DE10011548A1 - Thermally stable layer system used for reflecting extreme UV rays consists of layer pairs made up of a barrier layer of molybdenum silicide between a molybdenum layer and a silicon layer - Google Patents
Thermally stable layer system used for reflecting extreme UV rays consists of layer pairs made up of a barrier layer of molybdenum silicide between a molybdenum layer and a silicon layerInfo
- Publication number
- DE10011548A1 DE10011548A1 DE2000111548 DE10011548A DE10011548A1 DE 10011548 A1 DE10011548 A1 DE 10011548A1 DE 2000111548 DE2000111548 DE 2000111548 DE 10011548 A DE10011548 A DE 10011548A DE 10011548 A1 DE10011548 A1 DE 10011548A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- molybdenum
- silicon
- thermally stable
- barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/26—Reflecting filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/283—Interference filters designed for the ultraviolet
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
Abstract
Description
Die Erfindung betrifft ein Verfahren nach dem Oberbe griff des Anspruchs 1.The invention relates to a method according to the Oberbe handle of claim 1.
Optische Bauelemente für die Reflexion von Strahlung im extrem ultravioletten Spektralbereich (EUV: 10 nm. . .100 nm) können durch Dünnschichtsysteme reali siert werden, die im allgemeinen aus etwa 40-60 auf einem Substrat übereinanderliegenden Dünnschichtpaa ren bestehen. Eine geringere Anzahl von Paaren führt zu einem niedrigeren Reflexionswert, während eine hö here Anzahl aufgrund der Absorption der Strahlung keine weitere Steigerung des Reflexionswertes ergibt. Ein beispielhafter Wert für die Dicke eines Schicht paares liegt bei 6,8 nm. Optical components for the reflection of radiation in the extremely ultraviolet spectral range (EUV: 10 nm. .100 nm) can be achieved through thin-film systems be generally based on around 40-60 a superimposed thin-film pair ren exist. A smaller number of pairs leads to a lower reflection value, while a higher Here number due to the absorption of the radiation no further increase in the reflection value results. An exemplary value for the thickness of a layer Paares is 6.8 nm.
Die Schichtsysteme werden hauptsächlich durch PVD- Verfahren hergestellt, wobei sowohl Sputter-, Elek tronenstrahl-Verdampfungs- als auch Laser-Ablations- Verfahren eingesetzt werden können. CVD-Verfahren wurden ebenfalls erfolgreich zur Herstellung derarti ger Schichtsysteme angewendet.The layer systems are mainly made of PVD Process produced, both sputtering, elec electron beam evaporation as well as laser ablation Procedures can be used. CVD process have also been used successfully to produce such ger layer systems applied.
Ein Dünnschichtpaar besteht im allgemeinen aus zwei Materialien mit unterschiedlichen optischen Konstan ten, wobei das eine Material eine möglichst geringe Absorption ("Spacer"), das andere Material dagegen eine große Absorption ("Absorber") aufweisen sollten. Die Auswahl der Dünnschichtmaterialien ist vor allem von der Arbeitswellenlänge des zu realisierenden op tischen Bauelementes abhängig (E. Spiller: Low-loss reflection coatings using absorbing materials, Appl. Phys. Lett., 20, S. 365-367, 1972). So sind auf Sili zium basierende Dünnschichtsysteme für einen Wellen längenbereich jenseits der Si-L-Absorptionskante von 12,4 nm bis ca. 35 nm anwendbar. Für diesen Wellen längenbereich hat sich weiterhin seit über 10 Jahren Molybdän als "Absorber" etabliert, so daß weltweit derzeit fast ausschließlich Mo/Si-Schichtsysteme in diesem Spektralbereich zur Anwendung gelangen (Spil ler, SoftX-Ray Optics, SPIE Optical Engenieering Press, Bellingham, 1994).A thin film pair generally consists of two Materials with different optical constants ten, the one material being as low as possible Absorption ("Spacer"), the other material against it should have a large absorption ("absorber"). The choice of thin film materials is above all on the working wavelength of the op table component (E. Spiller: Low-loss reflection coatings using absorbing materials, Appl. Phys. Lett., 20, pp. 365-367, 1972). So are on sili Zium based thin film systems for one wave length range beyond the Si-L absorption edge of 12.4 nm to approx. 35 nm applicable. For these waves length range has continued for over 10 years Molybdenum established as an "absorber", so that worldwide currently almost exclusively Mo / Si layer systems in this spectral range are used (Spil ler, SoftX-Ray Optics, SPIE Optical Engenieering Press, Bellingham, 1994).
Eine wichtige Charakteristik von im allgemeinen als Spiegel verwendeten Schichtsystemen für den EUV- Spektralbereich ist die maximale Reflexion. Der welt weit höchst gemessene Reflexionswert liegt derzeit bei Mo/Si = 68,7% bei 13,4 nm. (C. Montcalm, J. A. Folta, S. P. Vernon: Pathways to high reflectance Mo/Si multilayer coatings for extreme-untraviolet li thography, 4. International Conference an The Physics of X-Ray Multilayer Structures, 1.-5. Marz 1998, Breckenridge, Colorado, USA).An important characteristic of in general as Layer systems used for the EUV mirror Spectral range is the maximum reflection. The world The highest measured reflection value is currently at Mo / Si = 68.7% at 13.4 nm. (C. Montcalm, J. A. Folta, S.P. Vernon: Pathways to high reflectance Mo / Si multilayer coatings for extreme-untraviolet li thography, 4th International Conference on The Physics of X-Ray Multilayer Structures, 1-5. March 1998, Breckenridge, Colorado, USA).
Dies entspricht etwa 90% der theoretisch erreichba ren Reflexion Rtheor, die in Abhängigkeit von dem zu grundeliegenden Modell 76,7% bei 13,4 nm, beträgt.This corresponds to about 90% of the theoretically achievable ren reflection rtheor which depending on the to basic model is 76.7% at 13.4 nm.
Für viele Anwendungen von EUV-Spiegeln ist neben der
Reflexion auch eine möglichst hohe Stabilität der
Schichtsysteme gegenüber thermischer Belastung erfor
derlich. Da Mo/Si-Schichtsysteme oberhalb einer Tem
peratur von ca. 300°C aufgrund von Interdiffusions-
und Kristallisationseffekten an den Molybdän-Silizi
um-Schichtgrenzflächen degradiert werden, sind
Systeme dieser Materialpaarung nur bis zu einer maxi
malen Arbeitstemperatur von 300°C einsetzbar. Bei ho
hen Photonenenergien oder durch äußere thermische Be
lastung werden die Schichtsysteme in der Praxis je
doch sehr oft höheren Temperaturen ausgesetzt. Beson
ders gilt dies beispielsweise für Kollektorspiegel in
unmittelbarer Nähe der EUV-Strahlungsquelle. Es wur
den bisher zwei Wege verfolgt, Mo/Si-Schichtsysteme
auch bei Temperaturen oberhalb 300°C anzuwen
den, nämlich:
For many applications of EUV mirrors, the highest possible stability of the layer systems against thermal stress is required in addition to reflection. Since Mo / Si layer systems above a temperature of approx. 300 ° C are degraded due to interdiffusion and crystallization effects at the molybdenum-silicon layer interfaces, systems of this material pairing can only be used up to a maximum working temperature of 300 ° C. In the case of high photon energies or due to external thermal stress, the layer systems are very often exposed to higher temperatures in practice. This applies particularly to collector mirrors in the immediate vicinity of the EUV radiation source. So far, two ways have been pursued to use Mo / Si layer systems even at temperatures above 300 ° C, namely:
- 1. intensive Substratkühlung und1. intensive substrate cooling and
- 2. Nutzung von ultradünnen Kohlenstoff-Barriere schichten zwischen Molybdän und Silizium zur Vermeidung von Interdiffusions- und Kristalli sationseffekten an der Molybdän-Silizium-Grenz fläche (H. Takenaka, T. Kawumara; Thermal sta bility of Soft X-Ray Mirrors, J. of Eletr. Spectr. and Relat. Phen., 80, S. 381-384, 1996).2. Use of ultra-thin carbon barrier layers between molybdenum and silicon Avoidance of interdiffusion and crystalli effects on the molybdenum-silicon boundary area (H. Takenaka, T. Kawumara; Thermal sta bility of Soft X-Ray Mirrors, J. of Eletr. Spectr. and Relat. Phen., 80, pp. 381-384, 1996).
Während eine Substratkühlung einen erhöhten apparati ven Gesamtaufwand erfordert, weisen Mo/Si-Schicht systeme mit ultradünnen Kohlenstoff-Barriereschichten eine um ca. 5% verringerte theoretisch erreichbare maximale Reflexion im Vergleich zu reinen Mo/Si- Schichtsystemen auf.During a substrate cooling an increased apparatus ven requires total effort, have Mo / Si layer systems with ultra-thin carbon barrier layers a theoretically achievable decrease of about 5% maximum reflection compared to pure Mo / Si Layer systems.
Es ist daher die Aufgabe der vorliegenden Erfindung, ein thermisch stabiles Schichtssystem zur Reflexion von Strahlung im extremen ultravioletten Spektralbe reich, bestehend aus einer Vielzahl von auf einem Substrat übereinanderliegenden Dünnschichtpaaren je weils aus einer Molybdän- und einer Siliziumschicht, wobei zwischen jeweils zwei benachbarten unterschied lichen Materialschichten eine Barriereschicht ange ordnet ist, zu schaffen, dessen Reflexionswert durch die Barriereschicht in geringerem Maße herabgesetzt wird als durch die Kohlenstoffschicht.It is therefore the object of the present invention a thermally stable layer system for reflection of radiation in the extreme ultraviolet spectrum rich, consisting of a multitude of on one Thin film pairs lying on top of each other because of a molybdenum and a silicon layer, with a difference between two neighboring ones layers of material is arranged to create whose reflective value the barrier layer is reduced to a lesser extent is considered through the carbon layer.
Diese Aufgabe wird erfindungsgemäß gelöst durch das im kennzeichnenden Teil des Anspruchs 1 angegebene Merkmal. Vorteilhafte Weiterbildungen des erfin dungsgemäßen Schichtsystems ergeben sich aus den Un teransprüchen. This object is achieved by the specified in the characterizing part of claim 1 Characteristic. Advantageous further developments of the inventions Layer system according to the invention result from the Un claims.
Dadurch, daß die Barriereschicht aus Molybdän-Silizid (MoSo2) besteht, wird ein Schichtsystem erhalten, dessen Degradation infolge thermischer Belastung erst bei einer Temperatur oberhalb 500°C beginnt, wobei die durch die MoSo2-Barriereschicht bedingte Herab setzung des theoretisch erreichbaren Reflexionswertes bei einer Dicke der Barriereschicht von 0,7 nm nur etwa 2,5% beträgt.The fact that the barrier layer consists of molybdenum silicide (MoSo 2 ), a layer system is obtained, the degradation of which begins due to thermal stress only at a temperature above 500 ° C, the reduction due to the MoSo 2 barrier layer of the theoretically achievable reflection value with a thickness of the barrier layer of 0.7 nm is only about 2.5%.
Zur Herstellung von MoSi2/Si/MoSi2-Schichtsystemen werden vorteilhaft PVD-Verfahren angewendet, wobei jeweils zwischen Mobybdän und Silizium eine etwa 0,7 nm dicke MoSi2-Barriereschicht abgeschieden wird. Die Gesamtdicke einer Molybdän- und einer Siliziumschicht beträgt vorzugsweise etwa 6,8 nm. Jedoch sind die Dicke der Einzelschichten sowie das Design des herzu stellenden Mo/MoSi2/Si/MoSi2-Schichtssytems abhängig von den Anforderungen, die die jeweils bestimmungsge mäße Anwendung an das Schichtsystem stellt. Die Tech nologie zur Herstellung der Mo/MoSi2/Si/MoSi2- Schichtsysteme wird vom Beschichtungsprozeß bestimmt.For the production of MoSi 2 / Si / MoSi 2 layer systems, PVD processes are advantageously used, an approximately 0.7 nm thick MoSi 2 barrier layer being deposited between mobybdenum and silicon. The total thickness of a molybdenum and a silicon layer is preferably about 6.8 nm. However, the thickness of the individual layers and the design of the Mo / MoSi 2 / Si / MoSi 2 layer system to be produced are dependent on the requirements that the respective intended use to the layer system. The technology for the production of the Mo / MoSi 2 / Si / MoSi 2 layer systems is determined by the coating process.
Zur Beurteilung der thermischen Stabilität eines Mo/MoSi2/Si/MoSi2-Schichtsystems wurden mehrere Mo/MoSi2/Si/MoSi2-Spiegel für eine Arbeitswellenlänge von 13,3 nm realisiert. Die Herstellung dieser Spie gel erfolgte mit der DC-Magnetron-Sputter-Technolo gie.To assess the thermal stability of a Mo / MoSi 2 / Si / MoSi 2 layer system, several Mo / MoSi 2 / Si / MoSi 2 mirrors were implemented for a working wavelength of 13.3 nm. These mirrors were manufactured using DC magnetron sputtering technology.
Der Beschichtungsprozeß war durch folgende Parameter
charakterisiert:
Anzahl der
Mo/MoSi2/Si/MoSi2-Schichten: 50
Substrat: Si-(111)-Wafer
Arbeitsgas: Argon
Arbeitsdruck: 0,266 Pa
Sputterleistung Molybdän: 150 W
Sputterleistung Silizium: 200 W
Sputterleistung Molybdän
silicid: 200 W
Sputterrate Molybdän: 0,55 nm/s
Sputterrate Silizium: 0,50 nm/s
Sputterrate Molybdänsilicid: 0,6 nm/s
Substratvorspannung: 100 VThe coating process was characterized by the following parameters:
Number of Mo / MoSi 2 / Si / MoSi 2 layers: 50
Substrate: Si (111) wafer
Working gas: argon
Working pressure: 0.266 Pa
Sputtering power molybdenum: 150 W.
Sputtering power silicon: 200 W.
Sputtering power molybdenum silicide: 200 W
Sputtering rate molybdenum: 0.55 nm / s
Sputtering rate silicon: 0.50 nm / s
Sputter rate molybdenum silicide: 0.6 nm / s
Substrate bias: 100 V
Die bei diesem Schichtsystem maximal gemessene Refle xion betrug R = 59,4%. Die so hergestellten Mo/MoSi2/Si/MoSi2-Spiegel wurden nach dem Beschich tungsprozeß unter Vakuumbedingungen schrittweise bis zu einer Temperatur von 700°C erhitzt. In Auswertung dieser Versuche ergab sich eine thermische Stabilität des /MoSi2/Si/MoSi2-Schichtsystems bis zu einer Tem peratur von 500°C.The maximum measured reflection in this layer system was R = 59.4%. The Mo / MoSi 2 / Si / MoSi 2 mirrors thus produced were gradually heated up to a temperature of 700 ° C. after the coating process under vacuum conditions. The evaluation of these experiments showed a thermal stability of the / MoSi 2 / Si / MoSi 2 layer system up to a temperature of 500 ° C.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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DE2000111548 DE10011548C2 (en) | 2000-02-28 | 2000-02-28 | Process for producing a thermally stable layer system for reflecting radiation in the extreme ultraviolet spectral range (EUV) |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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DE2000111548 DE10011548C2 (en) | 2000-02-28 | 2000-02-28 | Process for producing a thermally stable layer system for reflecting radiation in the extreme ultraviolet spectral range (EUV) |
Publications (2)
Publication Number | Publication Date |
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DE10011548A1 true DE10011548A1 (en) | 2001-09-06 |
DE10011548C2 DE10011548C2 (en) | 2003-06-18 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006066563A1 (en) * | 2004-12-23 | 2006-06-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Thermally stable multilayer mirror for the euv spectral region |
WO2007090364A2 (en) * | 2006-02-10 | 2007-08-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Thermally stable multilayer mirror for the euv spectral range |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5319695A (en) * | 1992-04-21 | 1994-06-07 | Japan Aviation Electronics Industry Limited | Multilayer film reflector for soft X-rays |
US6011646A (en) * | 1998-02-20 | 2000-01-04 | The Regents Of The Unviersity Of California | Method to adjust multilayer film stress induced deformation of optics |
-
2000
- 2000-02-28 DE DE2000111548 patent/DE10011548C2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5319695A (en) * | 1992-04-21 | 1994-06-07 | Japan Aviation Electronics Industry Limited | Multilayer film reflector for soft X-rays |
US6011646A (en) * | 1998-02-20 | 2000-01-04 | The Regents Of The Unviersity Of California | Method to adjust multilayer film stress induced deformation of optics |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006066563A1 (en) * | 2004-12-23 | 2006-06-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Thermally stable multilayer mirror for the euv spectral region |
US7920323B2 (en) | 2004-12-23 | 2011-04-05 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Thermally stable multilayer mirror for the EUV spectral region |
WO2007090364A2 (en) * | 2006-02-10 | 2007-08-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Thermally stable multilayer mirror for the euv spectral range |
WO2007090364A3 (en) * | 2006-02-10 | 2007-09-20 | Fraunhofer Ges Forschung | Thermally stable multilayer mirror for the euv spectral range |
US7986455B2 (en) | 2006-02-10 | 2011-07-26 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Thermally stable multilayer mirror for the EUV spectral range |
Also Published As
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DE10011548C2 (en) | 2003-06-18 |
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