CN219351525U - Driving circuit and switching power supply - Google Patents

Driving circuit and switching power supply Download PDF

Info

Publication number
CN219351525U
CN219351525U CN202222870051.2U CN202222870051U CN219351525U CN 219351525 U CN219351525 U CN 219351525U CN 202222870051 U CN202222870051 U CN 202222870051U CN 219351525 U CN219351525 U CN 219351525U
Authority
CN
China
Prior art keywords
mos tube
circuit unit
driving signal
driving
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202222870051.2U
Other languages
Chinese (zh)
Inventor
陈海荣
郑典清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mornsun Guangzhou Science and Technology Ltd
Original Assignee
Mornsun Guangzhou Science and Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mornsun Guangzhou Science and Technology Ltd filed Critical Mornsun Guangzhou Science and Technology Ltd
Priority to CN202222870051.2U priority Critical patent/CN219351525U/en
Application granted granted Critical
Publication of CN219351525U publication Critical patent/CN219351525U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Electronic Switches (AREA)

Abstract

The utility model discloses a driving circuit, which is applied to a switching power supply and comprises: a control circuit unit, a driving circuit unit and a driving turn-off circuit unit; the first input end of the control circuit unit is used for being connected with the switching power supply sampling signal VS, the second input end is used for inputting the first power supply voltage Vcc1, the output end outputs a PWM driving signal Vgs1 generated according to the sampling signal VS, the PWM driving signal Vgs1 is used for being connected with the first input end of the driving circuit unit and the first input end of the driving turn-off circuit unit, the second input end of the driving circuit unit is used for inputting the second power supply voltage Vcc2, the output end outputs a PWM driving signal Vgs2 amplified by the PWM driving signal Vgs1 to the second input end of the driving turn-off circuit unit, and the output end of the driving turn-off circuit unit outputs a PWM driving signal Vgs3 generated according to the PWM driving signal Vgs2 and the PWM driving signal Vgs 1. The utility model can improve the turn-off speed of the driving signal under the condition of not influencing the normal driving action of the driving signal.

Description

Driving circuit and switching power supply
Technical Field
The utility model relates to a switching power supply, in particular to a driving circuit and a switching power supply.
Background
In a switching power supply, since a driving signal output by a control circuit is small, a driving circuit to which a driving signal of an amplifying control IC is applied is generally required to increase the rising edge and falling edge slopes of a driving voltage of a power switching device, but at the same time, the turn-off delay time of the driving signal is increased, so that the voltage or current stress of the power switching device is increased, and the power switching device is easily damaged due to overstress.
Disclosure of Invention
In view of the above, the present utility model provides a driving circuit to increase the turn-off speed of the driving signal without affecting the normal driving function of the driving signal.
As a first aspect, the present utility model provides a driving circuit according to the following technical scheme:
a driving circuit is applied to a switching power supply and comprises a control circuit unit, a driving circuit unit and a driving turn-off circuit unit; the first input end of the control circuit unit is used for connecting a switching power supply sampling signal VS, the second input end of the control circuit unit is used for inputting a first power supply voltage Vcc1, the output end of the control circuit unit outputs a PWM driving signal Vgs1 generated according to the sampling signal VS, the PWM driving signal Vgs1 is used for connecting the first input end of the driving circuit unit and the first input end of the driving turn-off circuit unit, the second input end of the driving circuit unit is used for inputting a second power supply voltage Vcc2, the output end of the driving circuit unit outputs a PWM driving signal Vgs2 amplified by the PWM driving signal Vgs1 to the second input end of the driving turn-off circuit unit, and the output end of the driving turn-off circuit unit outputs a PWM driving signal Vgs3 generated according to the PWM driving signal Vgs2 and the PWM driving signal Vgs 1; when the driving signal Vgs1 is at a low level, the driving signal Vgs2 is pulled down by the driving turn-off circuit unit, and the driving signal Vgs3 is output at a low level.
Further, the drive turn-off circuit unit comprises a current limiter, a MOS tube Q1, a MOS tube Q2 and a MOS tube Q3; one end of the current limiter is connected with the driving signal Vgs2, the other end of the current limiter is connected with the drain electrode of the MOS tube Q3 and is used for outputting the driving signal Vgs3, the source electrode of the MOS tube Q1 is used for inputting the first power supply voltage Vcc1, the grid electrode of the MOS tube Q2 is connected with the driving signal Vgs1, the drain electrode of the MOS tube Q2 is connected with the drain electrode of the MOS tube Q3, and the source electrode of the MOS tube Q2 is connected with the source electrode of the MOS tube Q3 and is used for grounding; the MOS tube Q1 is a P-channel type MOS tube, the MOS tube Q2 is an N-channel type MOS tube, and the MOS tube Q3 is an N-channel type MOS tube.
Further, the current limiter is a resistor R1.
Further, the driving turn-off circuit unit comprises a current limiter, a MOS tube Q1, a MOS tube Q2, a MOS tube Q3, a diode D1 and a switch tube Q4; the source electrode of the MOS tube Q1 is used for inputting a first power supply voltage Vcc1, the grid electrode is connected with the grid electrode of the MOS tube Q2 and the driving signal Vgs1, the drain electrode is connected with the drain electrode of the MOS tube Q2 and the grid electrode of the MOS tube Q3, the source electrode of the MOS tube Q2 is connected with the source electrode of the MOS tube Q3 for grounding, one end of the current limiter is connected with the driving signal Vgs2, the other end of the current limiter is connected with the source electrode of the MOS tube Q3, the anode of the diode D1 and the control end of the switching tube Q4, one end of the switching tube Q4 is connected with the cathode of the diode D1 for outputting the driving signal Vgs3, and the other end of the switching tube Q4 is connected with the ground; the MOS tube Q1 is a P-channel type MOS tube, the MOS tube Q2 is an N-channel type MOS tube, and the MOS tube Q3 is an N-channel type MOS tube.
Further, the switching tube Q4 is a PNP transistor, the base of the PNP transistor is the control end of the switching tube Q4, the emitter is one end of the switching tube Q4, and the collector is the other end of the switching tube Q4.
Further, the current limiter is a resistor R1.
A driving circuit is applied to a switching power supply and comprises a control circuit unit, a driving circuit unit, a resistor R1, a MOS tube Q2 and a MOS tube Q3; the first input end of the control circuit unit is used for being connected with a switching power supply sampling signal VS, the second input end of the control circuit unit is used for inputting a first power supply voltage Vcc1, the output end of the control circuit unit outputs a PWM driving signal Vgs1 generated according to the sampling signal VS, the driving signal Vgs1 is used for being connected with the first input end of the driving circuit unit, the grid electrode of the MOS tube Q1 and the grid electrode of the MOS tube Q2, the second input end of the driving circuit unit is used for inputting a second power supply voltage Vcc2, the output end of the driving circuit unit outputs the PWM driving signal Vgs2 to amplify the driving signal Vgs1 and is used for being connected with one end of the resistor R1, the other end of the resistor R1 outputs a PWM driving signal Vgs3 to prevent overvoltage damage of the control circuit device, the source electrode of the MOS tube Q1 is used for inputting the first power supply voltage Vcc1, the drain electrode of the MOS tube Q2 is connected with the grid electrode of the MOS tube Q3, and the source electrode of the MOS tube Q3 is connected with the source electrode of the MOS tube Q2 is used for being grounded, and the drain electrode of the MOS tube Q2 is connected with the other end of the resistor R1; the MOS tube Q1 is a P-channel type MOS tube, the MOS tube Q2 is an N-channel type MOS tube, and the MOS tube Q3 is an N-channel type MOS tube.
A driving circuit is applied to a switching power supply and comprises a control circuit unit, a driving circuit unit, a resistor R1, a MOS tube Q2, a MOS tube Q3, a diode D1 and a triode Q4; the first input end of the control circuit unit is used for being connected with a switching power supply sampling signal VS, the second input end of the control circuit unit is used for inputting a first power supply voltage Vcc1, the output end of the control circuit unit outputs a PWM driving signal Vgs1 generated according to the sampling signal VS, the driving signal Vgs1 is used for being connected with the first input end of the driving circuit unit, the grid electrode of the MOS transistor Q1 and the grid electrode of the MOS transistor Q2, the second input end of the control circuit unit is used for inputting a second power supply voltage Vcc2, the output end of the control circuit unit outputs the PWM driving signal Vgs2 to amplify the driving signal Vgs1, the control circuit unit is used for being connected with one end of the resistor R1, the source electrode of the MOS transistor Q1 is used for inputting the first power supply voltage Vcc1, the drain electrode of the MOS transistor Q2 is connected with the grid electrode of the MOS transistor Q3, the source electrode of the MOS transistor Q3 is connected with the other end of the resistor R1, the anode of the transistor D1 and the base electrode of the transistor Q4 are connected with the drain electrode of the MOS transistor Q3, and the drain electrode of the transistor Q4 is connected with the drain electrode of the PWM signal D3 is connected with the drain electrode of the transistor Q1; the MOS tube Q1 is a P-channel type MOS tube, the MOS tube Q2 is an N-channel type MOS tube, the MOS tube Q3 is an N-channel type MOS tube, and the triode is a PNP type triode.
As a second aspect, the present utility model provides a driving circuit according to the following technical scheme:
a switching power supply comprising the drive circuit of any one of the above first aspects.
The working principle of the application will be described in connection with specific embodiments, and details are not described here, and compared with the prior art, the novel implementation has the following beneficial effects:
1. when the driving signal output by the control circuit unit is at a low level, the power switch device of the driving turn-off circuit unit is utilized to rapidly pull down the driving signal of the output end, so that the turn-off delay time of the driving signal is reduced, the voltage stress and the current stress of the power switch device are reduced, and the problem that the power switch device in the circuit is damaged due to the increase of the voltage or the current stress can be effectively avoided;
2. when the driving signal output by the control circuit unit is at a high level, the driving turn-off circuit unit does not participate in the driving process of the driving signal, so that the turn-off speed of the driving signal can be improved under the condition that the normal driving action of the driving signal is not influenced;
3. the utility model utilizes the current limiter to reasonably step down the driving signal so as to avoid the damage of the power switch tube of the drive turn-off circuit unit caused by overlarge flowing current when the driving signal output by the control circuit unit is in a low level;
4. the drive turn-off circuit has the advantages of simple structure, fewer elements, low cost and easy realization.
Drawings
FIG. 1 is a functional block diagram of a driving circuit of the present utility model applied to a switching power supply;
FIG. 2 is a schematic diagram of a first embodiment of a specific drive shutdown circuit unit provided on the basis of FIG. 1;
fig. 3 is a schematic diagram of a second embodiment of a specific drive shut down circuit unit provided on the basis of fig. 1.
Detailed Description
The present utility model will be further described in detail with reference to the drawings and examples of the specification, in order to make the objects, technical solutions and advantages of the present utility model more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the utility model.
Fig. 1 is a functional block diagram of a driving circuit applied to a switching power supply according to the present utility model, the driving circuit including a control circuit unit, a driving circuit unit, and a driving shutdown circuit unit; the first input end of the control circuit unit is used for connecting a switching power supply sampling signal VS, the second input end is used for inputting a first power supply voltage Vcc1, the output end outputs a PWM driving signal Vgs1 generated according to the sampling signal VS, the PWM driving signal Vgs1 is used for connecting the first input end of the driving circuit unit and the first input end of the driving turn-off circuit unit, the second input end of the driving circuit unit is used for inputting a second power supply voltage Vcc2, the output end outputs a PWM driving signal Vgs2 amplified by the PWM driving signal Vgs1 to the second input end of the driving turn-off circuit unit, and the output end of the driving turn-off circuit unit outputs a PWM driving signal Vgs3 generated according to the PWM driving signal Vgs2 and the PWM driving signal Vgs 1; when the driving signal Vgs1 is at a low level, the driving signal Vgs2 is pulled down by the driving turn-off circuit unit, and the driving signal Vgs3 is outputted at a low level.
First embodiment
Fig. 2 is a schematic diagram of a first embodiment of a specific driving turn-off circuit unit provided on the basis of fig. 1, where the driving turn-off circuit unit includes a current limiting resistor R1, a P-channel MOS transistor Q1, an N-channel MOS transistor Q2, and an N-channel MOS transistor Q3; one end of the current limiting resistor R1 is connected with a driving signal Vgs2, the other end of the current limiting resistor R is connected with a drain electrode of the MOS tube Q3 for outputting the driving signal Vgs3, a source electrode of the MOS tube Q1 is used for inputting a first power supply voltage Vcc1, a gate electrode of the MOS tube Q2 is connected with the driving signal Vgs1, a drain electrode of the MOS tube Q2 is connected with a drain electrode of the MOS tube Q3, and a source electrode of the MOS tube Q2 is connected with a source electrode of the MOS tube Q3 for grounding.
The working principle of the circuit of fig. 2 is as follows:
when the driving signal Vgs1 output by the control circuit unit is at a low level, the MOS tube Q1 is turned on, the MOS tube Q2 is turned off, the MOS tube Q3 is driven to be turned on, the driving signal Vgs3 is pulled down, and the driving turn-off signal does not need to pass through the driving circuit, so that the turn-off delay time of the driving signal is reduced, and the purpose of rapidly turning off the driving signal is realized;
when the driving signal Vgs1 output by the control circuit unit is at a high level, the MOS tube Q1 is cut off, the MOS tube Q2 is turned on, the MOS tube Q3 is further cut off, the driving turn-off circuit unit does not participate in the driving process of the driving signal, and therefore the turn-off speed of the driving signal can be improved under the condition that the normal driving action of the driving signal is not affected.
Second embodiment
Fig. 3 is a schematic diagram of a second embodiment of a specific driving shutdown circuit unit provided on the basis of fig. 1, which is different from fig. 2 in that the driving shutdown circuit unit further includes a diode D1 and a PNP type triode Q4, a base electrode of the triode Q4 is connected to an anode of the diode D1 and a connection point between the current limiting resistor R1 and a drain electrode of the MOS transistor Q3, and an emitter electrode of the triode Q4 is connected to a cathode of the diode D1 for outputting a driving signal Vgs3, and a collector electrode of the triode Q4 is connected to ground.
The circuit of fig. 3 operates in a similar manner to the circuit of fig. 2, except that: when the driving signal Vgs1 output by the control circuit unit is at a low level, the driving MOS transistor Q3 is turned on and simultaneously the driving triode Q4 is turned on, so that the speed of pulling down the driving signal Vgs3 is increased, the turn-off delay time of the driving signal is further shortened, and the purpose of rapidly turning off the driving signal is realized.
The above embodiments are only for aiding in understanding the inventive concept of the present application and are not intended to limit the present utility model, and any modifications, equivalent substitutions, improvements, etc. made by those skilled in the art without departing from the principles of the present utility model should be included in the scope of the present utility model.

Claims (9)

1. A drive circuit for a switching power supply, characterized by: the driving circuit comprises a control circuit unit, a driving circuit unit and a driving turn-off circuit unit;
the first input end of the control circuit unit is used for connecting a switching power supply sampling signal VS, the second input end of the control circuit unit is used for inputting a first power supply voltage Vcc1, the output end of the control circuit unit outputs a PWM driving signal Vgs1 generated according to the sampling signal VS, the PWM driving signal Vgs1 is used for connecting the first input end of the driving circuit unit and the first input end of the driving turn-off circuit unit, the second input end of the driving circuit unit is used for inputting a second power supply voltage Vcc2, the output end of the driving circuit unit outputs a PWM driving signal Vgs2 amplified by the PWM driving signal Vgs1 to the second input end of the driving turn-off circuit unit, and the output end of the driving turn-off circuit unit outputs a PWM driving signal Vgs3 generated according to the PWM driving signal Vgs2 and the PWM driving signal Vgs 1; when the driving signal Vgs1 is at a low level, the driving signal Vgs2 is pulled down by the driving turn-off circuit unit, and the driving signal Vgs3 is output at a low level.
2. The drive circuit according to claim 1, wherein: the drive turn-off circuit unit comprises a current limiter, a MOS tube Q1, a MOS tube Q2 and a MOS tube Q3; one end of the current limiter is connected with the driving signal Vgs2, the other end of the current limiter is connected with the drain electrode of the MOS tube Q3 and is used for outputting the driving signal Vgs3, the source electrode of the MOS tube Q1 is used for inputting the first power supply voltage Vcc1, the grid electrode of the MOS tube Q2 is connected with the driving signal Vgs1, the drain electrode of the MOS tube Q2 is connected with the drain electrode of the MOS tube Q3, and the source electrode of the MOS tube Q2 is connected with the source electrode of the MOS tube Q3 and is used for grounding; the MOS tube Q1 is a P-channel type MOS tube, the MOS tube Q2 is an N-channel type MOS tube, and the MOS tube Q3 is an N-channel type MOS tube.
3. The drive circuit according to claim 2, wherein: the current limiter is a resistor R1.
4. The drive circuit according to claim 1, wherein: the drive turn-off circuit unit comprises a current limiter, a MOS tube Q1, a MOS tube Q2, a MOS tube Q3, a diode D1 and a switch tube Q4; the source electrode of the MOS tube Q1 is used for inputting a first power supply voltage Vcc1, the grid electrode is connected with the grid electrode of the MOS tube Q2 and the driving signal Vgs1, the drain electrode is connected with the drain electrode of the MOS tube Q2 and the grid electrode of the MOS tube Q3, the source electrode of the MOS tube Q2 is connected with the source electrode of the MOS tube Q3 for grounding, one end of the current limiter is connected with the driving signal Vgs2, the other end of the current limiter is connected with the source electrode of the MOS tube Q3, the anode of the diode D1 and the control end of the switching tube Q4, one end of the switching tube Q4 is connected with the cathode of the diode D1 for outputting the driving signal Vgs3, and the other end of the switching tube Q4 is connected with the ground; the MOS tube Q1 is a P-channel type MOS tube, the MOS tube Q2 is an N-channel type MOS tube, and the MOS tube Q3 is an N-channel type MOS tube.
5. The drive circuit according to claim 4, wherein: the switching tube Q4 is a PNP type triode, the base of the PNP type triode is the control end of the switching tube Q4, the emitter is one end of the switching tube Q4, and the collector is the other end of the switching tube Q4.
6. The drive circuit according to claim 4, wherein: the current limiter is a resistor R1.
7. A drive circuit for a switching power supply, characterized by: the driving circuit comprises a control circuit unit, a driving circuit unit, a resistor R1, a MOS tube Q2 and a MOS tube Q3;
the first input end of the control circuit unit is used for being connected with a switching power supply sampling signal VS, the second input end of the control circuit unit is used for inputting a first power supply voltage Vcc1, the output end of the control circuit unit outputs a PWM driving signal Vgs1 generated according to the sampling signal VS, the driving signal Vgs1 is used for being connected with the first input end of the driving circuit unit, the grid electrode of the MOS tube Q1 and the grid electrode of the MOS tube Q2, the second input end of the driving circuit unit is used for inputting a second power supply voltage Vcc2, the output end of the driving circuit unit outputs the PWM driving signal Vgs2 so as to amplify the driving signal Vgs1 and be connected with one end of the resistor R1, the other end of the resistor R1 outputs a PWM driving signal Vgs3 so as to prevent overvoltage damage of the control circuit device, the source electrode of the MOS tube Q1 is used for inputting the first power supply voltage Vcc1, the drain electrode of the MOS tube Q2 is connected with the grid electrode of the MOS tube Q3, and the source electrode of the MOS tube Q3 is connected with the source electrode of the MOS tube Q2 so as to be grounded, and the drain electrode of the MOS tube Q2 is connected with the other end of the resistor R1; the MOS tube Q1 is a P-channel type MOS tube, the MOS tube Q2 is an N-channel type MOS tube, and the MOS tube Q3 is an N-channel type MOS tube.
8. A drive circuit for a switching power supply, characterized by: the driving circuit comprises a control circuit unit, a driving circuit unit, a resistor R1, a MOS tube Q2, a MOS tube Q3, a diode D1 and a triode Q4;
the first input end of the control circuit unit is used for being connected with a switching power supply sampling signal VS, the second input end of the control circuit unit is used for inputting a first power supply voltage Vcc1, the output end of the control circuit unit outputs a PWM driving signal Vgs1 generated according to the sampling signal VS, the driving signal Vgs1 is used for being connected with the first input end of the driving circuit unit, the grid electrode of the MOS transistor Q1 and the grid electrode of the MOS transistor Q2, the second input end of the control circuit unit is used for inputting a second power supply voltage Vcc2, the output end of the control circuit unit outputs the PWM driving signal Vgs2 to amplify the driving signal Vgs1, the control circuit unit is used for being connected with one end of the resistor R1, the source electrode of the MOS transistor Q1 is used for inputting the first power supply voltage Vcc1, the drain electrode of the MOS transistor Q2 is connected with the grid electrode of the MOS transistor Q3, the source electrode of the MOS transistor Q3 is connected with the other end of the resistor R1, the anode of the transistor D1 and the base electrode of the transistor Q4 are connected with the drain electrode of the MOS transistor Q3, and the drain electrode of the transistor Q4 is connected with the drain electrode of the PWM signal D3 is connected with the drain electrode of the transistor Q1; the MOS tube Q1 is a P-channel type MOS tube, the MOS tube Q2 is an N-channel type MOS tube, the MOS tube Q3 is an N-channel type MOS tube, and the triode is a PNP type triode.
9. A switching power supply comprising the drive circuit of any one of claims 1 to 8.
CN202222870051.2U 2022-10-28 2022-10-28 Driving circuit and switching power supply Active CN219351525U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202222870051.2U CN219351525U (en) 2022-10-28 2022-10-28 Driving circuit and switching power supply

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202222870051.2U CN219351525U (en) 2022-10-28 2022-10-28 Driving circuit and switching power supply

Publications (1)

Publication Number Publication Date
CN219351525U true CN219351525U (en) 2023-07-14

Family

ID=87113717

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202222870051.2U Active CN219351525U (en) 2022-10-28 2022-10-28 Driving circuit and switching power supply

Country Status (1)

Country Link
CN (1) CN219351525U (en)

Similar Documents

Publication Publication Date Title
CN101882860B (en) Insulated gate bipolar translator (IGBT) drive and protection circuit
CN219247467U (en) Circuit control protector
CN108592343B (en) IGBT tube gate resistance adjusting circuit and air conditioner
CN210075089U (en) Isolation driving circuit
CN219351525U (en) Driving circuit and switching power supply
CN210724728U (en) MOS tube driving circuit capable of being quickly turned off
CN209545536U (en) Solid state power amplifier voltage sequential protection circuit in a kind of solid-state radar
CN114844493B (en) Delay driving circuit of dual-drive cascade device
CN106100433A (en) A kind of pulse power supply circuit being applicable to more modulation pattern
CN111464158B (en) MOS tube pulse driving circuit
CN210327368U (en) Driving circuit for MOSFET driving
CN115314038A (en) Gate-level buffer circuit based on SiC power device
CN210669880U (en) Circuit for increasing drive current of integrated chip
CN218335741U (en) Drive control circuit for realizing quick turn-off
CN111600462A (en) Synchronous rectification MOSFET drive control circuit
CN113363945A (en) High-voltage H-bridge short-circuit protection circuit
CN113437726A (en) Reverse-connection-preventing self-recovery overcurrent protection circuit
CN218103097U (en) IGBT drive protection circuit
CN218829888U (en) High-voltage high-power IGBT (insulated Gate Bipolar transistor) driving circuit
CN215581093U (en) Push-pull type driving device
CN218633684U (en) Drive turn-off control circuit
CN212135940U (en) Drive circuit based on buzzer detects with temperature
CN110895922A (en) High-reliability buzzer driving circuit
CN219459034U (en) IGBT driving and protecting circuit based on M57962AL
CN216794850U (en) Push-pull boost circuit module and push-pull boost circuit

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant