DE10119741B4 - Verfahren und Vorrichtung zum Behandeln von Halbleitersubstraten - Google Patents

Verfahren und Vorrichtung zum Behandeln von Halbleitersubstraten Download PDF

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Publication number
DE10119741B4
DE10119741B4 DE10119741A DE10119741A DE10119741B4 DE 10119741 B4 DE10119741 B4 DE 10119741B4 DE 10119741 A DE10119741 A DE 10119741A DE 10119741 A DE10119741 A DE 10119741A DE 10119741 B4 DE10119741 B4 DE 10119741B4
Authority
DE
Germany
Prior art keywords
oxygen
hydrogen
combustion chamber
process gas
combustion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10119741A
Other languages
German (de)
English (en)
Other versions
DE10119741A1 (de
Inventor
Dr. Roters Georg
Roland Mader
Helmut Sommer
Genrih Erlikh
Yehuda Pashut
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mattson Thermal Products GmbH
Original Assignee
Mattson Thermal Products GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mattson Thermal Products GmbH filed Critical Mattson Thermal Products GmbH
Priority to DE10119741A priority Critical patent/DE10119741B4/de
Priority to TW091106866A priority patent/TW588419B/zh
Priority to EP02764065A priority patent/EP1382063A1/de
Priority to PCT/EP2002/004345 priority patent/WO2002086958A1/de
Priority to KR1020037013762A priority patent/KR100700240B1/ko
Priority to JP2002584378A priority patent/JP4276845B2/ja
Priority to US10/476,136 priority patent/US7144826B2/en
Publication of DE10119741A1 publication Critical patent/DE10119741A1/de
Application granted granted Critical
Publication of DE10119741B4 publication Critical patent/DE10119741B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F22—STEAM GENERATION
    • F22B—METHODS OF STEAM GENERATION; STEAM BOILERS
    • F22B1/00—Methods of steam generation characterised by form of heating method
    • F22B1/003—Methods of steam generation characterised by form of heating method using combustion of hydrogen with oxygen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Formation Of Insulating Films (AREA)
DE10119741A 2001-04-23 2001-04-23 Verfahren und Vorrichtung zum Behandeln von Halbleitersubstraten Expired - Fee Related DE10119741B4 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE10119741A DE10119741B4 (de) 2001-04-23 2001-04-23 Verfahren und Vorrichtung zum Behandeln von Halbleitersubstraten
TW091106866A TW588419B (en) 2001-04-23 2002-04-04 Method and device for the production of process gases
PCT/EP2002/004345 WO2002086958A1 (de) 2001-04-23 2002-04-19 Verfahren und vorrichtung zum erzeugen von prozessgasen
KR1020037013762A KR100700240B1 (ko) 2001-04-23 2002-04-19 공정 가스의 생성 방법 및 생성 장치
EP02764065A EP1382063A1 (de) 2001-04-23 2002-04-19 Verfahren und vorrichtung zum erzeugen von prozessgasen
JP2002584378A JP4276845B2 (ja) 2001-04-23 2002-04-19 基板を処理するための方法及び装置
US10/476,136 US7144826B2 (en) 2001-04-23 2002-04-19 Method and apparatus for the production of process gas that includes water vapor and hydrogen formed by burning oxygen in a hydrogen-rich environment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10119741A DE10119741B4 (de) 2001-04-23 2001-04-23 Verfahren und Vorrichtung zum Behandeln von Halbleitersubstraten

Publications (2)

Publication Number Publication Date
DE10119741A1 DE10119741A1 (de) 2002-10-24
DE10119741B4 true DE10119741B4 (de) 2012-01-19

Family

ID=7682338

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10119741A Expired - Fee Related DE10119741B4 (de) 2001-04-23 2001-04-23 Verfahren und Vorrichtung zum Behandeln von Halbleitersubstraten

Country Status (7)

Country Link
US (1) US7144826B2 (https=)
EP (1) EP1382063A1 (https=)
JP (1) JP4276845B2 (https=)
KR (1) KR100700240B1 (https=)
DE (1) DE10119741B4 (https=)
TW (1) TW588419B (https=)
WO (1) WO2002086958A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4609098B2 (ja) * 2004-03-24 2011-01-12 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
KR100966086B1 (ko) * 2005-03-08 2010-06-28 가부시키가이샤 히다치 고쿠사이 덴키 반도체장치의 제조 방법 및 기판처리장치
JP4453021B2 (ja) * 2005-04-01 2010-04-21 セイコーエプソン株式会社 半導体装置の製造方法及び半導体製造装置
GB0613044D0 (en) * 2006-06-30 2006-08-09 Boc Group Plc Gas combustion apparatus
US20080257719A1 (en) * 2007-04-21 2008-10-23 Ted Suratt Apparatus And Method For Making Flammable Gas
US9698439B2 (en) 2008-02-19 2017-07-04 Proton Power, Inc. Cellulosic biomass processing for hydrogen extraction
US8303676B1 (en) 2008-02-19 2012-11-06 Proton Power, Inc. Conversion of C-O-H compounds into hydrogen for power or heat generation
US9023243B2 (en) 2012-08-27 2015-05-05 Proton Power, Inc. Methods, systems, and devices for synthesis gas recapture
US10005961B2 (en) 2012-08-28 2018-06-26 Proton Power, Inc. Methods, systems, and devices for continuous liquid fuel production from biomass
CA2884860C (en) 2012-09-18 2021-04-20 Proton Power, Inc. C-o-h compound processing for hydrogen or liquid fuel production
US10563128B2 (en) 2014-01-10 2020-02-18 Proton Power, Inc. Methods for aerosol capture
US20150307784A1 (en) 2014-03-05 2015-10-29 Proton Power, Inc. Continuous liquid fuel production methods, systems, and devices
US9890332B2 (en) 2015-03-08 2018-02-13 Proton Power, Inc. Biochar products and production
CN107154354B (zh) 2016-03-03 2020-12-11 上海新昇半导体科技有限公司 晶圆热处理的方法
CN112413589B (zh) * 2020-11-04 2023-04-14 北京北方华创微电子装备有限公司 半导体工艺设备的点火装置及半导体工艺设备

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3630956A (en) * 1969-04-01 1971-12-28 Air Prod & Chem Method of producing gases with controlled concentrations of water vapor
DE2411006A1 (de) * 1973-03-12 1974-09-19 Rockwell International Corp Verfahren zur thermischen rekombination und vorrichtung zur durchfuehrung dieses verfahrens
DE3143050A1 (de) * 1981-10-30 1983-05-05 Varta Batterie Ag, 3000 Hannover Verfahren zur druckgesteuerten h(pfeil abwaerts)2(pfeil abwaerts)/o(pfeil abwaerts)2(pfeil abwaerts)-rekombination
EP0307621A1 (de) * 1987-09-01 1989-03-22 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Verfahren zur druckgesteuerten katalytischen Verbrennung von Gasen in einem Oxidationsreaktor
DE3809367C2 (https=) * 1988-03-19 1991-05-16 Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe, De
US5257926A (en) * 1991-12-17 1993-11-02 Gideon Drimer Fast, safe, pyrogenic external torch assembly
JPH06333918A (ja) * 1993-05-25 1994-12-02 Tadahiro Omi 絶縁酸化膜の形成方法及び半導体装置
JPH0920501A (ja) * 1995-07-06 1997-01-21 Nippon Seisan Gijutsu Kenkyusho:Kk 超高純度水の製造方法およびその装置
EP0922667A1 (en) * 1997-06-17 1999-06-16 FUJIKIN Inc. Method for generating water for semiconductor production
JPH11204511A (ja) * 1998-01-08 1999-07-30 Kokusai Electric Co Ltd シリコン熱酸化膜の形成装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194522A (en) 1981-05-27 1982-11-30 Oki Electric Ind Co Ltd Thermal treatment of semiconductor wafer
FR2643364B1 (fr) * 1989-02-22 1993-08-13 Air Liquide Procede d'elaboration de composants multicouches ceramique-metal et appareil pour sa mise en oeuvre
JPH088255B2 (ja) * 1990-02-20 1996-01-29 株式会社東芝 半導体基板表面処理方法および半導体基板表面処理装置
US5316796A (en) * 1990-03-09 1994-05-31 Nippon Telegraph And Telephone Corporation Process for growing a thin metallic film
US5527926A (en) * 1990-11-26 1996-06-18 Bracco International B.V. Methods and compositions for using non-ionic contrast agents to reduce the risk of clot formation in diagnostic procedures
JPH0710935U (ja) * 1993-07-24 1995-02-14 ヤマハ株式会社 縦型熱処理炉
JP3155487B2 (ja) * 1997-02-12 2001-04-09 株式会社日立国際電気 ウェット酸化装置およびウェット酸化方法
JP3644810B2 (ja) * 1997-12-10 2005-05-11 株式会社フジキン 少流量の水分供給方法
US6114258A (en) * 1998-10-19 2000-09-05 Applied Materials, Inc. Method of oxidizing a substrate in the presence of nitride and oxynitride films
US6372663B1 (en) * 2000-01-13 2002-04-16 Taiwan Semiconductor Manufacturing Company, Ltd Dual-stage wet oxidation process utilizing varying H2/O2 ratios
TW200416772A (en) * 2002-06-06 2004-09-01 Asml Us Inc System and method for hydrogen-rich selective oxidation

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3630956A (en) * 1969-04-01 1971-12-28 Air Prod & Chem Method of producing gases with controlled concentrations of water vapor
DE2411006A1 (de) * 1973-03-12 1974-09-19 Rockwell International Corp Verfahren zur thermischen rekombination und vorrichtung zur durchfuehrung dieses verfahrens
DE3143050A1 (de) * 1981-10-30 1983-05-05 Varta Batterie Ag, 3000 Hannover Verfahren zur druckgesteuerten h(pfeil abwaerts)2(pfeil abwaerts)/o(pfeil abwaerts)2(pfeil abwaerts)-rekombination
EP0307621A1 (de) * 1987-09-01 1989-03-22 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Verfahren zur druckgesteuerten katalytischen Verbrennung von Gasen in einem Oxidationsreaktor
DE3809367C2 (https=) * 1988-03-19 1991-05-16 Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe, De
US5257926A (en) * 1991-12-17 1993-11-02 Gideon Drimer Fast, safe, pyrogenic external torch assembly
JPH06333918A (ja) * 1993-05-25 1994-12-02 Tadahiro Omi 絶縁酸化膜の形成方法及び半導体装置
JPH0920501A (ja) * 1995-07-06 1997-01-21 Nippon Seisan Gijutsu Kenkyusho:Kk 超高純度水の製造方法およびその装置
EP0922667A1 (en) * 1997-06-17 1999-06-16 FUJIKIN Inc. Method for generating water for semiconductor production
JPH11204511A (ja) * 1998-01-08 1999-07-30 Kokusai Electric Co Ltd シリコン熱酸化膜の形成装置

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
JP 06-3 33 918 A, i.d.F. der el. Übersetzung ins Englische
JP 06333918 A, i.d.F. der el. Übersetzung ins Englische *
JP 11-2 04 511 A, i.d.F. der el. Übersetzung ins Englische
JP 11204511 A, i.d.F. der el. Übersetzung ins Englische *

Also Published As

Publication number Publication date
US7144826B2 (en) 2006-12-05
EP1382063A1 (de) 2004-01-21
TW588419B (en) 2004-05-21
KR20030092091A (ko) 2003-12-03
JP2004522302A (ja) 2004-07-22
WO2002086958A1 (de) 2002-10-31
DE10119741A1 (de) 2002-10-24
KR100700240B1 (ko) 2007-03-26
JP4276845B2 (ja) 2009-06-10
US20040137754A1 (en) 2004-07-15

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