DD275709A5 - Schale zur bewehrung eines quarztiegels - Google Patents
Schale zur bewehrung eines quarztiegels Download PDFInfo
- Publication number
- DD275709A5 DD275709A5 DD88320868A DD32086888A DD275709A5 DD 275709 A5 DD275709 A5 DD 275709A5 DD 88320868 A DD88320868 A DD 88320868A DD 32086888 A DD32086888 A DD 32086888A DD 275709 A5 DD275709 A5 DD 275709A5
- Authority
- DD
- German Democratic Republic
- Prior art keywords
- shell
- crucible
- crystal
- melt
- quartz crucible
- Prior art date
Links
- 230000003014 reinforcing effect Effects 0.000 title claims abstract description 13
- 239000013078 crystal Substances 0.000 claims abstract description 60
- 239000010453 quartz Substances 0.000 claims abstract description 53
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 53
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000155 melt Substances 0.000 claims abstract description 32
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 20
- 229920000049 Carbon (fiber) Polymers 0.000 claims abstract description 15
- 239000004917 carbon fiber Substances 0.000 claims abstract description 15
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000003575 carbonaceous material Substances 0.000 claims description 4
- 230000002787 reinforcement Effects 0.000 abstract description 13
- 239000011257 shell material Substances 0.000 description 95
- 238000010438 heat treatment Methods 0.000 description 23
- 229910002804 graphite Inorganic materials 0.000 description 15
- 239000010439 graphite Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 12
- 230000009467 reduction Effects 0.000 description 11
- 238000005260 corrosion Methods 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000009395 breeding Methods 0.000 description 7
- 230000001488 breeding effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000011109 contamination Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 241000196324 Embryophyta Species 0.000 description 3
- 238000005056 compaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 235000015076 Shorea robusta Nutrition 0.000 description 1
- 244000166071 Shorea robusta Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000008710 crystal-8 Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 244000005706 microflora Species 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU874330853A SU1487514A1 (ru) | 1987-10-19 | 1987-10-19 | Подставка под кварцевый тигель ; |
| DE3835646A DE3835646A1 (de) | 1987-10-19 | 1988-10-19 | Schale zur bewehrung eines quarztiegels |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DD275709A5 true DD275709A5 (de) | 1990-01-31 |
Family
ID=39365791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD88320868A DD275709A5 (de) | 1987-10-19 | 1988-10-18 | Schale zur bewehrung eines quarztiegels |
Country Status (3)
| Country | Link |
|---|---|
| DD (1) | DD275709A5 (enrdf_load_stackoverflow) |
| DE (1) | DE3835646A1 (enrdf_load_stackoverflow) |
| SU (1) | SU1487514A1 (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3830929A1 (de) * | 1988-09-12 | 1990-03-15 | Kernforschungsanlage Juelich | Drehdurchfuehrung fuer rezipienten mit heisser wandung |
| KR930004506A (ko) * | 1991-08-29 | 1993-03-22 | 티모티 엔. 비숍 | 실리콘 결정을 성장시키는데 사용되는 유리질 탄소 피복 흑연성분 |
| DE4130253C2 (de) * | 1991-09-12 | 2001-10-04 | Sgl Carbon Ag | Mehrteiliger Stütztiegel und Verfahren zu seiner Herstellung |
| DE4325522C1 (de) * | 1993-07-30 | 1994-11-17 | Schunk Kohlenstofftechnik Gmbh | Tiegel, insbesondere Stütztiegel |
| KR20000022158A (ko) * | 1996-06-27 | 2000-04-25 | 도요탄소 가부시키가이샤 | 단결정 인상용 도가니 및 그 제조방법 |
| DE19652171A1 (de) * | 1996-12-14 | 1998-06-18 | Eric Mix | Verfahren zur thermischen Isolation induktiv geheizter Tiegel und Schmelzen in der Kristallzucht mit kohlenstoffgebundenen Kohlenstofffasern |
| JP4217844B2 (ja) * | 1998-06-18 | 2009-02-04 | ジャパンスーパークォーツ株式会社 | 複合ルツボとその製造方法および再生方法 |
| JP5286589B2 (ja) * | 2008-05-01 | 2013-09-11 | イビデン株式会社 | ルツボ保持部材およびその製造方法 |
| CN112624782A (zh) * | 2020-12-11 | 2021-04-09 | 包头美科硅能源有限公司 | 一种埚帮涂层的使用方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58140392A (ja) * | 1982-02-16 | 1983-08-20 | Komatsu Denshi Kinzoku Kk | シリコン単結晶引上方法およびその装置 |
| JPS63166790A (ja) * | 1986-12-26 | 1988-07-09 | Toshiba Ceramics Co Ltd | シリコン単結晶引上装置 |
-
1987
- 1987-10-19 SU SU874330853A patent/SU1487514A1/ru active
-
1988
- 1988-10-18 DD DD88320868A patent/DD275709A5/de not_active IP Right Cessation
- 1988-10-19 DE DE3835646A patent/DE3835646A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3835646C2 (enrdf_load_stackoverflow) | 1992-05-07 |
| DE3835646A1 (de) | 1989-06-08 |
| SU1487514A1 (ru) | 1990-10-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EPE | Extended patent has ceased | ||
| PV | Patent disclaimer (addendum to changes before extension act) |