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Halbleitervorrichtungen mit Filmmaterial mit niedriger Dielektrizitätskonstante und Verfahren zu ihrer Herstellung

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Publication number
DE10164913B8
DE10164913B8 DE2001164913 DE10164913A DE10164913B8 DE 10164913 B8 DE10164913 B8 DE 10164913B8 DE 2001164913 DE2001164913 DE 2001164913 DE 10164913 A DE10164913 A DE 10164913A DE 10164913 B8 DE10164913 B8 DE 10164913B8
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DE
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE2001164913
Other languages
English (en)
Other versions
DE10164913B4 (de )
Inventor
Shun-ichi Kawasaki Fukuyama
Yoshihiro Kawasaki Nakata
Tamotsu Kawasaki Owada
Iwao Kawasaki Sugiura
Katsumi Kawasaki Suzuki
Ei Kawasaki Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
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    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
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    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
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    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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    • H01L21/02205Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/312Organic layers, e.g. photoresist
    • H01L21/3121Layers comprising organo-silicon compounds
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    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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    • H01L21/76829Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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    • H01L23/53204Conductive materials
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31652Of asbestos
    • Y10T428/31663As siloxane, silicone or silane
DE2001164913 2000-03-29 2001-03-15 Halbleitervorrichtungen mit Filmmaterial mit niedriger Dielektrizitätskonstante und Verfahren zu ihrer Herstellung Active DE10164913B8 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000092138 2000-03-29
JP2000-092138P 2000-03-29
JP2001002113A JP3604007B2 (ja) 2000-03-29 2001-01-10 低誘電率被膜形成材料、及びそれを用いた被膜と半導体装置の製造方法
JP2001-002113P 2001-01-10
DE2001113110 DE10113110B4 (de) 2000-03-29 2001-03-15 Filmmaterial und Film mit niedriger Dielektrizitätskonstante
DE2001165028 DE10165028B4 (de) 2000-03-29 2001-03-15 Halbleitervorrichtung mit einem Halbleitersubstrat und einem Film mit niedriger Dielektrizitätskonstante

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Application Number Priority Date Filing Date Title
DE2001113110 DE10113110B4 (de) 2000-03-29 2001-03-15 Filmmaterial und Film mit niedriger Dielektrizitätskonstante
DE2001165028 DE10165028B4 (de) 2000-03-29 2001-03-15 Halbleitervorrichtung mit einem Halbleitersubstrat und einem Film mit niedriger Dielektrizitätskonstante

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DE10164913B4 DE10164913B4 (de) 2008-06-12
DE10164913B8 true DE10164913B8 (de) 2008-10-02

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DE2001165028 Active DE10165028B4 (de) 2000-03-29 2001-03-15 Halbleitervorrichtung mit einem Halbleitersubstrat und einem Film mit niedriger Dielektrizitätskonstante
DE2001164913 Active DE10164913B8 (de) 2000-03-29 2001-03-15 Halbleitervorrichtungen mit Filmmaterial mit niedriger Dielektrizitätskonstante und Verfahren zu ihrer Herstellung
DE2001113110 Active DE10113110B4 (de) 2000-03-29 2001-03-15 Filmmaterial und Film mit niedriger Dielektrizitätskonstante

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US (3) US6613834B2 (de)
JP (1) JP3604007B2 (de)
KR (1) KR100703763B1 (de)
DE (3) DE10165028B4 (de)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6824879B2 (en) * 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
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