DD106525A1 - - Google Patents
Info
- Publication number
- DD106525A1 DD106525A1 DD173505A DD17350573A DD106525A1 DD 106525 A1 DD106525 A1 DD 106525A1 DD 173505 A DD173505 A DD 173505A DD 17350573 A DD17350573 A DD 17350573A DD 106525 A1 DD106525 A1 DD 106525A1
- Authority
- DD
- German Democratic Republic
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1828718A SU438364A1 (ru) | 1972-09-15 | 1972-09-15 | Диодный источник света на карбтде кремни |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DD106525A1 true DD106525A1 (US07909888-20110322-C00008.png) | 1974-06-12 |
Family
ID=20527079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD173505A DD106525A1 (US07909888-20110322-C00008.png) | 1972-09-15 | 1973-09-14 |
Country Status (8)
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200805A (en) * | 1987-12-28 | 1993-04-06 | Hughes Aircraft Company | Silicon carbide:metal carbide alloy semiconductor and method of making the same |
| US5082695A (en) * | 1988-03-08 | 1992-01-21 | 501 Fujitsu Limited | Method of fabricating an x-ray exposure mask |
| US5187547A (en) * | 1988-05-18 | 1993-02-16 | Sanyo Electric Co., Ltd. | Light emitting diode device and method for producing same |
| US4918497A (en) * | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
| US5027168A (en) * | 1988-12-14 | 1991-06-25 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
| JP2509713B2 (ja) * | 1989-10-18 | 1996-06-26 | シャープ株式会社 | 炭化珪素半導体装置およびその製造方法 |
| US5313078A (en) * | 1991-12-04 | 1994-05-17 | Sharp Kabushiki Kaisha | Multi-layer silicon carbide light emitting diode having a PN junction |
| US6403975B1 (en) | 1996-04-09 | 2002-06-11 | Max-Planck Gesellschaft Zur Forderung Der Wissenschafteneev | Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates |
| SE9602993D0 (sv) * | 1996-08-16 | 1996-08-16 | Abb Research Ltd | A bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3030704A (en) * | 1957-08-16 | 1962-04-24 | Gen Electric | Method of making non-rectifying contacts to silicon carbide |
| US2937323A (en) * | 1958-05-29 | 1960-05-17 | Westinghouse Electric Corp | Fused junctions in silicon carbide |
| NL230857A (US07909888-20110322-C00008.png) * | 1958-08-26 | |||
| US3210624A (en) * | 1961-04-24 | 1965-10-05 | Monsanto Co | Article having a silicon carbide substrate with an epitaxial layer of boron phosphide |
| US3517281A (en) * | 1967-01-25 | 1970-06-23 | Tyco Laboratories Inc | Light emitting silicon carbide semiconductor junction devices |
| US3577285A (en) * | 1968-03-28 | 1971-05-04 | Ibm | Method for epitaxially growing silicon carbide onto a crystalline substrate |
| DE1802350C3 (de) * | 1968-10-10 | 1974-01-24 | Tatjana G. Kmita | Elektrolumineszente Halbleiterdiode |
| US3565703A (en) * | 1969-07-09 | 1971-02-23 | Norton Research Corp | Silicon carbide junction diode |
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1972
- 1972-09-15 SU SU1828718A patent/SU438364A1/ru active
-
1973
- 1973-09-05 CA CA180,364A patent/CA1009739A/en not_active Expired
- 1973-09-06 US US05/394,715 patent/US3972749A/en not_active Expired - Lifetime
- 1973-09-07 DE DE2345198A patent/DE2345198B2/de not_active Withdrawn
- 1973-09-07 GB GB4224673A patent/GB1422675A/en not_active Expired
- 1973-09-14 DD DD173505A patent/DD106525A1/xx unknown
- 1973-09-14 CS CS6379A patent/CS167032B1/cs unknown
- 1973-09-14 FR FR7333038A patent/FR2200723B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3972749A (en) | 1976-08-03 |
| CA1009739A (en) | 1977-05-03 |
| DE2345198A1 (de) | 1974-04-25 |
| GB1422675A (en) | 1976-01-28 |
| FR2200723B1 (US07909888-20110322-C00008.png) | 1978-02-10 |
| SU438364A1 (ru) | 1976-07-05 |
| FR2200723A1 (US07909888-20110322-C00008.png) | 1974-04-19 |
| CS167032B1 (US07909888-20110322-C00008.png) | 1976-04-29 |
| DE2345198B2 (de) | 1979-10-18 |
