CN2720645Y - Anti-electrostatic package structure for light-emitting diode - Google Patents

Anti-electrostatic package structure for light-emitting diode Download PDF

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Publication number
CN2720645Y
CN2720645Y CN2004200849918U CN200420084991U CN2720645Y CN 2720645 Y CN2720645 Y CN 2720645Y CN 2004200849918 U CN2004200849918 U CN 2004200849918U CN 200420084991 U CN200420084991 U CN 200420084991U CN 2720645 Y CN2720645 Y CN 2720645Y
Authority
CN
China
Prior art keywords
light
emitting diode
antistatic
encapsulating structure
protection assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2004200849918U
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Chinese (zh)
Inventor
张正宜
徐志宏
谢忠全
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Everlight Electronics Co Ltd
Original Assignee
Everlight Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Everlight Electronics Co Ltd filed Critical Everlight Electronics Co Ltd
Priority to CN2004200849918U priority Critical patent/CN2720645Y/en
Application granted granted Critical
Publication of CN2720645Y publication Critical patent/CN2720645Y/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape

Abstract

The utility model relates to an anti-electrostatic package structure for light emitting diodes, through which a protection assembly and the light emitting diodes are packaged. In order not to influence the light emitting intensity and angle of the light emitting diodes, the utility model reveals three different package structures which respectively use the protection assembly to package the light emitting diodes to both faces of a bracket or brackets of different thicknesses so that the assembly package position of the protection assembly avoids optical transmission paths of the light emitting diodes. The method of packaging the protection assembly is performed by using cohesive material to fix or using face adhesive joint technology to fix.

Description

Light-emitting diode antistatic encapsulating structure
Technical field
The utility model relates to a kind of light-emitting diode antistatic encapsulating structure, particularly a kind of antistatic encapsulating structure that does not influence lumination of light emitting diode intensity and angle.
Background technology
Existing package structure for LED does not have the function of antistatic, to such an extent as to the diode of encapsulation just damages because of electrostatic problem probably in manufacture process or lost efficacy.
Especially blue light and white light-emitting diodes cause antistatic effect poor because of the material problem of chip, cause client's use side to add man-hour in manufacturing, and light-emitting diode component damages because of electrostatic problem or lost efficacy.
Because above-mentioned problem, a kind of antistatic encapsulating structure is badly in need of being designed to solve the problem of part light-emitting diode antistatic effect difference.
The utility model content
Therefore the purpose of this utility model just provides a kind of light-emitting diode antistatic encapsulating structure, in order to prevent the electrostatic breakdown light-emitting diode.
According to above-mentioned purpose of the present utility model, a kind of light-emitting diode antistatic encapsulating structure is proposed.This encapsulating structure will protect assembly and light-emitting diode to be encapsulated in the two sides of support respectively.The protection assembly is bonded in the one side depression of support with jointing material.Then with molded structure with support and protection component package in it, and form a circular-arc recessed cup 35 at the another side of support.Support is exposed to the bottom surface of circular-arc recessed cup.The effective jointing material of light-emitting diodes is fixed on the support, and is connected to electrode on the support with lead.
According to another preferred embodiment of the utility model, this encapsulating structure also is encapsulated in the two sides of support respectively with surface adhering protection assembly and light-emitting diode.Surface adhering protection assembly is that a kind of assembly of will protecting is welded in assembly on the substrate.Surface adhering protection assembly is fixed in the one side of this support by the surface adhering technology.Then with molded structure with support and protection component package in it, and form a circular-arc recessed cup at the another side of support.Support is exposed to the bottom surface of circular-arc recessed cup simultaneously.Light-emitting diode is fixed on the support with jointing material, and is connected to electrode on the support with lead.
According to the another preferred embodiment of the utility model, this encapsulating structure will protect assembly and light-emitting diode to be encapsulated in respectively on the support with depth drop.The support that will have depth drop with molded structure is packaged in it, and forms a circular-arc recessed cup in the one side of support.Two sub-depth drop supports are exposed to circular-arc recessed glass bottom surface simultaneously.Light-emitting diode is fixed on the more shallow submounts, and is connected to electrode on the support, then will protect assembly to be fixed on the darker submounts, and be connected to electrode on the support, fill up circular-arc recessed cup with jointing material at last with lead with lead.
From the above, use light-emitting diode antistatic encapsulating structure of the present utility model, can solve the problem of part light-emitting diode antistatic effect difference.In addition, the encapsulating structure of this creation painstakingly will be protected the fixing position of assembly, avoid the light sources transmit path of light-emitting diode, make lumination of light emitting diode intensity and angle unaffected.
Description of drawings
For above-mentioned and other purpose of the present utility model, feature and advantage can be become apparent,, in conjunction with the accompanying drawings, describe the utility model in detail below with a preferred embodiment
Fig. 1 represents a kind of schematic diagram of protective circuit;
Fig. 2 represents a kind of light-emitting diode antistatic encapsulating structure profile according to the utility model one preferred embodiment;
Fig. 3 represents a kind of light-emitting diode antistatic encapsulating structure profile according to another preferred embodiment of the utility model; And
Fig. 4 represents a kind of light-emitting diode antistatic encapsulating structure profile according to the another preferred embodiment of the utility model.
Embodiment
In order to solve the problem of part light-emitting diode antistatic effect difference, the utility model proposes a kind of anlistatig encapsulating structure.Protect assembly by in encapsulating structure, adding, thereby make light-emitting diode avoid electrostatic breakdown.And the utility model has disclosed the antistatic encapsulating structure that does not influence lumination of light emitting diode intensity and angle.
With reference to Fig. 1, it represents a kind of schematic diagram of protective circuit.Light-emitting diode 20 connection a pair of anodal 24 and negative poles 26, and in parallel by another protection assembly 22 with light-emitting diode 20, but positive pole 24 and negative pole 26 reversal connections.When static is imported by negative pole 26, can static be derived by the path of protection assembly 22.If do not protect the path of assembly 22, static (if voltage is enough big) may destroy light-emitting diode 20.Protection assembly 22 can be light-emitting diode, Schottky diode or Zener diode.
With reference to Fig. 2, it illustrates a kind of light-emitting diode antistatic encapsulating structure profile according to the utility model one preferred embodiment.Influence light-emitting diode 20 luminous intensities and angle for fear of protection assembly 22, this embodiment will protect assembly 22 and light-emitting diode 20 to be encapsulated in the two sides of support respectively.Protection assembly 22 usefulness jointing materials 32 are bonded in the one side depression 36 of support 30, thereby reduction is owing to add the volume that protection assembly 22 is increased.Then support 30 and protection assembly 22 are packaged in it, and form a circular-arc recessed cup 35 at the another side of support with molded structure 34.Support 30 is exposed to the bottom surface of circular-arc recessed cup 35 simultaneously.Light-emitting diode 20 usefulness jointing materials 33 are fixed on the support 30, and are connected to electrode (not drawing) on the support 30 with lead 28.Above-mentioned molded structure can be the combination of epoxy resin, glass fibre, titanium oxide, calcium oxide, liquid crystal polymer, pottery or above-mentioned material.
With reference to Fig. 3, its expression is according to a kind of light-emitting diode antistatic encapsulating structure profile of another preferred embodiment of the utility model.22a has influenced light-emitting diode 20 luminous intensities and angle for fear of surface adhering protection assembly, and this embodiment protects assembly 22a and light-emitting diode 20 to be encapsulated in the two sides of support respectively surface adhering.Be different from the represented embodiment of Fig. 2, present embodiment replaces protection assembly 22 with surface adhering protection assembly 22a.Surface adhering protection assembly 22a is that a kind of assembly 22a that will protect is welded in assembly on the substrate.Surface adhering protection assembly 22a is fixed on the one side of this support by the surface adhering technology.Then support 30 and protection assembly 22 are packaged in it, and form a circular-arc recessed cup 35 at the another side of support with molded structure 34.Support 30 also is exposed to the bottom surface of circular-arc recessed cup 35.Light-emitting diode 20 is fixed on the support 30 with jointing material 33, and is connected to electrode (not drawing) on the support 30 with lead 28.Above-mentioned molded structure can be the combination of epoxy resin, glass fibre, titanium oxide, calcium oxide, liquid crystal polymer, pottery or above-mentioned material.
With reference to Fig. 4, its expression is according to a kind of light-emitting diode antistatic encapsulating structure profile of the another preferred embodiment of the utility model.Influence light-emitting diode 20 luminous intensities and angle for fear of protection assembly 22, this embodiment will protect assembly 22 and light-emitting diode 20 to be encapsulated in respectively on the support with depth drop.The support that will have depth drop with molded structure 34 is packaged in it, and forms a circular-arc recessed cup 35 in the one side of support.Submounts 30a/30b also is exposed to the bottom surface of circular-arc recessed cup 35.Light-emitting diode 20 is fixed on the more shallow submounts 30a, and is connected to electrode (not drawing) on the support with lead 28.Protection assembly 22 is fixed on the darker submounts 30b, and is connected to electrode (not drawing) on the support with lead 28.At last to fill up circular-arc recessed cup 35 with jointing material 33.Above-mentioned molded structure can be the combination of epoxy resin, glass fibre, titanium oxide, calcium oxide, liquid crystal polymer, pottery or above-mentioned material.
By above-mentioned the utility model preferred embodiment as can be known, use light-emitting diode antistatic encapsulating structure of the present utility model, can solve the problem of part light-emitting diode antistatic effect difference.In addition, encapsulating structure of the present utility model painstakingly will be protected the fixing position of assembly, avoid the light sources transmit path of light-emitting diode, make lumination of light emitting diode intensity and angle unaffected.
Though the utility model has been delivered a preferred embodiment in the above; yet it is not in order to limit the utility model; those skilled in the art; in not breaking away from spirit and scope of the present utility model; can do various variations and modification, therefore protection range of the present utility model should be defined by the scope of claim.

Claims (10)

1. light-emitting diode antistatic encapsulating structure is characterized in that, comprises at least:
A support, wherein one side has a depression;
A protection assembly is fixed in this depression;
One encapsulates this depression, and forms the molded structure of a circular-arc recessed cup at the another side of this support; And
A light-emitting diode chip for backlight unit that is fixed in this circular-arc recessed cup.
2. light-emitting diode antistatic encapsulating structure according to claim 1 is characterized in that this protection assembly comprises light-emitting diode, Schottky diode or Zener diode.
3. light-emitting diode antistatic encapsulating structure according to claim 1 is characterized in that this protection assembly is fixed in this depression by jointing material.
4. light-emitting diode antistatic encapsulating structure according to claim 1 is characterized in that this light-emitting diode chip for backlight unit is fixed in this circular-arc recessed cup by jointing material.
5. light-emitting diode antistatic encapsulating structure according to claim 1 is characterized in that this molded structure is the combination of epoxy resin, glass fibre, titanium oxide, calcium oxide, liquid crystal polymer, pottery or above-mentioned material.
6. light-emitting diode antistatic encapsulating structure is characterized in that, comprises at least:
A support has not at conplane two submounts;
A molded structure, this member encapsulate described two submounts and form a circular-arc recessed cup, and expose described two submounts;
A light-emitting diode chip for backlight unit that is fixed on the submounts more shallow in this circular-arc recessed cup; And
A protection assembly that is fixed on the submounts darker in this circular-arc recessed cup.
7. light-emitting diode antistatic encapsulating structure according to claim 6 is characterized in that this light-emitting diode chip for backlight unit is fixed on the submounts more shallow in this circular-arc recessed cup by jointing material.
8. light-emitting diode antistatic encapsulating structure according to claim 6 is characterized in that this protection assembly is fixed on the submounts darker in this circular-arc recessed cup by jointing material.
9. light-emitting diode antistatic encapsulating structure according to claim 6 is characterized in that this protection assembly comprises light-emitting diode, Schottky diode or Zener diode.
10. light-emitting diode antistatic encapsulating structure according to claim 6 is characterized in that this molded structure is the combination of epoxy resin, glass fibre, titanium oxide, calcium oxide, liquid crystal polymer, pottery or above-mentioned material.
CN2004200849918U 2004-07-29 2004-07-29 Anti-electrostatic package structure for light-emitting diode Expired - Lifetime CN2720645Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2004200849918U CN2720645Y (en) 2004-07-29 2004-07-29 Anti-electrostatic package structure for light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2004200849918U CN2720645Y (en) 2004-07-29 2004-07-29 Anti-electrostatic package structure for light-emitting diode

Publications (1)

Publication Number Publication Date
CN2720645Y true CN2720645Y (en) 2005-08-24

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101371358B (en) * 2006-01-20 2010-06-23 许密特有限公司 Package for a light emitting diode with integrated electrostatic discharge protection
US7763896B2 (en) 2007-09-21 2010-07-27 Foxsemicon Integrated Technology, Inc. Light emitting diode with auxiliary electric component
CN102054829A (en) * 2010-11-05 2011-05-11 深圳市华星光电技术有限公司 Encapsulation structure of LED
CN102163685A (en) * 2010-02-21 2011-08-24 福华电子股份有限公司 Material sheet structure of support of light-emitting diode
CN102384405A (en) * 2010-08-27 2012-03-21 罗姆股份有限公司 LED light source unit for backlight of liquid crystal display, and liquid crystal display
CN101521196B (en) * 2008-02-25 2012-03-28 佰鸿工业股份有限公司 Light-emitting diode (LED) and method for preparing LED and base of LED
CN105489560A (en) * 2015-11-30 2016-04-13 广东百圳君耀电子有限公司 Huskless filled and protected circuit element and manufacturing technology thereof
CN105938866A (en) * 2016-06-13 2016-09-14 开发晶照明(厦门)有限公司 LED bracket and LED package structure

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101371358B (en) * 2006-01-20 2010-06-23 许密特有限公司 Package for a light emitting diode with integrated electrostatic discharge protection
US7763896B2 (en) 2007-09-21 2010-07-27 Foxsemicon Integrated Technology, Inc. Light emitting diode with auxiliary electric component
CN101521196B (en) * 2008-02-25 2012-03-28 佰鸿工业股份有限公司 Light-emitting diode (LED) and method for preparing LED and base of LED
CN102163685A (en) * 2010-02-21 2011-08-24 福华电子股份有限公司 Material sheet structure of support of light-emitting diode
CN102384405A (en) * 2010-08-27 2012-03-21 罗姆股份有限公司 LED light source unit for backlight of liquid crystal display, and liquid crystal display
CN102384405B (en) * 2010-08-27 2015-01-14 罗姆股份有限公司 LED light source unit for backlight of liquid crystal display, and liquid crystal display
CN102054829A (en) * 2010-11-05 2011-05-11 深圳市华星光电技术有限公司 Encapsulation structure of LED
CN105489560A (en) * 2015-11-30 2016-04-13 广东百圳君耀电子有限公司 Huskless filled and protected circuit element and manufacturing technology thereof
CN105938866A (en) * 2016-06-13 2016-09-14 开发晶照明(厦门)有限公司 LED bracket and LED package structure

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C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CX01 Expiry of patent term

Expiration termination date: 20140729

Granted publication date: 20050824