Dustproof lamp box structure with sealed fence
Technical Field
The utility model relates to the technical field of dustproof lamp box equipment, in particular to a fence sealing type dustproof lamp box structure.
Background
COB, chip-on-board packaging technology, i.e. a semiconductor packaging technology in which chips are adhered to an interconnection substrate by conductive or non-conductive adhesive and then wire bonded to achieve electrical connection. In short, the light emitting chip is directly attached to the PCB without a bracket or a soldering leg. Compared with the traditional SMD method, COB encapsulation omits two major processes of manufacturing the LED chip into a lamp bead and reflow soldering. However, in a workshop factory with poor general environment, the COB chip is difficult to protect because the COB has no support of the traditional lamp beads and is not protected by the bonding glass;
The conventional COB substrate grows steps by adopting a mode of gluing a dam at the edge of a chip, plating gold or melting gold, is covered by using small-size planar quartz glass, is sealed by gluing four sides, and can be used as an independent module;
the other mode is that after the chip is fixed on the surface of the ceramic substrate, the surface of each independent chip or the whole surface point of the chip is covered and sealed by silica gel, one of the modes of the silica gel is planar covering, and the other mode of the silica gel is hemispherical covering, and dust is extremely easy to adhere due to the characteristics of the silica gel, so that local temperature is too high, and surface yellowing or ablation is caused.
At present, in actual production, the traditional non-shielding COB light source cannot avoid a large amount of pollutants such as dust, rosin, scaling powder and the like existing in a production line, so that the luminous efficiency and the service life of a chip are affected, the COB dust-proof protection technology cannot protect the high-density high-power COB light source, the uniformity of four sides cannot be guaranteed in a glue-applying dam manner, dust easily enters an inner space, the pollution of the chip is caused, and a gold-plating or gold-melting sealing effect is good, but the cost is high;
For COB with high power density, the spacing between chips is very small, the chip spacing between boards is still kept unchanged when multiple substrates are spliced, and the conventional mode cannot meet the requirements. Because the conventional mode needs to reserve the area of the dam or the growth step in advance, when multiple substrates are spliced, the ineffective width is increased by two times, and finally, when the spliced gaps emit light, a large-area strip shadow area is formed, so that the overall light-emitting uniformity cannot be met;
The silica gel sealing mode on the surface of the chip is extremely easy to adhere dust, when the device is used for a long time, the dust on the surface of the silica gel continuously absorbs heat, surface yellowing or ablation is easy to cause, normal light emitting of the chip is affected, when the situation is serious, large-area black spots and pits can be formed, silica gel burn-through is caused, and finally the chip breaks down, so that the device provides a dustproof lamp box structure with a sealed fence.
Disclosure of utility model
The utility model aims to overcome the defects of the prior art and provide a dustproof lamp box structure with a sealed fence, so as to solve the technical problems.
The embodiment of the utility model adopts the following technical scheme that the COB high-density substrate comprises two COB high-density substrates, a fixing mechanism, a radiator, pressing strips and a glass cover, wherein the COB high-density substrates are fixed in the radiator through the fixing mechanism in a bolt fixing mode and the matching of the corresponding pressing strips, the glass cover covers the radiator so that the COB high-density substrates are arranged in the radiator in a sealing mode, the glass cover and the radiator are fixed in a mode of surrounding the periphery by glue, the COB high-density substrates consist of a plurality of ALN substrates, the ALN substrates are arranged in two groups and are symmetrically arranged in sequence, the ALN substrates are in a seamless splicing mode, the lengths of the ALN substrates are not more than 130mm, the widths of the ALN substrates are not more than 20mm, and the internal circuits of the ALN substrates are in a serial, parallel or serial-parallel mode.
Further, the ALN substrates comprise chips, interval areas and pad terminal areas, the end parts of the interval areas are provided with fixing hole sites, and the chips and the pad terminal areas are separated by the interval areas, and the width of the interval areas is smaller than or equal to 10mm.
Further, the fixing mechanism comprises a plurality of fixing bolts, internal threads matched with the corresponding fixing bolts are arranged inside the fixing holes at the end parts of the interval areas, connecting holes corresponding to the fixing holes and matched with the fixing holes are formed in the pressing strips, and the fixing bolts can penetrate through the corresponding connecting holes to be in threaded connection with the corresponding fixing holes.
Furthermore, the glass cover can be quartz glass or high-transmittance infrared glass, and two groups of step grooves matched with the glass cover in a placing and bonding mode are arranged at two ends of the radiator.
Further, the two pressing strips are made of nonmetal materials.
Further, a thermal interface material layer is arranged between the contact surface of the COB high-density substrate and the interior of the radiator, and the contact surface of the interior of the radiator and the thermal interface material layer is made of aluminum or red copper materials.
The above at least one technical scheme adopted by the embodiment of the utility model can achieve the following beneficial effects:
the utility model adopts the whole fence sealing mode, is beneficial to reducing the cost, has obvious advantages in COB application of high power density arrangement, can lead the chip arrangement to be closer to the edge, avoids the shadow area generated by the existence of the dam of the traditional substrate joint area, has more uniform whole light emission and good sealing effect, can lead the surface of the chip to be relatively clean for a long time, avoids dust or other sundries from entering, influences the normal light emission of the chip, ensures the stability and long service life of equipment, and simultaneously, a plurality of ALN substrates are spliced seamlessly, and when the whole light emission is carried out, the joint area has no strip shadow, thus ensuring the uniformity of light output;
dust on the surface of the silica gel cannot continuously absorb heat, so that the occurrence of surface yellowing or ablation and the normal light-emitting condition affecting a chip are greatly reduced, meanwhile, large-area black spots and pits cannot be formed to cause silica gel burning, the chip breakdown caused finally is avoided, and the use stability and the service life are passed;
Firstly, a plurality of ALN substrates are spliced seamlessly, after the splicing is completed, the ALN substrates are placed inside a radiator and are just positioned at the position where the contact surface of the radiator is made of aluminum or ultraviolet materials, then, two nonmetallic pressing strips are corresponding to corresponding fixing hole sites according to corresponding connecting holes, at the moment, a plurality of fixing bolts penetrate through the corresponding connecting holes and rotate, the corresponding fixing bolts are in threaded connection with the corresponding fixing hole sites, so that the COB high-density substrate is fixed inside the radiator in a bolt fixing mode, then, a glass cover is placed according to corresponding step grooves to cover the COB high-density substrate, glue is evenly applied to the periphery of the glass cover, the inside of the radiator is sealed, the chip area is isolated from the outside, and dust is prevented from entering.
Drawings
The accompanying drawings, which are included to provide a further understanding of the utility model and are incorporated in and constitute a part of this specification, illustrate embodiments of the utility model and together with the description serve to explain the utility model and do not constitute a limitation on the utility model. In the drawings:
FIG. 1 is a schematic perspective view of the present utility model;
FIG. 2 is a schematic diagram of a split state structure according to the present utility model;
FIG. 3 is a schematic diagram showing a distribution state structure of a COB high-density substrate according to the present utility model;
FIG. 4 is a schematic diagram showing a distribution state of a COB high-density substrate according to the present utility model;
Fig. 5 is a schematic perspective view of an ALN substrate according to the present utility model.
Reference numerals
COB high-density substrate 1, ALN substrate 11, chip 111, spacer region 112, pad terminal region 113, fixing mechanism 2, heat spreader 3, step groove 31, molding bar 4, and connection hole 41.
Detailed Description
In order to make the objects, technical solutions and advantages of the present utility model more apparent, the technical solutions of the present utility model will be clearly and completely described below with reference to specific embodiments of the present utility model and corresponding drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the utility model. Based on the embodiments of the present utility model, all other embodiments that a patient of ordinary skill in the art could obtain without making any inventive effort are within the scope of the present utility model.
The following describes in detail the technical solutions provided by the embodiments of the present utility model with reference to the accompanying drawings.
The embodiment of the utility model provides a dustproof lamp box structure sealed by a fence, which comprises COB high-density substrates 1, a fixing mechanism 2, a radiator 3, pressing strips 4 and glass covers, wherein two pressing strips 4 are arranged, the COB high-density substrates 1 are fixed in the radiator 3 through the fixing mechanism 2 in a bolt fixing mode and the matching of the corresponding pressing strips 4, the glass covers are covered on the radiator 3 so that the COB high-density substrates 1 are positioned in the radiator 3 in a sealing mode, the glass covers and the radiator 3 are fixed in a mode of surrounding the periphery by glue, the COB high-density substrates 1 are composed of a plurality of ALN substrates 11, the ALN substrates 11 are arranged in two groups and are sequentially and symmetrically arranged, the ALN substrates 11 are in a seamless splicing mode, the lengths of the ALN substrates 11 are no more than 130mm and the widths of the ALN substrates are no more than 20mm, the internal circuits of the ALN substrates 11 are in a serial, parallel or serial-parallel connection mode,
The device adopts the whole fence sealing mode, is beneficial to reducing the cost, has obvious advantages in COB application of high-power density arrangement, can lead the chip 111 to be arranged closer to the edge, avoids the shadow area generated by the existence of the dam in the joint area of the traditional substrate, has more uniform whole light emission and good sealing effect, can lead the surface of the chip 111 to be relatively clean for a long time, avoids dust or other sundries from entering, influences the normal light emission of the chip 111, ensures the stability and long service life of equipment, and simultaneously, a plurality of ALN substrates 11 are spliced seamlessly, and the joint area has no strip shadow when the whole light emission, thereby ensuring the uniformity and lower cost of light output;
The dust on the silica gel surface of the device can not continuously absorb heat, so that the occurrence of surface yellowing or ablation and the normal light-emitting condition affecting the chip are greatly reduced, meanwhile, large-area black points and pits can not be formed, silica gel burning-through is caused, the chip breakdown is avoided finally, and the use stability and the service life are improved.
In a further preferred embodiment of the present utility model, the plurality of ALN substrates 11 each include a chip 111, a spacing area 112 and a pad terminal area 113, fixing holes are disposed at the ends of the spacing area 112, the chip 111 and the pad terminal area 113 are separated by the spacing area 112, the width of the spacing area 112 is less than or equal to 10mm, the fixing mechanism 2 includes a plurality of fixing bolts, internal threads adapted to the corresponding fixing bolts are disposed in the fixing holes at the ends of the plurality of spacing areas 112, connecting holes 41 corresponding to and adapted to the plurality of fixing holes are disposed on the two pressing strips 4, the plurality of fixing bolts can be screwed to the corresponding fixing holes through the corresponding connecting holes 41, the glass cover can be quartz glass or high-transmittance infrared glass, two sets of step grooves 31 adapted to the placement and bonding of the glass cover are disposed at the two ends of the heat sink 3, a thermal interface material layer is disposed between the contact surface of the COB high-density substrate 1 and the inside of the heat sink 3, the contact surface material layer of the heat sink 3 and the inside of the heat sink 3 is made of aluminum or copper interface material,
The heat interface material layer is arranged between the contact surface of the COB high-density substrate 1 and the inside of the radiator 3, and the contact surface of the inside of the radiator 3 and the heat interface material layer is made of aluminum or red copper material, so that heat conduction can be facilitated, and a good heat dissipation effect is achieved.
The whole design concept of the device is that the edges of chips 111 and bonding pad terminal areas 113 in corresponding ALN substrates 11 are separated by interval areas 112, the width of the interval areas 112 is less than or equal to 10mm, hole sites are reserved in the interval, so that the pressing strips 4 are convenient to fix, the pressing strips 4 are made of nonmetallic materials, and short circuits caused by contact between metal and a circuit layer on the surface of the substrate are prevented. After all the substrates are spliced in the radiator 3 in a seamless manner, the nonmetallic pressing strips 4 with special structural design are adopted on two sides to integrally press, meanwhile, bonding wire bonding pads or patch terminals are considered to avoid, the substrates are fixed on the radiator 3 through screws, quartz glass or high-transmittance infrared glass is covered at last, at this time, the two sides of the glass are placed in the step grooves 31 of the pressing strips 4, the other two sides of the glass are placed in the step grooves 31 of the radiator 3, four sides of the glass are bonded and sealed through glue, and the area of the chip 111 is isolated from the outside, so that dust is prevented from entering.
The device is characterized in that a plurality of ALN substrates 11 are spliced in a seamless manner, the ALN substrates are placed inside a radiator 3 after the splicing is completed, the contact surface of the radiator 3 is just positioned at the position where aluminum or ultraviolet materials are adopted, then two nonmetal pressing strips 4 correspond to corresponding fixing holes according to corresponding connecting holes 41, at the moment, a plurality of fixing bolts penetrate through the corresponding connecting holes 41 and rotate, the corresponding fixing bolts are in threaded connection with the corresponding fixing holes, the COB high-density substrate 1 is fixed inside the radiator 3 in a bolt fixing manner, then a glass cover is placed according to corresponding step grooves 31 to cover the COB high-density substrate 1, glue is evenly applied to the periphery of the glass cover, the inside of the radiator 3 is sealed, the area of a chip 111 is isolated from the outside, and dust is prevented from entering.
The foregoing is merely exemplary of the present utility model and is not intended to limit the present utility model. Various modifications and variations of the present utility model are possible to those skilled in the art. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the utility model are to be included in the scope of the claims of the present utility model.