New! View global litigation for patent families

DE10058446B8 - Halbleitervorrichtung mit Abstrahlungsbauteilen - Google Patents

Halbleitervorrichtung mit Abstrahlungsbauteilen

Info

Publication number
DE10058446B8
DE10058446B8 DE2000158446 DE10058446A DE10058446B8 DE 10058446 B8 DE10058446 B8 DE 10058446B8 DE 2000158446 DE2000158446 DE 2000158446 DE 10058446 A DE10058446 A DE 10058446A DE 10058446 B8 DE10058446 B8 DE 10058446B8
Authority
DE
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE2000158446
Other languages
English (en)
Other versions
DE10058446B4 (de )
DE10058446A1 (de )
Inventor
Kuniaki Mamitsu
Yasuyoshi Hirai
Kazuhito Nomura
Yutaka Fukuda
Kazuo Kajimoto
Takeshi Miyajima
Tomoatsu Makino
Yoshimi Nakase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334Auxiliary members in encapsulations
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29116Lead [Pb] as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/29386Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001Core members of the connector
    • H01L2224/37099Material
    • H01L2224/371Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73215Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/83801Soldering or alloying
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848Bonding techniques
    • H01L2224/84801Soldering or alloying
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00013Fully indexed content
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0101Neon [Ne]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0102Calcium [Ca]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01042Molybdenum [Mo]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01052Tellurium [Te]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01057Lanthanum [La]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01058Cerium [Ce]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01061Promethium [Pm]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01068Erbium [Er]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01075Rhenium [Re]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01084Polonium [Po]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01094Plutonium [Pu]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049Nitrides composed of metals from groups of the periodic table
    • H01L2924/04944th Group
    • H01L2924/04941TiN
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811Extrinsic, i.e. with electrical conductive fillers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301Thyristor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
DE2000158446 1999-11-24 2000-11-24 Halbleitervorrichtung mit Abstrahlungsbauteilen Active DE10058446B8 (de)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP11-333119 1999-11-24
JP33311999A JP3525832B2 (ja) 1999-11-24 1999-11-24 半導体装置
JP11-333124 1999-11-24
JP33312499A JP3596388B2 (ja) 1999-11-24 1999-11-24 半導体装置
JP00-88579 2000-03-24
JP2000088579A JP3614079B2 (ja) 2000-03-24 2000-03-24 半導体装置及びその製造方法
JP00-97912 2000-03-30
JP2000097912A JP3620399B2 (ja) 2000-03-30 2000-03-30 電気機器の製造方法
JP00-97911 2000-03-30
JP2000097911A JP3630070B2 (ja) 2000-03-30 2000-03-30 半導体チップおよび半導体装置
JP00-305228 2000-10-04
JP2000305228A JP3601432B2 (ja) 2000-10-04 2000-10-04 半導体装置

Publications (3)

Publication Number Publication Date
DE10058446A1 true DE10058446A1 (de) 2001-05-31
DE10058446B4 DE10058446B4 (de) 2012-12-27
DE10058446B8 true DE10058446B8 (de) 2013-04-11

Family

ID=27554635

Family Applications (6)

Application Number Title Priority Date Filing Date
DE2000166443 Active DE10066443B8 (de) 1999-11-24 2000-11-24 Halbleitervorrichtung mit Abstrahlungsbauteilen
DE2000166446 Active DE10066446B4 (de) 1999-11-24 2000-11-24 Verfahren zur Herstellung eines elektronischen Bauteils mit zwei Abstrahlungsbauteilen
DE2000166445 Active DE10066445B4 (de) 1999-11-24 2000-11-24 Halbleitervorrichtung mit Abstrahlungs-Struktur
DE2000166441 Active DE10066441B4 (de) 1999-11-24 2000-11-24 Halbleitervorrichtung mit Abstrahlungsbauteilen
DE2000158446 Active DE10058446B8 (de) 1999-11-24 2000-11-24 Halbleitervorrichtung mit Abstrahlungsbauteilen
DE2000166442 Active DE10066442B4 (de) 1999-11-24 2000-11-24 Halbleitervorrichtung mit Abstrahlungs-Struktur

Family Applications Before (4)

Application Number Title Priority Date Filing Date
DE2000166443 Active DE10066443B8 (de) 1999-11-24 2000-11-24 Halbleitervorrichtung mit Abstrahlungsbauteilen
DE2000166446 Active DE10066446B4 (de) 1999-11-24 2000-11-24 Verfahren zur Herstellung eines elektronischen Bauteils mit zwei Abstrahlungsbauteilen
DE2000166445 Active DE10066445B4 (de) 1999-11-24 2000-11-24 Halbleitervorrichtung mit Abstrahlungs-Struktur
DE2000166441 Active DE10066441B4 (de) 1999-11-24 2000-11-24 Halbleitervorrichtung mit Abstrahlungsbauteilen

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE2000166442 Active DE10066442B4 (de) 1999-11-24 2000-11-24 Halbleitervorrichtung mit Abstrahlungs-Struktur

Country Status (3)

Country Link
US (9) US6703707B1 (de)
DE (6) DE10066443B8 (de)
FR (1) FR2801423B1 (de)

Families Citing this family (131)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6949824B1 (en) * 2000-04-12 2005-09-27 Micron Technology, Inc. Internal package heat dissipator
JP4479121B2 (ja) * 2001-04-25 2010-06-09 株式会社デンソー 半導体装置の製造方法
US6635513B2 (en) * 2001-05-29 2003-10-21 Hewlett-Packard Development Company, L.P. Pre-curved spring bolster plate
US7145254B2 (en) * 2001-07-26 2006-12-05 Denso Corporation Transfer-molded power device and method for manufacturing transfer-molded power device
DE10142971A1 (de) * 2001-09-01 2003-03-27 Eupec Gmbh & Co Kg Leistungshalbleitermodul
JP3627738B2 (ja) * 2001-12-27 2005-03-09 株式会社デンソー 半導体装置
DE10200066A1 (de) * 2002-01-03 2003-07-17 Siemens Ag Leistungselektronikeinheit
JP3850739B2 (ja) * 2002-02-21 2006-11-29 三菱電機株式会社 半導体装置
JP3673776B2 (ja) * 2002-07-03 2005-07-20 株式会社日立カーエンジニアリング 半導体モジュール及び電力変換装置
EP1389802A1 (de) * 2002-08-16 2004-02-18 ABB Schweiz AG Schutzschicht für Leistungshalbleitermodul-Kontaktplättchen
JP2004200346A (ja) * 2002-12-18 2004-07-15 Allied Material Corp 半導体素子収納用パッケージ、その製造方法及び半導体装置
JP3879688B2 (ja) * 2003-03-26 2007-02-14 株式会社デンソー 半導体装置
JP4120876B2 (ja) * 2003-05-26 2008-07-16 株式会社デンソー 半導体装置
US7193326B2 (en) * 2003-06-23 2007-03-20 Denso Corporation Mold type semiconductor device
JP3759131B2 (ja) * 2003-07-31 2006-03-22 Necエレクトロニクス株式会社 リードレスパッケージ型半導体装置とその製造方法
EP1657806B1 (de) * 2003-08-21 2011-11-30 Denso Corporation Stromwandler und halbleiterbauelemente-anbringstruktur
CN100413060C (zh) * 2003-09-04 2008-08-20 松下电器产业株式会社 半导体装置
JP2005117009A (ja) * 2003-09-17 2005-04-28 Denso Corp 半導体装置およびその製造方法
US7239016B2 (en) * 2003-10-09 2007-07-03 Denso Corporation Semiconductor device having heat radiation plate and bonding member
JP3750680B2 (ja) * 2003-10-10 2006-03-01 株式会社デンソー パッケージ型半導体装置
JP2005136264A (ja) * 2003-10-31 2005-05-26 Mitsubishi Electric Corp 電力用半導体装置及び電力用半導体モジュール
US20060055056A1 (en) * 2003-11-21 2006-03-16 Denso Corporation Semiconductor equipment having a pair of heat radiation plates
JP4254527B2 (ja) * 2003-12-24 2009-04-15 株式会社デンソー 半導体装置
JP4491244B2 (ja) * 2004-01-07 2010-06-30 アルストム・トランスポール・ソシエテ・アノニム 電力半導体装置
JP2005203548A (ja) * 2004-01-15 2005-07-28 Honda Motor Co Ltd 半導体装置のモジュール構造
JP2005217072A (ja) * 2004-01-28 2005-08-11 Renesas Technology Corp 半導体装置
JP4302607B2 (ja) * 2004-01-30 2009-07-29 株式会社デンソー 半導体装置
JP2005251784A (ja) * 2004-03-01 2005-09-15 Renesas Technology Corp 半導体モジュールおよびその製造方法
DE102004018477B4 (de) * 2004-04-16 2008-08-21 Infineon Technologies Ag Halbleitermodul
DE102004019442A1 (de) * 2004-04-19 2005-10-06 Siemens Ag An planarer Verbindung angeordneter Kühlkörper
DE102004019435A1 (de) * 2004-04-19 2005-11-03 Siemens Ag An einer Kühlrippe angeordnetes Bauelement
JP4158738B2 (ja) * 2004-04-20 2008-10-01 株式会社デンソー 半導体モジュール実装構造、カード状半導体モジュール及びカード状半導体モジュール密着用受熱部材
DE102004031592A1 (de) * 2004-06-30 2006-02-09 Robert Bosch Gmbh Elektronikmodulanordnung und entsprechendes Herstellungsverfahren
US20060043577A1 (en) * 2004-08-31 2006-03-02 Chih-An Yang Structure and process of semiconductor package with an exposed heatsink
JP4604641B2 (ja) * 2004-10-18 2011-01-05 株式会社デンソー 半導体装置
US7394158B2 (en) * 2004-10-21 2008-07-01 Siliconix Technology C.V. Solderable top metal for SiC device
US7812441B2 (en) 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
JP4338620B2 (ja) * 2004-11-01 2009-10-07 三菱電機株式会社 半導体装置及びその製造方法
US8125781B2 (en) * 2004-11-11 2012-02-28 Denso Corporation Semiconductor device
EP1672692B1 (de) * 2004-12-16 2015-01-07 ABB Research Ltd Leistungshalbleiter-Modul
US7696532B2 (en) * 2004-12-16 2010-04-13 Abb Research Ltd Power semiconductor module
DE102005001151B4 (de) * 2005-01-10 2012-04-19 Infineon Technologies Ag Bauelementanordnung zur Serienschaltung bei Hochspannungsanwendungen
US7834376B2 (en) * 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
US9419092B2 (en) * 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
JP4581885B2 (ja) 2005-07-22 2010-11-17 株式会社デンソー 半導体装置
US20070075419A1 (en) * 2005-09-06 2007-04-05 Denso Corporation Semiconductor device having metallic lead and electronic device having lead frame
JP4395775B2 (ja) 2005-10-05 2010-01-13 ソニー株式会社 半導体装置及びその製造方法
US7508067B2 (en) * 2005-10-13 2009-03-24 Denso Corporation Semiconductor insulation structure
US7786555B2 (en) * 2005-10-20 2010-08-31 Diodes, Incorporated Semiconductor devices with multiple heat sinks
US8368165B2 (en) * 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
JP4450230B2 (ja) * 2005-12-26 2010-04-14 株式会社デンソー 半導体装置
DE102006006424B4 (de) * 2006-02-13 2011-11-17 Semikron Elektronik Gmbh & Co. Kg Anordnung mit mindestens einem Leistungshalbleitermodul und einem Kühlbauteil und zugehöriges Herstellungsverfahren
DE102006006425B4 (de) * 2006-02-13 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul in Druckkontaktausführung
DE102006013017B4 (de) * 2006-03-20 2014-11-06 R. Stahl Schaltgeräte GmbH Gehäuse mit Wärmebrücke
JP2007251076A (ja) * 2006-03-20 2007-09-27 Hitachi Ltd パワー半導体モジュール
JP2007300059A (ja) * 2006-04-03 2007-11-15 Denso Corp 半導体装置およびその製造方法
US8004075B2 (en) * 2006-04-25 2011-08-23 Hitachi, Ltd. Semiconductor power module including epoxy resin coating
JP4564937B2 (ja) * 2006-04-27 2010-10-20 日立オートモティブシステムズ株式会社 電気回路装置及び電気回路モジュール並びに電力変換装置
US7619302B2 (en) * 2006-05-23 2009-11-17 International Rectifier Corporation Highly efficient both-side-cooled discrete power package, especially basic element for innovative power modules
JP4858290B2 (ja) * 2006-06-05 2012-01-18 株式会社デンソー 負荷駆動装置
JP2007335663A (ja) * 2006-06-15 2007-12-27 Toyota Motor Corp 半導体モジュール
JP5232367B2 (ja) * 2006-07-12 2013-07-10 ルネサスエレクトロニクス株式会社 半導体装置
US9627552B2 (en) * 2006-07-31 2017-04-18 Vishay-Siliconix Molybdenum barrier metal for SiC Schottky diode and process of manufacture
JP4821537B2 (ja) * 2006-09-26 2011-11-24 株式会社デンソー 電子制御装置
JP2008124430A (ja) * 2006-10-18 2008-05-29 Hitachi Ltd パワー半導体モジュール
JP4349531B2 (ja) * 2006-10-27 2009-10-21 Tdk株式会社 マスク装置
JP2008135719A (ja) * 2006-10-31 2008-06-12 Sanyo Electric Co Ltd 半導体モジュール、半導体モジュールの製造方法および携帯機器
WO2008074164A1 (en) * 2006-12-21 2008-06-26 Abb Research Ltd Semiconductor module
US7447041B2 (en) * 2007-03-01 2008-11-04 Delphi Technologies, Inc. Compression connection for vertical IC packages
US8003446B2 (en) * 2007-03-22 2011-08-23 Microsemi Corporation Flexible diode package and method of manufacturing
DE102007020618B8 (de) * 2007-04-30 2009-03-12 Danfoss Silicon Power Gmbh Verfahren zum Herstellen eines festen Leistungsmoduls und damit hergestelltes Transistormodul
US7737548B2 (en) * 2007-08-29 2010-06-15 Fairchild Semiconductor Corporation Semiconductor die package including heat sinks
US20090103342A1 (en) * 2007-10-17 2009-04-23 Saul Lin Silicon-controlled rectifier with a heat-dissipating structure
US20090127701A1 (en) * 2007-11-15 2009-05-21 Nitin Goel Thermal attach for electronic device cooling
JP4506848B2 (ja) * 2008-02-08 2010-07-21 株式会社デンソー 半導体モジュール
KR101493866B1 (ko) * 2008-02-28 2015-02-16 페어차일드코리아반도체 주식회사 전력 소자 패키지 및 그 제조 방법
DE112009000447B4 (de) * 2008-04-09 2016-07-14 Fuji Electric Co., Ltd. Halbleitervorrichtung und Verfahren zu ihrer Herstellung
JP2009283656A (ja) 2008-05-22 2009-12-03 Denso Corp 半導体装置およびその製造方法
WO2010004609A1 (ja) * 2008-07-07 2010-01-14 三菱電機株式会社 電力用半導体装置
US7724528B2 (en) * 2008-07-11 2010-05-25 Cisco Technology, Inc. Thermal dissipation heat slug sandwich
JP5550225B2 (ja) * 2008-09-29 2014-07-16 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 回路装置
US7863103B2 (en) * 2008-10-22 2011-01-04 Texas Instruments Incorporated Thermally improved semiconductor QFN/SON package
US8315608B2 (en) * 2008-12-17 2012-11-20 Steve Cha Easy call for content
JP2010225720A (ja) * 2009-03-23 2010-10-07 Mitsubishi Electric Corp パワーモジュール
JP5018909B2 (ja) * 2009-06-30 2012-09-05 株式会社デンソー 半導体装置
WO2011004469A1 (ja) 2009-07-08 2011-01-13 トヨタ自動車株式会社 半導体装置とその製造方法
DE102010038933A1 (de) * 2009-08-18 2011-02-24 Denso Corporation, Kariya-City Halbleitervorrichtung mit Halbleiterchip und Metallplatte und Verfahren zu deren Fertigung
EP2287899B1 (de) * 2009-08-18 2014-05-07 SEMIKRON Elektronik GmbH & Co. KG Lötverbindung mit einer mehrlagigen lötbaren Schicht und entsprechendes Herstellungsverfahren
JP5545000B2 (ja) 2010-04-14 2014-07-09 富士電機株式会社 半導体装置の製造方法
JP5557585B2 (ja) * 2010-04-26 2014-07-23 日立オートモティブシステムズ株式会社 パワーモジュール
KR101401764B1 (ko) * 2010-05-12 2014-05-30 도요타지도샤가부시키가이샤 반도체 장치
JP5659938B2 (ja) * 2010-05-17 2015-01-28 富士電機株式会社 半導体ユニットおよびそれを用いた半導体装置
JP5437943B2 (ja) * 2010-07-26 2014-03-12 日立オートモティブシステムズ株式会社 パワー半導体ユニット、パワーモジュールおよびそれらの製造方法
JP5414644B2 (ja) * 2010-09-29 2014-02-12 三菱電機株式会社 半導体装置
JP5427745B2 (ja) * 2010-09-30 2014-02-26 日立オートモティブシステムズ株式会社 パワー半導体モジュール及びその製造方法
JP5325917B2 (ja) * 2011-03-17 2013-10-23 株式会社東芝 半導体装置及びその製造方法
JP2012230981A (ja) * 2011-04-26 2012-11-22 Elpida Memory Inc 半導体装置及びその製造方法
DE202011100820U1 (de) 2011-05-17 2011-12-01 Ixys Semiconductor Gmbh Leistungshalbleiter
US8804340B2 (en) * 2011-06-08 2014-08-12 International Rectifier Corporation Power semiconductor package with double-sided cooling
JP5529208B2 (ja) * 2011-08-25 2014-06-25 トヨタ自動車株式会社 パワーモジュールの構造及び成形方法
CN103023279B (zh) * 2011-09-27 2015-05-13 株式会社京浜 半导体控制装置
US9048721B2 (en) * 2011-09-27 2015-06-02 Keihin Corporation Semiconductor device
WO2013046400A1 (ja) * 2011-09-29 2013-04-04 トヨタ自動車株式会社 半導体装置
JP5661052B2 (ja) * 2012-01-18 2015-01-28 三菱電機株式会社 パワー半導体モジュールおよびその製造方法
US9202766B2 (en) 2012-04-27 2015-12-01 Stmicroelectronics S.R.L. Package for power device and method of making the same
US8890313B2 (en) 2012-04-27 2014-11-18 Stmicroelectronics S.R.L. Through-hole electronic device with double heat-sink
US9125322B2 (en) 2012-04-27 2015-09-01 Stmicroelectronics S.R.L. Through-hole mounting system with heat sinking elements clamped to one another against insulating body
DE102012211952A1 (de) * 2012-07-09 2014-01-30 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit mindestens einem stressreduzierenden Anpasselement
DE112013003902T8 (de) * 2012-09-07 2015-05-07 Hitachi Automotive Systems, Ltd. Halbleitervorrichtung und Verfahren zu ihrer Herstellung
CN104704629A (zh) * 2012-10-16 2015-06-10 富士电机株式会社 冷却构造体和发热体
US9093437B2 (en) * 2012-12-04 2015-07-28 Infineon Technologies Ag Packaged vertical power device comprising compressive stress and method of making a packaged vertical power device
US8963303B2 (en) * 2013-02-22 2015-02-24 Stmicroelectronics S.R.L. Power electronic device
JP2014165231A (ja) * 2013-02-22 2014-09-08 Fujitsu Ltd 電子部品ユニット及び固定構造
US8754521B1 (en) * 2013-03-13 2014-06-17 Freescale Semiconductor, Inc. Semiconductor device assembly having a heat spreader
JP5796599B2 (ja) 2013-05-23 2015-10-21 株式会社デンソー 半導体モジュールおよびスイッチング素子の駆動装置
DE102013219245A1 (de) * 2013-09-25 2015-03-26 Siemens Aktiengesellschaft Leistungsmodul mit Einfassung
US9207153B2 (en) * 2013-09-30 2015-12-08 Lg Chem, Ltd. Test jig
KR20150049265A (ko) * 2013-10-29 2015-05-08 삼성전자주식회사 반도체소자 패키지 및 그 제조방법
JPWO2015107871A1 (ja) * 2014-01-15 2017-03-23 パナソニックIpマネジメント株式会社 半導体装置
JP2015144216A (ja) * 2014-01-31 2015-08-06 株式会社東芝 半導体装置及びその製造方法
JP6295768B2 (ja) * 2014-03-26 2018-03-20 株式会社デンソー 半導体装置の製造方法
JP2015201625A (ja) 2014-03-31 2015-11-12 株式会社東芝 半導体モジュール及び半導体モジュールの製造方法
WO2015153903A1 (en) * 2014-04-02 2015-10-08 Kyocera America, Inc. Heat management in electronics packaging
DE102014212455A1 (de) * 2014-06-27 2015-12-31 Robert Bosch Gmbh Diode mit einem plattenförmigen Halbleiterelement
JP2016072281A (ja) * 2014-09-26 2016-05-09 三菱電機株式会社 半導体装置
US9397053B2 (en) * 2014-10-15 2016-07-19 Hong Kong Applied Science and Technology Research Institute Company Limited Molded device with anti-delamination structure providing multi-layered compression forces
US20160225684A1 (en) * 2015-02-04 2016-08-04 Zowie Technology Corporation Semiconductor Package Structure and Manufacturing Method Thereof
JP2016213346A (ja) * 2015-05-11 2016-12-15 株式会社デンソー 半導体装置
DE102015108700A1 (de) * 2015-06-02 2016-12-08 Infineon Technologies Austria Ag Halbleiter-Leistungs-Package und Verfahren zu ihrer Herstellung
CN105161467A (zh) * 2015-08-14 2015-12-16 株洲南车时代电气股份有限公司 一种用于电动汽车的功率模块
CN105355609A (zh) * 2015-11-30 2016-02-24 南京长峰航天电子科技有限公司 一种散热封装结构

Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3295089A (en) * 1963-10-11 1966-12-27 American Mach & Foundry Semiconductor device
US3652903A (en) * 1970-11-09 1972-03-28 Gen Electric Fluid cooled pressure assembly
US4196442A (en) * 1977-06-03 1980-04-01 Hitachi, Ltd. Semiconductor device
US4240099A (en) * 1978-03-10 1980-12-16 Licentia Patent-Verwaltungs-G.M.B.H. Semiconductor device plastic jacket having first and second annular sheet metal strips with corrugated outer edges embedded in said plastic jacket
US4392153A (en) * 1978-05-01 1983-07-05 General Electric Company Cooled semiconductor power module including structured strain buffers without dry interfaces
US4470063A (en) * 1980-11-19 1984-09-04 Hitachi, Ltd. Copper matrix electrode having carbon fibers therein
JPS61147539A (en) * 1984-12-21 1986-07-05 Toshiba Corp Manufacture of semiconductor rectifier
US4935803A (en) * 1988-09-09 1990-06-19 Motorola, Inc. Self-centering electrode for power devices
US5006921A (en) * 1988-03-31 1991-04-09 Kabushiki Kaisha Toshiba Power semiconductor switching apparatus with heat sinks
US5276586A (en) * 1991-04-25 1994-01-04 Hitachi, Ltd. Bonding structure of thermal conductive members for a multi-chip module
US5352629A (en) * 1993-01-19 1994-10-04 General Electric Company Process for self-alignment and planarization of semiconductor chips attached by solder die adhesive to multi-chip modules
JPH06291223A (ja) * 1992-04-09 1994-10-18 Fuji Electric Co Ltd 半導体装置
US5563076A (en) * 1993-09-29 1996-10-08 Fuji Electric Co., Ltd. Process for adjusting heights of plural semiconductor devices on a circuit board
JPH0945773A (ja) * 1995-07-28 1997-02-14 Nec Corp 金属薄膜の形成方法および形成装置
US5669546A (en) * 1994-03-17 1997-09-23 Fuji Electric Co., Ltd. Apparatus for manufacturing semiconductor device and method of manufacturing the semiconductor device using the same
US5856913A (en) * 1996-04-29 1999-01-05 Semikron Elektronik Gmbh Multilayer semiconductor device having high packing density
EP0939436A2 (de) * 1998-02-27 1999-09-01 Lucent Technologies Inc. Herstellung von Flip-Chip-Anordnungen
JPH11284176A (ja) * 1998-03-27 1999-10-15 Hitachi Haramachi Semiconductor Ltd 半導体装置
JP2000068447A (ja) * 1998-08-26 2000-03-03 Toyota Central Res & Dev Lab Inc パワーモジュール
EP1005089A1 (de) * 1998-11-27 2000-05-31 Alstom Holdings Leistungshalbleiter
EP1014451A1 (de) * 1997-03-26 2000-06-28 Hitachi, Ltd. Flache halbleiteranordnung und stromrichter mit derselben

Family Cites Families (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1004020A (en) * 1964-04-24 1965-09-08 Standard Telephones Cables Ltd Improvements in or relating to the mounting of electrical components
US3523215A (en) * 1968-03-19 1970-08-04 Westinghouse Electric Corp Stack module for flat package semiconductor device assemblies
DE2556749A1 (de) 1975-12-17 1977-06-23 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement in scheibenzellenbauweise
JPS5440569A (en) 1977-09-06 1979-03-30 Mitsubishi Electric Corp Semiconductor device and its manufacture
JPS5495183A (en) 1978-01-13 1979-07-27 Mitsubishi Electric Corp Pressure contact-type semiconductor device
US4546374A (en) 1981-03-23 1985-10-08 Motorola Inc. Semiconductor device including plateless package
US4620215A (en) * 1982-04-16 1986-10-28 Amdahl Corporation Integrated circuit packaging systems with double surface heat dissipation
JPS5931042A (en) 1982-08-12 1984-02-18 Mitsubishi Electric Corp Semiconductor device with high frequency and output
JPH0374371B2 (de) 1982-08-30 1991-11-26
US4538170A (en) 1983-01-03 1985-08-27 General Electric Company Power chip package
GB2146174B (en) 1983-09-06 1987-04-23 Gen Electric Hermetic power chip packages
US4646129A (en) 1983-09-06 1987-02-24 General Electric Company Hermetic power chip packages
US4558345A (en) 1983-10-27 1985-12-10 Rca Corporation Multiple connection bond pad for an integrated circuit device and method of making same
JPH0347578B2 (de) 1983-10-31 1991-07-19 Tanaka Electronics Ind
JPS60137042A (en) 1983-12-26 1985-07-20 Matsushita Electronics Corp Resin-sealed semiconductor device
JPS60235430A (en) 1984-05-09 1985-11-22 Hitachi Ltd Semiconductor device
JPS61141751A (en) 1984-12-14 1986-06-28 Mitsubishi Petrochem Co Ltd Hydrogenated block copolymer composition
JPS61166051A (en) 1985-01-17 1986-07-26 Matsushita Electronics Corp Resin seal type semiconductor device
JPS61251043A (en) 1985-04-30 1986-11-08 Hitachi Ltd Compression bonded type semiconductor device
JPS61265849A (en) 1985-05-20 1986-11-25 Sharp Corp Power semiconductor device
JPS6292349A (en) 1985-10-17 1987-04-27 Mitsubishi Electric Corp Cooling device for semiconductor element
JPS62141751A (en) 1985-12-16 1987-06-25 Fuji Electric Co Ltd Flat semiconductor element stack
JPH077810B2 (ja) 1986-06-06 1995-01-30 株式会社日立製作所 半導体装置
JPS6396946A (en) 1986-10-13 1988-04-27 Mitsubishi Electric Corp Semiconductor device
JPS63102326A (en) 1986-10-20 1988-05-07 Hitachi Cable Ltd Clad material
JPH0546973B2 (de) 1987-05-15 1993-07-15 Tokyo Shibaura Electric Co
JP2579315B2 (ja) 1987-06-17 1997-02-05 新光電気工業株式会社 セラミツクパツケ−ジ
JPH01228138A (en) 1988-03-09 1989-09-12 Fuji Electric Co Ltd Sheathing structure of two-terminal semiconductor element
US5260604A (en) 1988-09-27 1993-11-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with improved immunity to contact and conductor defects
JPH02117157A (en) 1988-10-26 1990-05-01 Mitsubishi Electric Corp Semiconductor device
JPH02177157A (en) 1988-12-28 1990-07-10 Toshiba Audio Video Eng Corp Tape loader
US5229646A (en) 1989-01-13 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a copper wires ball bonded to aluminum electrodes
JPH0320067A (en) 1989-04-29 1991-01-29 Tokin Corp Semiconductor device fitted with ceramic heat-radiating fins
FR2660797A1 (fr) 1990-04-06 1991-10-11 Motorola Semiconducteurs Boitier d'encapsulage perfectionne pour dispositif a semiconducteur.
JPH0412555A (en) 1990-05-02 1992-01-17 Matsushita Electron Corp Semiconductor device
JPH0427145A (en) 1990-05-22 1992-01-30 Seiko Epson Corp Semiconductor device
KR950010283B1 (ko) * 1990-05-31 1995-09-12 야마지 게이조오 매립전극을 가지는 반도체장치 및 그의 제조방법
JPH04103150A (en) 1990-08-23 1992-04-06 Mitsubishi Materials Corp Ic mounting board
US5293301A (en) * 1990-11-30 1994-03-08 Shinko Electric Industries Co., Ltd. Semiconductor device and lead frame used therein
JP2905609B2 (ja) 1991-02-05 1999-06-14 三菱電機株式会社 樹脂封止型半導体装置
EP0499707B1 (de) 1991-02-22 1996-04-03 Asea Brown Boveri Ag Abschaltbares Hochleistungs-Halbleiterbauelement
JP3061891B2 (ja) 1991-06-21 2000-07-10 キヤノン株式会社 半導体装置の製造方法
JPH05109919A (ja) 1991-10-12 1993-04-30 Nippondenso Co Ltd 混成集積回路
US5248853A (en) 1991-11-14 1993-09-28 Nippondenso Co., Ltd. Semiconductor element-mounting printed board
JPH05283562A (ja) 1992-03-31 1993-10-29 Toshiba Corp 樹脂封止型半導体装置
JPH05326808A (ja) * 1992-05-15 1993-12-10 Ibiden Co Ltd 電子部品搭載用基板およびこれを用いた半導体装置
DE4326207A1 (de) * 1992-10-06 1994-04-07 Hewlett Packard Co Mechanisch schwimmendes Mehr-Chip-Substrat
JP3371504B2 (ja) 1993-01-25 2003-01-27 株式会社デンソー 合金電極にワイヤボンディングされた半導体装置及び合金電極の製造方法
JPH06291235A (ja) * 1993-03-31 1994-10-18 Sanyo Electric Co Ltd 混成集積回路
JP2504913B2 (ja) 1993-06-08 1996-06-05 住友ベークライト株式会社 ヒ―トシンク搭載型半導体装置及びその製造方法並びに半導体装置用ヒ―トシンク
JPH077125A (ja) * 1993-06-15 1995-01-10 Shinko Electric Ind Co Ltd 多層リードフレーム
US5396403A (en) * 1993-07-06 1995-03-07 Hewlett-Packard Company Heat sink assembly with thermally-conductive plate for a plurality of integrated circuits on a substrate
JPH0738013A (ja) 1993-07-22 1995-02-07 Origin Electric Co Ltd 複合ベース部材及び電力用半導体装置
JPH0745765A (ja) 1993-07-27 1995-02-14 Fuji Electric Co Ltd 樹脂封止型半導体装置の樹脂封止法
JP3225706B2 (ja) 1993-08-25 2001-11-05 ソニー株式会社 半導体装置におけるバリアメタル層の形成方法
US5641997A (en) 1993-09-14 1997-06-24 Kabushiki Kaisha Toshiba Plastic-encapsulated semiconductor device
DE69321965D1 (de) 1993-12-24 1998-12-10 Cons Ric Microelettronica MOS-Leistungs-Chip-Typ und Packungszusammenbau
DE4403996A1 (de) * 1994-02-09 1995-08-10 Bosch Gmbh Robert Gleichrichteranordnung für einen Drehstromgenerator
US5723882A (en) * 1994-03-10 1998-03-03 Nippondenso Co., Ltd. Insulated gate field effect transistor having guard ring regions
JPH07273276A (ja) 1994-03-28 1995-10-20 Nissan Motor Co Ltd パワー素子とスナバ素子の接続構造及びその実装構造
JPH0845874A (ja) 1994-07-30 1996-02-16 Mitsumi Electric Co Ltd 半導体装置
US6124179A (en) 1996-09-05 2000-09-26 Adamic, Jr.; Fred W. Inverted dielectric isolation process
JPH08191145A (ja) 1995-01-12 1996-07-23 Fuji Electric Co Ltd 絶縁ゲート型半導体素子およびその製造方法
JP3269745B2 (ja) 1995-01-17 2002-04-02 株式会社日立カーエンジニアリング モジュール型半導体装置
JP3258200B2 (ja) 1995-05-31 2002-02-18 株式会社東芝 圧接型半導体装置
JP3272242B2 (ja) 1995-06-09 2002-04-08 三洋電機株式会社 半導体装置
JP3850054B2 (ja) 1995-07-19 2006-11-29 三菱電機株式会社 半導体装置
US5726466A (en) 1995-09-11 1998-03-10 Kabushiki Kaisha Toshiba Press pack power semiconductor device incorporating a plurality of semiconductor elements
JPH09148492A (ja) 1995-11-17 1997-06-06 Murata Mfg Co Ltd 電子部品パッケージ装置
US5801455A (en) * 1996-02-02 1998-09-01 Edward G. Karnig Apparatus and method for disarming automobile alarm system
JP3070473B2 (ja) 1996-02-28 2000-07-31 日本電気株式会社 半導体装置の実装方法及び構造
JPH09237868A (ja) 1996-02-29 1997-09-09 Hitachi Ltd 半導体モジュール
JP3510039B2 (ja) 1996-03-15 2004-03-22 株式会社デンソー 半導体装置およびその製造方法
JPH1065072A (ja) 1996-08-20 1998-03-06 Taiyo Yuden Co Ltd 放熱電極構造
WO1998012748A1 (en) 1996-09-18 1998-03-26 Hitachi, Ltd. Junction semiconductor module
JPH10125700A (ja) 1996-10-17 1998-05-15 Hitachi Ltd 加圧接触型半導体装置及びその組み立て方法
JP2914342B2 (ja) * 1997-03-28 1999-06-28 日本電気株式会社 集積回路装置の冷却構造
JPH11186469A (ja) 1997-12-22 1999-07-09 Seiko Epson Corp 半導体装置
JPH11204803A (ja) 1998-01-13 1999-07-30 Tokin Corp 半導体装置の製造方法
JP4091159B2 (ja) 1998-03-10 2008-05-28 株式会社デンソー 圧接型半導体装置
JPH11284103A (ja) 1998-03-31 1999-10-15 Fuji Electric Co Ltd 樹脂モールド半導体装置
JP3152209B2 (ja) 1998-07-07 2001-04-03 日本電気株式会社 半導体装置及びその製造方法
JP3922809B2 (ja) 1998-07-09 2007-05-30 株式会社東芝 半導体装置
JP2000091485A (ja) 1998-07-14 2000-03-31 Denso Corp 半導体装置
US6072240A (en) * 1998-10-16 2000-06-06 Denso Corporation Semiconductor chip package
JP4085536B2 (ja) 1998-11-09 2008-05-14 株式会社デンソー 電気機器およびその製造方法並びに圧接型半導体装置
JP3180800B2 (ja) 1999-04-08 2001-06-25 カシオ計算機株式会社 半導体装置及びその製造方法
JP2001118961A (ja) 1999-10-15 2001-04-27 Mitsubishi Electric Corp 樹脂封止型電力用半導体装置及びその製造方法
JP2001189412A (ja) * 1999-12-27 2001-07-10 Mitsubishi Electric Corp 半導体装置および半導体実装方法
JP3637277B2 (ja) * 2000-03-21 2005-04-13 大塚化学ホールディングス株式会社 難燃剤、及び難燃性樹脂組成物、及び成形物、及び電子部品
KR100407448B1 (ko) 2000-06-12 2003-11-28 가부시키가이샤 히타치세이사쿠쇼 전자 기기 및 반도체 장치
JP2002184986A (ja) 2000-12-13 2002-06-28 Mitsubishi Electric Corp 電界効果型半導体装置
EP1353385B1 (de) 2001-01-19 2014-09-24 Mitsubishi Denki Kabushiki Kaisha Halbleiteranordnung
US6815767B2 (en) 2001-02-01 2004-11-09 Mitsubishi Denki Kabushiki Kaisha Insulated gate transistor
JP4479121B2 (ja) 2001-04-25 2010-06-09 株式会社デンソー 半導体装置の製造方法

Patent Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3295089A (en) * 1963-10-11 1966-12-27 American Mach & Foundry Semiconductor device
US3652903A (en) * 1970-11-09 1972-03-28 Gen Electric Fluid cooled pressure assembly
US4196442A (en) * 1977-06-03 1980-04-01 Hitachi, Ltd. Semiconductor device
US4240099A (en) * 1978-03-10 1980-12-16 Licentia Patent-Verwaltungs-G.M.B.H. Semiconductor device plastic jacket having first and second annular sheet metal strips with corrugated outer edges embedded in said plastic jacket
US4392153A (en) * 1978-05-01 1983-07-05 General Electric Company Cooled semiconductor power module including structured strain buffers without dry interfaces
US4470063A (en) * 1980-11-19 1984-09-04 Hitachi, Ltd. Copper matrix electrode having carbon fibers therein
JPS61147539A (en) * 1984-12-21 1986-07-05 Toshiba Corp Manufacture of semiconductor rectifier
US5006921A (en) * 1988-03-31 1991-04-09 Kabushiki Kaisha Toshiba Power semiconductor switching apparatus with heat sinks
US4935803A (en) * 1988-09-09 1990-06-19 Motorola, Inc. Self-centering electrode for power devices
US5276586A (en) * 1991-04-25 1994-01-04 Hitachi, Ltd. Bonding structure of thermal conductive members for a multi-chip module
JPH06291223A (ja) * 1992-04-09 1994-10-18 Fuji Electric Co Ltd 半導体装置
US5352629A (en) * 1993-01-19 1994-10-04 General Electric Company Process for self-alignment and planarization of semiconductor chips attached by solder die adhesive to multi-chip modules
US5563076A (en) * 1993-09-29 1996-10-08 Fuji Electric Co., Ltd. Process for adjusting heights of plural semiconductor devices on a circuit board
US5669546A (en) * 1994-03-17 1997-09-23 Fuji Electric Co., Ltd. Apparatus for manufacturing semiconductor device and method of manufacturing the semiconductor device using the same
JPH0945773A (ja) * 1995-07-28 1997-02-14 Nec Corp 金属薄膜の形成方法および形成装置
US5856913A (en) * 1996-04-29 1999-01-05 Semikron Elektronik Gmbh Multilayer semiconductor device having high packing density
EP1014451A1 (de) * 1997-03-26 2000-06-28 Hitachi, Ltd. Flache halbleiteranordnung und stromrichter mit derselben
EP0939436A2 (de) * 1998-02-27 1999-09-01 Lucent Technologies Inc. Herstellung von Flip-Chip-Anordnungen
JPH11284176A (ja) * 1998-03-27 1999-10-15 Hitachi Haramachi Semiconductor Ltd 半導体装置
JP2000068447A (ja) * 1998-08-26 2000-03-03 Toyota Central Res & Dev Lab Inc パワーモジュール
EP1005089A1 (de) * 1998-11-27 2000-05-31 Alstom Holdings Leistungshalbleiter

Also Published As

Publication number Publication date Type
US6703707B1 (en) 2004-03-09 grant
DE10058446B4 (de) 2012-12-27 grant
US6891265B2 (en) 2005-05-10 grant
US20040097082A1 (en) 2004-05-20 application
FR2801423B1 (fr) 2004-04-23 grant
US20050167821A1 (en) 2005-08-04 application
US20040070060A1 (en) 2004-04-15 application
FR2801423A1 (fr) 2001-05-25 application
US20040089941A1 (en) 2004-05-13 application
US6967404B2 (en) 2005-11-22 grant
DE10066443B4 (de) 2011-08-11 grant
US20040089940A1 (en) 2004-05-13 application
DE10066446B4 (de) 2011-09-29 grant
US6992383B2 (en) 2006-01-31 grant
US20040089925A1 (en) 2004-05-13 application
US6798062B2 (en) 2004-09-28 grant
DE10066443B8 (de) 2012-04-19 grant
DE10066442B4 (de) 2011-09-22 grant
US6960825B2 (en) 2005-11-01 grant
DE10066441B4 (de) 2012-10-18 grant
US6998707B2 (en) 2006-02-14 grant
US20040070072A1 (en) 2004-04-15 application
DE10058446A1 (de) 2001-05-31 application
DE10066445B4 (de) 2011-06-22 grant
US20040089942A1 (en) 2004-05-13 application

Similar Documents

Publication Publication Date Title
DE29907287U1 (de) Drehgriff-Bremsvorrichtung
DE29900548U1 (de) Sonnenschutzvorrichtung
DE29901041U1 (de) Anschlußeinrichtung
RU99101838A (ru) Полупроводниковое запоминающее устройство
DE29809869U1 (de) Reflektorvorrichtung
DE29814384U1 (de) Sauggerät
DE29811252U1 (de) Steckdosenvorrichtung
DE29900264U1 (de) Verriegelungsvorrichtung
DE29902106U1 (de) Transportvorrichtung
DE29800323U1 (de) Transportvorrichtung
DE69610457T2 (de) Halbleitervorrichtung
DE29810659U1 (de) Durchglas-Präsentationsvorrichtung
DE19882938T1 (de) Koaxialkontaktanordnungs-Vorrichtung
DE29818509U1 (de) Einhängbare Stützvorrichtung
DE69903671T2 (de) Integriertes auflichtprojektionssystem
DE29902801U1 (de) Warenausgabegerät
DE29804029U1 (de) Strahlvorrichtung
DE29803144U1 (de) Anschlagvorrichtung
DE9417362U1 (de) Halbleiteranordnung
DE29907454U1 (de) Beleuchtungseinrichtung
DE29907445U1 (de) Transportvorrichtung
DE29902327U1 (de) Behälter-Füllgerät
DE29901757U1 (de) Planen-Wascheinrichtung
DE29904499U1 (de) Blendenvorrichtung
DE29818637U1 (de) Transportvorrichtung

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
Q171 Divided out to:

Ref document number: 10066446

Country of ref document: DE

Kind code of ref document: P

Ref document number: 10066443

Country of ref document: DE

Kind code of ref document: P

Ref document number: 10066441

Country of ref document: DE

Kind code of ref document: P

Ref document number: 10066445

Country of ref document: DE

Kind code of ref document: P

8172 Supplementary division/partition in:

Ref document number: 10066441

Country of ref document: DE

Kind code of ref document: P

Ref document number: 10066443

Country of ref document: DE

Kind code of ref document: P

Ref document number: 10066446

Country of ref document: DE

Kind code of ref document: P

Ref document number: 10066445

Country of ref document: DE

Kind code of ref document: P

8172 Supplementary division/partition in:

Ref document number: 10066442

Country of ref document: DE

Kind code of ref document: P

Q171 Divided out to:

Ref document number: 10066442

Country of ref document: DE

Kind code of ref document: P

R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R130 Divisional application to

Ref document number: 10066501

Country of ref document: DE

Effective date: 20120829

Ref document number: 10066442

Country of ref document: DE

Effective date: 20120829

Ref document number: 10066445

Country of ref document: DE

Effective date: 20120829

Ref document number: 10066441

Country of ref document: DE

Effective date: 20120829

Ref document number: 10066446

Country of ref document: DE

Effective date: 20120829

Ref document number: 10066443

Country of ref document: DE

Effective date: 20120829

R020 Patent grant now final

Effective date: 20130328