.
  • The Semiconductor chips in a power semiconductor module can be used in a B6 bridge circuit, in a B2 bridge circuit, in a bridge branch circuit or arranged individually. If the semiconductor chips, for example turn-off semiconductor, a power semiconductor module in one B6 bridge circuit are interconnected, this power semiconductor module is referred to as a "six-pack". The name for the Power semiconductor module with an internal B2 bridge circuit is called a "fourpack". has the power semiconductor module on semiconductor chips, leading to a bridge branch circuit are interconnected, this power semiconductor module is referred to as a "dual module". Dependent on the semiconductor chips used (Insulated Gate Bipolar Transistor (IGBT)) and a voltage class becomes a six-pack, for example referred to as 600V IGBT six-pack.
  • In the 1 is, for example, an electrical equivalent circuit diagram of a power semiconductor module 2 , In particular, an IGBT six-pack, shown in more detail. According to the term "six-pack", this power semiconductor module has 2 six turn-off semiconductor switches T1, ..., T6, in particular IGBTs, which are interconnected in a B6 bridge circuit. Each turn-off semiconductor switch T1, ..., T6, a diode D1, ..., D6 is electrically connected in anti-parallel. A positive DC line 4 This B6 bridge circuit is connected to a pin DC +, whereas its negative DC line 6 DC-electrically connected to a terminal pin. One connection point each 8th . 10 or 12 each of a bridge branch 14 . 16 or 18 is by means of an AC power line 20 . 22 or 24 electrically connected to a terminal L1, L2 or L3. These AC power lines 20 . 22 and 24 are also referred to as a bridge strand. In addition, this power semiconductor module has 2 in each case two connection pins G1, E1; G2, E2; G3, E3; G4, E4; G5, E5 and G6, E6, which are internally electrically connected in each case with the two control terminals of each turn-off semiconductor switch T1, ..., T6.
  • The IGBT chips used for the turn-off semiconductor switches T1, ..., T6 and the diode chips used for the existing diodes D1, ..., D6 are each dimensioned differently, the dimensioning of the function of the power semiconductor module 2 depends. Will the power semiconductor module 2 as inverter module 28 ( 2 ), these IGBT chips are designed for a high pulse frequency, for example several kHz, and the associated diode chips are used as freewheeling diodes. Will the power semiconductor module 2 as feed module 30 ( 2 ), the IGBT chips are clocked at line frequency and the diode chips are used as line diodes.
  • In the 2 is an equivalent circuit diagram of a capacitor-less voltage source inverter 26 shown, which is a power semiconductor module 2 according to 1 on the one hand as inverter module 28 and on the other hand as a feed module 30 used. The connection pins G1, E1; ...; G6, E6 of the turn-off semiconductor switches T1, ..., T6 of the inverter module 28 used power semiconductor module 2 are with a control and regulating device 32 whereas the connection pins L1, L2 and L3 have measuring resistors 34 . 36 and 38 are linked. The free ends of these measuring resistors 34 . 36 and 38 , also referred to as shunts, each form a load-side AC voltage terminal U, V and W of the capacitor-less voltage source inverter 26 , At these terminals U, V and W is in this equivalent circuit, a three-phase motor 40 connected. The inverter module 28 , the control equipment 32 and the shunts 34 . 36 and 38 form a load-side converter 42 of the capacitor-free voltage source inverter 26 , A mains-side power converter 44 this capacitor-less voltage source inverter 26 points next to the as feed module 30 used power semiconductor module 2 a control device 46 and a filter 48 on.
  • The filter 6 , which has three capacitors C1, C2 and C3 electrically connected in star, is connected to the connection pins L1, L2 and L3 of the supply module 30 connected. Likewise, these connection pins L1, L2 and L3 with line-side AC terminals R, S and T of the capacitor-less voltage source inverter 26 electrically connected. The filter 48 also has damping resistors R1, R2 and R3, which are each electrically connected in series with a capacitor C1, C2 and C3. The capacitors C1, C2 and C3 of this filter 48 can also be connected in delta.
  • The control device 46 generates control signals which the turn-off semiconductor switches T1, ..., T6, in particular power semiconductor switch, the feed module 30 such that they each become conductive, if in each case the corresponding anti-parallel connected diodes D1, ..., D6 are conductive. This means that a drive signal is generated in each case at the natural commutation times (point of intersection of two phase voltages, amplitude of a chained mains voltage is equal to zero). Thus, each turn-off power semiconductor switch T1, ..., T6 this feed module 30 during the current carrying times corresponding diodes D1, ..., D6 turned on. Through this power-frequency control of the turn-off power semiconductor switches T1, ..., T6 of the supply module 30 is this network-side converter 44 Regenerative at any time. This network-side converter 44 because of its power frequency clocking as a grid-controlled, controlled power converter 30 designated. An embodiment of the control device 46 is for example the DE 199 13 634 A1 refer to.
  • This network-side converter 44 and the load-side converter 42 of the capacitor-free voltage source inverter 26 are DC voltage directly electrically connected to each other. That is, the connection pins DC + or DC- of the supply module 30 and the inverter module 28 are each by means of a DC bus 50 respectively. 52 electrically connected to each other. To support the commutations of the turn-off power semiconductor switches T1, ..., T6 of the inverter module 28 a capacitor C DC is provided. This commutation capacitor C DC is designed as a film capacitor and is directly connected to the inverter module 28 connected.
  • Such a capacitor-free voltage source inverter 26 is from the publication entitled "Fundamental Frequency Front End Converter (F 3 E) - a DC-link drive converter without electrolytic capacitor" known which is published in the Proceedings of the trade fair "PCIM 2003". According to this publication, the grid-side converter, which consists of the power-frequency controlled feed module 30 and the filter 48 exists, referred to as F 3 E power converters.
  • In the trade are next to this capacitor-less voltage source inverter 26 Also solar inverter available, with the help of one of a regenerative energy source, such as a solar generator, generated energy in a network, in particular three-phase network, can be fed. Such a commercially available solar inverter has a self-commutated pulse converter, the AC side is connected by means of a multi-phase choke circuit with a regenerative energy receiving network. On the DC voltage side, at least one electrolytic capacitor is electrically connected in parallel with this self-commutated pulse-controlled converter. The control device of this self-commutated pulse converter is on the control side electrically connected to a respective control input of the turn-off power semiconductor switch of the self-commutated pulse converter, wherein the input side detected phase voltages and phase currents of the energy-absorbing network are pending.
  • By the use of an electrolytic capacitor in such commercially available Solar Inverter is the life of this solar inverter limited. This lifetime is only a few 10,000 hours of use long. Furthermore needed this solar inverter mains chokes, which is a not negligible place claim. Furthermore, the control device is expensive and thus costly.
  • Such commercially available For example, solar inverters use an inverter an uninterruptible power supply device that also is referred to as UPS device. This will be for the development of a Solar inverter costs saved. Such a second use an inverter of a UPS device is useful because on the one hand the inverter of the UPS device also energy from a Battery in a network feeds and secondly the UPS device individual components such as rectifier, voltage intermediate circuit and inverter is constructed, making them as components to disposal stand.
  • Of the The invention is based on the object, a power semiconductor module specify with the from a known kon capacitor-less voltage source inverter with a fundamental frequency front end without much effort Solar inverters can be created.
  • These Task is according to the invention with the Characteristics of claim 1 solved.
  • The power semiconductor module according to the invention differs from a known power semiconductor module in the "six-pack" embodiment in that the turn-off semiconductor switches of the upper bridge side of the B6 bridge circuit are no longer present, the AC lines each connecting a connection point of each bridge branch to an AC-side terminal pin, of these three terminal gins, only the first terminal pin with the shorted AC lines and the third terminal pin with an additional line to the negative DC line are connected. The second connection pin remains free.
  • This modification according to the invention of a conventional IGBT power semiconductor module in the "six-pack" embodiment results in a six-pack module with unchanged pin assignment, which functionally has an actuator for a step-up converter. As a result, this inventive IGBT power module can be used as the inverter module 28 replace the commercially available IGBT six-pack power module in a load-side converter of a capacitor-less voltage source inverter.
  • advantageous embodiments of the power semiconductor module are the dependent claims 2 to 5 to remove.
  • Becomes this power semiconductor module according to the invention in place of a conventional one IGBT six-pack power module of a load-side converter of a Condenserless voltage source inverter arranged so also needs the control of the inverter module by a control device for a boost converter to be replaced. On the load side, only one has to be left Series connection of two memory elements of a boost converter, namely a storage choke and a smoothing capacitor, electrically connected in parallel with two load-side AC voltage connections be to get out of a capacitor-less voltage source converter drive technology to generate a solar inverter. Electrically parallel to smoothing capacitor can then be a regenerative energy source, for example a solar generator, be connected.
  • With Help of the power semiconductor module according to the invention Thus, a capacitor-free voltage source inverter of the drive technology without big ones Effort to be converted into a solar inverter, the Cost is minimal. Furthermore is achieved by the use of a capacitor-less voltage source inverter according to the invention the effort for significantly reduces the development of a solar inverter. These savings can be passed on to customers, so that the selling price of one such solar inverter is considerably lower than a Commercially available solar inverter.
  • advantageous embodiments of the solar inverter are the dependent claims 7 to 11 to remove.
  • to further explanation The invention is with reference to the drawing, in which an embodiment the power semiconductor module according to the invention and an embodiment a condenserless invention Voltage source inverter are illustrated schematically.
  • 1 shows an equivalent circuit diagram of a commercially available power semiconductor module in the embodiment "six-pack", the
  • 2 shows an equivalent circuit diagram of a known capacitor-less voltage source inverter, in the
  • 3 an equivalent circuit diagram of a power semiconductor module is illustrated according to the invention and the
  • 4 shows an equivalent circuit diagram of a solar inverter having a capacitor-less voltage source inverter with a power semiconductor module according to the invention as the inverter module.
  • According to the equivalent circuit diagram 3 has the power semiconductor module according to the invention 54 three turn-off semiconductor switches T2, T4 and T6 and six diodes D1, ..., D6. These six diodes D1,..., D6 are interconnected in a B6 bridge circuit. The three diodes D2, D4 and D6 of the lower bridge side of the B6 bridge circuit each have a turn-off semiconductor switch T2, T4 or T6 are electrically connected in parallel. The cathodes of the diodes D1, D3 and D5 of the upper bridge side of the B6 bridge circuit are by means of the positive DC voltage line 4 electrically connected to the connection pin DC +. The anodes of the diodes D2, D4 and D6 of the lower bridge side of the B6 bridge circuit are by means of the negative DC voltage line 6 electrically connected to the connection pin DC-.
  • As compared to the power semiconductor module 2 of the 1 at the power semiconductor module 54 According to the invention, the turn-off semiconductor switches T1, T3 and T5 of the upper bridge side of the B6 bridge circuit are omitted, there are no electrical connections to corresponding terminal pins G1, E1; G3, E3 and G5, E5. In addition, compared to the power semiconductor module 2 of the 1 the AC power lines 20 . 22 and 24 by means of a shorting bridge 56 shorted. In addition, the line sections of the AC lines 22 and 24 between the shorting bridge 56 and the connection pins L2 and L3 interrupted. Of these two connection pins L2 and L3, only the connection pin L3 is connected by means of an additional line 58 with the negative DC line 6 electrically connected. As a result, this connection pin L3 is electrically conductively connected to the connection pin DC.
  • A comparison of the power semiconductor module according to the invention 54 with the commercially available power semiconductor module 2 shows that their pinouts are identical. As a result, the power semiconductor module according to the invention 54 also in place of the power semiconductor module 2 as inverter module 28 in the load-side converter 42 of the capacitor-free voltage source inverter 26 according to 2 be interconnected without having to redistribute an existing control board.
  • In the 4 an equivalent circuit diagram of a solar inverter according to the invention is shown, which is a capacitor-less voltage source inverter 26 to 2 has, wherein instead of the power semiconductor module 2 to 1 as inverter module 28 the power semiconductor module 54 to 3 is used. In place of the control and regulating device 32 is now a control device 60 intended. When replacing the control and regulating device 32 against the control device 60 only a new software will be installed. That is, for example, instead of a field-oriented control software with a vector modulation software, a control software for a boost converter is implemented. In addition, this capacitor-less voltage source inverter differs 26 compared to the embodiment according to 2 in that electrically parallel to the AC terminals U and W of the voltage source inverter 26 a series connection of a storage inductor L S and a smoothing capacitor C G2 is connected. Electrically parallel to the smoothing capacitor C G2 is a regenerative energy source 62 , For example, a solar generator, switched. The smoothing capacitor C G2 is used for smoothing the generated DC voltage U DC , since this varies over a predetermined time range (daily variation). The commutation capacitor C DC of the capacitor-less voltage source inverter 26 is used in this embodiment as a smoothing capacitor of the boost converter. The boost converter, with which a generated DC voltage U DC of the regenerative energy source 62 is converted into a predetermined amplitude of a DC voltage, for example, the amplitude of a rectified mains voltage, consists of the commutation capacitor C DC , the storage inductor L S , the smoothing capacitor CG2 and the power semiconductor module according to the invention 54 ,
  • Thus, the storage inductor L S of the boost converter occupies as small a volume as possible, so that they require little space in the capacitor-less voltage source inverter 26 , which is now functionally a solar inverter, can be integrated, the turn-off semiconductor switches T2, T4 and T6 of the power semiconductor module 54 , which are electrically connected in parallel, clocked at a high frequency. In order to be able to implement a high clock frequency, a MOSFET or a junction field effect transistor, which is also referred to as a junction field effect transistor (JFET), is provided for each of these turn-off semiconductor switches T2, T4 and T6. Thus, the switching losses of these parallel turn-off semiconductor switches T2, T4 and T6 remain low at a high clock frequency, are used as turn-off semiconductor switches T2, T4 and T6 each have a MOSFET or a JFET made of silicon carbide. In addition, can be used as turn-off semiconductor switches T2, T4 and T6 as shown in each case an IGBT. In order for these to be able to implement a high clock frequency, these IGBTs are made of silicon and the associated antiparallel-connected diodes D2, D4 and D6 made of silicon carbide.
  • By using the power semiconductor module according to the invention 54 in a capacitor-free voltage source inverter 26 the drive technology, you get with the interconnection of a storage inductor L S and a smoothing capacitor C G2 a cost-effective solar inverter, which can be created without much development effort. Since these condenserless voltage source inverter 26 is widely used in drive technology, this is inexpensive to buy, in which case this purchase price can have a positive effect on the selling price of the solar inverter.

Claims (11)

  1. Power semiconductor module ( 54 ) with six in a three-phase bridge circuit connected diodes (D1, ..., D6), with three turn-off power semiconductor switches (T2, T4, T6), each having a diode (D2, D4, D6) a lower bridge side of the three-phase bridge circuit are electrically connected in parallel and with a six-pack power semiconductor module corresponding pin assignment, the bridge strands ( 20 . 22 . 24 ) of the three-phase bridge circuit by means of a short-circuit bridge ( 56 ) are short-circuited and these with a first AC-side terminal pin (L1) of the module ( 54 ) are electrically conductively connected, wherein a second and a third AC-side terminal (L2, L3) of the module ( 54 ) each of the corresponding bridge strand ( 22 . 24 ) and wherein a third AC-side terminal pin (L3) of the module ( 54 ) by means of an additional line ( 58 ) with a negative DC line connected to the terminal pin (DC) ( 6 ) is electrically connected.
  2. Power semiconductor module ( 54 ) according to claim 1, characterized in that measuring resistors ( 34 . 36 . 38 ) in the module ( 54 ) are integrated.
  3. Power semiconductor module ( 54 ) according to claim 1 or 2, characterized in that as turn-off power semiconductor switch (T2, T4, T6) is provided in each case a self-locking MOS field effect transistor made of silicon carbide.
  4. Power semiconductor module ( 54 ) according to claim 1 or 2, characterized in that as turn-off power semiconductor switch (T2, T4, T6) is provided in each case an insulated gate bipolar transistor made of silicon.
  5. Power semiconductor module ( 54 ) according to claim 1 and 4, characterized in that the diodes (D1, D3, D5) of the upper bridge side of the three-phase bridge circuit of silicon and that the diodes (D2, D4, D6) of the lower bridge side of the three-phase bridge circuit of silicon carbide are.
  6. Solar inverter with a capacitor-less voltage source converter ( 26 ), the mains side a line-commutated, controlled power converter ( 44 ) and a filter ( 48 ) and load side a power semiconductor module having a power converter ( 42 ), characterized in that as a power semiconductor module of the load-side converter ( 42 ) the power semiconductor module ( 54 ) is provided according to claim 1, that electrically parallel to the first and third AC-side terminal pin (L1, L3) of the module ( 54 ) a series circuit of smoothing capacitor (C G2 ) and storage choke (L S ) is connected and that electrically parallel to the smoothing capacitor (C G2 ) a DC voltage source ( 62 ) is switched.
  7. Solar inverter according to claim 6, characterized in that as DC voltage source ( 62 ) a regenerative energy source is provided.
  8. Solar inverter according to claim 7, characterized that provided as a regenerative energy source, a solar generator is.
  9. Solar inverter according to one of claims 6 to 8, characterized in that the filter ( 48 ) has three capacitors (C1, C2, C3), which are connected in star.
  10. Solar inverter according to one of claims 6 to 8, characterized in that the filter ( 48 ) has three capacitors (C1, C2, C3), which are connected in delta.
  11. Solar inverter according to one of claims 6 to 8, characterized in that each capacitor (C1, C2, C3) of the filter ( 48 ) a damping resistor (R1, R2, R3) are electrically connected in series.
DE200610016501 2006-04-07 2006-04-07 Power semiconductor module e.g. insulated gate bipolar transistor six pack, for use in condenser less voltage link frequency converter, has one connection pin connected with negative direct current cable using additional cable Withdrawn DE102006016501A1 (en)

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DE200610016501 DE102006016501A1 (en) 2006-04-07 2006-04-07 Power semiconductor module e.g. insulated gate bipolar transistor six pack, for use in condenser less voltage link frequency converter, has one connection pin connected with negative direct current cable using additional cable

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008059330A1 (en) * 2008-11-27 2010-06-02 Siemens Aktiengesellschaft Three-phase power inverter for e.g. solar module, has four-point half bridge module including half bridge that performs circuit design based function of free-wheeling diode and switching element of step-up chopper unit
RU2470448C1 (en) * 2011-09-27 2012-12-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Алтайский государственный технический университет им. И.И. Ползунова" (АлтГТУ) Low-frequency frequency converter driven by network
RU2470449C1 (en) * 2011-10-21 2012-12-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Алтайский государственный технический университет им. И.И. Ползунова" (АлтГТУ) Three-phase reversible sign-changing frequency converter driven by network

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Publication number Priority date Publication date Assignee Title
DE19518479A1 (en) * 1995-05-19 1996-11-21 Thyssen Aufzuege Gmbh power converters
US5898585A (en) * 1997-05-29 1999-04-27 Premier Global Corporation, Ltd. Apparatus and method for providing supplemental alternating current from a solar cell array
US6940735B2 (en) * 2003-11-14 2005-09-06 Ballard Power Systems Corporation Power converter system
DE102004040513A1 (en) * 2004-08-20 2006-03-02 Siemens Ag Power semiconductor module with several coupling pins of such shape that they protrude through corresponding circuit board

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19518479A1 (en) * 1995-05-19 1996-11-21 Thyssen Aufzuege Gmbh power converters
US5898585A (en) * 1997-05-29 1999-04-27 Premier Global Corporation, Ltd. Apparatus and method for providing supplemental alternating current from a solar cell array
US6940735B2 (en) * 2003-11-14 2005-09-06 Ballard Power Systems Corporation Power converter system
DE102004040513A1 (en) * 2004-08-20 2006-03-02 Siemens Ag Power semiconductor module with several coupling pins of such shape that they protrude through corresponding circuit board

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008059330A1 (en) * 2008-11-27 2010-06-02 Siemens Aktiengesellschaft Three-phase power inverter for e.g. solar module, has four-point half bridge module including half bridge that performs circuit design based function of free-wheeling diode and switching element of step-up chopper unit
RU2470448C1 (en) * 2011-09-27 2012-12-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Алтайский государственный технический университет им. И.И. Ползунова" (АлтГТУ) Low-frequency frequency converter driven by network
RU2470449C1 (en) * 2011-10-21 2012-12-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Алтайский государственный технический университет им. И.И. Ползунова" (АлтГТУ) Three-phase reversible sign-changing frequency converter driven by network

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