CN219738972U - Radiating structure of photovoltaic bypass diode - Google Patents
Radiating structure of photovoltaic bypass diode Download PDFInfo
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- CN219738972U CN219738972U CN202321195386.7U CN202321195386U CN219738972U CN 219738972 U CN219738972 U CN 219738972U CN 202321195386 U CN202321195386 U CN 202321195386U CN 219738972 U CN219738972 U CN 219738972U
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- frame
- bypass diode
- heat dissipation
- chip
- copper
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052802 copper Inorganic materials 0.000 claims abstract description 41
- 239000010949 copper Substances 0.000 claims abstract description 41
- 230000017525 heat dissipation Effects 0.000 claims description 20
- 238000010586 diagram Methods 0.000 description 4
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a radiating structure of a photovoltaic bypass diode in the field of diodes, which comprises a first frame and a second frame, wherein the first frame and the second frame are connected through a copper jumper wire, and radiating fins are fixed at the bottom of the first frame.
Description
Technical Field
The utility model relates to the technical field of diodes, in particular to a bypass diode.
Background
The solar cell assembly is inevitably covered by the shielding objects in the long-term use process, the shielding objects form local shadows on the solar cell assembly, the solar cell assemblies in the serial branches under the local shadows are used as loads, and consume energy generated by other solar cell assemblies, so that local temperature rise is caused by heat generation, a hot spot effect is formed, welding spots on the solar cell assemblies are melted and grid lines are destroyed when the hot spot effect is serious, and in order to prevent the solar cell from being destroyed due to the hot spot effect, in practical operation, a bypass diode module is connected between the positive electrode and the negative electrode of the solar cell assembly in parallel, and at least one bypass diode is arranged in the module so as to prevent the energy generated by the illumination assembly from being consumed by the shielded assembly.
The prior art discloses a heat radiation structure of photovoltaic bypass diode, and its publication number is: CN 211828758U, including first frame and second frame, link to each other through copper jumper wire between first frame and the second frame, first frame one side middle part extends to second frame direction and forms the base island, second frame one side both sides extend to first frame direction and form a pair of binding post that sets up on the base island both sides, form unsmooth cooperation between base island and the binding post, base island front and back all are provided with the chip, link to each other through copper jumper wire between chip and the two binding posts. The disadvantage is that the heat dissipation performance is poor and the overcurrent capacity is weak.
Disclosure of Invention
Aiming at the defects in the prior art, the utility model provides a radiating structure of a photovoltaic bypass diode, which solves the problems of weak overcurrent capacity and poor radiating performance in the prior art.
The purpose of the utility model is realized in the following way: the utility model provides a heat radiation structure of photovoltaic bypass diode, includes first frame and second frame, link to each other through copper jumper wire between first frame and the second frame, the bottom of first frame is fixed with the fin.
As an preferable technical scheme of the heat dissipation structure of the photovoltaic bypass diode, a heat dissipation fin is also fixed at the bottom of the second frame.
As the preferable technical scheme of the radiating structure of the photovoltaic bypass diode, the radiating fin adopts a U-shaped structure.
As the preferable technical scheme of the radiating structure of the photovoltaic bypass diode, the middle part of one side of the first frame extends towards the direction of the second frame to form a base island, two sides of one side of the second frame extend towards the direction of the first frame to form a pair of wiring terminals arranged at two sides of the base island, the base island and the wiring terminals form concave-convex fit, a chip is arranged on the front surface of the base island, the chip is connected with the two wiring terminals through a copper jumper wire, the chip and the periphery of the copper jumper wire are wrapped with a plastic package shell, and the width of the copper jumper wire is larger than that of the chip.
As the preferable technical scheme of the radiating structure of the photovoltaic bypass diode, the copper jumper wires are respectively in a strip-shaped structure, two ends of the copper jumper wires are respectively connected to the wiring terminals, and the bottom surface of the middle part of the copper jumper wires is connected with the chip.
As the preferable technical scheme of the radiating structure of the photovoltaic bypass diode, the bottom surface of the middle part of the copper jumper wire is provided with the square boss which is abutted against the chip.
As the preferable technical scheme of the radiating structure of the photovoltaic bypass diode, through holes are formed in the boss.
As the preferable technical scheme of the heat dissipation structure of the photovoltaic bypass diode, the middle part of the copper jumper wire is higher than the two ends.
As the preferable technical scheme of the radiating structure of the photovoltaic bypass diode, stress holes are formed in positions, close to two ends, of the copper jumper wire.
As an optimal technical scheme of the radiating structure of the photovoltaic bypass diode, the first frame is provided with the V-shaped groove.
Compared with the prior art, the utility model has the beneficial effects that:
the utility model improves the overcurrent capacity of the diode and further improves the heat dissipation performance of the diode.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present utility model, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of the structure of the present utility model.
Fig. 2 is a schematic diagram of the internal structure of the present utility model.
Fig. 3 is an end view of the present utility model.
Fig. 4 is a schematic view of the first frame and the second frame of the present utility model.
Fig. 5 is a schematic diagram of a copper jumper structure according to the present utility model.
FIG. 6 is a schematic diagram of a copper jumper structure according to the second embodiment of the present utility model.
The semiconductor package comprises a first frame 100, a base island 101, a 102V-shaped groove 200, a second frame 201, a wiring terminal 201, a 300 chip 400 copper jumper wires 401, a square boss 401, a through hole 402, a stress hole 403, a 500 plastic package shell and a 600 radiating fin.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Example 1
The heat dissipation structure of the photovoltaic bypass diode shown in fig. 1-6 comprises a first frame 100 and a second frame 200, wherein the first frame 100 and the second frame 200 are connected through a copper jumper 400, the middle part of one side of the first frame 100 extends towards the direction of the second frame 200 to form a base island 101, two sides of one side of the second frame 200 extend towards the direction of the first frame 100 to form a pair of wiring terminals 201 arranged at two sides of the base island 101, concave-convex matching is formed between the base island 101 and the wiring terminals 201, a chip 300 is arranged on the front surface of the base island 101, the chip 300 is connected with the two wiring terminals 201 through the copper jumper 400, the chip 300 and the periphery of the copper jumper 400 are wrapped with a plastic package 500, the width of the copper jumper 400 is larger than that of the chip 300, a heat dissipation fin 600 is fixed at the bottom of the first frame 100, and the heat dissipation fin 600 is also fixed at the bottom of the second frame 200, and the heat dissipation fin 600 adopts a U-shaped structure.
Specifically, the copper jumper 400 is an integral strip structure, two ends of the copper jumper are respectively connected to the connecting terminals 201, the bottom surface of the middle part of the copper jumper is connected to the chip 300, the heat sink 600 comprises a horizontal part for fixing, and two sides of the horizontal part are provided with folded edges, so that a U-shaped structure is formed, and resistance welding can be adopted for fixing the heat sink 600 and the first frame 100 and the second frame 200.
It should be noted that, by lengthening the structure of the copper jumper 400, two ends of the copper jumper 400 are respectively connected to the two wiring terminals 201, so that the overcurrent capacity of the diode is enhanced, and meanwhile, the width of the copper jumper 400 is designed to be wider and larger than that of the chip 300, so that the overcurrent capacity is further enhanced, and meanwhile, the heat dissipation performance is improved; the design of the heat sink 600 further improves the heat dissipation performance of the present utility model by increasing the area.
Further, a square boss 401 is disposed on the bottom surface of the middle of the copper jumper 400, and the square boss 401 abuts against the chip 300.
Specifically, the square boss 401 is formed by punching, and the area of the square boss 401 is slightly smaller than that of the chip 300.
It should be noted that, the contact area between the copper jumper 400 and the chip 300 can be increased by this design, so as to further improve the overcurrent capability.
Further, the boss is formed with a through hole 402.
Specifically, the through hole 402 is formed through the center of the boss.
It should be noted that, when the boss contacts with the chip 300, the solder paste needs to be applied, so the design can make the excessive solder paste overflow from the through hole 402, so the adhesion force between the chip 300 and the boss is enhanced, meanwhile, the excessive solder paste cannot flow to the edge of the chip 300, and the reliability is improved.
Further, the copper jumper 400 is higher in the middle than at the two ends.
Specifically, the thicknesses of the copper jumpers 400 are equal, and the middle part is machined in a stamping mode to form a structure with high middle part and low two ends.
It should be noted that, the design of the two ends independent wiring is omitted by the structural design, the two ends can be directly fixed on the wiring terminal 201, meanwhile, the structural design is more reasonable due to the high middle and the reserved boss punching space.
Further, stress holes 403 are formed in the copper jumper 400 near the two ends.
Specifically, stress holes 403 are formed at the transition between the middle and both ends.
It should be noted that, the design of the stress hole 403 reduces the stress caused by thermal expansion and cold contraction, further protects the chip 300, and improves the reliability.
Further, the first frame 100 is provided with a V-shaped groove 102.
Specifically, the V-shaped groove 102 is formed in the plastic package 500, and two channels are formed therein.
It should be noted that, the V-shaped groove 102 is designed to enhance the adhesion between the plastic package 500 and the first frame 100, thereby further improving the reliability.
Example 2
This embodiment differs from embodiment 1 in that: the heat sink 600 is disposed only at the bottom of the first frame 100.
Example 3
This embodiment differs from embodiment 1 in that: the heat sink 600 is disposed only at the bottom of the second frame 200.
The above description of the embodiments is only for aiding in the understanding of the method of the present utility model and its core ideas. It should be noted that it will be apparent to those skilled in the art that various modifications and adaptations of the utility model can be made without departing from the principles of the utility model and these modifications and adaptations are intended to be within the scope of the utility model as defined in the following claims.
Claims (7)
1. The heat dissipation structure of the photovoltaic bypass diode comprises a first frame (100) and a second frame (200), wherein the first frame (100) and the second frame (200) are connected through a copper jumper wire (400), and the heat dissipation structure is characterized in that a heat dissipation sheet (600) is fixed at the bottom of the first frame (100);
a radiating fin (600) is also fixed at the bottom of the second frame (200);
the radiating fin (600) adopts a U-shaped structure;
the plastic package structure is characterized in that the middle of one side of the first frame (100) extends to the direction of the second frame (200) to form a base island (101), two sides of one side of the second frame (200) extend to the direction of the first frame (100) to form a pair of wiring terminals (201) arranged at two sides of the base island (101), concave-convex matching is formed between the base island (101) and the wiring terminals (201), a chip (300) is arranged on the front surface of the base island (101), the chip (300) is connected with the two wiring terminals (201) through a copper jumper wire (400), the periphery of the chip (300) and the copper jumper wire (400) is wrapped with a plastic package shell (500), and the width of the copper jumper wire (400) is larger than that of the chip (300).
2. The heat dissipation structure of a photovoltaic bypass diode according to claim 1, wherein the copper jumpers (400) are respectively in a strip-shaped structure, two ends of each copper jumper are respectively connected to the connecting terminals (201), and the bottom surface of the middle part of each copper jumper is connected with the chip (300).
3. The heat dissipation structure of a photovoltaic bypass diode according to claim 1, wherein a square boss (401) is disposed on a bottom surface of a middle portion of the copper jumper (400), and the square boss (401) is abutted against the chip (300).
4. A heat dissipation structure for a photovoltaic bypass diode according to claim 3, characterized in that the boss is formed with a through hole (402).
5. The heat dissipation structure of a photovoltaic bypass diode according to claim 1, wherein the copper jumper (400) is higher in the middle than at both ends.
6. The heat dissipation structure of a photovoltaic bypass diode according to claim 1, wherein stress holes (403) are formed in the copper jumper (400) near two ends.
7. The heat dissipation structure of a photovoltaic bypass diode according to claim 1, wherein the first frame (100) is provided with a V-shaped groove (102).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321195386.7U CN219738972U (en) | 2023-05-18 | 2023-05-18 | Radiating structure of photovoltaic bypass diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321195386.7U CN219738972U (en) | 2023-05-18 | 2023-05-18 | Radiating structure of photovoltaic bypass diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219738972U true CN219738972U (en) | 2023-09-22 |
Family
ID=88031030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321195386.7U Active CN219738972U (en) | 2023-05-18 | 2023-05-18 | Radiating structure of photovoltaic bypass diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219738972U (en) |
-
2023
- 2023-05-18 CN CN202321195386.7U patent/CN219738972U/en active Active
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