CN2526981Y - High-efficient LED - Google Patents

High-efficient LED Download PDF

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Publication number
CN2526981Y
CN2526981Y CN02207287U CN02207287U CN2526981Y CN 2526981 Y CN2526981 Y CN 2526981Y CN 02207287 U CN02207287 U CN 02207287U CN 02207287 U CN02207287 U CN 02207287U CN 2526981 Y CN2526981 Y CN 2526981Y
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China
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emitting diode
light emitting
chip
high
high efficiency
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CN02207287U
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Chinese (zh)
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黄晞
葛世潮
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葛世潮
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Priority to CN02207287U priority Critical patent/CN2526981Y/en
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Publication of CN2526981Y publication Critical patent/CN2526981Y/en
Priority claimed from KR1020047010358A external-priority patent/KR100991830B1/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating

Abstract

The utility model relates to a high-efficient led with high power, which comprises at least one LED chip which is installed on a ground mass. The ground mass is equipped with a screw or a screw hole which is used for connecting with a heat radiation device. A reflective optical system and a figurable light transmission medium are equipped on the chip. The electric pole of the chip is led out through the ground mass and a leading-wire which is insulating from the ground mass respectively. Therefore, a light emitting diode with high power and high efficiency can be made which is used for illuminating, traffic lamps, automotive lamps and character display, etc. Compared with the prior art, the utility model has such characteristics as high efficiency, high horsepower and long lifetime, etc.

Description

高效率发光二极管 High efficiency light emitting diode

技术领域 FIELD

本发明涉及的是一种高效率大功率发光二极管,用于照明、交通灯、汽车灯和信息显示等。 The present invention relates to a high-efficiency power light emitting diodes for lighting, traffic lights, automotive lights and information displays.

背景技术 Background technique

目前,发光二极管已被广泛用于显示器、指示灯等。 Currently, light emitting diodes have been widely used in displays, indicators and the like. 图1为现有技术的发光二极管的结构示意图,它包括有发光二极管的芯片1,它被安装在一个金属引线2顶部的反射碗3内,发光二极管的另一引线4通过金属引线5与发光二极管芯片1相连,芯片1的周围有透光介质6,例如环氧树脂。 FIG 1 is a schematic view of prior art light-emitting diode which comprises a light emitting diode chip 1, which is mounted within the bowl from the top of a reflective metal lead 3 and the other lead wire 4 light emitting diode 5 through the metal wires and the light emitting diode chip 1 is connected, around the chip 1 has a light-transmitting medium 6, such as epoxy resin. 由发光二极管芯片1发出的光一部分7可直接或经由反射碗3从透光介质顶部出射,这部分为有用的光;但由发光二极管芯片1发出的另一部分光8将从发光二极管的側面逃脱,另有一部分9将在发光二极管内产生全反射而从发光二极管的側面逃脱。 1 emitted by the light emitting diode chip 7 may be a part of the light from the light-transmitting medium 3 directly or via a top emission reflective bowl, this into useful light; but emitted by another portion of the side surface of the light emitting diode chip light from the light emitting diode 8 escape , and another part 9 is totally reflected in the light emitting diode to escape from the side of the light emitting diode. 同时,由图1还可见,现有发光二极管芯片周围均为绝热的透光介质,而引出线2为一细的金属线,发光二极管芯片产生的热难于有效地散发掉,使芯片温度升高,发光效率下降,因而难于制成大功率发光二极管。 Meanwhile, also seen from Figure 1, the conventional light emitting diode chips are around the light-transmitting heat-insulating medium, while line 2 is a thin metal wire, the heat generated by the LED chip is difficult to be effectively dissipated, so that the chip temperature was raised , light emission efficiency is lowered, and thus difficult to be made of high-power light emitting diode. 总结以上现有技术所存在的不足有:一是发光二极管芯片所发的光不能被充分利用,部分从芯片发出的光会从发光二极管側墙和因发光二极管内部的光的全反射而损失掉;特别是在为了制造大功率高效率发光二极管而使用较大面积或多个发光二极管芯片时,这些损失就更为严重;二是芯片被安装在一个小的金属反射体上,此金属体和芯片周围都是透光介质,例如环氧树脂,所述透光介质是热的不良导体,而输入管芯的电功率约有80%将转变成热能,从而会使芯片温度升高,而现有发光二极管芯片的发光效率几乎随温度的上升而直线下降,因而难于制成大功率高效率发光二极管。 Summing up the above prior art has the shortcomings: First, the LED chip can not be made full use of light, the light will be emitted from the chip and the portion due to internal total reflection of light emitting diode light emitting diode is lost from the sidewall ; particularly when the power in order to manufacture high efficiency light emitting diode or a larger area using a plurality of light emitting diode chips, which is more serious losses; second chip is mounted on a small metal reflector, the metal body and are transparent medium around the chip, such as epoxy resin, the light transmissive medium is a poor conductor of heat, and the electric power input of about 80% of the die will be transformed into thermal energy, so that the chip temperature will increase, whereas the conventional emitting efficiency of the LED chip almost linearly with increasing temperature drops, and thus difficult to be made of high-power high-efficiency light emitting diode.

发明内容 SUMMARY

本实用新型的目的在于克服上述存在的不足,而提供一种可制成高效率的各种功率的发光二极管。 The present invention aims to overcome the above deficiencies exist, and provide a light emitting diode capable of high efficiency can be made of various power. 它包括至少一个发光二极管芯片,一个金属基体及透光介质,所述的发光二极管芯片被安装在高热导率金属基体的反射面上,所述的金属基体的反射面上有由塑料、环氧树脂或金属制成的反射器,该反射器的反射面为高反射率的银、铝或合金层,它可将由芯片发出、可能从发光二极管側面逃脱或因内全反射而损失掉的光反射回反射金属基体而被重新利用;金属基体与一散热装置连结,它可有效地将芯片产生的热散发掉,从而使芯片工作于高效率的较低温度的状态,从而可制成大功率高效率发光二极管;所述发光二极管芯片的电极经引线或和金属基体引出,引线与金属基体间有绝缘层,所述的金属基体上有一螺丝或螺丝孔,用于和散热装置连结,金属基体由铜、银或合金等高热导率材料制成,其反射面为高反射率的银、铝或合金层,金属基体与散热 It comprises at least one light emitting diode chip, a metal substrate and a transparent medium, the light emitting diode chip is mounted on the reflective surface of the high thermal conductivity of the metal substrate, the reflective surface of the metal substrate of a plastic, epoxy a reflector made of resin or metal, the reflecting surface of the reflector is silver, aluminum, or an alloy layer having a high reflectance, it can be sent by the chip, reflected light may escape from the side surface of the light emitting diode due to total internal reflection or lost from the back reflective metal substrate is reused; metallic substrate with a heat sink coupled, it can effectively dissipate the heat generated by the chip, the chip operates in a state such that the lower temperature of the high efficiency, high power can be made so that efficiency of the LED; electrode via a lead of the LED chip or the metal base lead, an insulating layer between the leads and the metal base body, a screw or screw hole on the metal matrix, for, and a heat sink connected to the metal substrate by the made of high thermal conductivity material like copper, silver or an alloy, which reflective surface is silver, aluminum, or an alloy layer having a high reflectance, and the heat dissipating metal base 置间有导热绝缘层。 Interposition of thermally conductive insulating layer.

所述的金属基体的发射面上有由塑料、环氧树脂或金属制成的反射器,该反射器的反射面为高反射率的银、铝或合金层。 A reflector made of a plastic, epoxy or metal-emitting surface of the metal substrate, the reflecting surface of the reflector is silver, aluminum, or an alloy layer having a high reflectance.

所述的至少一个芯片可为相同发光色或不同色的,它们可按需要并联、串联或串并联。 Said at least one chip, and they may need to parallel the same emission color or of different colors, in series or in series-parallel.

所述的至少一个发光二极管芯片上可有光转换材料,它可吸收发光二极管芯片发出的光,例如蓝光或紫外光,而发出其它所需色的光、从而可制成白光或其它所需色光的发光二极管。 Said at least one light emitting diode chip may be a light conversion material, which can absorb light emitted from the light emitting diode chip, such as blue or ultraviolet light, emits light of a desired color to the other, which can be made white or other desired color light a light emitting diode.

所述的绝缘层可为一电路板环,由陶瓷或环氧电路板等制成,其上表面有导电层用于连接引线和引出线以及用于多个芯片之间的连接。 The insulating layer of the circuit board may be a ring, made of a ceramic or epoxy circuit board or the like, the surface on which a conductive layer for connecting the lead and the lead wire for connecting between a plurality of chips.

本实用新型的发光二极管的高效散射装置和光反射装装置,使发光二极管芯片工作于高效率的较低温度下,芯片所发的光可充分得到利用。 Efficient scattering means and the light reflecting means according to the present invention means a light emitting diode, light emitting diode chip to operate at high efficiency at lower temperatures, the emitted light chip can be sufficiently utilized. 它与现有技术的发光二极管相比,具有效率高、功率大、寿命长等优点。 Compared with prior art light emitting diode having high efficiency, high power, and long lifetime.

附图说明 BRIEF DESCRIPTION

图1为现有技术的发光二极管的光损失的原理示意图。 Figure 1 is a light emitting diode light loss simplified schematic of the prior art.

图2为本实用新型的高效率大功率发光二极管的实施例结构示意图图3为本实用新型的高效率发光二极管的又一实施例结构示意图具体实施方式下面将结合附图对本实用新型作详细介绍。 Example 2 a schematic structural diagram of the present invention high-efficiency power LED of FIG. 3 is another new high-efficiency light emitting diode according to structural schematic diagram of a practical embodiment DETAILED DESCRIPTION The following detailed description in conjunction with the accompanying drawings of the present invention as . 图2为本实用新型的高效率大功率发光二极管的实施例的原理结构示意图,它包括有至少一个发光二极管芯片10,它被固定在高热导率金属、例如铜、银等的金属基体11上的反射面或反射碗12上。 Simplified schematic structural embodiment of the new high-efficiency high-power light emitting diode of the present practical embodiment of FIG. 2, which comprises at least one light emitting diode chip 10, which is fixed to the high thermal conductivity metal such as copper or silver, a metal substrate 11 12. the reflector or reflection surface. 所述金属基体11还有螺丝13或螺丝孔(图中未示出),用于将它和散热装置14相连接。 The metal substrate as well as a screw 13 or screw holes (not shown) for connecting it to 14 and heat sink 11. 所述金属基体11可直接与散射装置14紧密接触,也可在二者之间有热导绝缘层15。 The metal substrate 11 may be directly brought into close contact with the scattering means 14, it may also have a thermal conductivity in the insulating layer 15 therebetween. 若发光二极管芯片10的正负电极分别在芯片的顶面和底面,则底面电极可用银浆等导电胶16与金属基体11相连,其顶面电极则经引线17和与金属基体11通过与绝缘层19绝缘的引线18引出,用于连接外电源。 If the top and bottom surfaces of the chip, is connected to the positive and negative electrode of the LED chip 10 are bottom electrode available silver paste and conductive adhesive 16 and the metal substrate 11, the top surface of the electrode is via lead 17 and the metal substrate 11 through the insulating an insulating layer 18 of the lead 19 lead for connecting an external power supply. 引线18也可从发光二极管的側面引出。 Lead 18 may also be drawn from the side of the light emitting diode. 若芯片10的正负电极都在顶面,则其中一个电极可经引线20与金属基体11相连,也可经另一个与18相似的引线引出。 If the positive and negative electrodes of the chip 10 are on the top surface, wherein the one electrode lead 20 may be connected to the metal substrate 11, it may be similar to the lead 18 and via another lead. 当芯片有多个时,所述引线18可按需要有多个;这时芯片10与基体11之间的胶16也可用不导电的胶。 When a plurality of chips, said plurality of leads 18 may need; plastic case 16 between the chip 11 and the base 10 may also be non-conductive adhesive.

所述的绝缘层19可为一电路板环,由陶瓷或环氧电路板等制成,其上表面有导电层26,用于连接引线17和引出线18以及用于多个芯片之间的连接。 Insulating layer 19 may be a circuit board ring, made of a ceramic or epoxy circuit board or the like, on the surface of the conductive layer 26, for between 17 and 18 and a plurality of lead wires connected to the chip connection.

所述芯片10的上方有一光反射装置21,它由导体或非导体制成,例如塑料、环氧树脂或金属等。 Above the chip 10 has a light reflecting means 21, which is made of a conductor or a conductor, such as plastic and the like, an epoxy resin or a metal. 其面向芯片10的一面为高反射率层22,例如银或铝层等。 Its side facing the chip 22 is a high reflectance layer 10 is, for example, silver or aluminum layer. 此反射面22可将可能由发光二极管側面或经内全反射逃脱的光23反射回反射碗12而重新被利用,从而提高光的利用率。 This reflector 22 may be a light emitting diode may be provided by the inner side or escape through the total reflection light 23 reflected back again The reflector 12 is utilized, thereby improving the light use efficiency.

所述芯片10的周围为透光介质24,例如环氧树脂或光学胶等,它为透明、着色或漫射的,其顶面可按输出光结构的要求设计成平面、球面、椭球面或其它非球面。 Periphery of the chip 10 is a light-transmitting medium 24, an optical adhesive such as an epoxy or the like, it is a transparent, colored or diffuse, the top surface configuration of the light output requirements can be designed to be flat, spherical, ellipsoid, or other non-spherical.

图2所示的结构可得到高效率、大功率的不同光输出角的发光二极管,选取不同的发光二极管的形状和尺寸,可得到所需的不同的光输出角。 Structure shown in FIG 2 can be obtained with high efficiency, light-emitting diodes of different optical power of the output angle, the light emitting diode select different shape and size desired to obtain different light output angle.

所述至少一个发光二极管芯片10可以是相同发光色或不同发光色的,它们可按需要并联、串联或串并联。 The at least one light emitting diode chip 10 may be the same or different luminescent color of luminescent colors, they may need to parallel, series or series-parallel.

所述至少一个发光二极管芯片10上还可有光转换材料25,它可吸收芯片10所发的光,例如蓝光或紫外线,发出所需色的光,从而可制成白光或其它所需色光的发光二极管。 The at least one light-converting material 25 may be 10, it can absorb the light emitting diode chip 10 chip made light, such as blue or ultraviolet light and emits light of a desired color, which can be made white or other desired color light led.

图3所示为本实用新型的另一实施例的原理结构示意图。 FIG 3 is a schematic structural principle of another embodiment of the invention shown in FIG. 图3中有光反射器21,这时芯片10所发的光27可直接或经由反射碗12和或经反射器21反射由透光介质6输出。 Figure 3 a light reflector 21, then the issued chip 10 directly or via the light 27 may be reflected by the reflective bowl 21 or 12 and is reflected by the light-transmitting medium 6 outputs. 图3中的其它数字的意义与图1中相同。 The same meaning as in FIG. 1 FIG. 3 in the other figures.

Claims (6)

1.一种高效率发光二极管,它包括至少一个发光二极管芯片,一个金属基体及透光介质,其特征在于所述的发光二极管芯片(10)被安装在高热导率金属基体(11)的反射面(12)上,金属基体(11)与一散热装置(14)连结;所述发光二极管芯片(10)的电极分别经金属基体(11)和引线(17、18)引出,引线(18)与金属基体(11)间有绝缘层(19), A high efficiency light emitting diode, comprising at least one light emitting diode chip, a metal matrix and a transparent medium, wherein said light emitting diode chip (10) is mounted on a high thermal conductivity of the reflective metal substrate (11) surface (12), a metal substrate (11) with a heat dissipating device (14) connected to; electrode of the light emitting diode chip (10) respectively via a metal base (11) and the lead (17, 18) lead, the lead (18) the metal substrate with an insulating layer (19) between (11),
2.如权利要求1所述的高效率发光二极管,其特征在于所述的金属基体(11)上有一螺丝(13)或螺丝孔,用于和散热装置(14)连结,金属基体(11)由铜、银或合金等高热导率材料制成,其反射面(12)为高反射率的银、铝或合金层,金属基体(11)与散热装置(14)间有导热绝缘层(15) 2. The high efficiency of the light emitting diode of claim 1, characterized in that a screw (13) or screw holes, and a heat sink (14) connected to said metal base (11), a metal matrix (11) made of high thermal conductivity material like copper, silver or an alloy, which reflective surface (12) of high reflectance of silver, aluminum, or an alloy layer, a metal substrate (11) and the heat sink (14) with a thermal insulation layer (15 )
3.如权利要求1所述的高效率发光二极管,其特征在于所述的金属基体的发射面(12)上有由塑料、环氧树脂或金属制成的反射器(21),该反射器(21)的反射面(22)为高反射率的银、铝或合金层。 3. The high efficiency light emitting diode as claimed in claim 1 of the reflector, characterized in that a reflector (21) made of plastic, epoxy or metal on the emitter surface (12) of the metal substrate, (22) silver, aluminum, or an alloy layer (21) of the reflecting surface of high reflectance.
4.如权利要求1所述的高效率发光二极管,其特征在于所述的至少一个芯片(10)可为相同发光色或不同色的,它们可按需要并联、串联或串并联。 4. The high efficiency of the light emitting diode of claim 1, wherein the at least one chip (10) may be, and they may need to parallel the same emission color or of different colors, in series or in series-parallel.
5.如权利要求1或4所述的高效率发光二极管,其特征在于所述的至少一个发光二极管芯片(10)上可有光转换材料(25)。 4 or 5. The high efficiency of the light emitting diode of claim 1, wherein said at least one light emitting diode chip (10) is a light conversion material (25).
6.如权利要求1所述的高效率发光二极管,其特征在于所述的绝缘层(19)可为一电路板环,由陶瓷或环氧电路板等制成,其上表面有导电层(26)用于连接引线(17)和引出线(18)以及用于多个芯片之间的连接。 6. The high efficiency of the light emitting diode of claim 1, wherein said insulating layer (19) is a ring circuit board, made of a ceramic or epoxy circuit board or the like, the surface on which a conductive layer ( 26) for connecting leads (17) and the lead (18) and a plurality of connections between the chips.
CN02207287U 2002-03-09 2002-03-09 High-efficient LED CN2526981Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN02207287U CN2526981Y (en) 2002-03-09 2002-03-09 High-efficient LED

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
CN02207287U CN2526981Y (en) 2002-03-09 2002-03-09 High-efficient LED
KR1020047010358A KR100991830B1 (en) 2001-12-29 2002-12-30 A LED and LED lamp
JP2003557050A JP2005513815A (en) 2001-12-29 2002-12-30 Light emitting diode and light emitting diode lamp
US10/500,315 US7497596B2 (en) 2001-12-29 2002-12-30 LED and LED lamp
CNB028261275A CN100373638C (en) 2001-12-29 2002-12-30 LED and LED lamp thereof
KR1020097019924A KR100991829B1 (en) 2001-12-29 2002-12-30 A LED and LED lamp
PCT/CN2002/000930 WO2003056636A1 (en) 2001-12-29 2002-12-30 A led and led lamp
KR1020097019923A KR100991827B1 (en) 2001-12-29 2002-12-30 A LED and LED lamp
EP02790249A EP1467414A4 (en) 2001-12-29 2002-12-30 A led and led lamp
AU2002367196A AU2002367196A1 (en) 2001-12-29 2002-12-30 A led and led lamp
KR1020097019925A KR20090115810A (en) 2001-12-29 2002-12-30 A LED and LED lamp
US11/430,914 US7347589B2 (en) 2001-12-29 2006-05-10 LED and LED lamp
US12/265,911 US7736027B2 (en) 2001-12-29 2008-11-06 LED and LED lamp
JP2009241098A JP2010050472A (en) 2001-12-29 2009-10-20 Light emitting diode lamp, and light emitting diode traffic light
JP2009241101A JP2010050473A (en) 2001-12-29 2009-10-20 Light emitting diode plane light source

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097576A (en) * 2010-12-30 2011-06-15 江苏欣力光电有限公司 Light emitting diode (LED) copper bracket

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097576A (en) * 2010-12-30 2011-06-15 江苏欣力光电有限公司 Light emitting diode (LED) copper bracket

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