DE102006006825A1 - Semiconductor component e.g. ball grid array semiconductor component, has semiconductor chip with protective casing, and soldering ball arranged in recess of electrical insulating layer and connected with connecting carrier - Google Patents

Semiconductor component e.g. ball grid array semiconductor component, has semiconductor chip with protective casing, and soldering ball arranged in recess of electrical insulating layer and connected with connecting carrier

Info

Publication number
DE102006006825A1
DE102006006825A1 DE102006006825A DE102006006825A DE102006006825A1 DE 102006006825 A1 DE102006006825 A1 DE 102006006825A1 DE 102006006825 A DE102006006825 A DE 102006006825A DE 102006006825 A DE102006006825 A DE 102006006825A DE 102006006825 A1 DE102006006825 A1 DE 102006006825A1
Authority
DE
Germany
Prior art keywords
semiconductor chip
electrically conductive
connecting
insulating layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102006006825A
Other languages
German (de)
Inventor
Soo Gil Park
Kenneth Rebibis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE102006006825A priority Critical patent/DE102006006825A1/en
Publication of DE102006006825A1 publication Critical patent/DE102006006825A1/en
Application status is Ceased legal-status Critical

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    • HELECTRICITY
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • H01L23/4951Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
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Abstract

Component has a semiconductor chip (401) with a protective casing (406) and a contact surface (409). An electrically conducting connecting carrier (402) consists of a contact finger, which is arranged corresponding to the contact surface. Electrically conducting units (403) are arranged between the contact finger and the contact surface, and are made of polymer or resin. An electrically insulating layer with a recess is superimposed on the carrier. A soldering ball (405) is arranged in the recess and is connected with the carrier, where the layer is made of glass fiber reinforced resin. An independent claim is also included for a method for manufacturing a semiconductor component.

Description

  • Die Erfindung betrifft ein Halbleiterbauelement und ein Verfahren zum Herstellen eines Halbleiterbauelements. The invention relates to a semiconductor device and a method of manufacturing a semiconductor device.
  • Zur Kontaktierung von Halbleiterchips in Halbleiterbauelementen werden Halbleiterchips mit Hilfe von Bonddrähten auf einen Verbindungsträger, beispielsweise einem Lead Frame montiert. For contacting of the semiconductor chip in semiconductor devices, the semiconductor chip by means of bonding wires on a connecting support, such as a lead frame to be mounted.
  • Ein üblicher Aufbau eines solchen Halbleiterbauelementes mit einem Lead Frame ist in A conventional structure of such a semiconductor device having a lead frame is in 1 1 gezeigt. shown. Der Halbleiterchip The semiconductor chip 101 101 und der Lead Frame and the leadframe 102 102 sind in einem Halbleiterchip-Gehäuse are in a semiconductor chip package 105 105 angeordnet. arranged. Der Lead Frame The leadframe 102 102 verläuft vom Inneren des Gehäuses extends from the interior of the housing 105 105 nach außen in Form von metallischen Anschlussstiften outwardly in the form of metallic pins 106 106 , die sich an den Seiten des Halbleiterchip-Gehäuses That on the sides of the semiconductor chip package 105 105 befinden. are located. Das Drahtbonden des Halbleiterchips mit dem Lead Frame muss für jede Kontaktfläche des Halbleiterchips separat durchgeführt werden. The wire bonding of the semiconductor chip to the leadframe must be performed separately for each contact surface of the semiconductor chip.
  • Die zunehmende Miniaturisierung und Integration von Halbleiterbauelementen führt sowohl zu verkleinerten Gehäusebauformen sowie einer steigenden Funktionalität, was häufig eine steigende Anzahl von Anschlusskontakten bedingt. The increasing miniaturization and integration of semiconductor devices leads both to reduced housing designs and improving their functionality, which often causes an increase in the number of terminals. Deshalb ist es bei hochintegrierten Halbleiterbauelementen nicht länger möglich, alle Anschlusskontakte an den Seiten des Gehäuses anzuordnen, was zur Bildung des sogenannten BGA-Standards (Ball Grid Array) führte. Therefore, in highly integrated semiconductor devices no longer possible to arrange all the terminals on the sides of the case, led resulting in the formation of the so-called BGA Standards (Ball Grid Array).
  • Bei einem BGA-Halbleiterbauelement erfolgt die Kontaktierung mittels Lotkugeln, die in einem Raster, dem Ball Grid Array, unterhalb des Halbleiterbauelementes angeordnet sind. In a BGA type semiconductor device, the contacting by means of solder balls which are arranged in a grid, the ball grid array below the semiconductor component takes place. Die weiter fortschreitende Miniaturisierung führte zur Entwicklung des FBGA- oder FPBGA-Standards (Fine Pitch Ball Grid Ar ray) mit einem noch feineren Raster der Lotkugeln. The continued miniaturization led to the development of the FBGA or FPBGA standards (Fine Pitch Ball Grid Ar ray) with an even finer grid of solder balls. Die vorliegende Erfindung schließt FBGA- und FPBGA-Halbleiterbauelemente als Untergruppe von BGA-Halbleiterbauelementen ein. The present invention includes FBGA and FPBGA semiconductor devices as a subset of the BGA type semiconductor devices.
  • Der Aufbau eines herkömmlichen BGA-Halbleiterbauelements The structure of a conventional BGA type semiconductor device 200 200 ist in is in 2 2 gezeigt. shown. Ein Halbleiterchip A semiconductor chip 201 201 ist mit seiner aktiven Seite nach oben auf einem Substrat is with its active face up on a substrate 202 202 aufgebracht und mittels Drahtbondverbindungen and applied by means of wire bond connections 203 203 elektrisch mit dem Substrat electrically connected to the substrate 202 202 verbunden. connected. Das Substrat the substrate 202 202 ist hinsichtlich Material und Aufbau einer mehrlagigen Leiterplatte ähnlich, jedoch sind die Außenabmessungen und die in dem Substrat is similar in material and construction of a multilayer printed circuit board, however, the outer dimensions and in the substrate 202 202 gebildeten Strukturen wesentlich kleiner. Structures formed much smaller. Die Unterseite des Substrates The underside of the substrate 202 202 enthält Kontaktflächen, auf denen die Lotkugeln contains contact surfaces on which the solder balls 204 204 angeordnet sind. are arranged. Der Halbleiterchip The semiconductor chip 201 201 ist in einem Gehäuse is in a housing 205 205 angeordnet, welches auf einer Seite durch das Substrat arranged, which on one side by the substrate 202 202 begrenzt wird. is limited.
  • 3 3 zeigt den Aufbau eines anderen herkömmlichen BGA-Halbleiterbauelements shows the structure of another conventional BGA type semiconductor device 300 300 , wobei der Halbleiterchip Wherein the semiconductor chip 301 301 mit seiner aktiven Seite nach unten mittels Lotbumps with its active side down by means of solder bumps 303 303 elektrisch und mechanisch mit dem Substrat electrically and mechanically connected to the substrate 302 302 verbunden ist. connected is. Die Unterseite des Substrates The underside of the substrate 302 302 enthält Kontaktflächen, auf denen Lotkugeln contains contact surfaces on which solder balls 304 304 angeordnet sind. are arranged. Der Halbleiterchip The semiconductor chip 301 301 ist in einem Gehäuse is in a housing 305 305 angeordnet, welches auf einer Seite durch das Substrat arranged, which on one side by the substrate 302 302 begrenzt wird. is limited.
  • Die Halbleiterbauelemente The semiconductor components 200 200 , . 300 300 gemäß according to 2 2 und and 3 3 haben unter anderem den Nachteil, dass das Substrat, hergestellt aus glasfaserverstärktem Kunstharz und der Halbleiterchip (aus Silizium) ein stark unterschiedliches thermisches Ausdehnungsverhalten haben, was zu mechanischen Spannungen und damit zu Zuverlässigkeitsproblemen bei den gebildeten Halbleiterbauelementen have, inter alia, the disadvantage that the substrate is made of glass fiber reinforced synthetic resin and the semiconductor chip have (made of silicon) a strongly different thermal expansion behavior, leading to mechanical stresses and thus to reliability problems in the formed semiconductor devices 200 200 , . 300 300 führt. leads. Zudem stellen die relativ hohen Materialkosten des Substrates Also provide the relatively high material cost of the substrate 202 202 , . 302 302 einen erheblichen Anteil der Gesamtkosten der Halbleiterbauelemente a significant proportion of the total cost of the semiconductor devices 200 200 , . 300 300 dar. represents.
  • Der Erfindung liegt das Problem zugrunde, ein zuverlässiges und zugleich kostengünstiges Halbleiterbauelement zu schaffen. The invention is based on the problem to provide a reliable and cost-effective semiconductor device.
  • Das Problem wird durch das Halbleiterbauelement sowie durch das Verfahren zum Herstellen eines Halbleiterbauelements mit den Merkmalen gemäß den unabhängigen Patentansprüchen gelöst. The problem is solved by the semiconductor device and the method for manufacturing a semiconductor device having the features according to the independent claims. Beispielhafte Ausgestaltungen der Erfindung ergeben sich aus den abhängigen Ansprüchen. Exemplary embodiments of the invention emerge from the dependent claims. Die Ausgestaltungen der Erfindung gelten sowohl für das Halbleiterbauelement als auch, für das Verfahren zum Herstellen eines Halbleiterbauelements. The embodiments of the invention apply to both the semiconductor device and for the method of manufacturing a semiconductor device.
  • Ein Halbleiterbauelement weist mindestens einen Halbleiterchip auf, welcher Kontaktflächen aufweist, die in einem vorgegebenen geometrischen Raster auf dem Halbleiterchip angeordnet sind. A semiconductor device includes at least one semiconductor chip, which has contact surfaces which are arranged in a predetermined geometric grid on the semiconductor chip. Das Halbleiterbauelement weist einen elektrisch leitfähigen Verbindungsträger auf mit Kontaktfingern, die entsprechend dem geometrischen Raster der Kontaktflächen des Halbleiterchips angeordnet sind, sowie mehrere elektrisch leitfähige Elemente, die zwischen einem Kontaktfinger des Verbindungsträgers und einer Kontaktfläche des Halbleiterchips angeordnet sind und eine elektrische Verbindung herstellen. The semiconductor device comprises an electrically conductive connecting carrier with contact fingers which are arranged according to the geometrical pattern of the contact areas of the semiconductor chip, and a plurality of electrically conductive elements which are arranged between a contact finger of the connecting support and a contact surface of the semiconductor chip and make an electrical connection. Auf dem Verbindungsträger ist eine elektrisch isolierende Schicht mit Durchbrüchen angebracht, die zur Aufnahme von Lotkugeln dienen, wobei die Lotkugeln mit dem Verbindungsträger elektrisch leitend verbunden sind. On the connecting beam, an electrically insulating layer having openings is attached, which serve to accommodate solder balls, the solder balls are electrically conductively connected to the connecting beam. Ferner weist das Halbleiterbauelement eine Schutz-Umhüllung des Halbleiterchips auf, wobei das Gehäuse des Halbleiterbauelementes auf einer Seite durch die elektrisch isolierende Schicht mit den Lotkugeln begrenzt wird. Further, the semiconductor device in a protective envelope of the semiconductor chip, wherein the housing of the semiconductor device is limited on one side by the electrically insulating layer with the solder balls.
  • Ein Aspekt der Erfindung gem. according to an aspect of the invention. 4 4 kann darin gesehen werden, dass ein leitfähiger Verbindungsträger can be seen in that a conductive connection support 402 402 vorgesehen ist, welcher einerseits direkt mit einem oder mehreren Halbleiterchips is provided, which on the one hand directly to one or more semiconductor chips 401 401 gekoppelt ist und andererseits mit Lotkugeln is coupled and on the other with the solder balls 405 405 verbunden ist, welche in Durchbrüchen einer auf dem Verbindungsträger angeordneten elektrisch isolierenden Schicht is connected, which is electrically insulating in openings, arranged on the connecting carrier layer 404 404 angeordnet sind, damit das Halbleiterbauelement mittels dieser Lotkugeln beispielsweise auf einer übergeordneten Leiterplatte montiert werden kann. are arranged so that the semiconductor device can be mounted, for example on a parent circuit board by means of solder balls.
  • Gemäß einem Aspekt der Erfindung kann ein Vorteil gegenüber dem According to one aspect of the invention, an advantage over the 1 1 dargestellten Halbleiterbauelement darin gesehen werden, dass die Erfindung wegen des BGA Anschluss-Schemas für hochintegrierte Halbleiterbauelemente The semiconductor device shown be seen that the invention because of the BGA connection scheme for highly integrated semiconductor devices 200 200 , . 300 300 , wie sie beispielsweise in As for example in 2 2 oder or 3 3 dargestellt sind, verwendet werden kann. are shown, may be used. Dabei wird das kostenintensive Substrat durch einen Verbindungsträger ersetzt. Here, the expensive substrate is replaced by a compound carrier.
  • Gemäß einem Teil-Aspekt der Erfindung kann zudem das sequentielle und damit zeitintensive Drahtbonden gegenüber den in According to a partial aspect of the invention, the sequential and thus time-consuming wire bonding can also compared to the in 2 2 und and 3 3 dargestellten Halbleiterbauelementen durch einen Verfahren ersetzt werden, bei welchem alle Verbindungen zwischen Halbleiterchip und Verbindungsträger in wenigen Fertigungsschritten parallel hergestellt werden. Semiconductor devices illustrated are replaced by a method in which all the connections between the semiconductor chip and connecting beams in a few manufacturing steps are made parallel.
  • Der Halbleiterchip kann ein Speicherchip oder ein anderer" Halbleiterchip sein. Als Speicherchip kommen grundsätzlich alle Halbleiterspeicher in Frage, zB Dynamic-RAM (DRAM), Flash-RRM, Conducting-bridge-RAM (CBRAM), Magnetic-RAM (MRAM), Ferroelektric-RAM (FeRAM), Phase-change-RAM (PCRAM). The semiconductor chip may be a memory chip or another "semiconductor chip. As a memory chip basically all semiconductor memory are suitable, for example, dynamic RAM (DRAM), flash RRM, Conducting-bridge-RAM (CBRAM), Magnetic RAM (MRAM), Ferroelektric RAM (FeRAM), phase-change RAM (PCRAM).
  • Es können mehrere gleichartige oder unterschiedliche Halbleiterchips nebeneinander auf einem Verbindungsträger und somit in einem Halbleiterbauelement angeordnet werden. There may be several similar or different semiconductor chips adjacent to each other on a connection support and are thus arranged in a semiconductor device.
  • Die elektrisch leitfähigen Elemente haben die Aufgabe, eine elektrische Verbindungen zwischen den Kontaktflächen des Halbleiterchips und dem Verbindungsträger herzustellen und zugleich einen bestimmten Abstand zwischen Halbleiterchip und Verbindungsträger zu gewährleisten, der notwendig ist, damit der Raum zwischen Halbleiterchip und Verbindungsträger später vollständig mit Pressmasse für die Schutz-Umhüllung gefüllt werden kann. The electrically conductive elements have the task to make an electrical connections between the contact areas of the semiconductor chips and the connecting beam and at the same time to ensure a certain distance between the semiconductor chip and connecting support which is necessary so that the space between the semiconductor chip and connecting support later completely with molding material for the protective -Umhüllung can be filled. Auf dem Halbleiterchip können weitere elektrisch leitfähige Elemente angeordnet sein, die allein für die Abstandshaltung zwischen Halbleiterchip und Verbindungsträger bestimmt sind, beispielsweise an den Außenkanten des Halbleiterchips. On the semiconductor chip further electrically conductive elements may be arranged, which are intended solely for the spacing between the semiconductor chip and connecting support, for example on the outer edges of the semiconductor chip.
  • Die elektrisch leitfähigen Elemente können aus Metall hergestellt werden. The electrically conductive elements may be made of metal. Beispielsweise können sie aus Gold (Au), Kupfer (Cu), Silber (Ag) oder Aluminium (Al) oder einer Legierung bestehen, die überwiegend eines der genannten Metalle enthält. For example, they may be made of gold (Au), copper (Cu), silver (Ag) or aluminum (Al), or composed of an alloy mainly containing one of the metals mentioned.
  • Die elektrisch leitfähigen Elemente können, sofern sie aus Metall bestehen, auf dem Halbleiterchip gebildet werden, indem auf den Kontaktflächen des Halbleiterchips Bondkontakte mittels Drahtbonden hergestellt werden und der Bonddraht am Bondkontakt abgetrennt wird. The electrically conductive elements, provided they are made of metal, are formed on the semiconductor chip by bonding contacts are made by means of wire bonding on the contact surfaces of the semiconductor chip and the bonding wire is removed at the bond pad. Dieses Verfahren kann für eine Kontaktfläche des Halbleiterchips mehrfach wiederholt werden, so dass mehrere Bondkontakte übereinander erzeugt werden. This process can be repeated multiple times for a contact surface of the semiconductor chip, so that a plurality of bonding pads are superimposed generated.
  • Ein weiteres Verfahren zur Herstellung der elektrisch leitfähigen Elemente besteht in folgenden Schritten: Another method for the preparation of the electrically conductive elements consists in the following steps:
    • – ganzflächiges Aufbringen einer dünnen metallischen Schicht, zB mittels Zerstäubung (PVD) oder Abscheidung aus der Gasphase (CVD), - blanket depositing a thin metallic layer, for example by means of sputtering (PVD), or deposition from the gas phase (CVD),
    • – Strukturierung der dünnen metallischen Schicht durch photolithografische Schritte (Aufbringen, Belichten und Entwickeln von Photolack) und nachfolgendes Ätzen; - structuring the thin metal layer by photolithographic steps (coating, exposure and development of photoresist) and subsequently etching; zB Plasma-Ätzen oder Nass-Ätzen und anschließende Entfernung des Photolackes for example, plasma etching or wet etching and subsequent removal of the photoresist
    • – Aufbringen eines Metalls, beispielsweise mittels elektrogalvanischer Abscheidung bis zur gewünschten Größe der elektrisch leitfähigen Elemente. - depositing a metal, for example by means of electro-galvanic deposition to the desired size of the electrically conductive elements.
  • In einer anderen Ausgestaltung der Erfindung können die elektrisch leitfähigen Elemente aus einem leitfähigen Kunstharz oder leitfähigem Polymer gebildet sein. In another embodiment of the invention, the electrically conductive members made of a conductive resin or conductive polymer can be formed. Zum Erreichen der geforderten Leitfähigkeit ist der Kunstharz oder Polymer durchgängig, also im vollen Volumen, mit leitfähigen Partikeln angereichert. To achieve the required conductivity of the resin or polymer is continuous, that is in the full volume, enriched with conductive particles.
  • Diese elektrisch leitfähigen Elemente können aus elektrisch leitfähigem Kunstharz oder elektrisch leitfähigem Polymer mittels Schablonen-Siebruckverfahren oder im Dispersionsverfahren aufgebracht werden. These electrically conductive members may be applied from an electrically conductive synthetic resin or the electrically conductive polymer by means of template Siebruckverfahren or dispersion process. Anschließend werden die aufgebrachten Strukturen verfestigt, beispielsweise durch eine Wärmebehandlung oder ultraviolettes Licht. Subsequently, the applied structures are solidified, for example by a heat treatment or ultraviolet light.
  • Ein weiteres Verfahren zur Herstellung der elektrisch leitfähigen Elemente besteht in folgenden Schritten: Another method for the preparation of the electrically conductive elements consists in the following steps:
    • – ganzflächiges Aufbringen einer Folie aus leitfähigem Kunststoff oder leitfähigem Polymer auf die Oberfläche des Halbleiterchips - blanket depositing a film of conductive resin or conductive polymer on the surface of the semiconductor chip
    • – Strukturierung der leitfähigen Folie durch photolithografische Schritte (Aufbringen, Belichten und Entwickeln von Photolack) und nachfolgendes Ätzen; - patterning the conductive film by photolithographic steps (coating, exposure and development of photoresist) and subsequently etching; zB Plasma-Ätzen oder Nass-Ätzen for example, plasma etching or wet etching
  • Gemäß einer Ausgestaltung der Erfindung ist der elektrisch leitfähige Verbindungsträger aus Metall gebildet. According to one embodiment of the invention, the electrically conductive connection carrier is formed of metal.
  • Als Metall kommen in Frage vorzugsweise Silber (Ag), Kupfer (Cu) oder Aluminium (Al) oder einer Legierung, die überwiegend eines der genannten Metalle enthält. As the metal in question are preferably silver (Ag), copper (Cu) or aluminum (Al) or an alloy mainly containing one of the metals mentioned.
  • Das thermische Ausdehnungsverhalten der Kombination von Halbleiterchip und metallischem Verbindungsträger ist wesentlich günstiger als das Ausdehnungsverhalten der Kombination von Halbleiterchip und Substrat gemäß dem Stand der Technik, was zu einer verbesserten Zuverlässigkeit des Halbleiterbauelementes führt. The thermal expansion behavior of the combination of the semiconductor chip and a metallic connecting support is significantly more favorable than the expansion behavior of the combination of the semiconductor chip and the substrate according to the prior art, which leads to an improved reliability of the semiconductor device.
  • Der Verbindungsträger wird als ein vorgefertigtes Teil für die Montage des Halbleiterbauelementes verwendet. The connecting support is used as a prefabricated part for the assembly of the semiconductor device.
  • Die Kontaktierung zwischen dem Verbindungsträger und den elektrisch leitfähigen Elementen, soweit diese aus Metall bestehen, erfolgt mittels Ultraschall-Bonden. The contacting between the connecting support and the electrically conductive elements, as far as these are made of metal, by means of ultrasonic bonding.
  • Die Kontaktierung zwischen dem Verbindungsträger und den elektrisch leitfähigen Elementen, soweit diese aus leitfähi gem Kunststoff oder leitfähigem Polymer bestehen, erfolgt mittels elektrisch leitfähigem Kleber. The contacting between the connecting support and the electrically conductive elements, as far as these gem leitfähi from plastic or conductive polymer are made, by means of electrically conductive adhesive.
  • Gemäß einer Ausgestaltung der Erfindung kann die elektrisch isolierende Schicht aus Kunstharz gebildet sein. According to one embodiment of the invention, the electrically insulating layer may be formed of synthetic resin.
  • Die elektrisch isolierende Schicht kann in folgenden Schritten hergestellt werden: The electrically insulating layer may be formed in the following steps:
    • – ganzflächiges Aufbringen eines flüssigen Kunstharzes auf den Verbindungsträger, beispielsweise im Schleuder- oder Sprühverfahren und anschließendes dem Aushärten des Harzes - whole-area application of a liquid resin compound on the carrier, for example in spinning or spraying, followed by curing of the resin
    • – Strukturierung der Harzschicht durch photolithografische Schritte (Aufbringen, Belichten und Entwickeln von Photolack) und nachfolgendes Ätzen; - patterning the resin layer by photolithographic steps (coating, exposure and development of photoresist) and subsequently etching; zB Plasma-Ätzen oder Nass-Ätzen und anschließende Entfernung des Photolackes for example, plasma etching or wet etching and subsequent removal of the photoresist
  • Die elektrisch isolierende Schicht kann in einer anderen Ausgestaltung der Erfindungsmeldung als ein vorgefertigtes Teil für die Montage des Halbleiterbauelementes verwendet werden, welches bereits die Durchbrüche für die Lotkugeln aufweist. The electrically insulating layer may be used in another embodiment of the invention message as a prefabricated part for the mounting of the semiconductor component, which already has the openings for the solder balls. In diesem Fall besteht die elektrisch isolierende Schicht aus Kunstharz, welches aus mechanischen Gründen mit Glasfasern verstärkt ist. In this case, the electrically insulating layer of synthetic resin which is reinforced with glass fibers for mechanical reasons. Die elektrisch isolierende Schicht wird auf den Verbindungsträger durch Kleben aufgebracht. The electrically insulating layer is applied to the connecting beams by gluing.
  • Dazu kann die elektrisch isolierende Schicht in der Vorfertigung einseitig mit einer klebenden Beschichtung versehen werden. For this purpose the electrically insulating layer can be provided in the prefabrication on one side with an adhesive coating. Alternativ dazu kann zwischen der elektrisch isolierenden Schicht und dem Verbindungsträger eine Klebefolie verwendet werden. Alternatively, may be used an adhesive film between the electrically insulating layer and the connection support.
  • Gemäß einer anderen Ausgestaltung der Erfindung ist die Schutz-Umhüllung aus Epoxidharz-Pressmasse gebildet, die Füllstoffe zur Angleichung der thermischen Ausdehnungskoeffizienten zwischen Halbleiterchip und Epoxidharz-Pressmasse enthält. According to another embodiment of the invention, the protective coating of epoxy resin molding compound is formed, the fillers contains the approximation of the coefficient of thermal expansion between the semiconductor chip and epoxy resin molding compound.
  • Ein Halbleiterbauelement wird gemäß einem Aspekt der Erfindung hergestellt, indem auf den Kontaktflächen des Halbleiterchips elektrisch leitfähige Elemente angeordnet werden und diese mit dem Verbindungsträger kontaktiert werden wird und die Anordnung von Halbleiterchip, elektrisch leitfähigen Elementen und Verbindungsträger mit einer Schutz-Umhüllung versehen wird, welche die Außenseite des Verbindungsträgers freilässt. A semiconductor device is manufactured according to one aspect of the invention, by electrically conductive elements are disposed on the contact surfaces of the semiconductor chips and this will be contacted with the connecting support and the arrangement of the semiconductor chip, electrically conductive elements and connecting support is provided with a protective covering which the leaves open outside of the connecting carrier. Auf dieser Außenseite des Verbindungsträgers wird eine elektrisch isolierende Schicht aufgebracht, die Durchbrüche enthält, in denen Lotkugeln angeordnet und elektrisch leitend mit dem Verbindungsträger verbunden werden. On this outer side of the connecting beam, an electrically insulating layer is applied that contains the apertures in which solder balls arranged and are electrically conductively connected to the connecting beam. Die Lotkugeln dienen der elektrischen und mechanischen Verbindung des Halbleiterbauelementes mit einem übergeordneten System, beispielsweise der Leiterplatte einer elektronischen Baugruppe. The solder balls serve to electrically and mechanically connecting the semiconductor device with a higher level system, for example the printed circuit board of an electronic assembly.
  • Die Herstellung eines Halbleiterbauelementes kann sowohl einzeln als auch im Verbund erfolgen. The production of a semiconductor device can be done both individually and in combination. Bei Verbundfertigung sind Verbindungsträger und elektrisch isolierende Schicht sind so beschaffen, dass mehrere matrixartig nebeneinander angeordnete Halbleiterchips in einem Arbeitsgang jeweils gemeinsam bearbeitet werden und erst nach dem Herstellen der Schutz-Umhüllung, dem Aufbringen der elektrisch isolierenden Schicht und dem Anordnen der Lotkugeln in einzelne Halbleiterbauelemente vereinzelt werden. In composite fabrication are connecting support and electrically insulating layer are such that a plurality of matrix-like arranged side by side semiconductor chips are each processed together in a single operation and only after the production of the protective sheath, the application of the electrically insulating layer and placing the solder balls into individual semiconductor devices sporadically become.
  • Ausführungsbeispiele der Erfindung sind in den Figuren dargestellt und werden im Folgenden näher erläutert. Embodiments of the invention are illustrated in the figures and are explained in more detail below. In den Figuren werden, soweit sinnvoll, gleiche oder ähnliche Elemente mit identischen Bezugszeichen versehen. , Like or similar elements with identical reference numerals where appropriate in the figures provided. Die Figuren sind schematisch und nicht unbedingt maßstabsgetreu. The figures are schematic and not necessarily to scale.
  • Es zeigen Show it
  • 1 1 eine Querschnittsansicht eines Halbleiterbauelements gemäß dem Stand der Technik; a cross-sectional view of a semiconductor device according to the prior art;
  • 2 2 eine Querschnittsansicht eines Halbleiterbauelements gemäß dem Stand der Technik; a cross-sectional view of a semiconductor device according to the prior art;
  • 3 3 eine Querschnittsansicht eines Halbleiterbauelements gemäß dem Stand der Technik; a cross-sectional view of a semiconductor device according to the prior art;
  • 4 4 eine Querschnittsansicht eines Halbleiterbauelements gemäß einem Ausführungsbeispiel der Erfindung; a cross sectional view of a semiconductor device according to an embodiment of the invention;
  • 5 5 bis to 10 10 den Ablauf der Herstellung eines Halbleiterbauelementes gemäß einem Ausführungsbeispiel dieser Erfindung. the expiry of manufacturing a semiconductor device according to an embodiment of this invention.
  • 1 1 zeigt den Aufbau eines Halbleiterbauelementes shows the structure of a semiconductor device 100 100 mit Lead Frame gemäß dem Stand der Technik. with lead frame according to the prior art. Ein Halbleiterchip A semiconductor chip 101 101 ist auf einem metallischen Lead Frame is on a metallic lead frame 102 102 aufgebracht. applied. Die Kontaktflächen des Halbleiterchips The contact areas of the semiconductor chip 101 101 sind mittels Drahtbondverbindungen are by means of wire bond connections 103 103 mit den zugeordneten Kontaktfingern des Lead Frame with the associated contact fingers of the lead frame 102 102 verbunden. connected. Der Halbleiterchip The semiconductor chip 101 101 und der Lead Frame and the leadframe 102 102 sind in einem Halbleiterchip-Gehäuse are in a semiconductor chip package 105 105 angeordnet. arranged. Der Lead Frame The leadframe 102 102 verläuft vom Inneren des Gehäuses extends from the interior of the housing 105 105 nach außen in Form von metallischen Anschlussstiften outwardly in the form of metallic pins 106 106 , die sich an den Seiten des Halbleiterchip-Gehäuses That on the sides of the semiconductor chip package 105 105 befinden. are located.
  • 2 2 zeigt der Aufbau eines BGA-Halbleiterbauelements shows the structure of a BGA semiconductor device 200 200 gemäß dem Stand der Technik. according to the prior art. Ein Halbleiterchip A semiconductor chip 201 201 ist mit seiner aktiven Seite nach oben auf einem Substrat is with its active face up on a substrate 202 202 aufgebracht und mittels Drahtbondverbindungen and applied by means of wire bond connections 203 203 elektrisch mit dem Substrat electrically connected to the substrate 202 202 verbunden. connected. Die Unterseite des Substrates The underside of the substrate 202 202 enthält Kontaktflächen, auf denen die Lotkugeln contains contact surfaces on which the solder balls 204 204 angeordnet sind. are arranged. Der Halbleiterchip The semiconductor chip 201 201 ist in einem Gehäuse is in a housing 205 205 angeordnet, welches auf einer Seite durch das Substrat arranged, which on one side by the substrate 202 202 begrenzt wird. is limited.
  • 3 3 zeigt den Aufbau eines anderen BGA-Halbleiterbauelements shows the construction of another BGA type semiconductor device 300 300 gemäß dem Stand der Technik. according to the prior art. Der Halbleiterchip The semiconductor chip 301 301 ist mit seiner aktiven Seite nach unten mittels Lotbumps with its active face downwards by means of solder bumps 303 303 elektrisch mit dem Substrat electrically connected to the substrate 302 302 verbunden. connected. Die Unterseite des Substrates The underside of the substrate 302 302 enthält Kontaktflächen, auf denen Lotkugeln contains contact surfaces on which solder balls 304 304 angeordnet sind. are arranged. Der Halbleiterchip The semiconductor chip 301 301 ist in einem Gehäuse is in a housing 305 305 angeordnet, welches auf einer Seite durch das Substrat arranged, which on one side by the substrate 302 302 begrenzt wird. is limited.
  • 4 4 zeigt ein Halbleiterbauelement shows a semiconductor device 400 400 gemäß einem Ausführungsbeispiel der Erfindung. according to an embodiment of the invention.
  • Das Halbleiterbauelement The semiconductor device 400 400 weist mindestens einen Halbleiterchip has at least one semiconductor chip 401 401 auf, der Kontaktflächen on the contact surfaces 409 409 aufweist, die in einem vorgegebenen geometrischen Raster auf dem Halbleiterchip having, in a predetermined geometric grid on the semiconductor chip 401 401 angeordnet sind. are arranged. Die Kontaktflächen des Halbleiterchips The contact areas of the semiconductor chip 401 401 sind durch das Layout des Halbleiterchips are protected by the layout of the semiconductor chip 401 401 vorgegeben. specified. Sie können jedoch alternativ mittels einer Umverdrahtungsebene However, you can alternatively by means of a redistribution layer 407 407 , bestehend aus einer Kombination von Isolierschichten und strukturierten Leiterzügen, anders angeordnet werden. Are composed, arranged differently from a combination of insulating layers and patterned conductor coatings.
  • Das Halbleiterbauelement The semiconductor device 400 400 weist einen elektrisch leitfähigen Verbindungsträger comprises an electrically conductive connecting beams 402 402 auf, wobei der Verbindungsträger , wherein the connecting support 402 402 Kontaktfinger aufweist, die entsprechend dem geometrischen Raster der Kontaktflächen des Halbleiterchips Contact fingers having corresponding to the geometric pattern of the contact areas of the semiconductor chip 401 401 angeordnet sind, sowie mehrere elektrisch leitfähige Elemente are arranged, and a plurality of electrically conductive elements 403 403 , die zwischen einem Kontaktfinger des Verbindungsträgers Between a contact finger of the connecting support 402 402 und einer Kontaktfläche des Halbleiterchips and a contact surface of the semiconductor chip 401 401 angeordnet sind und eine elektrische Verbindung herstellen und/oder der Abstandshaltung zwischen Halbleiterchip are disposed and make electrical connection and / or the spacing between the semiconductor chip 401 401 und Verbindungsträger and connection support 402 402 dienen. serve. Auf dem Verbindungsträger On the connecting carrier 402 402 (anders ausgedrückt: auf der dem Halbleiterchip gegenüberliegenden Seite des Verbindungsträgers) ist eine elektrisch isolierende Schicht (auch bezeichnet als Isolierschicht) (In other words on the side opposite to the semiconductor chip side of the connecting support) is an electrically insulating layer (also referred to as an insulating layer) 404 404 mit Durchbrüchen with openings 907 907 angebracht, die zur Aufnahme der Lotkugeln mounted, for receiving the solder balls 405 405 dienen, wobei die Lotkugeln are used, wherein the solder balls 405 405 mit dem Verbindungsträger to the connecting beam 402 402 elektrisch leitend verbunden sind. are electrically conductively connected. Das Gehäuse des Halbleiterbauelementes The housing of the semiconductor component 400 400 weist eine formschlüssige Schutz-Umhül lung has a form-fitting protection Umhül development 406 406 auf, wobei die Isolierschicht , wherein the insulating layer 404 404 mit den Lotkugeln with the solder balls 405 405 die Begrenzung des Halbleiterbauelementes the boundary of the semiconductor component 400 400 auf einer Seite darstellt. is on one side.
  • Die Lotkugeln the solder balls 405 405 dienen der elektrischen und mechanischen Verbindung des Halbleiterbauelementes are used for electrical and mechanical connection of the semiconductor component 400 400 mit einem übergeordneten System, beispielsweise der Leiterplatte einer elektronischen Baugruppe. with a host system, such as the printed circuit board of an electronic assembly.
  • Die Herstellung eines Halbleiterbauelementes The production of a semiconductor device 400 400 kann auch im Verbund erfolgen: Verbindungsträger can also be done in combination: connecting beams 402 402 und elektrisch isolierende Schicht and electrically insulating layer 404 404 sind in diesem Fall so beschaffen, dass mehrere matrixartig nebeneinander angeordnete Halbleiterchips in this case such that a plurality of matrix-like arranged side by side semiconductor chips 401 401 in einem Arbeitsgang jeweils gemeinsam bearbeitet werden und erst nach dem Herstellen der Schutz-Umhüllung are each processed together in a single operation and only after the production of the protective sheath 406 406 in einzelne Halbleiterbauelemente into individual semiconductor devices, 400 400 vereinzelt werden. are separated.
  • 5 5 zeigt einen Halbleiterchip shows a semiconductor chip 501 501 auf welchem direkt oder über eine Umverdrahtungsebene on which directly or via a redistribution layer 502 502 die Kontaktflächen des Halbleiterchips angeordnet sind. the contact surfaces of the semiconductor chips are arranged.
  • 6 6 zeigt den Halbleiterchip shows the semiconductor chip 601 601 auf welchem direkt oder über eine Umverdrahtungsebene on which directly or via a redistribution layer 602 602 elektrisch leitfähigen Elementen electrically conductive members 603 603 auf den Kontaktflächen des Halbleiterchips on the contact areas of the semiconductor chip 601 601 aufgebracht wurden. were applied.
  • 7 7 zeigt den Halbleiterchip shows the semiconductor chip 701 701 mit der Umverdrahtungsebene with the redistribution layer 702 702 nach dem Aufbringen eines elektrisch leitfähigen Verbindungsträgers after the application of an electrically conductive connecting support 704 704 , der mit den elektrisch leitfähigen Elementen , The one with the electrically conductive members 703 703 kontaktiert wird. is contacted.
  • Danach werden, wie in Thereafter, as in 8 8th dargestellt, der Halbleiterchip shown, the semiconductor chip 801 801 mit der Umverdrahtungsebene with the redistribution layer 802 802 , die elektrisch leitfähigen Elemente , The electrically conductive members 803 803 und der Verbindungsträger and the connecting support 804 804 von einer Schutz-Umhüllung by a protective envelope 805 805 eingeschlossen, wobei die vom Halbleiterchip abgewandte Seite des Verbindungsträgers included, wherein the side facing away from the semiconductor chip side of the connecting support 804 804 frei bleibt. remains free. Die Nachfolgend wird gemäß The following, according to 9 9 auf die frei gebliebene Seite des Verbindungsträgers to the remaining free side of the connection carrier 904 904 der Anordnung des Halbleiterchips the arrangement of the semiconductor chip 901 901 , der Umverdrahtungsebene , The redistribution layer 902 902 , den elektrisch leitfähigen Elementen The electrically conductive members 903 903 und dem Verbindungsträger and the connecting beam 904 904 , eingeschlossen von der Schutz-Umhüllung , Enclosed by the protective sheath 905 905 , eine elektrisch isolierende Schicht , An electrically insulating layer 906 906 aufgebracht, in welche Durchbrüche applied, in which breakthroughs 907 907 eingebracht werden. are introduced. Alternative kann eine elektrisch isolierende Schicht Alternatively, an electrically insulating layer 904 904 aufgebracht werden, die bereits Durchbrüche be applied, which already breakthroughs 907 907 enthält. contains.
  • Danach werden gemäß After that, according to 10 10 auf die Anordnung des Halbleiterchips the arrangement of the semiconductor chip 1001 1001 , der Umverdrahtungsebene , The redistribution layer 1002 1002 , den elektrisch leitfähigen Elementen The electrically conductive members 1003 1003 und dem Verbindungsträger and the connecting beam 1004 1004 , eingeschlossen von der Schutz-Umhüllung , Enclosed by the protective sheath 1005 1005 , eine elektrisch isolierende Schicht , An electrically insulating layer 1006 1006 aufgebracht, in deren Durchbrüchen applied, in whose perforations 907 907 die Lotkugeln the solder balls 1008 1008 angeordnet und mit dem Verbindungsträger and connected to the connecting beams 1004 1004 elektrisch kontaktiert werden. are electrically contacted.
  • 1 1
  • 100 100
    Halbleiterbauelement mit Verbindungsträger Semiconductor device with a connecting carrier
    101 101
    Halbleiterchip Semiconductor chip
    102 102
    Lead Frame leadframe
    103 103
    Drahtbondverbindungen Wire bonds
    104 104
    Verbindungsträger-Kontaktfinger Connection carrier contact fingers
    105 105
    Gehäuse casing
    106 106
    Verbindungsträger-Anschlussstifte Connection support pins
  • 2 2
  • 200 200
    BGA-Halbleiterbauelement BGA semiconductor device
    201 201
    Halbleiterchip Semiconductor chip
    202 202
    Substrat substratum
    203 203
    Drahtbondverbindungen Wire bonds
    204 204
    Lotkugeln solder balls
    205 205
    Gehäuse casing
  • 3 3
  • 300 300
    BGA-Halbleiterbauelement BGA semiconductor device
    301 301
    Halbleiterchip Semiconductor chip
    302 302
    Substrat substratum
    303 303
    Lotbumps solder bumps
    304 304
    Lotkugeln solder balls
    305 305
    Gehäuse casing
  • 4 4
  • 400 400
    Halbleiterbauelement Semiconductor device
    401 401
    Halbleiterchip Semiconductor chip
    402 402
    Verbindungsträger-Kontaktfinger Connection carrier contact fingers
    403 403
    elektrisch leitfähige Elemente electrically conductive members
    404 404
    elektrisch isolierende Schicht electrically insulating layer
    405 405
    Lotkugeln solder balls
    406 406
    Schutz-Umhüllung Protective sheath
    407 407
    Passivierungsschicht oder Umverdrahtungsebene Passivation layer or redistribution layer
    409 409
    Kontaktflächen des Halbleiterchips Contact areas of the semiconductor chip
  • 5 5
  • 501 501
    Halbleiterchip Semiconductor chip
    502 502
    Passivierungsschicht oder Umverdrahtungsebene Passivation layer or redistribution layer
  • 6 6
  • 601 601
    Halbleiterchip Semiconductor chip
    602 602
    Passivierungsschicht oder Umverdrahtungsebene Passivation layer or redistribution layer
    603 603
    elektrisch leitfähige Elemente electrically conductive members
  • 7 7
  • 701 701
    Halbleiterchip Semiconductor chip
    702 702
    Passivierungsschicht oder Umverdrahtungsebene Passivation layer or redistribution layer
    703 703
    elektrisch leitfähige Elemente electrically conductive members
    704 704
    Verbindungsträger-Kontaktfinger Connection carrier contact fingers
  • 8 8th
  • 801 801
    Halbleiterchip Semiconductor chip
    802 802
    Passivierungsschicht oder Umverdrahtungsebene Passivation layer or redistribution layer
    803 803
    elektrisch leitfähige Elemente electrically conductive members
    804 804
    Verbindungsträger-Kontaktfinger Connection carrier contact fingers
    805 805
    Schutz-Umhüllung Protective sheath
  • 9 9
  • 901 901
    Halbleiterchip Semiconductor chip
    902 902
    Passivierungsschicht oder Umverdrahtungsebene Passivation layer or redistribution layer
    903 903
    elektrisch leitfähige Elemente electrically conductive members
    904 904
    Verbindungsträger-Kontaktfinger Connection carrier contact fingers
    905 905
    Schutz-Umhüllung Protective sheath
    906 906
    elektrisch isolierende Schicht electrically insulating layer
    907 907
    Durchbrüche breakthroughs
  • 10 10
  • 1001 1001
    Halbleiterchip Semiconductor chip
    1002 1002
    Passivierungsschicht oder Umverdrahtungsebene Passivation layer or redistribution layer
    1003 1003
    elektrisch leitfähige Elemente electrically conductive members
    1004 1004
    Verbindungsträger-Kontaktfinger Connection carrier contact fingers
    1005 1005
    Schutz-Umhüllung Protective sheath
    1006 1006
    elektrisch isolierende Schicht electrically insulating layer
    1008 1008
    Lotkugeln solder balls
    1009 1009
    Kontaktflächen des Halbleiterchips Contact areas of the semiconductor chip

Claims (19)

  1. Halbleiterbauelement, • mit mindestens einem Halbleiterchip ( Semiconductor component, • (with at least one semiconductor chip 401 401 ), welcher Kontaktflächen ( ), Which contact surfaces ( 409 409 ) aufweist, • mit einem elektrisch leitfähigen Verbindungsträger ( ) Which • with an electrically conductive connecting support ( 402 402 ), welcher Kontaktfinger aufweist ( ), Which has contact fingers ( 402 402 ), die entsprechend den Kontaktflächen ( ), The (corresponding to the contact surfaces 409 409 ) des Halbleiterchips ( () Of the semiconductor chip 401 401 ) angeordnet sind, • mit mehreren elektrisch leitfähigen Elementen ( ) Are located, • (with a plurality of electrically conductive members 403 403 ), die zwischen einem Kontaktfinger des Verbindungsträgers ( ), The (between a contact finger of the connecting support 402 402 ) und einer Kontaktfläche ( ) And a contact surface ( 409 409 ) des Halbleiterchips ( () Of the semiconductor chip 401 401 ) angeordnet sind und eine elektrische Verbindung sowie eine mechanische Abstandshaltung herstellen, • mit einer auf dem Verbindungsträger ( ) Are disposed and make electrical connection and a mechanical spacing, • with a (on the connecting beam 402 402 ) aufgebrachten elektrisch isolierenden Schicht ( ) Applied electrically insulating layer ( 404 404 ) mit Durchbrüchen ( ) (With openings 907 907 ), • mit Lotkugeln ( ) • (with solder balls 405 405 ), die in den Durchbrüchen ( ) Which (in the apertures 907 907 ) der elektrisch isolierenden Schicht ( () Of the electrically insulating layer 404 404 ) angeordnet sind und mit dem Verbindungsträger ( ) Are arranged, and (to the connecting beam 402 402 ) elektrisch leitend verbunden sind, • mit einer Schutz-Umhüllung ( ) Are electrically conductively connected, • (with a protective envelope 406 406 ) des Halbleiterchips ( () Of the semiconductor chip 401 401 ). ).
  2. Halbleiterbauelement gemäß Anspruch 1, wobei der Halbleiterchip ( A semiconductor device according to claim 1, wherein the semiconductor chip ( 401 401 ) als Speicherchip ausgebildet ist. ) Is formed as memory chip.
  3. Halbleiterbauelement gemäß einem der Ansprüche 1 bis 2, wobei die elektrisch leitfähigen Elemente ( A semiconductor device according to any one of claims 1 to 2, wherein the electrically conductive elements ( 403 403 ) aus Metall gebildet sind. ) Are formed from metal.
  4. Halbleiterbauelement gemäß Anspruch 3, wobei die elektrisch leitfähigen Elemente ( A semiconductor device according to claim 3, wherein the electrically conductive elements ( 403 403 ) aus den Metallen Gold oder Silber oder Kupfer oder Aluminium oder aus einer Legierung mit einem dieser Metalle bestehen. ) Consist of the metals gold or silver or copper or aluminum or from an alloy having one of these metals.
  5. Halbleiterbauelement gemäß einem der Ansprüche 1 bis 2, wobei die elektrisch leitfähigen Elemente ( A semiconductor device according to any one of claims 1 to 2, wherein the electrically conductive elements ( 403 403 ) aus leitfähigem Kunstharz oder Polymer gebildet sind. ) Are formed of conductive resin or polymer.
  6. Halbleiterbauelement gemäß einem der Ansprüche 3 bis 5, mit weiteren elektrisch leitfähigen Elementen ( A semiconductor device according to any one of claims 3 to 5, (with the further electrically conductive elements 403 403 ), welche zwischen Verbindungsträger ( ) Which (connection between carrier 402 402 ) und Halbleiterchip ( () And the semiconductor chip 401 401 ) angeordnet sind und keine elektrische Verbindung, sondern allein eine mechanische Abstandshaltung herstellen. ) Are arranged and produced no electrical connection, but only a mechanical spacing.
  7. Halbleiterbauelement gemäß einem der Ansprüche 1 bis 6, wobei der elektrisch leitfähige Verbindungsträger ( A semiconductor device according to any one of claims 1 to 6, wherein the electrically conductive connecting supports ( 402 402 ) aus Metall gebildet ist. ) Is formed of metal.
  8. Halbleiterbauelement gemäß Anspruch 7, wobei der elektrisch leitfähige Verbindungsträger ( A semiconductor device according to claim 7, wherein the electrically conductive connecting supports ( 402 402 ) aus Gold oder Silber oder Kupfer oder Aluminium oder aus einer Legierung mit einem dieser Metalle besteht. ) Is made of gold or silver or copper or aluminum or from an alloy having one of these metals.
  9. Halbleiterbauelement gemäß einem der Ansprüche 1 bis 8, wobei die elektrisch isolierende Schicht ( A semiconductor device according to any one of claims 1 to 8, wherein the electrically insulating layer ( 404 404 ) aus reinem oder glasfaserverstärktem Kunstharz gebildet ist. ) Is formed of pure or glass fiber reinforced synthetic resin.
  10. verfahren zum Herstellen eines Halbleiterbauelementes mit mindestens einem Halbleiterchip ( A method of manufacturing a semiconductor device having at least one semiconductor chip ( 401 401 ), welcher Kontaktflächen ( ), Which contact surfaces ( 409 409 ) aufweist, mit einem elektrisch leitfähigen Verbindungsträger ( ) Which (with an electrically conductive connecting beams 402 402 ), welcher Kontaktfinger aufweist ( ), Which has contact fingers ( 402 402 ), die entsprechend den Kontaktflächen ( ), The (corresponding to the contact surfaces 409 409 ) des Halbleiterchips ( () Of the semiconductor chip 401 401 ) angeordnet sind, • mit mehreren elektrisch leitfähigen Elementen ( ) Are located, • (with a plurality of electrically conductive members 403 403 ), die zwischen einem Kontaktfinger des Verbindungsträgers ( ), The (between a contact finger of the connecting support 402 402 ) und einer Kontaktfläche ( ) And a contact surface ( 409 409 ) des Halblei terchips ( ) Of the semiconductor chips ( 401 401 ) angeordnet sind und eine elektrische Verbindung sowie eine mechanische Abstandshaltung herstellen, • mit einer auf dem Verbindungsträger ( ) Are disposed and make electrical connection and a mechanical spacing, • with a (on the connecting beam 402 402 ) aufgebrachten elektrisch isolierenden Schicht ( ) Applied electrically insulating layer ( 404 404 ) mit Durchbrüchen ( ) (With openings 907 907 ), • mit Lotkugeln ( ) • (with solder balls 405 405 ), die in den Durchbrüchen ( ) Which (in the apertures 907 907 ) der elektrisch isolierenden Schicht ( () Of the electrically insulating layer 404 404 ) angeordnet sind und mit dem Verbindungsträger ( ) Are arranged, and (to the connecting beam 402 402 ) elektrisch leitend verbunden sind, • mit einer Schutz-Umhüllung ( ) Are electrically conductively connected, • (with a protective envelope 406 406 ) des Halbleiterchips ( () Of the semiconductor chip 401 401 ), wobei – auf den Kontaktflächen ( ), Wherein - (on the contact surfaces 409 409 ) des Halbleiterchips ( () Of the semiconductor chip 401 401 ) die elektrisch leitenden Elemente ( ) The electrically conducting elements ( 403 403 ) gebildet werden – der Halbleiterchip ( ) Are formed - the semiconductor chip ( 401 401 ) auf dem Verbindungsträger ( ) (On the connecting beam 402 402 ) angeordnet wird, – die Kontaktfinger des Verbindungsträgers ( ) Is placed, - (the contact fingers of the connection support 402 402 ) mit den elektrisch leitenden Elementen ( ) (With the electrically conductive elements 403 403 ) verbunden werden, – der Halbleiterchip, mit den elektrisch leitenden Elementen ( be) connected, - the semiconductor chip (with the electrically conductive elements 403 403 ) und dem Verbindungsträgers ( ) And the connection carrier ( 402 402 ) mit einer Schutz-Umhüllung ( ) (With a protective envelope 406 406 ) umgeben wird, die die vom Halbleiterchip ( ) Is surrounded, the (by the semiconductor chip 401 401 ) angewandte Seite des Verbindungsträgers ( ) Applied side of the connection carrier ( 402 402 ) freilässt – auf dem Verbindungsträger ( ) Leaves free - on the connecting carrier ( 402 402 ) eine elektrisch isolierende Schicht ( ) An electrically insulating layer ( 404 404 ) angeordnet wird, – die Lotkugeln ( ) Is arranged, - the solder balls ( 405 405 ) in den Durchbrüchen ( ) (In the apertures 907 907 ) der elektrisch isolierenden Schicht ( () Of the electrically insulating layer 404 404 ) angeordnet und elektrisch leitend mit dem Verbindungsträger ( ) And electrically conductive (to the connecting beam 402 402 ) verbunden werden. ) get connected.
  11. Verfahren gemäß Anspruch 10, wobei die elektrisch leitenden Elemente ( A method according to claim 10, wherein the electrically conductive elements ( 403 403 ) auf der Kontaktfläche ( ) (On the contact surface 409 409 ) des Halbleiterchips ( () Of the semiconductor chip 401 401 ) durch Drahtbonden und nachfolgendes Abtrennen des Drahtes am Bondkontakt hergestellt werden. ) Are produced by wire bonding, and subsequently separating the wire at the bonding pad.
  12. Verfahren gemäß Anspruch 11, wobei das Drahtbonden für jede Kontaktfläche ( The method of claim 11, wherein said wire bonding (for each contact surface 409 409 ) ein- oder mehrmals wiederholt wird. mono-) or is repeated several times.
  13. verfahren gemäß Anspruch 10, wobei die elektrisch leitenden Elemente ( A method according to claim 10, wherein the electrically conductive elements ( 403 403 ) durch eine ganzflächige Metallisierung des Halbleiterchips ( ) (By a full-area metallisation of the semiconductor chip 401 401 ), eine photolithografische Strukturierung und eine galvanische Verstärkung der metallischen Strukturen hergestellt werden. ), A photolithographic patterning and a galvanic reinforcement of the metallic structures are produced.
  14. Verfahren gemäß Anspruch 10, wobei die elektrisch leitenden Elemente ( A method according to claim 10, wherein the electrically conductive elements ( 403 403 ) durch das Aufbringen von leitfähigen Kunstharz oder Polymeren mittels Siebdruck- oder Dispersionsverfahren strukturiert und anschließend verfestigt werden. ) Structured by applying conductive resin or polymer by means of screen printing or dispersion method and then solidified.
  15. Verfahren gemäß Anspruch 10, wobei die elektrisch leitenden Elemente ( A method according to claim 10, wherein the electrically conductive elements ( 403 403 ) durch das ganzflächige Aufkleben einer leitfähigen Folie aus Kunststoff und deren nachfolgender photolithografischer Strukturierung hergestellt werden. ) Are prepared by the whole-area adhesive bonding of a conductive film made of plastic and their subsequent photolithographic patterning.
  16. Verfahren gemäß einem der Ansprüche 10 bis 14, wobei die elektrisch leitenden Elemente ( A method according to any one of claims 10 to 14, wherein the electrically conductive elements ( 403 403 ) mittels Ultraschall-Bonden mit dem Verbindungsträger ( ) By means of ultrasonic bonding (with the connecting beams 402 402 ) verbunden werden. ) get connected.
  17. Verfahren gemäß einem der Ansprüche 15 bis 16, wobei die elektrisch leitenden Elemente ( A method according to any of claims 15 to 16, wherein the electrically conductive elements ( 403 403 ) mittels elektrisch leitfähigem Kleber mit dem Verbindungsträger ( ) By means of electrically conductive adhesive (to the connecting beam 402 402 ) kontaktiert werden. ) To be contacted.
  18. Verfahren gemäß einem der Ansprüche 10 bis 17, wobei die elektrisch isolierende Schicht ( A method according to any one of claims 10 to 17, wherein the electrically insulating layer ( 404 404 ) mittels Schleuder- oder Sprühverfahren auf den Verbindungsträger ( ) (On the connecting beam by means of spin or spray 402 402 ) aufgebracht wird und die Durchbrüche ( ) Is applied and the openings ( 907 907 ) für die Lotkugeln ( ) (For the solder balls 405 405 ) mittels photolithografischer Strukturierung gebildet werden. ) Are formed by photolithographic patterning.
  19. Verfahren gemäß einem der Ansprüche 10 bis 17, wobei die elektrisch isolierende Schicht ( A method according to any one of claims 10 to 17, wherein the electrically insulating layer ( 404 404 ) mit vorhandenen Durchbrüchen ( ) (With existing apertures 907 907 ) auf den Verbindungsträger ( ) (On the connecting carrier 402 402 ) aufgeklebt wird. ) Is glued.
DE102006006825A 2006-02-14 2006-02-14 Semiconductor component e.g. ball grid array semiconductor component, has semiconductor chip with protective casing, and soldering ball arranged in recess of electrical insulating layer and connected with connecting carrier Ceased DE102006006825A1 (en)

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