DE102004064102B4 - Component arrangement with planar transformer, includes dielectric layer which is provided on semiconductor body to electrically isolates primary and secondary windings of planar transformer from one another - Google Patents

Component arrangement with planar transformer, includes dielectric layer which is provided on semiconductor body to electrically isolates primary and secondary windings of planar transformer from one another

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Publication number
DE102004064102B4
DE102004064102B4 DE200410064102 DE102004064102A DE102004064102B4 DE 102004064102 B4 DE102004064102 B4 DE 102004064102B4 DE 200410064102 DE200410064102 DE 200410064102 DE 102004064102 A DE102004064102 A DE 102004064102A DE 102004064102 B4 DE102004064102 B4 DE 102004064102B4
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DE
Germany
Prior art keywords
winding
winding section
section
primary
semiconductor body
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Active
Application number
DE200410064102
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German (de)
Inventor
Dr. Strzalkowski Bernhard
Martin Feldtkeller
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Infineon Technologies AG
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Infineon Technologies AG
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Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE200410064102 priority Critical patent/DE102004064102B4/en
Priority claimed from DE200410036139 external-priority patent/DE102004036139B4/en
Application granted granted Critical
Publication of DE102004064102B4 publication Critical patent/DE102004064102B4/en
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Anticipated expiration legal-status Critical

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/34Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F19/00Fixed transformers or mutual inductances of the signal type
    • H01F19/04Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/28Coils; Windings; Conductive connections
    • H01F27/2804Printed windings
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227Inductive arrangements or effects of, or between, wiring layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/28Coils; Windings; Conductive connections
    • H01F27/2804Printed windings
    • H01F2027/2809Printed windings on stacked layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The planar transformer includes vertically spaced apart primary and secondary windings (40,30). A dielectric layer (20) provided on the semiconductor body (10), that electrically isolates the primary and secondary windings of planar transformer from one another.

Description

  • The present invention relates to a device arrangement with a planar transformer.
  • A device arrangement with a planar transistor is for example in the DE 102 32 642 A1 described. 1 shows such a known component arrangement in side view ( 1a ), in plan view of the planar windings ( 1b ) and in the electrical equivalent circuit diagram ( 1c ).
  • In this component arrangement is on a semiconductor body 110 a dielectric layer 120 arranged, which is a primary winding 140 and a secondary winding 130 of a planar transformer electrically isolated from each other. The secondary winding 130 is for example connected to non-illustrated, integrated circuit components in the semiconductor body. The primary winding may be connected to other circuit components in the same semiconductor body 110 or in another semiconductor body (not shown). The circuit components to which the primary winding 140 is connected, form in particular a transmission circuit and the components to which the secondary winding is connected, in particular form a receiving circuit for a data transmission device, in which the transformer serves as an inductive coupling element between the transmitter and receiver and at the same time as a potential barrier between transmitter and receiver.
  • The primary winding 140 and the secondary winding 130 are each a conductor loop with several turns in each one (metallization) level of the dielectric layer 120 arranged to form a planar transformer without transformer core, which is referred to below as a coreless transformer (Coreless Transformer).
  • In the equivalent circuit diagram according to 1c C140 and C130 denote the capacities of the primary winding 140 and the secondary winding 130 , each between terminals 140_1 . 140_2 respectively. 130_1 . 130_2 the respective winding 140 . 130 are effective. R140 and R130 denote the ohmic resistances of the primary winding 140 and the secondary winding 130 , and with L140 and L130 are the inductances of the primary winding and the secondary winding 130 designated. The coupling factor k between the primary coil is smaller than 1, k · L140 denotes the primary-side coupling inductance of the transformer in the equivalent circuit, and k · L130 denotes the secondary-side coupling inductance of the transformer. (1-k) · L140 or (1-k) · L130 designates the coupling factor-dependent leakage inductances. With Csub / 2 are in 1c parasitic capacitances referred to, resulting from a capacitive coupling between the secondary winding 130 and the semiconductor body.
  • Due to parasitic effects is also a capacitive coupling between the primary winding 140 and the secondary winding 130 available. With C134 / 2 are in 1c the resulting parasitic capacitances, each between one of the terminals 141_1 . 141_2 the primary winding 140 and one of the terminals of the secondary winding 130 available.
  • Coreless transformers of the type described above are used, for example, in half-bridge circuits for the transmission of a drive signal from a control circuit to a high-side switch of the half-bridge circuit in order to decouple the drive circuit and the high-side switch in terms of potential. In circuit arrangements of this type, during switching operations the high-side and low-side switches, which form the half-bridge circuit and are usually realized as power transistors, become electromagnetic interference signals which can be used to induce interference voltages in the windings of the transformer. These interference voltages are generated by displacement currents in the parasitic capacitances between the primary winding and the secondary winding and may possibly reach the level of useful signals to be transmitted.
  • In conventional, well-known iron core transformers, the effect of parasitic capacitances is reduced by the use of a shield layer between the primary winding and the secondary winding of the transformer.
  • In so-called pulse transformers, which are used for signal transmission, the primary winding and the secondary winding are arranged as far apart on a toroidal ring core, whereby the parasitic capacitance, however, is not significantly reduced, as still a large capacity between the windings and the toroidal core is available.
  • For signal transmission using planar coreless transformers, differential transmission methods are known which enable a detection of interference signals coupled into the transmission path. Such methods are for example in the DE 102 29 860 A1 or the DE 102 28 543 A1 described. However, these transmission methods are comparatively complex.
  • The US 2004/0140528 A1 describes a planar coil with at least two planar winding sections, which in different Winding levels of a dielectric layer are arranged. In one embodiment, one of the winding sections has only one turn.
  • The WO 98/50956 A1 describes a component arrangement with a planar coil arranged on a silicon oxide layer and with a plate-shaped shield arranged in the silicon oxide layer or below the silicon oxide layer in a semiconductor substrate. In addition, a component arrangement is described with a transformer having two spaced apart planar coils, between which a plate-shaped shield is arranged.
  • The object of the present invention is to provide a component arrangement with a planar transformer which, when used in a signal transmission path, is robust against electromagnetic interference signals.
  • This object is achieved by a component arrangement according to claim 1.
  • The component arrangement according to the invention comprises according to a first aspect of the present invention:
    • A semiconductor body,
    • A dielectric layer applied to one side of the semiconductor body,
    • A planar transformer having a primary winding and a secondary winding, which are separated from one another by the dielectric layer and which are arranged spaced apart in a vertical direction relative to the one side of the semiconductor body,
    • A first planar winding section and a second planar winding section of the secondary winding, which are arranged spaced apart in the vertical direction and which are electrically conductively connected to each other, wherein a first terminal of the first winding section forms a first terminal of the secondary winding and a first terminal of the second winding section forms a second terminal of the secondary winding.
  • In the component arrangement according to the invention, the division of the secondary winding into a first and second winding section, wherein one of the two winding sections between the primary winding and the other of the two winding sections is arranged, leads to a reduction of the parasitic capacitance between the primary winding and secondary winding and makes the device arrangement according to the invention in comparison to conventional device arrangements with planar transformers more robust against electromagnetic interference when using the device arrangement in a signal transmission path.
  • The one winding portion of the secondary winding, which is arranged between the other winding portion and the primary winding, has exactly one turn, one end of which is separated by a gap from the other end. The dimensions of this one winding section in a lateral direction thereby correspond at least approximately to the dimensions of the other winding section in the lateral direction or to the dimensions of the primary winding in the lateral direction.
  • The present invention will be explained in more detail in exemplary embodiments with reference to figures.
  • 1 shows a component arrangement with a semiconductor body and a transformer in side view in cross section ( 1a ), in plan view of windings of the transformer ( 1b ) and in the equivalent circuit diagram ( 1c ).
  • 2 shows a component arrangement in side view in cross section ( 2a ), in plan view of a primary winding of a transformer ( 2 B ), in plan view of winding sections of the secondary winding of the transformer ( 2c ) and in the equivalent circuit diagram ( 2d ).
  • 3 shows an embodiment of a device arrangement according to the invention in side view in cross section ( 3a ) and in plan view of a winding section of the secondary winding ( 3b ).
  • 4 shows a plan view of a winding section of the secondary winding in a component arrangement according to another embodiment of the device arrangement according to the invention.
  • In the figures, unless otherwise indicated, like reference characters designate like components and parts thereof have the same meaning.
  • In the 2 illustrated not inventive component arrangement is used for better understanding of the below with reference to 3 and 4 explained invention. This component arrangement includes reference to FIG 2a a semiconductor body 10 and one on the semiconductor body 10 applied dielectric layer 20 that is a primary winding 40 and a secondary winding 30 of a planar transformer in terms of potential separated from each other. The side of the semiconductor body 10 on which the dielectric layer 20 is applied, for example, the front side, on which in the semiconductor body 10 integrated, not shown circuit components are contactable. The secondary winding 30 is, for example, to these in the semiconductor body 10 integrated circuit components connected.
  • The secondary winding 30 The component arrangement comprises two winding sections, namely a first winding section 31 and one in a vertical direction of the semiconductor body 10 and the dielectric layer 20 spaced from the first winding section 31 arranged second winding section 32 , The second winding section 32 is in the vertical direction between the first winding section 31 the secondary winding 30 and the primary winding 40 in the dielectric layer 20 arranged. The dielectric layer 20 consists for example of a semiconductor oxide, in particular silicon oxide. Of course, however, any other electrically insulating layers as a dielectric layer 20 used.
  • The first winding section 31 is in the illustrated example immediately adjacent to the semiconductor body 10 However, the individual windings with respect to the semiconductor body 10 are arranged isolated. An electrically conductive connection between the secondary coil 30 and circuit components of the semiconductor body 10 takes place - if desired - in a manner not shown on connections 34 . 36 the secondary winding.
  • The primary winding 40 and the two winding sections 31 . 32 The secondary winding each comprise a plurality of spirals arranged in a plane, as in FIGS 2 B and 2c is shown, the cross sections through the primary winding 40 in a first cutting plane AA, through the first winding section 31 the secondary winding 30 in a second sectional plane BB and a cross section through the second winding section 32 in a third section plane CC show. These sectional planes AA, BB, CC are parallel to the side of the semiconductor body 10 on which the dielectric layer 20 is applied.
  • The primary winding 40 has a first and a second end 41 . 42 on, the respective terminals of this primary winding 40 form. Accordingly, the first planar winding section 31 and the second planar winding section 32 the secondary winding each first ends 34 . 26 , the first connections of these two winding sections 31 . 32 form, and each second ends 35 . 37 , the second terminals of the two winding sections 31 . 32 make up. The first connections 34 . 36 the first and second winding sections 31 . 32 form connections of the secondary winding 30 in which one in the secondary winding 30 through the primary winding 40 induced voltage can be tapped. The connections of the secondary winding 30 are each through the "outer" ports 34 . 36 that is, in the lateral direction on the outside of the spiral winding sections 31 . 32 lying connections 34 . 36 , educated. The "inner" connections 35 . 37 the winding sections 31 . 32 are through an electrically conductive connection 33 , the sections in the vertical direction between a plane in which the first winding section 31 is formed, and a plane in which the second winding section 32 is formed, runs.
  • These levels, in which the first and second winding section 31 . 32 the secondary winding 30 and also the primary winding 40 are formed, are preferably so-called wiring levels in the dielectric layer 20 , These wiring levels arise in a well-known manner in that successively several partial layers of the dielectric layer 20 be deposited on top of each other, wherein in each of these sub-layers recesses can be produced by means of well-known mask and etching processes, which are filled prior to the deposition of the next sub-layer with an electrically conductive material. The structures of the electrically conductive material form, for example, wirings for in the semiconductor body 10 arranged components, wherein wiring in individual planes by means of vertically extending connections, so-called vias can be interconnected. The illustrated spiral-shaped windings or winding sections can be produced by a spiral-shaped structuring of the individual mask layers, the windings being via vias to the semiconductor body 10 can be connected.
  • 2d shows the electrical equivalent circuit diagram of the previously explained component arrangement. In the equivalent circuit diagram, the terminals that are the terminals of the windings or winding sections 31 . 32 . 40 in the 2a to 2c correspond with corresponding reference numerals.
  • C40 in the equivalent circuit designates the capacitance of the primary winding between the terminals 41 . 42 the primary winding is effective. R40 indicates the ohmic resistance of the primary winding 40 , (1-k) · L40 denotes the inductance value of a leakage inductance resulting from the inductance L40 of the primary winding, and k · L40 denotes the inductance value of the portion of the inductance L40 of the primary winding involved in the magnetic coupling. Ohmic resistor R40, stray inductance (1-k) * L40 and coupling inductance k * L40 form a series connection between the terminals 41 . 42 which is parallel to the winding capacitance C40. C31 in the equivalent circuit designates the capacitance of the first winding section 31 the secondary winding, R31 and L31 denote the ohmic resistance and the inductance this first winding section 31 which form a series connection in parallel with the capacitance C31. Similarly, C32 designates the capacitance of the second winding section 32 the secondary winding 30 , and R32 and L32 denote the ohmic resistance and the inductance of this second winding section which form a series circuit in parallel with the capacitance C32. With C3132 is the total input capacitance between the terminals 34 . 36 the secondary winding 30 referred to, due to the small distance in the vertical direction of the winding sections 31 . 32 is substantially greater than the individual capacitances C31, C32 of the winding sections 31 . 32 ,
  • With Csub / 2 are in 2d Capacities between the winding sections 31 . 32 the secondary winding and the semiconductor body 10 or semiconductor substrate. C4032 / 2 denotes parasitic capacitances between one 42 the connections 41 . 42 the primary winding and a connection 34 the secondary winding and between the other 41 the connections 41 . 42 the primary winding and the connection 33 the winding sections 31 . 32 , The first connection 34 the secondary winding is preferably connected to a reference potential of the semiconductor body 10 connected, for example, the reference potential, on which a dielectric facing away from the back of the semiconductor body is located, which in 2a is shown schematically.
  • A coupling capacity between one of the connections 41 . 42 the primary winding 40 and the connection 36 the secondary winding 30 is because of the shielding effect of the second winding sections 32 practically negligible and is therefore not shown in the equivalent circuit diagram. The between the connection 42 the primary winding 40 and the connection 34 the secondary winding effective proportion of coupling capacitance C4032 / 2 has no effect on the signal transmission when the connection 34 the secondary winding is connected to a reference potential, which is assumed in the equivalent circuit diagram. Electromagnetic interference, over the between the terminals 41 and 33 effective proportion of the coupling capacity C4032 / 2 coupled. become effective only at the resistance portion of the second winding portion R32 and the inductive portion L32.
  • 3a shows a side view in cross section of an embodiment of the device arrangement according to the invention, in which the second winding section 32 in a wiring plane between the first winding section 31 the secondary coil 30 and the primary winding 40 is arranged exactly one turn. A plan view of this second winding section 32 in the sectional plane CC is in 3b shown.
  • Referring to 3b the one turn has a first end 321 and a second end 322 in the wiring plane in which the second winding section 32 is formed through a gap 323 are separated from each other. This gap is due to material of the dielectric layer 20 filled.
  • At the in 3b illustrated embodiment is the conductive connection 33 to the first winding section 31 to the first end 321 of the second winding section 32 connected while the first connection 36 of the second winding section 32 to the second end 322 of the second winding section 32 is connected or formed by this.
  • The dimensions of the one winding having the second winding section 32 in the lateral direction are chosen so that they are at least approximately the dimensions of the plurality of turns having first winding section 31 correspond, so that the second winding section 32 the first winding section 31 the secondary winding 30 against the primary winding 40 shields.
  • In a further embodiment, the in 4 is shown, is the electrically conductive connection 33 to the same end of the second winding section 32 connected, the first connection 36 of the second winding section 32 forms. In this embodiment, the entire second winding section is located 32 at the same potential on which the second connection 35 of the first winding section 31 lies. The second winding section 32 in this embodiment does not substantially contribute to the inductive coupling between the primary coil 40 and secondary coil 30 but essentially serves as a shield between the primary winding 40 and the first, multi-turn first winding section 31 the secondary development 30 ,
  • LIST OF REFERENCE NUMBERS
  • 10
    Semiconductor body, semiconductor substrate
    110
    Semiconductor body, semiconductor substrate
    120
    Dielectric layer, insulation layer
    130
    secondary winding
    130_1, 130_2
    Connections of the secondary winding
    140
    primary
    141/1, 141/2
    Connections of the primary winding
    20
    Dielectric layer, insulation layer
    30
    secondary winding
    31
    first winding section of the secondary winding
    32
    second winding section of the secondary winding
    321, 322
    Ends of the second winding section with only one turn
    323
    Gap between ends of the second winding section
    33
    electrically conductive connection
    34, 35
    Connections of the first winding section
    36, 37
    Terminals of the second winding section
    40
    primary
    41, 42
    Connections of the primary winding
    C134
    parasitic capacitance between terminals of the primary and secondary windings
    C31, C32
    parasitic capacitances of the first and second winding sections
    C3132
    Capacity of the secondary winding
    C40
    parasitic capacitance of the primary winding
    C4032
    parasitic coupling capacity
    C sub
    parasitic capacitance between secondary winding and semiconductor substrate
    GND
    reference potential
    k
    coupling factor
    L140, L130
    Inductors of the primary and secondary windings
    L31, L32
    Inductances of the first and second winding sections
    L40
    Inductance of the primary winding
    R140, R130
    parasitic ohmic resistances of the primary and secondary windings
    R31, R32
    parasitic ohmic resistances of the first and second winding sections
    R40
    parasitic resistance of the primary winding

Claims (4)

  1. Component arrangement, comprising: a semiconductor body ( 10 ), One on one side of the semiconductor body ( 10 ) applied dielectric layer ( 20 ), - a planar transformer with a primary winding ( 40 ) and a secondary winding ( 30 ) passing through the dielectric layer ( 20 ) are separated from each other and are arranged in a vertical direction with respect to the one side of the semiconductor body spaced from each other, - a first planar winding portion ( 31 ) and a second planar winding section ( 32 ) of the secondary winding ( 30 ) spaced apart in the vertical direction with an outer first terminal (16) 34 ) of the first winding section ( 31 ) forms a first terminal of the secondary winding and an outer first terminal ( 36 ) of the second winding section ( 32 ) forms a second terminal of the secondary winding, wherein the first winding section ( 31 ) has more than one turn, wherein the second winding section has exactly one turn, one end of which ( 321 ) through a gap ( 323 ) from the other end ( 322 ), wherein the second winding section ( 32 ) in the vertical direction between the first winding section (FIG. 31 ) and the primary winding ( 40 ), wherein the first winding section ( 31 ) of the secondary winding ( 30 ) in a first wiring plane, the second winding section ( 32 ) of the secondary winding ( 30 ) in a second wiring level and the primary winding ( 40 ) in a third wiring level of the dielectric layer ( 20 ), wherein the first winding section ( 31 ) and the second winding section ( 32 ) are electrically conductively connected to each other by an inner second terminal ( 35 ) of the first winding section ( 31 ) which extends laterally inwards on the first winding section (FIG. 31 ) is arranged by means of an electrically conductive connection extending in the vertical direction between the first and second wiring plane ( 33 ) in the lateral direction on the inside of the second winding section (FIG. 32 ) connected.
  2. Component arrangement according to Claim 1, in which the second connection ( 35 ) of the first winding section ( 31 ) to one end ( 321 ) of the second winding section ( 32 ) and at the other end ( 322 ) the first connection ( 36 ) of the second winding section ( 32 ).
  3. Component arrangement according to Claim 1, in which the second connection ( 35 ) of the first winding section ( 31 ) to one end ( 321 ) of the second winding section ( 32 ) is connected and at the one end ( 321 ) the first connection ( 36 ) of the second winding section ( 32 ).
  4. Component assembly according to one of the preceding claims, wherein the dimensions of the second winding section ( 32 ) in a lateral direction the dimensions of the first winding section ( 31 ) and / or the primary winding ( 240 ) correspond.
DE200410064102 2004-07-26 2004-07-26 Component arrangement with planar transformer, includes dielectric layer which is provided on semiconductor body to electrically isolates primary and secondary windings of planar transformer from one another Active DE102004064102B4 (en)

Priority Applications (1)

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DE200410064102 DE102004064102B4 (en) 2004-07-26 2004-07-26 Component arrangement with planar transformer, includes dielectric layer which is provided on semiconductor body to electrically isolates primary and secondary windings of planar transformer from one another

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200410064102 DE102004064102B4 (en) 2004-07-26 2004-07-26 Component arrangement with planar transformer, includes dielectric layer which is provided on semiconductor body to electrically isolates primary and secondary windings of planar transformer from one another
DE200410036139 DE102004036139B4 (en) 2004-07-26 2004-07-26 Component arrangement with a planar transformer

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DE102004064102B4 true DE102004064102B4 (en) 2013-04-11

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3293742A1 (en) * 2016-09-08 2018-03-14 Nexperia B.V. Inductive coupling for electrostatic discharge

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5781077A (en) * 1997-01-28 1998-07-14 Burr-Brown Corporation Reducing transformer interwinding capacitance
WO1998050956A1 (en) * 1997-05-02 1998-11-12 The Board Of Trustees Of The Leland Stanford Junior University Patterned ground shields for integrated circuit inductors
DE19906261A1 (en) * 1998-03-18 1999-09-23 Fdk Corp Sheet transformer
DE10232642A1 (en) * 2002-07-18 2004-02-12 Infineon Technologies Ag Integrated transformer for signal transmission has long coil of rectangular cross section and a second electrically isolated but inductively coupled coil
US20040140528A1 (en) * 2002-11-13 2004-07-22 Kim Cheon Soo Stacked variable inductor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5781077A (en) * 1997-01-28 1998-07-14 Burr-Brown Corporation Reducing transformer interwinding capacitance
WO1998050956A1 (en) * 1997-05-02 1998-11-12 The Board Of Trustees Of The Leland Stanford Junior University Patterned ground shields for integrated circuit inductors
DE19906261A1 (en) * 1998-03-18 1999-09-23 Fdk Corp Sheet transformer
DE10232642A1 (en) * 2002-07-18 2004-02-12 Infineon Technologies Ag Integrated transformer for signal transmission has long coil of rectangular cross section and a second electrically isolated but inductively coupled coil
US20040140528A1 (en) * 2002-11-13 2004-07-22 Kim Cheon Soo Stacked variable inductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3293742A1 (en) * 2016-09-08 2018-03-14 Nexperia B.V. Inductive coupling for electrostatic discharge

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