CN2594992Y - Image sensing chip with light penetrating layer - Google Patents
Image sensing chip with light penetrating layer Download PDFInfo
- Publication number
- CN2594992Y CN2594992Y CN 02288854 CN02288854U CN2594992Y CN 2594992 Y CN2594992 Y CN 2594992Y CN 02288854 CN02288854 CN 02288854 CN 02288854 U CN02288854 U CN 02288854U CN 2594992 Y CN2594992 Y CN 2594992Y
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- Prior art keywords
- image sensing
- sensing wafer
- photosensitive area
- wafer
- utility
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Abstract
The utility model relates to an image sensing chip with a light penetrating layer. The utility model provided for providing an image sensor part which can simplify production process, reduce production cost, effectively protect conducting wires, increase high rate of qualified products and pack larger wafers and has easy fabrication and favorable signal transmission effect comprises image sensing wafers having light sensing zones and a plurality of welding pads formed around the light sensing zones and adhesive layers arranged on the image sensing wafers and light penetrating layers as transparent glass stuck on the light sensing zones.
Description
Technical field
The utility model belongs to the image sensor parts, the euphotic image sensing wafer of particularly a kind of tool.
Background technology
General sensor can be used to sensor light signal or sound signal, also can be used to receive light signal or image signal.After receiving the light signal, can the light signal be transformed into electric signal by image sensor, and be passed on the circuit board through substrate.
As shown in Figure 1, the image sensor of commonly using comprise upper and lower surface form the substrate 10 of first tie point 18 and second tie point 24 respectively, be arranged on the substrate 10 and with substrate 10 form grooves 11 flange layer 12, form a plurality of weld pads 20 and be positioned over that substrate 10 and flange layer 12 form image sensing wafer 14 in the grooves 11, the plural wires 16 that is electrically connected image sensing wafer 14 weld pads 20 and substrate 10 first tie points 18 reaches so that viscose 23 is adhesive and is placed in the photic zone 22 to envelope image sensing wafer 14 on the flange layer 12.Photic zone 22 is to be coated with one deck viscose 23 earlier, sticks together to be placed on the flange layer 12 again, and image sensing wafer 14 is enveloped, and promptly finishes the encapsulation of OPTICAL SENSORS.
Known image sensor has following shortcoming:
When 1, encapsulating, flange layer 12 must be arranged on the substrate 10 in advance, in photic zone 22 coating one deck viscoses 23, then be attached on the flange layer 12, it is comparatively loaded down with trivial details on making.
2, when covering photic zone 22, because plural wires 16 is not protected firmly, therefore, extraneous impurity easily undermines plural wires 16, and has influence on the signal transmission effect of image sensing wafer 14, and whole production yield is reduced.
3, flange layer 12 need be set and cover for photic zone 22, promptly increase the space of flange layer 12 on substrate 10, so, under certain substrate 10 sizes, the size of packaged image sensing wafer 14 will be restricted.
Summary of the invention
The purpose of this utility model provide a kind of simplify procedure for producing, easily manufactured, reduce production costs, effectively guardwire, signal transmission effect good, improve product yield and encapsulation than the euphotic image sensing wafer of the tool of wafer.
The utility model comprises the image sensing wafer that is provided with photosensitive area and is formed at a plurality of weld pads of photosensitive area periphery, be located on the image sensing wafer that mucigel and mat mucigel are adhesive to be the photic zone of transparent glass on the image sensing wafer photosensitive area.
Wherein:
The viscose series of strata are located at image sensing wafer photosensitive area periphery.
Because the utility model comprises the image sensing wafer that is provided with photosensitive area and is formed at a plurality of weld pads of photosensitive area periphery, be located on the image sensing wafer that mucigel and mat mucigel are adhesive to be the photic zone of transparent glass on the image sensing wafer photosensitive area.During manufacturing, at first provide wafer and a plurality of appropriate size photic zone with a plurality of image sensing wafers; Be attached on the photosensitive area of image sensing wafer by mucigel with cutting the photic zone of finishing to transparent glass; At last, with cutter wafer is cut into single the euphotic image sensing wafer of tool; During encapsulation by the photic zone on the photosensitive area that is covered in image sensing wafer in advance, can avoid image sensor in the packaging and routing process, to pollute the photosensitive area of image sensing wafer, can improve the yield of product, make the encapsulation procedure of image sensor comparatively easy, and when in encapsulation, flange layer need not be set, the increasing image sensing wafer is arranged at the space on the substrate, and the size of image sensing wafer applicatory is bigger.Not only simplify procedure for producing, easily manufactured, reduce production costs, and effectively guardwire, signal transmission effect good, improve product yield and encapsulation than wafer, thereby reach the purpose of this utility model.
Description of drawings
Fig. 1, be the image sensor structure schematic sectional view of forming with known image sensing wafer.
Fig. 2, for making wafer vertical view of the present utility model.
Fig. 3, for making the utility model tool photic zone wafer vertical view.
Fig. 4, be the utility model structural representation cutaway view.
Embodiment
As shown in Figure 4, the utility model comprises the image sensing wafer 30 that is provided with photosensitive area 34 and is formed at a plurality of weld pads 36 of photosensitive area 34 peripheries, is located on the image sensing wafer 30 and is positioned at the mucigel 42 of its photosensitive area 34 peripheries and is the photic zone 40 of transparent glass.
Photic zone is attached on the photosensitive area 34 of image sensing wafer 30 by mucigel 42.
During manufacturing, as shown in Figure 2, be that the wafer 32 with a plurality of image sensing wafers 30 at first is provided, each image sensing wafer 30 is provided with a photosensitive area 34 and is formed with a plurality of weld pads 36 in photosensitive area 34 peripheries.
As shown in Figure 3, providing a plurality of appropriate sizes is the photic zone 40 of transparent glass.
As shown in Figure 3, Figure 4, be attached on the photosensitive area 34 of image sensing wafer 30 by mucigel 42 cutting the photic zone of finishing to transparent glass 40.
At last, with cutter wafer 32 is cut into single image sensing wafer 30.At this moment, as shown in Figure 4, each image sensing wafer 30 all has photic zone 40, receive the light signal so that image sensing wafer 30 can see through photic zone 40, and mucigel 42 is to coat around the photosensitive area 34.
The utility model and manufacture method thereof have following advantage:
1, is covered on the photosensitive area 34 of image sensing wafer 30 with photic zone 40 in advance, can avoids image sensor in the routing process of encapsulation, to pollute the photosensitive area 34 of image sensing wafer 30, can improve the yield of product.
2, photic zone 40 is fixed on each image sensing wafer 30 of wafer 32 in advance, again each image sensing wafer 30 is cut, can use, make the encapsulation procedure of image sensor comparatively easy for the image sensor encapsulation.
3, image sensing wafer 30 of the present utility model is because of having possessed photic zone 40 on it.Do not need as known flange layer to be set when in encapsulation, so image sensing wafer is arranged at the space increasing on the substrate, and therefore the size of image sensing wafer applicatory is bigger.
Claims (2)
1, the euphotic image sensing wafer of a kind of tool, it comprises the image sensing wafer that is provided with photosensitive area and is formed at a plurality of weld pads of photosensitive area periphery; It is characterized in that described image sensing wafer is provided with that mucigel and mat mucigel are adhesive to be the photic zone of transparent glass on the image sensing wafer photosensitive area.
2, the euphotic image sensing wafer of tool according to claim 1 is characterized in that described viscose series of strata are located at image sensing wafer photosensitive area periphery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02288854 CN2594992Y (en) | 2002-11-26 | 2002-11-26 | Image sensing chip with light penetrating layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02288854 CN2594992Y (en) | 2002-11-26 | 2002-11-26 | Image sensing chip with light penetrating layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2594992Y true CN2594992Y (en) | 2003-12-24 |
Family
ID=33748593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02288854 Expired - Lifetime CN2594992Y (en) | 2002-11-26 | 2002-11-26 | Image sensing chip with light penetrating layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2594992Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100413042C (en) * | 2005-08-25 | 2008-08-20 | 矽格股份有限公司 | Packaging method for optical sensing semiconductor assembly and its packaging structure |
-
2002
- 2002-11-26 CN CN 02288854 patent/CN2594992Y/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100413042C (en) * | 2005-08-25 | 2008-08-20 | 矽格股份有限公司 | Packaging method for optical sensing semiconductor assembly and its packaging structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20121126 Granted publication date: 20031224 |