CN221427722U - Encapsulation frame of silicon carbide diode - Google Patents
Encapsulation frame of silicon carbide diode Download PDFInfo
- Publication number
- CN221427722U CN221427722U CN202322782305.XU CN202322782305U CN221427722U CN 221427722 U CN221427722 U CN 221427722U CN 202322782305 U CN202322782305 U CN 202322782305U CN 221427722 U CN221427722 U CN 221427722U
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- lower substrate
- heat dissipation
- substrate
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model provides a packaging frame of a silicon carbide diode, and relates to the technical field of diode packaging. The package frame of the silicon carbide diode includes: the upper surface of the silicon carbide module is connected with a copper metal layer; the upper substrate is welded and connected with the upper surface of the copper metal layer; the lower substrate is welded and connected with the lower surface of the silicon carbide module; the two heat dissipation mechanisms are respectively connected with the upper surface of the upper substrate and the lower surface of the lower substrate; the heat dissipation mechanism comprises a heat dissipation plate, wherein the heat dissipation plate is connected with the lower surface of the lower substrate or the upper surface of the copper metal layer, and a plurality of uniformly distributed heat dissipation fins are integrally formed on the outer surface of the heat dissipation plate. The packaging frame of the silicon carbide diode provided by the utility model has the advantage of improving the high-temperature operation reliability.
Description
Technical Field
The utility model relates to the technical field of diode packaging, in particular to a packaging frame of a silicon carbide diode.
Background
The silicon carbide device has the characteristics of high frequency, high voltage, high temperature resistance, high switching speed, low loss and the like, so that the efficiency and the power density of the power electronic system are advanced towards higher directions; these superior characteristics of silicon carbide devices require efficient, highly reliable connection of power and signals through packaging and circuitry to be perfectly demonstrated.
At present, when the silicon carbide diode is packaged, a packaging mode of combining a flexible PCB board with a silver sintering process is generally adopted, and the heat resistance of the flexible PCB is poor, so that the reliability of the flexible PCB board with the silver sintering process in high-temperature operation is affected.
Accordingly, there is a need to provide a new silicon carbide diode package frame that addresses the above-described problems.
Disclosure of utility model
In order to solve the technical problems, the utility model provides a packaging frame of a silicon carbide diode, which improves the high-temperature operation reliability.
The utility model provides a packaging frame of a silicon carbide diode, which comprises: the upper surface of the silicon carbide module is provided with a copper metal layer; the upper substrate is fixedly connected with the upper surface of the copper metal layer; the lower substrate is fixedly connected with the lower surface of the silicon carbide module; the two heat dissipation mechanisms are respectively connected with the upper surface of the upper substrate and the lower surface of the lower substrate; the heat dissipation mechanism comprises a heat dissipation plate, wherein the heat dissipation plate is connected with the lower surface of the lower substrate or the upper surface of the copper metal layer, and a plurality of uniformly distributed heat dissipation fins are integrally formed on the outer surface of the heat dissipation plate.
Preferably, the plurality of radiating fins are provided with micro-channels, and each micro-channel is internally filled with radiating liquid.
Preferably, the heat dissipation liquid is a fluorinated liquid.
Preferably, the copper metal layer is connected with the upper surface of the silicon carbide module by electroplating or sputtering.
Preferably, the lower substrate comprises a first lower substrate, a second lower substrate is arranged below the first lower substrate, the first lower substrate and the second lower substrate are connected through silver sintering superposition, and an intermediate layer of the first lower substrate and the second lower substrate is connected with an external bus.
Preferably, the upper surface of the first lower substrate is fixedly connected with a plurality of ceramic positioning seats for positioning the silicon carbide module, and corners of the upper surface of the ceramic positioning seats are provided with fillets.
Preferably, a through groove is formed in the heat dissipation plate connected with the upper substrate, a ceramic chip capacitor is welded on the upper surface of the upper substrate, and the ceramic chip capacitor is located in the through groove.
Compared with the related art, the packaging frame of the silicon carbide diode provided by the utility model has the following structure
The beneficial effects are that:
1. When the silicon carbide diode is used, the heat dissipation plate is attached to the lower surface of the lower substrate or the upper surface of the copper metal layer, so that double-sided heat dissipation packaging of the silicon carbide module is realized, interlayer thermal stress of the whole silicon carbide diode at high temperature is reduced, and the reliability of high-temperature operation of the silicon carbide module is improved.
2. The plurality of radiating fins and the radiating plate are integrally formed, so that heat is transferred between the radiating fins and the radiating plate, and the plurality of radiating fins can increase the effective radiating area, thereby improving the radiating effect;
3. According to the utility model, the first lower substrate and the second lower substrate are connected in a superposition manner, and the intermediate layers of the first lower substrate and the second lower substrate are connected to the bus intermediate voltage, so that the field intensity of the edge of the lower substrate can be reduced, and the parasitic capacitance of the middle point of the bridge arm to the ground can be reduced.
Drawings
FIG. 1 is a schematic diagram of a package frame for a silicon carbide diode according to a preferred embodiment of the present utility model;
FIG. 2 is a schematic diagram of a connection structure of a copper metal layer in the silicon carbide diode shown in FIG. 1;
FIG. 3 is a schematic structural diagram of the heat dissipation mechanism shown in FIG. 1;
fig. 4 is a schematic structural view of the lower substrate shown in fig. 1.
Reference numerals in the drawings: 1. a ceramic chip capacitor; 2. a heat dissipation mechanism; 21. a heat dissipation plate; 22. a heat radiation fin; 23. a microchannel; 3. an upper substrate; 4. a silicon carbide module; 5. a lower substrate; 51. a ceramic positioning seat; 52. a first lower substrate; 53. a second lower substrate; 6. copper metal layer.
Detailed Description
The utility model will be further described with reference to the drawings and embodiments.
Referring to fig. 1 to 4, a package frame of a silicon carbide diode includes: the upper surface of the silicon carbide module 4 is connected with a copper metal layer 6; an upper substrate 3, wherein the upper substrate 3 is welded and connected with the upper surface of the copper metal layer 6; a lower substrate 5, wherein the lower substrate 5 is welded and connected with the lower surface of the silicon carbide module 4; the number of the heat dissipation mechanisms 2 is two, and the two heat dissipation mechanisms 2 are respectively connected with the upper surface of the upper substrate 3 and the lower surface of the lower substrate 5.
It is necessary to explain that: the upper surface of the silicon carbide module 4 can be welded with the upper substrate 3 through the copper metal layer 6, and then the heat dissipation mechanisms 2 are arranged on the upper substrate 3 and the lower substrate 5, so that the double-sided heat dissipation package of the silicon carbide module 4 is realized
It also needs to be stated that: the upper substrate 3 and the lower substrate 5 are both DBC boards.
Referring to fig. 1 and 3, the heat dissipation mechanism 2 includes a heat dissipation plate 21, the heat dissipation plate 21 is connected to the lower surface of the lower substrate 5 or the upper surface of the copper metal layer 6, and a plurality of heat dissipation fins 22 are integrally formed on the outer surface of the heat dissipation plate 21.
It is necessary to explain that: the heat dissipation plate 21 is attached to the lower surface of the lower substrate 5 or the upper surface of the copper metal layer 6, so that good heat exchange between the heat dissipation plate and the lower surface of the lower substrate 5 or the upper surface of the copper metal layer 6 is ensured, double-sided heat dissipation packaging of the silicon carbide module 4 is facilitated, interlayer thermal stress of the whole silicon carbide diode at high temperature is reduced, and further reliability of high-temperature operation of the silicon carbide module 4 is improved.
It also needs to be stated that: the plurality of radiating fins 22 and the radiating plate 21 are integrally formed, so that heat is transferred between the radiating fins 22 and the radiating plate 21, and the plurality of radiating fins 22 can increase the effective radiating area, thereby improving the radiating effect.
Referring to fig. 3, a plurality of heat dissipation fins 22 are each provided with a micro-channel 23, and each micro-channel 23 is filled with heat dissipation liquid; the heat dissipation liquid is fluoridized liquid.
It is necessary to explain that: the heat dissipation liquid exchanges heat with the heat dissipation fins 22, which is further beneficial to heat dissipation of the heat dissipation fins 22, so that the double-sided heat dissipation effect of the silicon carbide module 4 is improved, and the reliability of high-temperature operation of the silicon carbide module 4 is further improved.
Referring to fig. 2, the copper metal layer 6 is connected to the upper surface of the silicon carbide module 4 by electroplating or sputtering.
It is necessary to explain that: the connection between the copper metal layer 6 and the upper surface of the silicon carbide module 4 will be described, and the copper metal layer 6 has low resistivity, reducing the resistance of the package.
Referring to fig. 1 and 4, the lower substrate 5 includes a first lower substrate 52, a second lower substrate 53 is disposed below the first lower substrate 52, the first lower substrate 52 and the second lower substrate 53 are connected by silver sintering and superposition, and an intermediate layer of the first lower substrate 52 and the second lower substrate 53 is connected with an external bus.
It is necessary to explain that: because the first lower substrate 52 and the second lower substrate 53 are connected in a superposition way, and the middle layers of the first lower substrate 52 and the second lower substrate 53 are connected with the external bus, the field intensity of the edge of the lower substrate 5 can be reduced, and meanwhile, the parasitic capacitance of the middle point of the bridge arm to the ground can be reduced;
It also needs to be stated that: by implementing the lamination connection of the first lower substrate 52 and the second lower substrate 53 by means of silver sintering, the resistivity of silver is also low, further reducing the resistance of the package.
Referring to fig. 4, the upper surface of the first lower substrate 52 is fixedly connected with a plurality of ceramic positioning seats 51 for positioning the silicon carbide module 4, and corners of the upper surface of the ceramic positioning seats 51 are provided with fillets.
It is necessary to explain that: the number of the ceramic positioning seats 51 is four, the four ceramic positioning seats 51 are respectively positioned at the front, the back, the left and the right of the silicon carbide module 4, the positioning of the silicon carbide module 4 is realized through the ceramic positioning seats 51, the matching degree of the installation of the silicon carbide module 4 and the first lower substrate 52 is improved, and the encapsulation of the device is facilitated; and the silicon carbide module 4 is facilitated to enter between the four ceramic positioning seats 51 by the fillets.
Referring to fig. 1 and 3, a through groove is formed in a heat dissipation plate 21 connected to the upper substrate 3, and a ceramic chip capacitor 1 is welded on the upper surface of the upper substrate 3, where the ceramic chip capacitor 1 is located in the through groove.
It is necessary to explain that: the parasitic inductance of the loop can be reduced through the ceramic chip capacitor 1, so that the stray inductance in the whole device is reduced.
The working principle of the encapsulation frame of the silicon carbide diode provided by the utility model is as follows:
The upper surface of the silicon carbide module 4 can be welded with the upper substrate 3 through the copper metal layer 6, and then the heat dissipation mechanisms 2 are arranged on the upper substrate 3 and the lower substrate 5, so that double-sided heat dissipation packaging of the silicon carbide module 4 is realized; the heat dissipation plate 21 is attached to the lower surface of the lower substrate 5 or the upper surface of the copper metal layer 6, so that good heat exchange between the heat dissipation plate and the lower surface of the lower substrate 5 or the upper surface of the copper metal layer 6 is ensured, double-sided heat dissipation packaging of the silicon carbide module 4 is facilitated, interlayer thermal stress of the whole silicon carbide diode at high temperature is reduced, and the reliability of high-temperature operation of the silicon carbide module 4 is improved;
In the utility model, as the first lower substrate 52 and the second lower substrate 53 are connected in a superposition way, and the intermediate layers of the first lower substrate 52 and the second lower substrate 53 are connected to the bus intermediate voltage, the field intensity of the edge of the lower substrate 5 can be reduced, and the parasitic capacitance of the bridge arm midpoint to the ground can be reduced; and by adopting a silver sintering mode to realize the superposition connection of the first lower substrate 52 and the second lower substrate 53, the resistivity of silver is also low, and the resistance of the package is further reduced.
The foregoing description is only illustrative of the present utility model and is not intended to limit the scope of the utility model, and all equivalent structures or equivalent processes or direct or indirect application in other related technical fields are included in the scope of the present utility model.
Claims (7)
1. A silicon carbide diode package frame, comprising:
the silicon carbide module (4), the upper surface of the silicon carbide module (4) is provided with a copper metal layer (6);
an upper substrate (3), wherein the upper substrate (3) is fixedly connected with the upper surface of the copper metal layer (6);
The lower substrate (5) is fixedly connected with the lower surface of the silicon carbide module (4);
The heat dissipation mechanisms (2) are two in number, and the two heat dissipation mechanisms (2) are respectively connected with the upper surface of the upper substrate (3) and the lower surface of the lower substrate (5); the heat dissipation mechanism (2) comprises a heat dissipation plate (21), wherein the heat dissipation plate (21) is connected with the lower surface of the lower substrate (5) or the upper surface of the copper metal layer (6), and a plurality of uniformly distributed heat dissipation fins (22) are integrally formed on the outer surface of the heat dissipation plate (21).
2. The silicon carbide diode package frame of claim 1, wherein a plurality of heat dissipating fins (22) each have a microchannel (23) formed therein, each microchannel (23) having a heat dissipating fluid injected therein.
3. The silicon carbide diode package frame of claim 2, wherein the heat sink is a fluorinated liquid.
4. The packaging frame of a silicon carbide diode according to claim 1, characterized in that the copper metal layer (6) is connected to the upper surface of the silicon carbide module (4) by means of electroplating or sputtering.
5. The packaging frame of a silicon carbide diode according to any one of claims 1-4, wherein the lower substrate (5) comprises a first lower substrate (52), a second lower substrate (53) is arranged below the first lower substrate (52), the first lower substrate (52) and the second lower substrate (53) are connected by silver sintering lamination, and an intermediate layer connection of the first lower substrate (52) and the second lower substrate (53) is connected with an external bus bar.
6. The silicon carbide diode packaging frame according to claim 5, wherein the upper surface of the first lower substrate (52) is fixedly connected with a plurality of ceramic positioning seats (51) for positioning the silicon carbide module (4), and corners of the upper surface of the ceramic positioning seats (51) are provided with fillets.
7. The silicon carbide diode packaging frame according to claim 6, wherein a through groove is formed in a heat dissipation plate (21) connected with the upper substrate (3), and a ceramic chip capacitor (1) is welded on the upper surface of the upper substrate (3), and the ceramic chip capacitor (1) is located in the through groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322782305.XU CN221427722U (en) | 2023-10-17 | 2023-10-17 | Encapsulation frame of silicon carbide diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322782305.XU CN221427722U (en) | 2023-10-17 | 2023-10-17 | Encapsulation frame of silicon carbide diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN221427722U true CN221427722U (en) | 2024-07-26 |
Family
ID=92009270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322782305.XU Active CN221427722U (en) | 2023-10-17 | 2023-10-17 | Encapsulation frame of silicon carbide diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN221427722U (en) |
-
2023
- 2023-10-17 CN CN202322782305.XU patent/CN221427722U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11251106B2 (en) | Packaging structure of a SiC MOSFET power module and manufacturing method thereof | |
| US7274105B2 (en) | Thermal conductive electronics substrate and assembly | |
| CN105590930B (en) | A kind of used in new energy vehicles IGBT power module | |
| CN111554645B (en) | Double-sided water-cooling SiC half-bridge module packaging structure integrated with laminated busbar | |
| CN104486901A (en) | Heat-radiating insulating lining board, packaging module comprising lining board and manufacturing method thereof | |
| CN205595329U (en) | Automobile -used IGBT power module of new forms of energy | |
| US20250311175A1 (en) | Metal substrate heat dissipation structure and photovoltaic power optimizer | |
| CN119725259A (en) | A three-dimensional packaged double-sided heat dissipation power module | |
| TWI446462B (en) | Power module | |
| CN114267649A (en) | Double-sided heat dissipation SiC half-bridge module packaging structure with extremely low parasitic inductance | |
| CN120565532B (en) | Silicon carbide power module with low noise and double-sided heat dissipation | |
| Sun et al. | A novel substrate-embedded SiC power module with integrated liquid cooling | |
| CN209787545U (en) | Printed circuit board | |
| CN215420956U (en) | Gallium nitride half-bridge module | |
| CN221427722U (en) | Encapsulation frame of silicon carbide diode | |
| CN208368501U (en) | IGBT module encapsulating structure and cooling system | |
| CN117790462B (en) | A laminated ceramic substrate structure and power module for improving ceramic substrate utilization | |
| CN111354692A (en) | Power cooling device | |
| CN218351452U (en) | Packaging and stacking structure of power module | |
| CN114709203B (en) | A single-phase full-bridge intelligent power module based on gallium nitride power chips | |
| CN222653962U (en) | Power module and power device | |
| US20230108943A1 (en) | Power conversion apparatus | |
| CN116156752A (en) | A high current density vertical power supply and distribution module and its packaging process | |
| CN219204353U (en) | Power module and electronic equipment | |
| CN119997471B (en) | High-power-density hybrid potting SIC module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |