CN2681353Y - Low-noise integration type current-to-voltage image sensor - Google Patents

Low-noise integration type current-to-voltage image sensor Download PDF

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CN2681353Y
CN2681353Y CN 200420001822 CN200420001822U CN2681353Y CN 2681353 Y CN2681353 Y CN 2681353Y CN 200420001822 CN200420001822 CN 200420001822 CN 200420001822 U CN200420001822 U CN 200420001822U CN 2681353 Y CN2681353 Y CN 2681353Y
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circuit
low
output
signal
image sensor
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CN 200420001822
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苏文鸿
许均铭
林鸿文
萧开明
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敦南科技股份有限公司
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Abstract

The utility model discloses a low-noise integration type current-to-voltage image sensor, which belonging to the CMOS process comprises an optical sensing component, an integrator circuit, a secondary sample circuit and an output circuit. The optical sensing component senses the optical variable and exports the sensing signal that is then received by the integrator circuit. In a given time, the secondary sample circuit connectively following the integrator circuit samples the output of the integrator circuit and exports the low noice signal obtained by calculating two sample results. The output circuit receives a plurality of signals exported after the low noice signal exported by the secondary sample circuit being processed. The utility model is structured in the form of the cascade of the optical sensing component, the integrator circuit, the secondary sample circuit and the output circuit. The combination is designed according to different systems adopting the CMOS image technology. The utility model not only preserves the advantages of the low power consumption and good integration of CMOS, but also eliminates the phenomenon of the deviation of circuit characteristics caused by the errors of the process.

Description

低噪声积分式电流转电压的影像传感器 Current image sensor integrated low noise-to-voltage

技术领域 FIELD

本实用新型涉及一种影像传感器,尤其指一种低噪声积分式电流转电压的影像传感器,在互补金属氧化物半导体(CMOS)影像芯片高速操作时,会有改善敏感度(sensitivity)不足,及随机噪声(random noise)偏高等问题。 The present invention relates to an image sensor, the image sensor integration particularly to a current-to-voltage type low noise, when (CMOS) imager operating at a high speed complementary metal oxide semiconductor, will improve the sensitivity (Sensitivity) is insufficient, and random noise (random noise) high and other issues.

背景技术 Background technique

由于USB2.0的出现,使得硬件间的接口传输速度加快,因此我们也需要操作速度更快的CMOS影像芯片。 Since the emergence of USB2.0, making the interface transfer speed between hardware accelerated, so we need to operate faster CMOS imaging chip. 在美国专利号US6,445,022所揭示的一种影像传感器,请参照图1,其输出端112所得到的信号是由一光二极管(photodiode)102,一放大器104,一电容108与一开关114所组成的积分器电路110将光电流信号转变而成的电压信号,但是这种架构在电路110中,并未改善电路特性受制程变异影响的现象及电路本身所产生的随机噪声(random noise)的问题。 In an image sensor disclosed in U.S. Patent No. US6,445,022, refer to FIG. 1, the signal which is output terminal 112 is obtained by a light emitting diode (photodiode) 102, an amplifier 104, a capacitor 108 and a switch 110 114 integrator circuit composed of the current signal into an optical signal obtained by voltage, but this architecture in circuit 110, circuit characteristics are not restricted to improve the impact of process variations phenomena and random noise (random noise generated by the circuit itself )The problem. 因其无法在高速操作的要求下,消除随机噪声以提高信号噪声比(S/N;signal and noise ratio)。 Not at the request of its high-speed operation, to eliminate random noise to improve the signal to noise ratio (S / N; signal and noise ratio).

实用新型内容本实用新型提出一改良的低噪声积分式电流转电压的影像传感器,消除电路所产生的随机噪声,提高信号噪声比,最后藉由输出电路做调整后再输出。 SUMMARY The present invention proposes an improved low-noise current integral voltage transfer image sensor, eliminating the random noise generated by the circuit, to improve signal to noise ratio, the final adjustments made by the output circuit after the output.

为了达到上述目的,本实用新型提供了一种低噪声积分式电流转电压的影像传感器,适用于CMOS制程,包括:一光感测组件,用来感测光变量并输出感测信号;一积分器电路,接收该光感测组件的感测信号;一相关二次取样电路(Correlated Double Sampling),连接于该积分器电路之后,并在特定时间时,对该积分器的输出作取样,并将两次取样结果运算后,得出一低噪声信号并将该低噪声信号输出;一输出电路,接收该相关二次取样电路所输出的该低噪声信号经处理后输出多个信号。 To achieve the above object, the present invention provides a low-noise image sensor integrating current-to-voltage is applied to a CMOS process, comprising: a light sensing assembly for sensing light and variable output sense signal; an integrator circuit, the light sensing assembly receives a sensing signal; a correlated double sampling circuit (Correlated Double sampling), then connected to the integrator circuit, and at a specific time, the output of the integrator for sampling, and after computing the two sampling result, and obtain a low-noise signal of the low noise signal output; an output circuit, after the low-noise signal processing circuit receives the correlated double sampling the plurality of signals output from the output.

也就是说,本实用新型为一种低噪声积分式电流转电压的影像传感器,包括一光感测组件,一积分器电路,一相关二次取样电路(Correlated DoubleSampling),及一输出电路。 That is, the image sensor of the present invention turn into a low-noise voltage integral current, comprising an optical sensing assembly, an integrator circuit, a correlated double sampling circuit (Correlated DoubleSampling), and an output circuit. 将该感测组件的输出信号,经由该积分器电路与该相关两次取样电路处理后,可将感测组件的输出信号的噪声信号部分滤除,大幅改进信号噪声比(signal noise ratio)。 The output signal of the sensing assembly via the integrator circuit associated with two of the sampling circuit after treatment, the noise signal portion of the output signal of the sensing assembly was filtered off, greatly improved signal to noise ratio (signal noise ratio).

附图说明 BRIEF DESCRIPTION

图1是已知技术电路图。 FIG. 1 is a circuit diagram of the known art.

图2是本实用新型的第一实施例电路图。 FIG 2 is a circuit diagram of a first embodiment of the novel present invention.

图3是本实用新型的第二实施例电路图。 FIG 3 is a circuit diagram of a second embodiment of the novel present invention.

图4是本实用新型的第二实施例的波形图。 FIG 4 is a waveform diagram of the present invention in a second embodiment.

图5是本实用新型的第三实施例电路图。 FIG 5 is a third embodiment of the present invention a circuit diagram.

图6是本实用新型的第三实施例的波形图。 FIG 6 is a waveform chart according to the present invention a third embodiment.

其中,附图标记说明如下:102光二极管 104放大器108电容 114开关110积分器电路 112输出端200光感测组件 210积分器电路211放大器 211'放大器211”放大器 213电容215CMOS开关 215'NMOS开关215”PMOS开关 217反相器219参考电压 220积分器输出端信号230相关二次取样电路 231电容232电容右端电压信号 233单级缓冲器235CMOS开关 235'NMOS开关235”PMOS开关 237反相器238开关信号 238'开关信号239参考电压 240输出端 Wherein the reference numerals are as follows: LED 102 104 110 amplifier 108 capacitor 114 switch circuit 112 the output of integrator 200 the light sensing assembly 210 of the integrator circuit 211 amplifier 211 'amplifier 211 "Amplifier 213 capacitance 215CMOS switch 215 switches 215'NMOS "PMOS switch 217 the reference voltage 220 of the inverter 219 output of the integrator signal 230 correlated double sampling circuit 231 capacitor 232 capacitor voltage signal 233 right single-stage buffer 235CMOS 235'NMOS switching switch 235" PMOS inverters 238 switch 237 switch signal 238 'signal 239 switches the reference voltage output terminal 240

250输出电路 251取样保持电路装置253单增益缓冲器 253'单级缓冲器255单增益缓冲器 255'单级缓冲器S1消除噪声信号的第一步骤S1'消除噪声信号的第一步骤S2消除噪声信号的第二步骤S2'消除噪声信号的第二步骤S3消除噪声信号的第三步骤S3'消除噪声信号的第三步骤S4消除噪声信号的第四步骤S4'消除噪声信号的第四步骤具体实施方式请参照图2,为本实用新型低噪声积分式电流转电压的影像传感器的一实施例。 A first step 250 the output circuit 251 a single sample and hold circuit 253 gain buffer means 253 'is a single-stage single-gain buffer 255 buffer 255' single-stage buffer to eliminate the noise signal S1 is a first step S1 'S2 of the noise signal to eliminate the noise elimination a second step of the signal S2 'of the second step of eliminating the noise signal S3 of the third step of eliminating the noise signal S3' the third step of eliminating the noise signal S4 of the fourth step of eliminating the noise signal S4 'a fourth step of eliminating the noise signal DETAILED DESCRIPTION Referring to FIG. 2 embodiment, the image sensor new low-noise type current-to-voltage integrator of a practical embodiment of the present embodiment. 其中包括一光感测组件200,该光感测组件200可为一光二极管,一积分器电路210,一相关二次取样电路(Correlated Double Sampling)230以及一输出电路250所串接而成。 Which comprises an optical sensing assembly 200, the light-sensing component 200 may be a light emitting diode, an integrator circuit 210, a correlated double sampling circuit (Correlated Double Sampling) 230 and an output circuit 250 concatenation. 其中该积分器电路210更包括一放大器211,一电容213,一开关215以及一反相器217,和一参考电压219。 Wherein the integrator circuit 210 further comprises an amplifier 211, a capacitor 213, a switch 215 and an inverter 217, and a reference voltage 219. 当该光感测组件200将感测的光信号转换为电流信号后,所输出的电流信号会输入到该放大器211的负输入端。 When the optical signal converter 200 will sense the light sensing component is a current signal, the current signal output will be input to the negative input of the amplifier 211. 该电容213跨接于该放大器211的负输入端与输出端之间。 The capacitor 213 connected across the negative input terminal and an output terminal of the amplifier 211. 该开关215与该反相器217并联,并亦跨接在该放大器211的负输入端与输出端之间,且是由一开关信号218控制。 The switch 215 in parallel with the inverter 217, and is also connected across the negative input terminal and an output terminal of the amplifier 211, and is controlled by a switch signal 218.

该相关二次取样电路230,由一电容231连接上述积分器电路210的输出端,其后接着一个单级缓冲器233,为该相关二次取样电路230的输出级缓冲器。 The correlated double sampling circuit 230, a capacitor 231 is connected from the output terminal of the integrator circuit 210, which is followed by a single-stage buffers 233, 230 for the correlated double sampling circuit of the output stage buffer. 在该电容231与该单级缓冲器233之间,接出一个开关235与一个和连接该开关信号238的反相器237,该开关连接一个参考电压239,并且由一开关信号238控制。 Between the capacitor 231 and the single-stage buffer 233 connected to a switch 235 is connected to one of the switch signal 238 and the inverter 237, the switch 239 is connected to a reference voltage, and is controlled by a switch signal 238. 如此的开关装置由电容231的右端接出,以提供该电容231所需的参考电压。 Such a switching device connected to the right end of the capacitor 231, to provide a desired reference voltage of the capacitor 231.

最后,该输出电路250包括一取样保持(sample and hold)电路装置251,连结于上述的相关二次取样电路230的单级缓冲器233的输出端240,其后再分别连接两个放大器253与255,作为单增益缓冲器。 Finally, the output 250 comprises a sample and hold circuit (sample and hold) circuit means 251, coupled to the correlated double sampling circuit 230 is a single stage 233 of the buffer output 240, which again are connected to two amplifiers 253 and 255, as a single gain buffer.

请参照图3及图4,此图为本实用新型另一个实施例。 Referring to FIG. 3 and FIG. 4, this picture shows another embodiment of the present invention. 该光感测组件200将所接收的光信号转换为电流信号后,将该电流信号输入该放大器211',而该输出信号会因噪声影响而有高低起伏,本实用新型即用来将该噪声信号消除。 After converting the light sensing assembly 200 the received optical signal into a current signal, the current signal input to the amplifier 211 ', and the output signal due to noise while ups and downs, the present invention i.e. for the noise signal cancellation. 主要动作分为4个步骤:步骤一(S1):开关信号238激活(ON)使得开关235'短路(short),则光感测组件200的输出信号VSH会直接耦合到积分器输出端信号220。 The main operation is divided into four steps: Step 1 (S1): 238 activates switching signal (ON) so that the switch 235 'output signal VSH short circuit (short), the light-sensing assembly 200 will be coupled directly to the output of the integrator signal 220 . 此时电容231左右两端电压分别为VSH和VREF2,因此电容会储存(VSH-VREF2)的值。 At this time, the voltage across capacitor 231 are approximately VSH and VREF2, therefore the capacitance value is stored (VSH-VREF2) a.

步骤二(S2):积分器输出端信号220保持为VSH,所以电容右端会得到VSH-(VSH-VREF2)的值,即为VREF2。 Step two (S2): output of the integrator signal 220 remains VSH, the capacitance value of the right will be VSH- (VSH-VREF2), namely VREF2.

步骤三(S3):开关信号218激活(ON)使得开关215'短路(short),则光感测组件200的输出信号会由原先的VSH变成VSL且直接耦合到积分器输出端信号220,因此电容右端会得到VSL-(VSH-VREF2)的值,即(VSL-VSH)+VREF2。 Step three (S3): 218 activates switching signal (ON) so that the switch 215 'short circuit (Short), the optical outputs the sensed signal from the original assembly 200 will VSH and VSL becomes directly coupled to the output of the integrator signal 220, the capacitance value of the right will be VSL- (VSH-VREF2), i.e. (VSL-VSH) + VREF2.

步骤四(S4):积分器输出信号220变为VSH,因此电容右端会得到VSH-(VSH-VREF2)的值,即VREF2。 Step four (S4): the integrator output signal 220 becomes VSH, the capacitance value of the right will be VSH- (VSH-VREF2), i.e. VREF2.

在步骤一、二和四时,该电容231右端的输出信号皆为VREF2,而在步骤三时,其值为(VSL-VSH)+VREF2。 In step one, two and four, the output signal of the right end of the capacitor 231 are all VREF2, in step three, a value (VSL-VSH) + VREF2. 因为制程的误差会同时影响VSL及VSH,而最后取两者相减的结果,必定能把制程误差所导致电路特性的变异性降至最低;另一方面由于取VSH与VSL相减的缘故,也因此把光二极管或是电路本身产生的噪声信号抵消,而得到噪声最小的信号。 Because the error will affect the process of VSH and VSL, and the final results of both taking subtraction, must be able to process the error caused by circuit characteristics variability minimized; VSH and VSL other hand, because the subtraction takes sake, therefore the noise cancellation circuit or the LED itself, and the minimum signal obtained.

接着该电容右端电压信号232通过取样保持电路装置251处理后,输入单级缓冲器253'与255'以输出最后的感测信号,由此方法产生的信号可以得到最大的信号噪声比(signal noise ratio)。 Subsequently the capacitor voltage signal 232 by the right sample and hold circuit processing apparatus 251, the single stage input buffer 253 'and 255' to output a final sensing signal, a signal can be obtained by this method produced a maximum signal to noise ratio (signal noise ratio).

本实施例为P型基底的CMOS制程,在符合低成本的需求下开关215'和235'为N沟道金属氧化物半导体(NMOS)晶体管,且其开关信号218与238的导通电压值为高电位。 The present embodiment is a P-type substrate CMOS process, in compliance with the requirements of low-cost switch 215 'and 235' are N-channel metal oxide semiconductor (NMOS) transistor, and the switching signal 218 and the value of the ON voltage 238 high potential. 另外单增益缓冲器253和255也被简化成单级缓冲器253'和255'。 Further single gain buffer 253 and 255 is simplified to a single-stage buffers 253 'and 255'.

请参照图5及图6,此图为本实用新型另一个实施例。 Referring to FIG 5 and FIG 6, this picture shows another embodiment of the present invention. 该光感测组件200将所接收的光信号转换为电流信号后,将该电流信号输入该放大器211”,而该输出信号会因噪声影响而有高低起伏,本实用新型即用来将该噪声信号消除。主要动作分为4个步骤:步骤一(S1'):开关信号238'激活(ON)使得开关235”短路(short),则光感测组件200的输出信号VSL会直接耦合到积分器输出端信号220。 After converting the light sensing assembly 200 the received optical signal into a current signal, the current signal input to the amplifier 211 ', and the output signal due to noise while ups and downs, the present invention i.e. for the noise elimination of the operation signal is divided into four main steps: a step (Sl '): the switching signal 238' activated (ON) so that the switch 235 "output signal VSL short circuit (short), the light-sensing assembly 200 will be coupled directly to the integration the output signal 220. 此时电容231左右两端电压分别为VSL和VREF2,因此电容会储存(VSL-VREF2)的值。 At this time, the voltage across capacitor 231 are approximately VSL and VREF2, therefore the capacitance value is stored (VSL-VREF2) a.

步骤二(S2'):积分器输出端信号220保持为VSL,所以电容231右端会得到VSL-(VSL-VREF2)的值,即VREF2。 Step two (S2 '): output of the integrator 220 signal VSL is kept, the capacitance 231 will get the right values ​​VSL- (VSL-VREF2), i.e. VREF2.

步骤三(S3'):开关信号218'激活(ON)使得开关215”短路(short),则光感测组件200的输出信号会由原先的VSL变成VSH且直接耦合到积分器输出端信号220,因此电容231右端会得到VSH-(VSL-VREF2)的值,即(VSH-VSL)+VREF2。 Step three (S3 '): the switching signal 218' activated (ON) the switch 215 such that a "short circuit (short), the light sensor output signal VSL sensing assembly 200 from the original will become VSH and directly coupled to the output of the integrator signal 220, the capacitance 231 will get the right values ​​VSH- (VSL-VREF2), i.e. (VSH-VSL) + VREF2.

步骤四(S4'):积分器输出信号220变为VSL,因此电容231右端会得到VSL-(VSL-VREF2)的值,即VREF2。 Step four (S4 '): 220 integrator output signal VSL is changed, the capacitance value will be 231 right VSL- (VSL-VREF2), i.e. VREF2.

在步骤一、二和四时,该电容231右端的输出信号皆为VREF2,而在步骤三时,其值为(VSH-VSL)+VREF2。 In step one, two and four, the output signal of the right end of the capacitor 231 are all VREF2, in step three, a value of (VSH-VSL) + VREF2. 因为制程的误差会同时影向VSL及VSH,而最后取两者相减的结果,必定能把制程误差所导致电路特性的变异性降至最低;另一方面由于取VSH与VSL相减的缘故,也因此把光感测组件200或是电路本身产生的噪声信号抵消,而得到噪声最小的信号。 Because the error process to simultaneously Movies VSH and VSL, whichever is the last result of the subtraction, must be able to process the error caused by circuit characteristics variability minimized; VSH and VSL other hand, because the subtraction takes sake , and therefore the noise of the signal light sensing component 200 or the circuit itself are canceled, and the minimum signal obtained.

接着该电容231右端电压信号232通过取样保持电路装置251处理后,输入单级缓冲器253'与255'作为最后的感测信号,由此方法产生的信号可以得到最大的信号噪声比(signal noise ratio)。 Subsequently the capacitor voltage signal 231 232,251 right processing apparatus through the sample hold circuit, a single-stage input buffer 253 'and 255' as the final sensing signal, a signal can be obtained by this method produced a maximum signal to noise ratio (signal noise ratio).

本实施例为N型基底的CMOS制程,在符合低成本的需求下开关215”和235”为P沟道金属氧化物半导体(PMOS)晶体管,且其开关信号218'与238'的导通电压值为低电位。 The ON voltage of the present embodiment is a CMOS process N-type substrate, the switches 215 'and 235' is a P-channel metal oxide semiconductor (PMOS) transistor in compliance with the demand for a low cost, and the switching signal 218 'and 238' of is low. 另外单增益缓冲器253和255也被简化成单级缓冲器253'和255'。 Further single gain buffer 253 and 255 is simplified to a single-stage buffers 253 'and 255'.

以上所述仅为本实用新型的较佳可行实施例,并非因此限定本实用新型的专利范围,故,凡运用本实用新型说明书及附图内容所作的等效结构变化,皆应属于本实用新型的范围内。 Of the present invention described above are only preferred possible embodiment, not therefore define the scope of the present invention patent, therefore, the use of the present invention where the specification and drawings of the structural changes made to the equivalent, should belong to the present invention are In the range.

Claims (10)

1.一种低噪声积分式电流转电压的影像传感器,适用于互补金属氧化物半导体制程,其特征在于包括:一用来感测光变量并输出感测信号的光感测组件;一接收该光感测组件的感测信号的积分器电路;一相关二次取样电路,连接于该积分器电路之后,并在特定时间时,对该积分器的输出作取样,并将两次取样结果运算后,得出一低噪声信号并将该低噪声信号输出;一输出电路,接收该相关二次取样电路所输出的该低噪声信号经处理后输出多个信号。 1. A low noise image sensor integrating current-to-voltage is applied to a complementary metal oxide semiconductor process, comprising: a variable for sensing light and a light sensing component output sense signal; receiving the integrator circuit sense signal light sensing assembly; a correlated double sampling circuit connected to the integrator circuit then, and at a specific time, the output of the integrator for sampling, and the calculation result of the two samples after obtain a low-noise signal and the output of the low noise signal; an output circuit, after the low-noise signal processing circuit receives the correlated double sampling the plurality of signals output from the output.
2.如权利要求1所述的低噪声积分式电流转电压的影像传感器,其特征在于该光感测组件为一种能将光信号换成电流信号的光电组件且适用于N型基底或P型基底的互补金属氧化物半导体制程。 2. The image sensor according to a low-noise type current-to-voltage integrator of the preceding claims, characterized in that the light sensing component into a photovoltaic module capable of an optical signal into a current signal and is applied to N-type substrate or P complementary metal oxide semiconductor type of the substrate manufacturing process.
3.如权利要求1所述的低噪声积分式电流转电压的影像传感器,其特征在于该积分器电路由一放大器,一电荷储存装置,与一互补金属氧化物半导体开关以及一反向器所组成。 3. The image sensor according to a low-noise type current-to-voltage integrator of the preceding claims, characterized in that the integrator circuit by an amplifier, a charge storage device, and a complementary metal oxide semiconductor, and a switch of the inverter composition.
4.如权利要求1所述的低噪声积分式电流转电压的影像传感器,其特征在于该相关二次取样电路由一电容,一互补金属氧化物半导体开关以及一缓冲放大器所组成。 4. The low noise image sensor current integral voltage switch according to claim 1, characterized in that the correlated double sampling circuit composed of a capacitor, a switch, and a complementary metal oxide semiconductor composed of a buffer amplifier.
5.如权利要求3所述的低噪声积分式电流转电压的影像传感器,其特征在于该开关可为N沟道金属氧化物半导体或是P沟道金属氧化物半导体晶体管所组成。 Low noise as claimed in claim 3 integrating current-to-voltage of the image sensor, characterized in that the switch may be composed of N-channel metal oxide semiconductor or a P-channel metal oxide semiconductor transistor.
6.如权利要求1所述的低噪声积分式电流转电压的影像传感器,其特征在于该相关二次取样电路,由一电荷储存装置、一互补金属氧化物半导体开关以及一输出级缓冲器组成。 6. The image sensor according to a low-noise type current-to-voltage integrator of the preceding claims, characterized in that the correlation double sampling circuit, by a charge storage device, a complementary metal oxide semiconductor switches and an output buffer stage consisting of .
7.如权利要求1所述的低噪声积分式电流转电压的影像传感器,其特征在于:该输出电路由一取样保持电路和多个放大器所组成;该多个放大器皆连接于该取样保持电路之后并输出。 7. The low noise integrating said current-to-voltage of the image sensor 1, characterized in that: the output circuit is held by a sampling circuit and composed of a plurality of amplifiers; the plurality of amplifiers are connected to the sample and hold circuit after the output.
8.如权利要求4所述的低噪声积分式电流转电压的影像传感器,其特征在于该开关由互补金属氧化物半导体晶体管组成,亦可为一P沟道金属氧化物半导体晶体管或一N沟道金属氧化物半导体晶体管所组成。 8. The image sensor of claim 4 integrating current-to-voltage low noise claims, characterized in that the switch is a complementary metal oxide semiconductor transistors, may also be a P-channel metal oxide semiconductor transistor or an N-channel channel metal-oxide-semiconductor transistors formed.
9.如权利要求7所述的低噪声积分式电流转电压的影像传感器,其特征在于该多个放大器是由单增益缓冲器或是单级缓冲器所组成。 Low-noise image sensor integrating current-to-voltage as claimed in claim 7, wherein the plurality of single-gain buffer amplifier or by single-stage buffer composed.
10.如权利要求1所述的低噪声积分式电流转电压的影像传感器,其特征在于该光感测组件可为一光二极管。 Low-noise image sensor integrating current-to-voltage as claimed in claim 1, characterized in that the light-sensing component may be a light emitting diode.
CN 200420001822 2004-01-05 2004-01-05 Low-noise integration type current-to-voltage image sensor CN2681353Y (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1958225B (en) * 2005-11-04 2011-01-05 鸿富锦精密工业(深圳)有限公司 Motion platform
CN101673163B (en) * 2008-09-08 2013-11-06 群创光电股份有限公司 A sensing circuit used in a capacitance touching control panel

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1958225B (en) * 2005-11-04 2011-01-05 鸿富锦精密工业(深圳)有限公司 Motion platform
CN101673163B (en) * 2008-09-08 2013-11-06 群创光电股份有限公司 A sensing circuit used in a capacitance touching control panel

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