CN222191844U - Anti-reverse circuit and electronic device - Google Patents
Anti-reverse circuit and electronic device Download PDFInfo
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- CN222191844U CN222191844U CN202420080881.1U CN202420080881U CN222191844U CN 222191844 U CN222191844 U CN 222191844U CN 202420080881 U CN202420080881 U CN 202420080881U CN 222191844 U CN222191844 U CN 222191844U
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- 238000004146 energy storage Methods 0.000 claims abstract description 18
- 239000003990 capacitor Substances 0.000 claims description 19
- 238000010586 diagram Methods 0.000 description 18
- 230000000694 effects Effects 0.000 description 5
- 230000020169 heat generation Effects 0.000 description 3
- 101100489713 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND1 gene Proteins 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000012544 monitoring process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
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Abstract
The application provides an anti-reflection circuit and electronic equipment, wherein the anti-reflection circuit comprises a positive electrode wire, a negative electrode wire, a diode, a first switch, an energy storage unit and a control circuit, the positive electrode wire is connected with a positive electrode of a power supply and a positive electrode of a load, the negative electrode wire is connected with a negative electrode of the power supply and a negative electrode of the load, the anode of the diode is connected with the positive electrode wire, the cathode of the diode is connected with the negative electrode wire, the first switch is arranged on a conductive path of the positive electrode wire or the negative electrode wire, the control circuit is connected with the anode and the cathode of the diode and a control end of the first switch, and the control circuit is configured to control the first switch to be disconnected when the anode voltage of the diode is smaller than the cathode voltage. The diode is arranged between the positive electrode wire and the negative electrode wire, whether the circuit generates reverse voltage or not can be determined by detecting voltage drops at two ends of the diode, and then the first switch is controlled to be disconnected or connected.
Description
Technical Field
The disclosed embodiments of the present application relate to the field of electronics, and more particularly, to an anti-reflection circuit and an electronic device.
Background
The anti-reverse circuit can prevent the reverse current in the circuit from flowing, thereby playing the role of protecting elements in the circuit.
In some simple circuits, the protection effect can be achieved by using a diode, however, because the diode has larger conduction voltage drop, high power consumption and serious heat generation, an MOS tube is generally used and is monitored by an integrated chip to control the conduction voltage drop of the MOS tube so as to control the conduction or disconnection of the MOS tube, and further simulate the unidirectional conduction effect of the diode, however, the conduction voltage drop of the MOS tube is very small, the MOS tube is realized by high-multiplying power low-noise differential amplification, the circuit is complex, the discrete circuit is difficult to realize, and the MOS tube is generally realized by an application-specific integrated circuit and has high cost.
Therefore, how to reduce the cost of the anti-reflection circuit is a problem to be solved.
Disclosure of utility model
According to an embodiment of the application, an anti-reflection circuit and electronic equipment are provided, so that the cost of the anti-reflection circuit is reduced.
According to an aspect of the present application, an exemplary anti-reflection circuit is disclosed, including a positive line, a negative line, a diode, a first switch, an energy storage unit, and a control circuit, the positive line is connected to a positive electrode of a power source and a positive electrode of a load, the negative line is connected to a negative electrode of the power source and a negative electrode of the load, an anode of the diode is connected to the positive line, a cathode of the diode is connected to the negative line, one end of the energy storage unit is connected to the cathode of the diode, the other end is connected to the negative line, the first switch is disposed on a conductive path of the positive line or the negative line, the control circuit is connected to the anode and the cathode of the diode, and a control end of the first switch is configured to control the first switch to be turned off when an anode voltage of the diode is smaller than a cathode voltage.
According to the scheme, the diode is arranged between the positive electrode wire and the negative electrode wire, whether the circuit generates reverse voltage or not can be determined by detecting voltage drops at two ends of the diode, and then the first switch is controlled to be disconnected or connected, and the diode conduction voltage drop is easier to detect than the MOS tube conduction voltage drop, so that the complexity of the control circuit can be reduced, and the cost of the anti-reflection circuit is further reduced.
The control circuit comprises a comparison unit and a switching unit, wherein the comparison unit is connected with an anode and a cathode of the diode and compares the voltage of the anode and the voltage of the cathode of the diode, the switching unit is connected to the comparison unit and a control end of the first switch, the comparison unit is configured to selectively output a first switching signal to the switching unit based on the voltage magnitude relation of the cathode and the anode of the diode, and the switching unit is configured to control the first switch to be turned off when the first switching signal is received.
According to the scheme, the voltage of the anode and the voltage of the cathode of the diode are compared through the comparison unit, and the first switch is controlled to be disconnected through the switching unit, and the voltage drop at the two ends of the diode are easy to detect, so that the complexity of the comparison unit can be reduced, and the cost of the anti-reflection circuit is further reduced.
The comparison unit comprises a second switch, a first end of the second switch is connected to the cathode of the diode, a second end of the second switch is connected to the anode of the diode, and a third end of the third switch is connected to the switching unit.
According to the scheme, the voltage between the anode and the cathode of the diode is compared through the second switch, so that the complexity of the comparison unit can be further reduced, and the cost of the anti-reflection circuit is further reduced.
The switching unit comprises a third switch, wherein a first end of the third switch is connected to the positive electrode or the negative electrode of the load, a second end of the third switch is connected to the control end of the first switch, the control end of the third switch is connected to the comparison unit, and when the third switch receives the first switching signal, the third switch is conducted between the first end and the second end of the third switch to control the first switch to be disconnected.
According to the scheme, the first switch is controlled to be disconnected through the third switch, so that the complexity of the switching unit can be reduced, and the cost of the anti-reflection circuit is further reduced.
The first switch is a MOSFET, the drain electrode of the first switch is connected to a power supply, the source electrode of the first switch is connected to a load and the control circuit, and the grid electrode of the first switch is connected to the control circuit.
The first switch is a P-type MOSFET, the drain electrode of the first switch is connected to the positive electrode of the power supply, the source electrode of the first switch is connected to the positive electrode of the load and the control circuit, and the grid electrode of the first switch is connected to the negative electrode line and the control circuit.
The first switch is an N-type MOSFET, the drain electrode of the first switch is connected to the negative electrode of the power supply, the source electrode of the first switch is connected to the negative electrode of the load and the control circuit, and the grid electrode of the first switch is connected to the positive electrode wire and the control circuit.
According to the scheme, the MOSFET is used as the circuit conduction path, and the MOSFET conduction voltage is reduced, so that the circuit power consumption can be reduced, and the heat generation can be reduced.
Wherein the energy storage unit is configured to output a voltage to the diode when the power supply voltage drops.
According to the scheme, the energy storage unit outputs voltage to the diode when the power supply voltage is reduced, so that the two ends of the diode bear reverse voltage when the power supply voltage is reduced, namely the analog circuit is connected with the reverse voltage, so that the anti-reflection circuit reacts when the power supply voltage is reduced, and the anti-reflection protection effect is further improved.
The energy storage unit comprises a first capacitor and a first resistor, one end of the first capacitor is connected to the cathode of the diode, the other end of the first capacitor is connected with the negative electrode wire, and the first resistor is connected with the first capacitor in parallel.
According to the scheme, through the first capacitor, the structural complexity of the energy storage unit can be reduced, the cost of the anti-reflection circuit is further reduced, and the first resistor enables the first capacitor to be slowly discharged.
According to a second aspect of the present application, an electronic device is disclosed comprising any one of the anti-reflection circuits of the first aspect.
According to the scheme, the diode is arranged between the positive electrode wire and the negative electrode wire, whether the circuit generates reverse voltage or not can be determined by detecting voltage drops at two ends of the diode, and then the first switch is controlled to be disconnected or connected, and the diode conduction voltage drop is easier to detect than the MOS tube conduction voltage drop, so that the complexity of the control circuit can be reduced, and the cost of the anti-reflection circuit is further reduced.
Drawings
The application will be further described with reference to the accompanying drawings and embodiments, in which:
FIG. 1 is a schematic diagram of a frame of an embodiment of an anti-reflection circuit of the present application;
FIG. 2 is a schematic diagram of a frame of another embodiment of the anti-reflection circuit of the present application;
FIG. 3 is a schematic diagram of a frame of a further embodiment of the anti-reflection circuit of the present application;
FIG. 4 is a schematic diagram of a frame of yet another embodiment of the anti-reflection circuit of the present application;
FIG. 5 is a schematic diagram of a frame of an anti-reflection circuit according to another embodiment of the present application;
FIG. 6 is a schematic diagram of a frame of an anti-reflection circuit according to another embodiment of the present application;
FIG. 7 is a schematic circuit diagram of an anti-reflection circuit according to an embodiment of the present application;
FIG. 8 is a schematic circuit diagram of another embodiment of an anti-reflection circuit of the present application;
fig. 9 is a schematic diagram of a frame of an embodiment of the electronic device of the present application.
Detailed Description
In order to make the technical scheme of the present application better understood by those skilled in the art, the technical scheme of the present application will be further described in detail with reference to the accompanying drawings and the detailed description.
In one aspect, referring to fig. 1, fig. 1 is a schematic diagram of a frame of an embodiment of an anti-reflection circuit of the present application, specifically, the anti-reflection circuit 100 includes a positive line, a negative line, a diode, a first switch 110 and a control circuit 120, the positive line is connected to a positive power source and a positive load, the negative line is connected to a negative power source and a negative load, an anode of the diode is connected to the positive line, a cathode of the diode is connected to the negative line, one end of an energy storage unit 130 is connected to the cathode of the diode, the other end of the energy storage unit is connected to the negative line, the first switch 110 is disposed on a conductive path of the positive line or the negative line, the control circuit 120 is connected to the anode and the cathode of the diode, and a control end 110a of the first switch 110, and the control circuit 120 is configured to control the first switch 110 to be turned off when an anode voltage of the diode is smaller than a cathode voltage.
As shown in fig. 1, the control circuit 120 may be configured to detect a voltage drop across the diode, and when the power source outputs a voltage in a forward direction, that is, when the power source anode voltage is greater than the power source cathode voltage, the diode anode voltage is greater than the cathode voltage, and the control circuit 120 controls the first switch 110 to be turned off so as to cut off a reverse current, so as to prevent damage to other elements in the circuit caused by the reverse current.
According to the scheme, the diode is arranged between the positive electrode line and the negative electrode line, whether the circuit generates reverse voltage or not can be determined by detecting the voltage drop at the two ends of the diode, and then the first switch 110 is controlled to be turned off or turned on, and the complexity of the control circuit 120 can be reduced due to the fact that the voltage drop of the diode is easier to detect than the voltage drop of the MOS tube, and then the cost of the anti-reflection circuit 100 is reduced.
In some embodiments, please refer to fig. 2, fig. 2 is a schematic diagram of a frame of another embodiment of the anti-reflection circuit of the present application, the control circuit 120 includes a comparing unit 121 and a switching unit 122, the comparing unit 121 is connected to an anode and a cathode of a diode, voltage magnitudes of the anode and the cathode of the diode are compared, the switching unit 122 is connected to the comparing unit 121 and a control terminal 110a of the first switch 110, wherein the comparing unit 121 is configured to selectively output a first switching signal to the switching unit 122 based on a voltage magnitude relationship of the cathode and the anode of the diode, and the switching unit 122 is configured to control the first switch 110 to be turned off when the first switching signal is received.
In the above scheme, the comparing unit 121 compares the voltages of the anode and the cathode of the diode, and the switching unit 122 controls the first switch 110 to be turned off, so that the complexity of the comparing unit 121 can be reduced due to the fact that the voltage drop across the diode is easy to detect, and the cost of the anti-reflection circuit 100 can be further reduced.
In some embodiments, the comparison unit 121 may include a voltage comparator by which a voltage drop across the diode is compared, and it can be determined whether a reverse voltage exists across the diode.
In some embodiments, the comparing unit 121 may include a second switch having a first terminal connected to the diode cathode, a second terminal connected to the diode anode, and a third terminal connected to the switching unit 122.
In the above-mentioned scheme, the voltage between the anode and the cathode of the diode is compared by the second switch, so that the complexity of the comparing unit 121 can be further reduced, and the cost of the anti-reflection circuit 100 can be further reduced.
In some embodiments, the second switch may be a triode, please refer to fig. 3, fig. 3 is a schematic diagram of a frame of another embodiment of the anti-reflection circuit of the present application, as shown in fig. 3, the second switch may be a NPN triode, an emitter of which is connected to an anode of a diode, a base of which is connected to a cathode of the diode, a collector of which is connected to the switching unit 122, a diode turn-on voltage drop of 0.7V can be used to drive the triode, when the positive voltage of the power supply is higher than the negative voltage of the power supply, an emitter voltage of the triode Q1 is higher than the collector voltage, the triode Q1 is turned off, when the positive voltage of the power supply is higher than the negative voltage of the power supply, the emitter voltage of the triode Q1 is lower than the collector voltage, and the triode Q1 is turned on, therefore, the triode Q1 can control its on or off state according to whether the power supply outputs a reverse voltage, and outputs different level signals to the switching unit 122, respectively instructs the power supply to output a forward voltage and a reverse voltage according to different level signals.
In other embodiments, the triode Q1 may also have a base connected to the anode of the diode, an emitter connected to the cathode of the diode, and a collector connected to the switching unit 122. The second switch may also be a MOSFET, which may be connected in series with the diode through a resistor to increase the gate-source voltage of the MOSFET to reach the threshold voltage for driving the MOSFET. The second switch may also take other embodiments not pointed out by the present application.
It should be noted that the first switching signal may be a high level signal or a low level signal, and may be configured according to an actual type of the second switch and an actual circuit structure, which is not limited in the present application.
In some embodiments, the switching unit 122 may include a third switch having a first terminal connected to the load positive electrode or the load negative electrode, a second terminal connected to the control terminal 110a of the first switch 110, the control terminal 110a connected to the comparing unit 121, and the third switch being configured to be turned on between the first terminal and the second terminal when receiving the first switching signal, and to control the first switch 110 to be turned off.
In the above-mentioned scheme, the third switch controls the first switch 110 to be turned off, so that the complexity of the switching unit 122 can be reduced, and the cost of the anti-reflection circuit 100 can be further reduced.
Referring to fig. 4, fig. 4 is a schematic diagram of a frame of an anti-reflection circuit according to another embodiment of the application, as shown in fig. 4, the third switch may be a PNP transistor, the base of which is connected to the comparing unit 121, the emitter of which is connected to the positive line, and the collector of which is connected to the control terminal 110a of the first switch 110, so that the transistor Q2 can output a high level or low level signal to the control terminal 110a of the first switch 110 through its on or off state to control the on or off of the first switch 110.
The third switch may also be a MOSFET or the like, and the present application is not limited thereto.
In some embodiments, the first switch 110 may be a MOSFET, with the drain of the first switch 110 connected to a power source, the source connected to a load and the control circuit 120, and the gate connected to the control circuit 120. Since the MOSFET is used as a circuit conduction path and the MOSFET conduction voltage is reduced, the circuit power consumption can be reduced and heat generation can be reduced.
In some embodiments, referring to fig. 5, fig. 5 is a schematic diagram of a frame of an anti-reflection circuit according to another embodiment of the application, specifically, the first switch 110 may be a P-type MOSFET, the drain of the first switch 110 is connected to the positive electrode of the power source, the source is connected to the positive electrode of the load and the control circuit 120, and the gate is connected to the negative electrode line and the control circuit 120 through a resistor.
In some embodiments, referring to fig. 6, fig. 6 is a schematic diagram of a frame of another embodiment of the anti-reflection circuit of the present application, specifically, the first switch 110 may be an N-type MOSFET, the drain of the first switch 110 is connected to the negative electrode of the power source, the source is connected to the negative electrode of the load and the control circuit 120, and the gate is connected to the positive line and the control circuit 120 through a resistor.
In some embodiments, the energy storage unit 130 is configured to output a voltage to the diode when the power supply voltage drops.
In some embodiments, as shown in fig. 3 to 6, the energy storage unit 130 may include a first capacitor C1 and a first resistor R1, where one end of the first capacitor C1 is connected to the cathode of the diode, and the other end is connected to the negative line. The first resistor R1 is connected in parallel with the first capacitor C1. Specifically, the energy storage unit 130 may include a plurality of first capacitors, and the specific number of the first capacitors of the energy storage unit 130 is not limited by the present application.
In the above scheme, through the first capacitor, the structural complexity of the energy storage unit 130 can be reduced, so that the cost of the anti-reflection circuit 100 is reduced.
Referring to fig. 7, fig. 7 is a schematic circuit diagram of an embodiment of an anti-reflection circuit of the present application, wherein, as shown in fig. 7, a drain electrode of a P-type MOSFET M1 is connected to a power source positive electrode Vin, a source electrode is connected to a load positive electrode Vout, a gate electrode is grounded GND through a resistor R4, an anode electrode of a diode D1 is connected to the power source positive electrode Vin, a cathode electrode is grounded through the resistor R1 and a capacitor C1, an emitter electrode of an NPN triode Q1 is connected to the diode D1, a base electrode is connected to a cathode electrode of the diode D1 through a resistor R3, a collector electrode is connected to a base electrode of a PNP triode Q2 through a resistor R2, and an emitter electrode and a collector electrode of the triode Q2 are respectively connected to a source electrode and a gate electrode of the MOSFET and two ends of the capacitor C2. Therefore, when the power supply outputs a forward voltage, that is, the voltage of the positive electrode Vin of the power supply is larger than the ground voltage, the anode voltage of the diode D1 is larger than the cathode voltage, that is, the emitter voltage of the NPN triode is larger than the collector voltage, so that the triode Q1 is turned off, the triode Q2 is turned off, the MOSFET can be turned on when the absolute value of the voltage between the grids and the sources of the MOSFET is larger than the threshold voltage, and when the power supply outputs a reverse voltage, that is, the voltage of the positive electrode Vin of the power supply is smaller than the ground voltage or the voltage of the positive electrode Vin of the power supply drops instantly, the anode voltage of the diode D1 is smaller than the cathode voltage, that is, the emitter voltage of the NPN triode is smaller than the collector voltage, the triode Q1 is turned on, the triode Q2 is turned on, the grid source voltage of the MOSFET is pulled down due to the conduction of the triode Q2, and the MOS tube M1 is turned off.
Referring to fig. 8, fig. 8 is a schematic circuit diagram of another embodiment of the anti-reflection circuit of the present application, wherein as shown in fig. 8, a drain electrode of an N-type MOSFET M1 is connected to a power negative electrode GND, a source electrode is connected to a load negative electrode GND1, a gate electrode is connected to a power positive electrode Vin through a resistor R4, an anode electrode of a diode D1 is connected to the power positive electrode Vin through a resistor R1 and a capacitor C1, a cathode electrode is connected to the power negative electrode GND, an emitter electrode of a PNP transistor Q1 is connected to the diode D1, a base electrode is connected to an anode electrode of the diode D1 through a resistor R3, a collector electrode is connected to a base electrode of an NPN transistor Q2 through a resistor R2, and an emitter electrode and a collector electrode of the transistor Q2 are connected to a source electrode and a gate electrode of the MOSFET and two ends of the capacitor C2. Therefore, when the power supply outputs a forward voltage, that is, the voltage of the positive electrode Vin of the power supply is larger than the ground voltage, the anode voltage of the diode D1 is larger than the cathode voltage, that is, the emitter voltage of the PNP triode Q1 is smaller than the collector voltage, so that the triode Q1 is cut off, the triode Q2 is cut off, the MOSFET can be turned on when the absolute value of the voltage between the grid sources of the MOSFET is larger than the threshold voltage, and when the power supply outputs a reverse voltage, that is, the voltage of the positive electrode Vin of the power supply is smaller than the ground voltage or the voltage of the positive electrode Vin of the power supply drops instantly, the anode voltage of the diode D1 is smaller than the cathode voltage due to the energy storage effect of the capacitor C1, the triode Q1 is turned on, the triode Q2 is turned on, the grid source voltage of the MOSFET is pulled down due to the conduction of the triode Q2, and the MOS tube M1 is turned off.
Above-mentioned scheme, circuit structure is simple, and through MOSFET control circuit break-make, the action time can be less than 1 microsecond, and then improves the effect of blocking reverse current to because MOSFET switches on the pressure drop little, can reduce and generate heat and reduce the consumption.
The second aspect of the present application proposes an electronic device, please refer to fig. 9, fig. 9 is a schematic frame diagram of an embodiment of the electronic device of the present application, and specifically, the electronic device 200 includes the anti-reflection circuit 100 in any of the embodiments of the first aspect.
The electronic device may be a power output device, or may be a device having an imaging function, such as a handheld camera, a fixed camera, or the like, for example, a monitoring camera.
Those skilled in the art will readily appreciate that many modifications and variations are possible in the device and method while maintaining the teachings of the application. Accordingly, the above disclosure should be viewed as limited only by the scope of the appended claims.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202420080881.1U CN222191844U (en) | 2024-01-11 | 2024-01-11 | Anti-reverse circuit and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202420080881.1U CN222191844U (en) | 2024-01-11 | 2024-01-11 | Anti-reverse circuit and electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN222191844U true CN222191844U (en) | 2024-12-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202420080881.1U Active CN222191844U (en) | 2024-01-11 | 2024-01-11 | Anti-reverse circuit and electronic device |
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| Country | Link |
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| CN (1) | CN222191844U (en) |
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- 2024-01-11 CN CN202420080881.1U patent/CN222191844U/en active Active
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