DD96852A1 - - Google Patents

Info

Publication number
DD96852A1
DD96852A1 DD162824A DD16282472A DD96852A1 DD 96852 A1 DD96852 A1 DD 96852A1 DD 162824 A DD162824 A DD 162824A DD 16282472 A DD16282472 A DD 16282472A DD 96852 A1 DD96852 A1 DD 96852A1
Authority
DD
German Democratic Republic
Application number
DD162824A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DD162824A priority Critical patent/DD96852A1/xx
Priority to DE2300021A priority patent/DE2300021A1/en
Priority to FR7308398A priority patent/FR2183678A1/en
Publication of DD96852A1 publication Critical patent/DD96852A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
DD162824A 1972-05-09 1972-05-09 DD96852A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DD162824A DD96852A1 (en) 1972-05-09 1972-05-09
DE2300021A DE2300021A1 (en) 1972-05-09 1973-01-02 DEVICE FOR EPITACTIC DEPOSITION OF CRYSTALLINE MATERIAL, IN PARTICULAR SEMICONDUCTOR MATERIAL
FR7308398A FR2183678A1 (en) 1972-05-09 1973-03-08 Epitaxial crystalline material deposition - esp of semiconductor from vapour phase in quartz glass tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD162824A DD96852A1 (en) 1972-05-09 1972-05-09

Publications (1)

Publication Number Publication Date
DD96852A1 true DD96852A1 (en) 1973-04-12

Family

ID=5486478

Family Applications (1)

Application Number Title Priority Date Filing Date
DD162824A DD96852A1 (en) 1972-05-09 1972-05-09

Country Status (3)

Country Link
DD (1) DD96852A1 (en)
DE (1) DE2300021A1 (en)
FR (1) FR2183678A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2136937A (en) * 1983-03-18 1984-09-26 Philips Electronic Associated A furnace for rapidly heating semiconductor bodies
IT1209570B (en) * 1984-07-19 1989-08-30 Lpe Spa IMPROVEMENT IN EPITAXIAL REACTORS.

Also Published As

Publication number Publication date
DE2300021A1 (en) 1973-11-22
FR2183678A1 (en) 1973-12-21
FR2183678B3 (en) 1976-03-05

Similar Documents

Publication Publication Date Title
JPS4930861A (en)
FR2203255A1 (en)
JPS5146734Y2 (en)
FR2183678B3 (en)
JPS5120583Y2 (en)
JPS5146175B2 (en)
JPS494212U (en)
JPS4891774A (en)
JPS497805A (en)
JPS5234051Y2 (en)
JPS5135792Y2 (en)
CS156683B1 (en)
CS154080B1 (en)
JPS4952124U (en)
JPS496161U (en)
JPS4891394U (en)
CS153677B1 (en)
CS153923B1 (en)
JPS48109020U (en)
JPS48103643U (en)
CS153949B1 (en)
CS156949B1 (en)
CS156943B1 (en)
CS156690B1 (en)
JPS4957589A (en)