CN222803221U - Current transformer power module structure and current transformer - Google Patents

Current transformer power module structure and current transformer Download PDF

Info

Publication number
CN222803221U
CN222803221U CN202421609060.9U CN202421609060U CN222803221U CN 222803221 U CN222803221 U CN 222803221U CN 202421609060 U CN202421609060 U CN 202421609060U CN 222803221 U CN222803221 U CN 222803221U
Authority
CN
China
Prior art keywords
busbar
capacitor
power
module
power module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202421609060.9U
Other languages
Chinese (zh)
Inventor
李庆忠
葛程
刘富永
刘宇航
贺凯
刘坚
朱卫东
杜刚强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongfang Electronics Co Ltd
Original Assignee
Dongfang Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongfang Electronics Co Ltd filed Critical Dongfang Electronics Co Ltd
Priority to CN202421609060.9U priority Critical patent/CN222803221U/en
Application granted granted Critical
Publication of CN222803221U publication Critical patent/CN222803221U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Power Conversion In General (AREA)

Abstract

The utility model relates to the technical field of converters, in particular to a power module structure of a converter and the converter. The power module structure of the converter comprises a capacitor assembly and a power assembly, wherein the capacitor assembly comprises a thin film capacitor, a capacitor support and a capacitor laminated busbar, the thin film capacitor is arranged on the capacitor support and connected with the capacitor laminated busbar, the power assembly comprises a liquid cooling plate, an IGBT module, a power module laminated busbar and a module switching busbar, the IGBT module is arranged on the liquid cooling plate and connected with the power module laminated busbar and the module switching busbar, and the power module laminated busbar is connected with the capacitor laminated busbar. The capacitor assembly and the power assembly are integrated, so that a current-converting loop of the power assembly is shortened, the turn-off overvoltage of a power device is reduced, the structure is more compact while the cost is reduced, the power density is further improved, the safe working area of the converter is enlarged, and the long-term safe and stable operation of the converter is facilitated.

Description

Current transformer power module structure and current transformer
Technical Field
The utility model relates to the technical field of converters, in particular to a power module structure of a converter and the converter.
Background
The converter is widely applied to the fields of power systems, wind power generation, solar photovoltaics and the like, realizes energy bidirectional flow in the occasions of peak clipping and valley filling of a power grid, energy recycling and the like, actively supports the voltage frequency of the power grid and improves the quality of electric energy. As the requirements of the converter on volume and efficiency are increased, the electric structure of the converter gradually applies a three-level topological structure with higher efficiency, and the switching frequency is also increased. The high switching frequency and the use of multiple power devices bring the problems of high switching loss, high voltage stress and the like, so that the converter has more severe requirements on stray inductance parameters of an electric loop of the power device module, and the stray inductance parameters of a main loop of the power module are optimized as much as possible in order to eliminate the problems of switching loss and turn-off overvoltage caused by stray inductance.
At present, the existing laminated busbar power device is unreasonable in layout, the thicknesses of positive, negative and neutral copper foils in the busbar are too thick, the laminating area is smaller, the suppression effect on stray inductance is not ideal due to the factors such as the too high height of a crimping terminal of the power device, the installation process is complex, mass production is not facilitated, and the power device is stressed due to the gravity effects of manufacturing and assembly errors, the busbar and capacitance and the like.
Disclosure of utility model
Aiming at the defects of the prior art, the utility model provides a power module structure of a current transformer, solves the problems of unreasonable layout, unsatisfactory stray inductance suppression effect and complex installation process of the existing laminated busbar device, and provides the power module structure of the current transformer and the current transformer.
The technical scheme for solving the technical problems is as follows:
The utility model provides a power module structure of a converter, which comprises a capacitor assembly and a power assembly, wherein the capacitor assembly comprises a thin film capacitor, a capacitor support and a capacitor laminated busbar, the thin film capacitor is arranged on the capacitor support and is connected with the capacitor laminated busbar, the power assembly comprises a liquid cooling plate, an IGBT module, a power module laminated busbar and a module switching busbar, the IGBT module is arranged on the liquid cooling plate, the IGBT module is connected with the power module laminated busbar and the module switching busbar, and the power module laminated busbar is connected with the capacitor laminated busbar.
Compared with the prior art, the utility model has the following technical effects:
The power module structure of the converter is divided into the capacitor component and the power component, so that the function distinction of the power module of the converter is obvious, and the installation and the maintenance are convenient. The thin film capacitors are arranged on the capacitor support and connected with the capacitor lamination busbar, so that the flexible configuration of the number of thin film capacitor devices of the power units with different powers can be realized by replacing the capacitor support, and the flexible configuration of the thin film capacitors in the power units with different power requirements is enhanced. In the power assembly, the IGBT module is arranged on the liquid cooling plate, and the heat generated by the IGBT module in the working state is high, so that a device of the IGBT module is contacted with the liquid cooling plate through the adhesion of the IGBT module and the liquid cooling plate, and the heat dissipation of the device is quickened. Furthermore, the IGBT modules are arranged on two sides of the liquid cooling plate, on one hand, the space layout of the power module can be optimized, the structures and the components are more compact, the overall volume of the power module is reduced, the power density of unit volume is improved, and on the other hand, the heat exchange capacity of the liquid cooling plate can be fully utilized, the structures or the components of the power assembly are ensured to work at proper temperature, and the service life is prolonged.
Due to the improvement of the integration level of the capacitor component and the power component, the current-converting loop of the power component is shortened, the turn-off overvoltage of the IGBT is greatly reduced, a du/dt absorption circuit is omitted, the structure is more compact while the cost is reduced, the power density is further improved, the safe working area of the converter is enlarged, and the long-term safe and stable operation of the converter is facilitated.
On the basis of the technical scheme, the technical scheme can be improved as follows:
Further, the thin film capacitor comprises two groups of thin film capacitors which are connected in parallel.
The technical scheme has the advantages that the thin film capacitors are arranged, so that direct-current voltage can be stabilized, voltage fluctuation at the direct-current side is reduced, and when the two groups of thin film capacitors are connected in parallel, capacitance values can be added, thereby improving the overall capacitance value of the circuit, being beneficial to filtering out ripple waves and noise in the direct-current voltage and improving the stability of the circuit. The number of the film capacitors can be determined according to actual requirements, for example, a 710kW power converter uses 16 film capacitors, and a 630kW power converter uses 14 film capacitors. And when the capacitor is installed, the film capacitor and the insulating paper at the bottom of the capacitor are installed on the capacitor bracket and are pre-tensioned through the positioning cover.
Further, the capacitor laminated busbar adopts a three-layer busbar structure, namely a capacitor positive busbar, a capacitor N busbar and a capacitor negative busbar, and four insulating layers are added in the middle and the outside of the three-layer busbar structure.
The capacitor laminated busbar has the beneficial effects that the capacitor laminated busbar adopts insulation and lamination arrangement, and comprises a positive capacitor busbar, an N busbar (zero capacitor busbar) and a negative capacitor busbar, wherein the capacitor laminated busbar is laminated and distributed in parallel, and has few overlapped wiring and loops, thereby being beneficial to reducing line distribution inductance and improving the current carrying capacity of the capacitor laminated busbar.
Further, the thickness of the positive electrode busbar of the capacitor is 1mm, the thickness of the N busbar of the capacitor is 1.5mm, the thickness of the negative electrode busbar of the capacitor is 1mm, and the thickness of the insulating layer is 0.5mm.
Further, the IGBT module comprises a gate plate and IGBT elements, the IGBT elements are arranged on the liquid cooling plate through the gate plate, and the IGBT elements are respectively and electrically connected with the gate plate and the module switching busbar and are integrated.
The technical scheme has the advantages that the IGBT module is high in integration level, so that the current-converting circuit of the power assembly is shortened, stray inductance can be effectively reduced due to optimization of positive and negative paths of the laminated busbar, turn-off overvoltage of the power device is greatly reduced, and a du/dt absorption circuit is omitted.
Further, the module switching busbar is divided into a two-layer busbar structure, namely a P busbar and a Q busbar, and three insulating layers are added between and outside the two-layer busbar structure.
The technical scheme has the beneficial effects that an insulating layer is arranged between the P busbar and the Q busbar to ensure the electrical isolation between the two layers of busbars, and an insulating layer is respectively added outside the two layers of busbars to provide additional electrical isolation and environmental protection.
Further, the thickness of the P busbar is 1mm, the thickness of the Q busbar is 1mm, and the thickness of the insulating layer is 0.5mm.
Further, the power module laminated busbar is divided into a three-layer busbar structure, namely a power positive electrode busbar, a power N electrode busbar and a power negative electrode busbar, and four insulating layers are added in the middle and the outside of the three-layer busbar structure.
The technical scheme has the beneficial effect that an insulating layer is arranged between each layer of the three-layer busbar structure so as to ensure electrical isolation. In addition, an additional insulating layer may be added to the exterior of the overall structure to provide additional protection and security.
Further, the thickness of the power positive electrode busbar is 1mm, the thickness of the power N busbar is 1.5mm, the thickness of the power negative electrode busbar is 1mm, and the thickness of the insulating layer is 0.5mm.
In a second aspect, the present utility model provides a current transformer comprising the power module structure of the current transformer of the first aspect.
Drawings
FIG. 1 is a schematic diagram of the overall structure of the present utility model;
FIG. 2 is a schematic diagram of the whole structure of the present utility model;
FIG. 3 is an isometric schematic of the overall structure of the present utility model;
FIG. 4 is a schematic diagram of a capacitive support structure according to the present utility model;
fig. 5 is a schematic diagram of a stacked busbar configuration of a capacitor according to the present utility model.
In the drawings, the list of component names indicated by the respective reference numerals is as follows:
1. The device comprises a first capacitor support, a second capacitor support, an IGBT module, a capacitor laminated busbar, a power module laminated busbar, a module switching busbar, a liquid cooling plate and a first thin film capacitor, wherein the first capacitor support, the second capacitor support, the IGBT module, the capacitor laminated busbar, the power module laminated busbar, the module switching busbar, the liquid cooling plate and the first thin film capacitor.
Detailed Description
The principles and features of the present utility model are described below with reference to the drawings, the examples are illustrated for the purpose of illustrating the utility model and are not to be construed as limiting the scope of the utility model.
Referring to fig. 1-5, a power module structure of a converter comprises a capacitor assembly and a power assembly, wherein the capacitor assembly comprises a thin film capacitor, a capacitor support and a capacitor laminated busbar 4, the thin film capacitor is arranged on the capacitor support and is connected with the capacitor laminated busbar 4, the power assembly comprises a liquid cooling plate 7, an IGBT module 3, a power module laminated busbar 5 and a module switching busbar 6, and the IGBT module 3 is arranged on the liquid cooling plate 7. Specifically, the IGBT modules 3 are disposed on two sides of the liquid cooling plate 7, the IGBT modules 3 are respectively connected to the power module laminated busbar 5 and the module switching busbar 6, and the power module laminated busbar 5 is connected to the capacitor laminated busbar 4.
The power module structure of the converter is divided into the capacitor component and the power component, so that the function distinction of the power module of the converter is obvious, and the installation and the maintenance are convenient. The thin film capacitors are arranged on the capacitor bracket and connected with the capacitor laminated busbar 4, so that the flexible configuration of the number of thin film capacitor devices of power units with different powers can be realized by replacing the capacitor bracket, and the flexible configuration of the thin film capacitors in the power units with different power requirements is enhanced. The IGBT module 3 is installed in the power module in the liquid cooling plate 7 both sides, because IGBT module 3 produces the heat height when operating condition, through the laminating with liquid cooling plate 7 for the device and the liquid cooling plate 7 contact of IGBT module 3, accelerate the heat dissipation of device, simultaneously, install IGBT module 3 on two surfaces of liquid cooling plate 7, make full use of the heat dissipation effect of liquid cooling plate 7, practiced thrift the space.
The power components (such as the IGBT module 3) are integrated, which means that more functional units can be integrated in the same or smaller volume, so that the use weight of bus bar materials of the laminated bus bar is effectively reduced, the total weight of all laminated bus bars of the equipment is not more than 30kg, and meanwhile, the connection between the power components is more compact due to the improvement of the integration level of the power components, thereby shortening the length of a current conversion loop. The laminated busbar is an important part for connecting the power components, and the optimization of the path of the laminated busbar can remarkably reduce stray inductance and improve the stability and efficiency of the system. The reduction of the stray inductance means that the induced voltage generated by the inductance will also be correspondingly reduced when the power device is turned off, which helps to protect the power device from excessive voltages and to extend its lifetime. Due to the improvement of the integration level and the shortening of the current conversion loop, the structure is more compact while the cost is reduced, the power density is further improved, and the occupied area of a user is reduced.
In this embodiment, two sets of thin film capacitors, namely, the first thin film capacitor 8 and the second thin film capacitor, may be included, and the two sets of thin film capacitors are connected in parallel. The thin film capacitors are arranged, so that direct current voltage can be stabilized, voltage fluctuation at the direct current side is reduced, and when the two groups of thin film capacitors are connected in parallel, capacitance values can be added, and therefore the overall capacitance value of the circuit is improved, ripple waves and noise in the direct current voltage can be filtered, and the stability of the circuit is improved. The number of the film capacitors can be determined according to actual requirements, for example, a 710kW power converter uses 16 film capacitors, and a 630kW power converter uses 14 film capacitors. Referring to fig. 4, the thin film capacitors are mounted on the capacitor support in two sets of longitudinal arrangements. During installation, the thin film capacitor and the bottom of the capacitor are installed on the capacitor bracket and are pre-tightened through the positioning cover. Specifically, referring to fig. 3, a first thin film capacitor 8 is mounted on the first capacitor holder 1, and a second thin film capacitor is mounted on the second capacitor holder 2.
In this embodiment, the capacitor laminated busbar 4 is arranged in an insulating and laminating manner, the capacitor laminated busbar 4 includes a positive capacitor busbar, a negative capacitor busbar (zero capacitor busbar) and a positive capacitor busbar, the negative capacitor busbar (zero capacitor busbar) and the negative capacitor busbar pass through the insulating layer, the capacitor laminated busbar 4 is laminated and distributed in parallel, wires are stacked, loops are less, line distribution inductance is reduced, and current carrying capacity of the capacitor laminated busbar 4 is improved. In fig. 2, the connection points of the capacitor laminated busbar 4 are respectively marked with "+n" and "N-" which represent the polarities of the thin film capacitors connected with the connection points. The thin film capacitor itself is not divided into "+" - "poles and can be mounted upside down.
The capacitor laminated busbar 4 three-layer busbar structure and four insulating layers, wherein the thickness of the insulating layers is 0.5mm, and the insulating layers are used for isolating contact problems of each busbar, the thickness of the positive busbar of the capacitor is 1mm, the thickness of the negative busbar of the capacitor N (zero busbar of the capacitor) is 1.5mm, and the thickness of the negative busbar of the capacitor is 1mm.
The three-layer busbar structure is provided with 8 wiring terminals, namely an anode busbar wire terminal, a cathode busbar wire terminal, a 2-position anode busbar voltage sampling terminal, a 2-position cathode busbar sampling terminal and a 2-position N busbar sampling terminal. Referring to fig. 5, positive hole sites, N-level hole sites and negative hole sites are respectively arranged between the conductive hole group arrangements of the capacitor laminated busbar 4 and are sequentially arranged, so that current can flow according to a preset path, direct contact between different potentials is avoided, and the safety of the system is ensured.
In one embodiment, the capacitor positive busbar is provided with a positive busbar line terminal, a positive busbar voltage sampling terminal at the position 2 and a positive hole site. The positive busbar lead-in terminal is used for being connected with a positive electrode of a power supply, the positive busbar voltage sampling terminal is close to the positive busbar lead-in terminal and used for monitoring voltage on the positive busbar, and the positive hole site is used for internal connection of the positive busbar. The capacitor negative busbar is provided with 2N busbar sampling terminals and N-level hole sites, wherein the N busbar sampling terminals are used for collecting voltage or current on a neutral point busbar (capacitor N busbar), and the N-level hole sites are used for internal connection of the N busbar. The negative busbar of the capacitor is provided with a negative busbar lead-in terminal, a negative busbar voltage sampling terminal at the 2 position and a negative hole site. The negative busbar lead-in terminal is opposite to the positive busbar lead-in terminal and used for being connected with a negative electrode of a power supply, the negative busbar sampling terminal is usually close to the negative busbar lead-in terminal and used for monitoring voltage or current on the negative busbar, and the negative hole site is used for internal connection of the negative busbar.
In an embodiment, the IGBT module 3 includes a gate plate and an IGBT element, the IGBT element is disposed on the liquid cooling plate 7 by the gate plate, the IGBT element is electrically connected to the gate plate and the module switching busbar 6, the electrical connection between the gate plate and the IGBT element can be established by fasteners (such as bolts and screws), and the electrical connection between the module switching busbar 6 and the IGBT element can be established by the fasteners. It is worth to say that the gate plate is also called an IGBT drive plate, is a power semiconductor device, and is widely used in various power devices such as a frequency converter and an inverter, and is used for controlling high-voltage and high-current switches.
In this embodiment, the IGBT modules 3 are disposed in mirror images on both sides of the liquid cooling plate 7. The number of IGBT modules 3 is 12, and 6 liquid cooling plates 7 are provided on each side, so that a structure of 2 rows and 3 columns is formed. The liquid cooling plate 7 is mainly used for cooling the IGBT module and cooling other surrounding components, the IGBT module 3 is arranged at two sides of the liquid cooling plate 7 in a mirror image mode, on one hand, the utilization rate of the liquid cooling plate 7 is improved, the weight of the IGBT module 3 is reduced, and on the other hand, the power density is increased in the same area, and the manufacturing cost of the IGBT module is reduced.
In an embodiment, a side of the IGBT module 3 near the liquid cooling plate 7 has a heat dissipation substrate, and the heat dissipation substrate is connected to the liquid cooling plate 7. The heat emitted by the IGBT module 3 exchanges heat with the liquid cooling plate 7 through the heat-radiating substrate at the bottom. Alternatively, the heat dissipation substrate of the IGBT module 3 is in contact with the liquid cooling plate 7 using a heat conductive material.
In this embodiment, the IGBT module 3 is electrically connected to the module switching busbar 6 to achieve efficient transmission and distribution of electric energy, where the module switching busbar 6 is divided into two-layer busbar structures, respectively, a P busbar and a Q busbar, the P busbar is a conductive busbar for connecting a power supply positive electrode and the IGBT module, the Q busbar is mainly used for connecting a neutral point (or a middle potential point) with the IGBT module 3, the thickness of the P busbar structure is 1mm, the thickness of the Q busbar structure is 1mm, three layers of insulating layers are added externally, and the thickness of the insulating layers is 0.5mm, so as to isolate contact problems of each busbar. The module switching busbar 2 is connected with the direct current side of the IGBT in parallel, and the 3 IGBT modules 3 are electrically connected to form a complete three-level structure.
In this embodiment, the power module laminated busbar 5 is divided into a three-layer busbar structure, which is a power positive busbar, a power N busbar and a power negative busbar, the thickness of the power positive busbar is 1mm, the thickness of the power N busbar is 1.5mm, the thickness of the power negative busbar is 1mm, four insulating layers are added in the middle and outside of the three-layer busbar structure, and the thickness of the insulating layers is 0.5mm, so as to isolate contact problems of each busbar.
Specifically, the power module laminated busbar 5 is provided with a plurality of positive electrode installation hole sites, N-level installation hole sites and negative electrode installation hole sites for installing the IGBT module 3, the positive electrode installation hole sites and the negative electrode installation hole sites respectively form a pair with the N-level installation hole sites, and the positive electrode installation hole sites and the negative electrode installation hole sites are placed in a transverse array and correspond to three-phase current input.
In another embodiment of the present utility model, a converter is provided, including a converter power module structure as described above. The current transformer provided by the embodiment ensures that the frequency transformer is more stable during working.
The foregoing description is only a preferred embodiment of the present utility model, and the present utility model is not limited thereto, but it is to be understood that modifications and equivalents of some of the technical features described in the foregoing embodiments may be made by those skilled in the art, although the present utility model has been described in detail with reference to the foregoing embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model should be included in the protection scope of the present utility model.

Claims (10)

1.一种变流器功率模块结构,其特征在于,包括电容组件和功率组件;所述电容组件包括薄膜电容、电容支架和电容层叠母排,其中,所述薄膜电容安装于所述电容支架上,且所述薄膜电容与所述电容层叠母排连接;所述功率组件包括液冷板、IGBT模块、功率模块层叠母排及模块转接母排,所述IGBT模块设置于所述液冷板两侧;所述IGBT模块连接功率模块层叠母排、模块转接母排,所述功率模块层叠母排与所述电容层叠母排连接。1. A converter power module structure, characterized in that it includes a capacitor component and a power component; the capacitor component includes a film capacitor, a capacitor bracket and a capacitor stacked busbar, wherein the film capacitor is installed on the capacitor bracket, and the film capacitor is connected to the capacitor stacked busbar; the power component includes a liquid cooling plate, an IGBT module, a power module stacked busbar and a module transfer busbar, and the IGBT module is arranged on both sides of the liquid cooling plate; the IGBT module is connected to the power module stacked busbar and the module transfer busbar, and the power module stacked busbar is connected to the capacitor stacked busbar. 2.根据权利要求1所述的一种变流器功率模块结构,其特征在于,包括两组薄膜电容,所述两组薄膜电容并联。2. A converter power module structure according to claim 1, characterized in that it comprises two groups of film capacitors, and the two groups of film capacitors are connected in parallel. 3.根据权利要求1所述的一种变流器功率模块结构,其特征在于,所述电容层叠母排采用三层母排结构,分别为电容正极母排、电容N母排及电容负极母排,所述三层母排结构中间和外部共增加四层绝缘层。3. A converter power module structure according to claim 1, characterized in that the capacitor stacked busbar adopts a three-layer busbar structure, which includes a capacitor positive busbar, a capacitor N busbar and a capacitor negative busbar, and a total of four insulating layers are added in the middle and outside of the three-layer busbar structure. 4.根据权利要求3所述的一种变流器功率模块结构,其特征在于,所述电容正极母排厚度为1mm,电容N母排厚度为1.5mm,电容负极母排厚度为1mm;绝缘层厚度为0.5mm。4. A converter power module structure according to claim 3, characterized in that the thickness of the capacitor positive busbar is 1 mm, the thickness of the capacitor N busbar is 1.5 mm, the thickness of the capacitor negative busbar is 1 mm; and the thickness of the insulating layer is 0.5 mm. 5.根据权利要求1所述的一种变流器功率模块结构,其特征在于,所述的IGBT模块包括门极板和IGBT元件,IGBT元件通过门极板设置在液冷板上,IGBT元件分别与门极板和模块转接母排电连接。5. The converter power module structure according to claim 1 is characterized in that the IGBT module comprises a gate plate and an IGBT element, the IGBT element is arranged on a liquid cooling plate through the gate plate, and the IGBT element is electrically connected to the gate plate and the module transfer busbar respectively. 6.根据权利要求1所述的一种变流器功率模块结构,其特征在于,所述模块转接母排分为两层母排结构,分别是P母排和Q母排,两层母排结构中间和外部共增加三层绝缘层。6. A converter power module structure according to claim 1, characterized in that the module transfer busbar is divided into two layers of busbar structure, namely P busbar and Q busbar, and three insulation layers are added in the middle and outside of the two layers of busbar structure. 7.根据权利要求6所述的一种变流器功率模块结构,其特征在于,所述P母排厚度为1mm,Q母排厚度为1mm,绝缘层厚度为0.5mm。7. A converter power module structure according to claim 6, characterized in that the thickness of the P busbar is 1 mm, the thickness of the Q busbar is 1 mm, and the thickness of the insulation layer is 0.5 mm. 8.根据权利要求1所述的一种变流器功率模块结构,其特征在于,所述功率模块层叠母排分为三层母排结构,分别是功率正极母排、功率N母排及功率负极母排,所述三层母排结构中间和外部增加四层绝缘层。8. A converter power module structure according to claim 1, characterized in that the power module stacked busbar is divided into a three-layer busbar structure, namely a power positive busbar, a power N busbar and a power negative busbar, and four insulating layers are added in the middle and outside of the three-layer busbar structure. 9.根据权利要求8所述的一种变流器功率模块结构,其特征在于,所述功率正极母排厚度为1mm,功率N母排厚度为1.5mm,功率负极母排厚度为1mm;绝缘层厚度为0.5mm。9. A converter power module structure according to claim 8, characterized in that the thickness of the power positive busbar is 1 mm, the thickness of the power N busbar is 1.5 mm, the thickness of the power negative busbar is 1 mm; and the thickness of the insulation layer is 0.5 mm. 10.一种变流器,其特征在于,包括权利要求1至9任一项所述的变流器功率模块结构。10. A converter, characterized by comprising the converter power module structure according to any one of claims 1 to 9.
CN202421609060.9U 2024-07-09 2024-07-09 Current transformer power module structure and current transformer Active CN222803221U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202421609060.9U CN222803221U (en) 2024-07-09 2024-07-09 Current transformer power module structure and current transformer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202421609060.9U CN222803221U (en) 2024-07-09 2024-07-09 Current transformer power module structure and current transformer

Publications (1)

Publication Number Publication Date
CN222803221U true CN222803221U (en) 2025-04-25

Family

ID=95410651

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202421609060.9U Active CN222803221U (en) 2024-07-09 2024-07-09 Current transformer power module structure and current transformer

Country Status (1)

Country Link
CN (1) CN222803221U (en)

Similar Documents

Publication Publication Date Title
CN104038085B (en) Three Level Converter
CN111640576B (en) Direct-current supporting film capacitor resistant to large ripple current
CN104201867A (en) Three-level IGBT power cabinet based on heat pipe radiator
CN106887955A (en) High-power DC/DC modules
CN203434841U (en) Energy storage converter laminated busbar
CN110365086A (en) A kind of highly integrated charger power cell
CN201682403U (en) Modularized structure device of inverter unit in photovoltaic inverter
CN222803221U (en) Current transformer power module structure and current transformer
CN221127134U (en) Half-bridge power unit, full-bridge power unit, electronic equipment and vehicle
CN202523941U (en) Laminated busbar used for energy storage system
CN213783127U (en) IGBT module structure
CN117674543A (en) Power assembly and converter
CN104426403A (en) Module unit suitable for high-capacity modularized multi-level voltage source converter
CN211744334U (en) Three-level frequency converter structure
CN109905040B (en) Power converter based on high-voltage thyristor
WO2020108412A1 (en) Power module and electric power electronic device
CN221728152U (en) IGBT-based power unit
CN114255996A (en) Novel high-voltage ceramic bus supporting capacitor for automobile inverter
CN106385181A (en) Series IGBT (Insulated Gate Bipolar Transistor) module device-based H-bridge assembly
CN112865489A (en) Centrosymmetric IGBT multi-module parallel device
CN217116761U (en) Middle-high voltage direct-hanging energy storage system and cooling device thereof
CN213547346U (en) Split type energy storage converter unit structure
CN222802724U (en) Power converter and energy storage device
CN221530734U (en) Programme-controlled ac power supply cabinet
CN216872859U (en) Capacitors, converters and wind turbines

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant