CN221486489U - Three-level power module with pin fin heat dissipation substrate - Google Patents
Three-level power module with pin fin heat dissipation substrate Download PDFInfo
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- CN221486489U CN221486489U CN202323521565.8U CN202323521565U CN221486489U CN 221486489 U CN221486489 U CN 221486489U CN 202323521565 U CN202323521565 U CN 202323521565U CN 221486489 U CN221486489 U CN 221486489U
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Abstract
The utility model discloses a three-level power module with a pin fin heat dissipation substrate, and belongs to the technical field of power modules; the pin fin heat dissipation device comprises a pin fin heat dissipation substrate, wherein a plurality of heat dissipation pin fins are arranged on a first surface of the pin fin heat dissipation substrate, and an insulating substrate is arranged on a second surface of the pin fin heat dissipation substrate, which is opposite to the first surface; the insulating substrate is provided with a chip part of the power device and a signal terminal, the chip parts of the power device are connected through metal lead wire bonding, and the insulating substrate, the chip part of the power device, the signal terminal and the metal lead wire are respectively coated with silica gel. The beneficial effects of the technical scheme are as follows: by adopting the technical scheme, the thermal resistance of the power module is reduced, the capability of resisting transient thermal shock is enhanced, and the heat dissipation efficiency is improved.
Description
Technical Field
The utility model relates to the technical field of power modules, in particular to a three-level power module with a pin fin heat dissipation substrate.
Background
The three-level power module is mainly applied to the photovoltaic market at present, the power grid has strict requirements on the quality of the power module, and therefore, the requirements on high power density, high heat dissipation and the like are provided, and the requirements on the thermal shock resistance of a chip, the overall thermal resistance of the module and the heat dissipation capacity of the power module are further improved while the structure and the circuit of the power module have high reliability.
In the prior art, most photovoltaic market application modules adopt a mode of coating a planar substrate with heat-conducting silicone grease to dissipate heat, a steel mesh is used for printing the heat-conducting silicone grease on a metal planar substrate, then the modules are arranged on a heat dissipation plate, the heat shock resistance of chips is not strong, and the overall heat resistance of the modules is high; the heat conduction characteristic of the heat conduction silicone grease determines the heat dissipation effect of the photovoltaic module, but the contact area of the planar substrate and the heat dissipation plate is smaller, and the heat conduction silicone grease is fast in deterioration speed in environments such as drying and high temperature, so that the heat dissipation effect of the module is poor.
Disclosure of utility model
The utility model aims to provide a three-level power module with a pin fin heat dissipation substrate, which solves the technical problems;
A three-level power module with pin fin heat dissipation substrate comprises,
The pin fin heat dissipation substrate is characterized in that a plurality of heat dissipation pin fins are arranged on a first surface of the pin fin heat dissipation substrate, and an insulating substrate is arranged on a second surface of the pin fin heat dissipation substrate opposite to the first surface;
The power device comprises an insulating substrate, wherein a chip part of the power device and a signal terminal are arranged on the insulating substrate, the chip parts of the power device are connected through metal lead wire bonding, and silica gel is respectively coated on the insulating substrate, the chip part of the power device, the signal terminal and the metal lead wire.
Preferably, solder is arranged between the chip part of the power device and the insulating substrate;
the solder is arranged between the insulating substrate and the pin fin heat dissipation substrate.
Preferably, the chip part of the power device is a chip part of an insulated gate bipolar transistor and a diode.
Preferably, the height of the heat dissipation pin fins is 5 mm-25 mm, and the gaps among the heat dissipation pin fins are 1 mm-10 mm.
Preferably, the number of the heat dissipation pin fins is 20-100, and the shape of the heat dissipation pin fins is round or oval.
Preferably, baffles are arranged on two sides of the pin fin heat dissipation substrate along the length direction, and the two baffles comprise all the heat dissipation pin fins.
Preferably, the surface of the chip part of the power device is provided with a plating layer.
Preferably, the pin fin heat dissipation device further comprises a plastic shell, wherein the plastic shell is positioned above the pin fin heat dissipation substrate, and sealant is arranged between the plastic shell and the pin fin heat dissipation substrate.
Preferably, screw holes for installation are formed in two ends of the pin fin heat dissipation substrate.
Preferably, the insulating substrate includes a substrate having a plurality of conductive layers,
A first conductive layer;
an intermediate insulating layer located below the first conductive layer;
And the second conductive layer is positioned below the middle insulating layer.
The beneficial effects of the utility model are as follows: by adopting the technical scheme, the thermal resistance of the power module is reduced, the capability of resisting transient thermal shock is enhanced, and the heat dissipation efficiency is improved.
Drawings
FIG. 1 is a schematic diagram of a three-level power module with pin fin heat dissipating substrate of the present utility model;
FIG. 2 is a schematic diagram of a three-level power module with pin fin heat dissipation substrate according to the present utility model;
FIG. 3 is a rear view of a three level power module with a pin fin heat sink substrate of the present utility model;
FIG. 4 is a side view of a three-level power module with pin fin heat spreading substrate of the present utility model in a length direction;
Fig. 5 is a side view of a three-level power module with pin fin heat spreading substrate of the present utility model in the width direction;
fig. 6 is a side view of the pin fin heat dissipating substrate of the present utility model.
In the accompanying drawings: 1. pin fin heat dissipation substrate; 2. an insulating substrate; 3. a chip portion of the power device; 4. a silicone gel; 5. a signal terminal; 6. a plastic housing; 7. a metal lead; 8. a screw hole; 9. radiating pin fins.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
It should be noted that, without conflict, the embodiments of the present utility model and features of the embodiments may be combined with each other.
The utility model is further described below with reference to the drawings and specific examples, which are not intended to be limiting.
A three-level power module with pin fin heat dissipation substrate, as shown in figures 1, 4 and 5, comprises,
The pin fin heat dissipation substrate 1, wherein a plurality of heat dissipation pin fins 9 are arranged on a first surface of the pin fin heat dissipation substrate 1, and an insulating substrate 2 is arranged on a second surface of the pin fin heat dissipation substrate 1 opposite to the first surface;
The insulating substrate 2 is provided with a chip part 3 of the power device and a signal terminal 5, the chip parts 3 of the power device are connected by bonding through a metal lead 7, and the insulating substrate 2, the chip part 3 of the power device, the signal terminal 5 and the metal lead 7 are respectively coated with the silica gel 4.
Specifically, the utility model provides a three-level power module with a pin fin heat dissipation substrate, which is used for heat dissipation of the power module, the pin fin (pinfin) heat dissipation substrate 1 is beneficial to reducing the heat resistance and the chip junction temperature of the power module, effectively enhancing the capability of resisting transient thermal shock, being beneficial to improving the overall heat dissipation performance and reliability, and the pin fin heat dissipation substrate 1 can enhance the fluid turbulence effect under the water cooling or air cooling condition and improve the heat dissipation efficiency.
Further specifically, the chip part 3 of the power device is electrically connected in a bonding manner of the metal lead 7, the conductive layers corresponding to the chip part 3 and the insulating substrate 2 of the power device are electrically connected through a copper sheet and a vacuum reflow soldering process, the signal terminal 5 is welded on the conductive copper layer of the insulating substrate 2 through vacuum reflow soldering, the insulating substrate 2 is welded or directly integrated on the pin fin heat dissipation substrate 1 through vacuum reflow soldering, the high-temperature-resistant insulating silica gel 4 is covered to improve the withstand voltage between the elements, the heat capacity of copper materials is generally larger, the capability of the chip parts of the insulated gate bipolar transistor and the diode against transient thermal shock is improved, and fluctuation of the junction temperature of the chip is reduced; the effective integration of the power module and the heat dissipation substrate 2 is achieved by a method of directly soldering the insulating substrate 2 to the pin fin heat dissipation substrate 1.
More specifically, the metal lead 7 is made of pure aluminum, pure copper or aluminum alloy, and is bonded and connected between the chip parts of the insulated gate bipolar transistor and the diode, the conductive upper copper layer of the insulating substrate 2 and the signal terminal 5 in an ultrasonic welding mode, the surface of the signal terminal 5 is bare copper or electroplated chromium or nickel or gold or silver, and the bare copper is welded on the conductive copper layer of the insulating substrate 2 through vacuum reflow welding, so that the bare copper has good conductive performance, can effectively transmit signals, and improves signal transmission quality; the chromium plating can increase the hardness and the wear resistance of the signal terminal 5, reduce the contact resistance and improve the stability and the reliability of signal transmission; nickel has good corrosion resistance, can prevent the oxidation corrosion of the signal terminal 5, and prolongs the service life; gold has excellent conductivity and corrosion resistance, can improve the stability and reliability of signal transmission, and has good appearance effect; silver has the best conductivity, can provide the best signal transmission quality, and has good corrosion resistance.
In a preferred embodiment, solder is provided between the chip part 3 of the power device and the insulating substrate 2;
Solder is provided between the insulating substrate 2 and the pin fin heat dissipation substrate 1.
Specifically, the solder is made of tin-lead, tin-silver-copper or lead-tin-silver material, the pin fin heat dissipation substrate 1 is made of copper, aluminum, copper alloy or aluminum alloy, and the tin-lead solder has low melting point, good wettability and reliable welding performance, can form good welding joints, and provides good electric connection and heat conduction performance; the tin-silver solder has higher melting point and good electrical conductivity, has better stability and reliability in a high-temperature environment, and is suitable for high-temperature application scenes; the tin-silver-copper solder is a multicomponent alloy solder, has a higher melting point and good electrical conductivity, can provide higher strength and heat resistance, and is suitable for high-power and high-temperature application; the Pb-Sn-Ag solder is a low-temperature solder, has a low melting point and good wettability, is suitable for devices sensitive to temperature, and can reduce thermal stress and thermal damage.
Further specifically, the insulating substrate 2 is made by DBC (direct bonding copper) technology or AMB (active metal brazing) technology, and the highest temperature of welding between the insulating substrate 2 and the pin fin heat dissipation substrate 1 is controlled to be 150-420 ℃; the highest temperature of the welding between the chip part 3 of the power device and the insulating substrate 2 is also controlled to be 150-420 ℃.
In a preferred embodiment, the chip part 3 of the power device is a chip part of an insulated gate bipolar transistor as well as a diode.
Specifically, an insulated gate bipolar transistor, i.e., an IGBT, is a high voltage, high current power switching device, combines high input impedance of a MOSFET (metal oxide semiconductor field effect transistor) with low saturation voltage drop characteristics of a bipolar transistor, and has unidirectional conductivity; the chip part 3 of the power device has the advantages of low conduction voltage drop, high switching speed, higher power density and the like.
In a preferred embodiment, the height of the heat dissipation pin fins 9 is 5mm to 25mm, and the gap between the heat dissipation pin fins 9 is 1mm to 10mm.
Specifically, the length and width of the heat dissipation pin fins 9 are distributed differently and are equal in height, the cooling liquid or air can circularly flow between the gaps to take away heat through the design of the heat dissipation pin fins 9 (pin pins), the contact area of the cooling liquid or air and the substrate is greatly increased, the heat dissipation pin fin is more efficient than a traditional heat dissipation mode adopting heat conduction silicone grease, and the heat dissipation pin fin is beneficial to the reduction of the overall thermal resistance of a power module and the reduction of the junction temperature of a chip during working.
In a preferred embodiment, the number of the heat dissipation pin fins 9 is 20 to 100, and the shape of the heat dissipation pin fins 9 is circular or elliptical.
Specifically, the larger the number of heat dissipation pin fins 9, the larger the surface area, and more heat dissipation surface can be provided, thereby increasing the heat dissipation effect. The heat dissipation pin fins 9 which are round or oval in shape can better cover the surface of the heat radiator, increase the contact area with surrounding air and improve the heat dissipation efficiency.
In a preferred embodiment, baffles are provided along both sides of the pin fin heat dissipating substrate 1 in the length direction, both baffles including all heat dissipating pin fins 9.
Specifically, the pin fin heat dissipation substrate 1 is cooled by: the cooling liquid or air flows into the gaps among the pin needles from one side of the pin needles and flows out from the other side of the pin needles, the baffle plates are arranged on two sides of the length direction of the substrate, and all the pin needles of the substrate are included by the baffle plates, so that the cooling of the radiating substrate is facilitated.
In a preferred embodiment, the surface of the chip part 3 of the power device is provided with a plating layer.
Specifically, the electroplated layer is made of silver or silver-containing alloy material, and silver is an excellent conductive material and has high conductivity, so that the electroplated layer can improve the conductivity of the power device, reduce resistance, improve current transmission efficiency, improve the heat dissipation capacity of the power device, effectively reduce the chip temperature, improve the stability and reliability of the device, and has good oxidation resistance and corrosion resistance, the electroplated layer can protect the metal material of the chip connecting part 3 from environmental factors such as oxidation and corrosion, and prolong the service life of the device.
In a preferred embodiment, the heat dissipation device further comprises a plastic housing 6, wherein the plastic housing 6 is located above the pin fin heat dissipation substrate 1, and sealant is arranged between the plastic housing 6 and the pin fin heat dissipation substrate 1.
Specifically, the plastic shell 6 is made of PBT (polybutylene terephthalate) \PPS (polyphenylene sulfide), nylon and plastic with good high temperature resistance and insulating property, and the sealant can effectively close the gap between the plastic shell 6 and the pin fin heat dissipation substrate 1, prevent external substances such as dust and impurities from entering, and protect the internal structure and elements of the pin fin heat dissipation substrate 1; the sealant has certain waterproof performance, can effectively prevent moisture from penetrating into the gap between the plastic shell 6 and the pin fin heat dissipation substrate 1, and avoids the corrosion and damage of the moisture to the circuit board and the elements.
Further specifically, the sealant is filled in the gap between the plastic housing 6 and the pin fin heat dissipation substrate 1, so that uneven surfaces can be filled, the contact area is increased, the heat dissipation effect is improved, heat generated by the pin fin heat dissipation substrate 1 is facilitated to be quickly conducted to the plastic housing 6, and the overall heat dissipation efficiency is improved.
Still more specifically, the sealant can fill the gap between the plastic housing 6 and the pin fin heat dissipation substrate 1, increase the stability of the structure, reduce the influence of vibration and impact on the pin fin heat dissipation substrate 1, and improve the reliability and stability of the device.
In a preferred embodiment, as shown in fig. 1, 3 and 6, screw holes 8 for mounting are provided at both ends of the pin fin heat dissipation substrate 1.
Specifically, the heat dissipating substrate can be easily mounted on other devices or structures, and can be firmly fixed at a desired position using screws through the screw holes 8.
In a preferred embodiment, the insulating substrate 2 comprises,
A first conductive layer;
An intermediate insulating layer located below the first conductive layer;
and the second conductive layer is positioned below the middle insulating layer.
Specifically, the first conductive layer and the second conductive layer are made of pure copper or copper alloy, have good conductive performance, can effectively conduct current, and the middle insulating layer made of ceramic has higher strength and durability, can provide good mechanical support and protection effect, and prevent short circuit or damage between the conductive layers.
Further specifically, the intermediate insulating layer has good insulating properties, and can effectively isolate the first conductive layer from the second conductive layer, preventing current leakage or interference.
Still more particularly, since the first conductive layer and the second conductive layer are both made of copper or copper alloy, the heat dissipation device has good heat conduction performance, can effectively dissipate heat, can maintain the stability and reliability of a circuit, and can provide good signal transmission and anti-interference capability.
Referring to fig. 1 and 2, a circuit of a three-level power module having a pin fin heat dissipation substrate 1 includes:
A power input positive terminal bus+ and a power input negative terminal BUS-;
The first insulated gate bipolar transistor Q1, the collector of the first insulated gate bipolar transistor Q1 connects the positive terminal BUS+ of power input;
The second insulated gate bipolar transistor Q2, the collector of the second insulated gate bipolar transistor Q2 connects the emitter of the first insulated gate bipolar transistor Q1, the emitter of the second insulated gate bipolar transistor Q2 connects a power output end OUT1;
a third insulated gate bipolar transistor Q3, the collector of the third insulated gate bipolar transistor Q3 being connected to the power output terminal OUT1;
a fourth insulated gate bipolar transistor Q4, wherein the collector of the fourth insulated gate bipolar transistor Q4 is connected with the emitter of the third insulated gate bipolar transistor Q3, and the emitter of the fourth insulated gate bipolar transistor Q4 is connected with the power input negative terminal BUS-;
The cathode of the first diode D1 is connected with the collector of the first insulated gate bipolar transistor Q1, and the anode of the first diode D1 is connected with the emitter of the first insulated gate bipolar transistor Q1;
the cathode of the second diode D2 is connected with the collector of the second insulated gate bipolar transistor Q2, and the anode of the second diode D2 is connected with the emitter of the second insulated gate bipolar transistor Q2;
a third diode D3, a cathode of the third diode D3 is connected to a collector of the third insulated gate bipolar transistor Q3, and an anode of the third diode D3 is connected to an emitter of the third insulated gate bipolar transistor Q3;
a cathode of the fourth diode D4 is connected to a collector of the fourth insulated gate bipolar transistor Q4, and an anode of the fourth diode D4 is connected to an emitter of the fourth insulated gate bipolar transistor Q4;
A first signal terminal TP1 provided between the emitter of the first insulated gate bipolar transistor Q1 and the collector of the second insulated gate bipolar transistor Q2;
A second signal terminal TP2 provided between the emitter of the third insulated gate bipolar transistor Q3 and the collector of the fourth insulated gate bipolar transistor Q4;
A fifth diode D5, an anode of the fifth diode D5 is connected to the first zero BUSN1, and a cathode of the fifth diode D5 is connected to the first signal terminal TP1;
A sixth diode D6, a cathode of the sixth diode D6 is connected to the second zero BUSN2, and an anode of the sixth diode D6 is connected to the second signal terminal TP2;
The thermistor RT comprises a first connecting end T1 and a second connecting end T2.
In summary, the utility model provides a three-level power module with a pin fin heat dissipation substrate, which is mainly used for module heat dissipation, has a simple and reliable structure, is beneficial to reducing the thermal resistance and the chip junction temperature of the power module, realizes the electrical connection between the chip parts of an insulated gate bipolar transistor and a diode and the upper copper material layer of an insulated substrate 2 through vacuum reflow soldering, and is beneficial to improving the capability of the chip parts of the insulated gate bipolar transistor and the diode against transient thermal shock and reducing the fluctuation of the chip junction temperature because the heat capacity of the copper material is generally larger; the method of directly welding the insulating substrate 2 on the heat dissipation pinfin substrate realizes the effective integration of the power module and the heat dissipation substrate, the pin needle design enables cooling liquid or air to circularly flow between gaps to take away heat, the contact area of the cooling liquid or air and the substrate is greatly increased, the heat dissipation structure is more efficient than the traditional heat conduction silicone grease heat dissipation mode, and the heat dissipation structure is greatly helpful for the three-level power module to face long-term high-temperature and dry environmental challenges in severe photovoltaic application scenes.
The foregoing description is only illustrative of the preferred embodiments of the present utility model and is not to be construed as limiting the scope of the utility model, and it will be appreciated by those skilled in the art that equivalent substitutions and obvious variations may be made using the description and illustrations of the present utility model, and are intended to be included within the scope of the present utility model.
Claims (10)
1. A three-level power module with a pin fin heat dissipation substrate is characterized by comprising,
A pin fin heat dissipation substrate (1), wherein a plurality of heat dissipation pin fins (9) are arranged on a first surface of the pin fin heat dissipation substrate (1), and an insulating substrate (2) is arranged on a second surface, opposite to the first surface, of the pin fin heat dissipation substrate (1);
The power device is characterized in that a chip part (3) of the power device and a signal terminal (5) are arranged on the insulating substrate (2), the chip parts (3) of the power device are connected through metal lead wires (7) in a bonding mode, and silica gel (4) is respectively coated on the insulating substrate (2), the chip part (3) of the power device, the signal terminal (5) and the metal lead wires (7).
2. The three-level power module with pin fin heat dissipation substrate according to claim 1, characterized in that solder is provided between the chip portion (3) of the power device and the insulating substrate (2);
The solder is arranged between the insulating substrate (2) and the pin fin heat dissipation substrate (1).
3. The three-level power module with pin fin heat sink substrate according to claim 1, wherein the chip portion (3) of the power device is a chip portion of an insulated gate bipolar transistor and a diode.
4. The three-level power module with pin fin heat dissipation substrate according to claim 1, characterized in that the height of the heat dissipation pin fins (9) is 5-25 mm, and the gap between the heat dissipation pin fins (9) is 1-10 mm.
5. The three-level power module with pin fin heat dissipation substrate according to claim 1, wherein the number of heat dissipation pin fins (9) is 20-100, and the shape of the heat dissipation pin fins (9) is circular or elliptical.
6. Three-level power module with pin fin heat sink substrate according to claim 1, characterized in that two baffles are provided along both sides of the length direction of the pin fin heat sink substrate (1), both baffles including all the heat sink pin fins (9).
7. The three-level power module with the pin fin heat dissipation substrate according to claim 1, wherein a plating layer is provided on a surface of a chip portion (3) of the power device.
8. The three-level power module with the pin fin heat dissipation substrate according to claim 1, further comprising a plastic housing (6), wherein the plastic housing (6) is located above the pin fin heat dissipation substrate (1), and a sealant is disposed between the plastic housing (6) and the pin fin heat dissipation substrate (1).
9. The three-level power module with the pin fin heat dissipation substrate according to claim 1, wherein screw holes (8) for installation are arranged at two ends of the pin fin heat dissipation substrate (1).
10. Three-level power module with pin fin heat sink substrate according to claim 1, characterized in that the insulating substrate (2) comprises,
A first conductive layer;
an intermediate insulating layer located below the first conductive layer;
And the second conductive layer is positioned below the middle insulating layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202323521565.8U CN221486489U (en) | 2023-12-22 | 2023-12-22 | Three-level power module with pin fin heat dissipation substrate |
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| CN202323521565.8U CN221486489U (en) | 2023-12-22 | 2023-12-22 | Three-level power module with pin fin heat dissipation substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN119725098A (en) * | 2024-11-27 | 2025-03-28 | 长飞先进半导体(武汉)有限公司 | Manufacturing method of power module heat dissipation structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119725098A (en) * | 2024-11-27 | 2025-03-28 | 长飞先进半导体(武汉)有限公司 | Manufacturing method of power module heat dissipation structure |
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