CN218829105U - IGBT overvoltage protection circuit - Google Patents
IGBT overvoltage protection circuit Download PDFInfo
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- CN218829105U CN218829105U CN202223342237.7U CN202223342237U CN218829105U CN 218829105 U CN218829105 U CN 218829105U CN 202223342237 U CN202223342237 U CN 202223342237U CN 218829105 U CN218829105 U CN 218829105U
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- 230000000452 restraining effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 8
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Abstract
The utility model relates to an IGBT overvoltage crowbar, including connecting piezo-resistor between IGBT's the C utmost point and the E utmost point, and be used for restraining IGBT normally opens or turn-offs the electric capacity suppression device of the impulse current that produces in the twinkling of an eye, electric capacity suppression device with piezo-resistor establishes ties or connects in parallel. The utility model discloses in, through setting up electric capacity suppression device, or reduce the parasitic capacitance between the C utmost point and the E utmost point of IGBT, or bypass piezo-resistor's parasitic capacitance, can be right when IGBT carries out effective overvoltage protection, effectively prolong piezo-resistor's life-span.
Description
Technical Field
The utility model relates to an overvoltage protection field, more specifically say, relate to an IGBT overvoltage protection circuit.
Background
Insulated Gate Bipolar Transistors (IGBTs) are widely used in power electronic devices, power conversion and control circuits, and their main functions are to implement frequency conversion, rectification, power amplification, power control, etc. in the circuits. The IGBT has a risk of damage in a complex circuit environment, and particularly, overvoltage and overcurrent conditions often occur in practical applications. In conventional use and design, overvoltage protection for IGBTs is mainly focused between the G pole (i.e., gate or grid) and the E pole (i.e., source or emitter), and overvoltage protection is also performed between the C pole and the E pole in power control applications, typically for controlling the coil current flowing through an electromagnetic device such as a relay.
Fig. 1 shows a prior art IGBT overvoltage protection circuit that includes a varistor connected in parallel between the C and E poles of the IGBT. However, since the switching frequency of the IGBT is high, the varistor itself has a parasitic capacitance of several hundred pF, and therefore, the charging and discharging of the varistor by the spike at the instant of switching on and off of the IGBT affects the lifetime of the varistor, and a specific current loop can be seen as an arrow in fig. 1. And the parallel piezoresistor can also intensify the temperature rise of the IGBT.
Fig. 2 shows another IGBT overvoltage protection circuit in the prior art, which includes a thyristor and a varistor connected in series between the C pole and the E pole of the IGBT, and an overvoltage detection circuit for controlling the on-off of the thyristor, and the operating principle is that, under a normal operating condition, that is, when the overvoltage detection circuit detects that there is no overvoltage between the C pole and the E pole of the IGBT, the varistor is not connected to the circuit, and there is no charging and discharging loop for the varistor when the IGBT is turned on or off, so as to prolong the life of the varistor. When the overvoltage detection circuit detects that overvoltage exists between the C pole and the E pole of the IGBT, the thyristor breakover voltage dependent resistor is switched into the circuit to suppress the overvoltage. However, the IGBT overvoltage protection circuit requires the use of a thyristor and an overvoltage detection circuit, and thus the circuit structure is complex, and the number of devices is large, so that the device cost is high and the control is complex.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model lies in, to prior art's IGBT overvoltage protection circuit, or the piezo-resistor life-span is short, or circuit structure and control are complicated, the device is numerous and defect with high costs, provide a design exquisiteness, circuit structure is simple, with low costs, the reliability is high and can effectively realize IGBT's overvoltage protection's IGBT overvoltage protection circuit.
The utility model provides a technical scheme that its technical problem adopted is: the IGBT overvoltage protection circuit is constructed and comprises a piezoresistor connected between a C pole and an E pole of the IGBT, and a capacitance suppression device used for suppressing parasitic capacitance of the piezoresistor, wherein the capacitance suppression device is connected with the piezoresistor in series or in parallel.
IGBT overvoltage protection circuit in, electric capacity suppression device is gas discharge tube, gas discharge tube with piezo-resistor establishes ties together between IGBT's the C utmost point and the E utmost point.
In the IGBT overvoltage protection circuit of the present invention, the capacitance suppressing device includes a second varistor, the varistor is connected in series with the second varistor between the C pole and the E pole of the IGBT.
In the IGBT overvoltage protection circuit of the present invention, the capacitance suppressing device includes a plurality of second piezoresistors, the piezoresistors are connected in series with the second piezoresistors between the C pole and the E pole of the IGBT.
IGBT overvoltage protection circuit in, piezo-resistor with the second piezo-resistor is the same piezo-resistor of specification parameter.
IGBT overvoltage protection circuit in, electric capacity suppression device is the electric capacity module, the electric capacity module with piezo-resistor connects in parallel together between IGBT's the C utmost point and the E utmost point.
In the IGBT overvoltage protection circuit of the present invention, the capacitor module includes an electric capacitor.
IGBT overvoltage protection circuit in, the electric capacity module includes two at least electric capacities, two at least electric capacities all connect in parallel between IGBT's the C utmost point and the E utmost point.
IGBT overvoltage protection circuit in, two at least electric capacity are the same electric capacity of specification parameter.
IGBT overvoltage protection circuit in, electric capacity is pF horizontally electric capacity.
The utility model discloses in, through setting up electric capacity suppression device, or reduce be in parasitic capacitance between IGBT's the C utmost point and the E utmost point, or bypass piezo-resistor's parasitic capacitance, can be right when IGBT carries out effective overvoltage protection, effectively prolongs piezo-resistor's life-span.
Drawings
The invention will be further explained with reference to the drawings and examples, wherein:
fig. 1 shows an IGBT overvoltage protection circuit of the prior art;
fig. 2 shows another IGBT overvoltage protection circuit of the prior art;
fig. 3 is a schematic block diagram of the IGBT overvoltage protection circuit of the present invention;
fig. 4 is a circuit diagram of a first preferred embodiment of the IGBT overvoltage protection circuit of the present invention;
fig. 5 is a circuit diagram of a second preferred embodiment of the IGBT overvoltage protection circuit of the present invention;
fig. 6 is a circuit diagram of a third preferred embodiment of the IGBT overvoltage protection circuit of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The utility model relates to an IGBT overvoltage crowbar, including connecting piezo-resistor between IGBT's the C utmost point and the E utmost point, and be used for restraining IGBT normally opens or turn-offs the electric capacity suppression device of the impulse current that produces in the twinkling of an eye, electric capacity suppression device with piezo-resistor establishes ties or connects in parallel. The utility model discloses in, through setting up the electric capacity restraines the device, or reduces the parasitic capacitance between the C utmost point (say drain electrode or collecting electrode promptly) and the E utmost point (say source electrode or projecting pole promptly) of IGBT, or bypass piezo-resistor's parasitic capacitance, can be right when IGBT carries out effective overvoltage protection, effectively prolongs piezo-resistor's life-span.
Fig. 3 is a schematic block diagram of the IGBT overvoltage protection circuit of the present invention. As shown in fig. 3, the IGBT overvoltage protection circuit includes a voltage dependent resistor R connected between a C pole and an E pole of the IGBT, and a capacitance suppression device 10 for suppressing a pulse current generated at a moment when the IGBT is normally turned on or off, where the capacitance suppression device 10 is connected in series or in parallel with the voltage dependent resistor R.
In the preferred embodiment of the present invention, the capacitance suppressing device 10 may be any suitable voltage dividing device such as a resistor or a gas discharge tube. The capacitance suppression device 10 can be connected in series with the piezoresistor R, so that a discharge path between the C pole and the E pole of the IGBT is formed in a conducting manner during overvoltage, the IGBT is protected, meanwhile, the parasitic capacitance between the C pole and the E pole of the IGBT is reduced, pulse current generated at the moment when the IGBT is normally switched on and off is reduced, and the service life of the piezoresistor is effectively prolonged.
In the preferred embodiment of the present invention, the capacitance suppression device 10 may be a capacitance module formed by connecting single or multiple capacitors in parallel, preferably a single or multiple capacitors in pF level in parallel. When the capacitor module is formed by connecting a plurality of capacitors in parallel, the capacitors can be capacitors with the same specification parameters. The specification parameters may include capacitance, and may further include capacitance error value, loss angle, temperature coefficient, leakage current, surge voltage, and temperature range.
The capacitor module can be connected with the piezoresistor R in parallel, so that the IGBT and the C pole and the E pole of the IGBT form a current loop at the moment of normal on-off, thereby bypassing the piezoresistor R and further effectively prolonging the service life of the piezoresistor. And when overvoltage occurs, the piezoresistor R can be conducted, so that a discharge path between the C pole and the E pole of the IGBT is formed, and the IGBT is protected.
Implement the utility model discloses a IGBT overvoltage crowbar, through setting up the electric capacity restraines the device, or reduces parasitic capacitance between IGBT's the C utmost point and the E utmost point, or bypass piezo-resistor's parasitic capacitance, can be right when IGBT carries out effective overvoltage protection, effectively prolong piezo-resistor's life-span.
Fig. 4 is a circuit diagram of a first preferred embodiment of the IGBT overvoltage protection circuit of the present invention. As shown in FIG. 4, the IGBT overvoltage protection circuit of the utility model comprises a voltage dependent resistor R and a gas discharge tube G which are connected between the C pole and the E pole of the IGBT. The gas discharge tube G and the piezoresistor R are connected in series between the C pole and the E pole of the IGBT together, so that the influence of parasitic capacitance of the piezoresistor on instantaneous pulse voltage of the IGBT switch can be eliminated, and the IGBT overvoltage protection circuit is exquisite in design, simple in circuit structure, low in cost, high in reliability and capable of effectively realizing overvoltage protection of the IGBT.
The principle thereof is explained below. Since the response time of the varistor R after being connected in series with the gas discharge tube G is still less than 100ns, it is verified that surge overvoltage and operation overvoltage can be suppressed. Therefore, in the standby state without overvoltage, since the impedance of the gas discharge tube G is much larger than that of the varistor R, the voltage between the C pole and the E pole of the IGBT is almost entirely applied to the gas discharge tube G. Since the parasitic capacitance of the varistor R is several hundred pF, while that of the gas discharge tube G is only a few pF. Therefore, the gas discharge tube G and the piezoresistor R are connected in parallel, so that the parasitic capacitance between the C pole and the E pole of the IGBT can be effectively reduced, and the pulse current generated at the moment of normal turn-on and turn-off of the IGBT can be effectively reduced. When overvoltage occurs, the gas discharge tube G is firstly conducted, and then the piezoresistor R is conducted to form a discharge passage, so that the overvoltage protection of the IGBT can be reliably and effectively realized.
The utility model discloses a IGBT overvoltage protection circuit can carry out overvoltage protection to IGBT's the C utmost point and the E utmost point effectively through adopting piezo-resistor R series gas discharge tube G and restrain to can reduce the pulse peak current of return circuit when IGBT normally opens the turn-off, consequently can be right when IGBT carries out effective overvoltage protection, effectively prolong piezo-resistor's life-span. And the whole circuit adopts a structure of 1+1, so the design is exquisite, the circuit structure is simple, the cost is low, and the reliability is high. In addition, the residual voltage of the gas discharge tube G after being conducted is only dozens of V, and the influence of the whole residual voltage is not large. Further, the gas discharge tube G can further reduce the temperature rise of the piezoresistor R and the IGBT to prolong the service life of the piezoresistor R and the IGBT.
Fig. 5 is a circuit diagram of a second preferred embodiment of the IGBT overvoltage protection circuit of the present invention. As shown in FIG. 5, the IGBT overvoltage protection circuit of the utility model comprises piezoresistors R1 and R2 connected between the C pole and the E pole of the IGBT. The piezoresistors R1 and R2 are connected in series.
As shown in fig. 5, the parasitic capacitance of the varistor R1 is C1, and the parasitic capacitance of the varistor R2 is C2. When the piezoresistors R1 and R2 are connected in series, the parasitic capacitors C1 and C2 are connected in series, so that the total parasitic capacitance of a loop between a C pole and an E pole of the IGBT can be reduced, the impedance of the whole loop is increased, and the pulse spike current of the loop when the IGBT is normally switched on and off is further reduced. The specific current loop can be seen as indicated by the arrow in fig. 5. When overvoltage occurs, the piezoresistors R1 and R2 can be conducted to form a discharge path, so that the overvoltage protection of the IGBT can be reliably and effectively realized.
Preferably, the piezoresistors R1 and R2 are piezoresistors with the same specification parameters. Those skilled in the art will appreciate that the specification parameters of the varistor include varistor voltage, maximum allowable voltage, current capacity, maximum limit voltage, maximum energy, voltage ratio, rated power, maximum peak current, residual voltage ratio, leakage current, voltage temperature coefficient, current temperature coefficient, voltage non-linearity coefficient, insulation resistance, static capacitance, etc., all of which can be obtained from the parameter table. In a further preferred embodiment of the present invention, more piezoresistors with the same specification can be connected in series.
The utility model discloses a IGBT overvoltage protection circuit can carry out overvoltage protection to IGBT's the C utmost point and the E utmost point effectively through adopting two piezo-resistor R series connection and restrain to can reduce IGBT and normally open the pulse peak current of turn-off time return circuit, consequently can be right when effectively overvoltage protection is carried out to IGBT, effectively prolong piezo-resistor's life-span. And the whole circuit adopts a structure of 1+1, so the design is exquisite, the circuit structure is simple, the cost is low, and the reliability is high. On the premise that the withstand voltage of the IGBT is less than the residual voltage of the series connection of the two piezoresistors, the scheme also has the advantages of quick response and small leakage current
Fig. 6 is a circuit diagram of a third preferred embodiment of the IGBT overvoltage protection circuit of the present invention. As shown in FIG. 6, the IGBT overvoltage protection circuit of the utility model comprises a voltage dependent resistor R and a capacitor module C which are connected between the C pole and the E pole of the IGBT. The capacitor module C may include one capacitor, or may include two or more capacitors connected in parallel. The capacitance module and the piezoresistor R are connected in parallel between the C pole and the E pole of the IGBT. The capacitance module is preferably a pF stage capacitance or a plurality of pF stage capacitances connected in parallel.
As shown in fig. 6, in the waiting state without overvoltage, the pulse current generated at the moment when the IGBT is normally turned on and off flows through the capacitor module C to form a current loop, thereby bypassing the voltage dependent resistor R, so that the pulse spike current in the loop does not pass through the voltage dependent resistor when the IGBT is normally turned on and off. The specific current loop can be seen as the arrow in fig. 6. When overvoltage occurs, the voltage dependent resistor R is conducted to form a discharge path, so that overvoltage protection of the IGBT can be reliably and effectively realized.
The utility model discloses a IGBT overvoltage protection circuit can carry out overvoltage protection to the C utmost point and the E utmost point of IGBT effectively through piezo-resistor and electric capacity module are parallelly connected and restrain to the pulse peak current of return circuit when can normally opening the turn-off by bypass IGBT, consequently can be right when IGBT carries out effective overvoltage protection, effectively prolongs piezo-resistor's life-span. And the whole circuit only needs to adopt a capacitor at a pF level, is simple to realize, has exquisite design, low cost and high reliability.
While the invention has been described with reference to specific embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from its scope. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not intended to limit the present invention, and any modifications, equivalents, improvements, etc. made within the spirit and principles of the present invention should be included within the scope of the present invention.
Claims (10)
1. An IGBT overvoltage protection circuit comprises a voltage dependent resistor connected between a C pole and an E pole of an IGBT, and is characterized by further comprising a capacitance suppression device used for suppressing parasitic capacitance of the voltage dependent resistor, wherein the capacitance suppression device is connected with the voltage dependent resistor in series or in parallel.
2. The IGBT overvoltage protection circuit according to claim 1, wherein the capacitance suppression device is a gas discharge tube connected in series with the varistor between the C and E poles of the IGBT.
3. The IGBT overvoltage protection circuit according to claim 1, wherein the capacitance suppression device comprises a second varistor, the varistor and the second varistor together being connected in series between the C pole and the E pole of the IGBT.
4. The IGBT overvoltage protection circuit of claim 3, wherein the capacitance suppression device comprises a plurality of second piezoresistors, and the piezoresistors and the plurality of second piezoresistors are connected in series between the C pole and the E pole of the IGBT together.
5. The IGBT overvoltage protection circuit according to claim 3 or 4, wherein the piezoresistor and the second piezoresistor are piezoresistors with the same specification parameters.
6. The IGBT overvoltage protection circuit of claim 1, wherein the capacitance suppression device is a capacitance module connected in parallel with the voltage dependent resistor between the C pole and the E pole of the IGBT.
7. The IGBT overvoltage protection circuit according to claim 6, wherein the capacitance module comprises a capacitor.
8. The IGBT overvoltage protection circuit of claim 6, wherein the capacitance module comprises at least two capacitances, each of the at least two capacitances being connected in parallel between the C and E poles of the IGBT.
9. The IGBT overvoltage protection circuit of claim 8, wherein the at least two capacitors are capacitors of the same specification parameters.
10. The IGBT overvoltage protection circuit according to any one of claims 7-9, wherein the capacitance is a capacitance on the pF scale.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202223342237.7U CN218829105U (en) | 2022-12-12 | 2022-12-12 | IGBT overvoltage protection circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202223342237.7U CN218829105U (en) | 2022-12-12 | 2022-12-12 | IGBT overvoltage protection circuit |
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| CN218829105U true CN218829105U (en) | 2023-04-07 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117878857A (en) * | 2024-01-05 | 2024-04-12 | 保定市宏诚变流器制造有限公司 | High-low voltage sparkless transition circuit, system and vehicle body electrophoresis method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117878857A (en) * | 2024-01-05 | 2024-04-12 | 保定市宏诚变流器制造有限公司 | High-low voltage sparkless transition circuit, system and vehicle body electrophoresis method |
| CN117878857B (en) * | 2024-01-05 | 2024-11-26 | 保定市宏诚变流器制造有限公司 | A high-low voltage sparkless transition circuit, system and vehicle body electrophoresis method |
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