CN218824365U - Uniaxial piezoresistive acceleration sensor based on MEMS (micro-electromechanical systems) process - Google Patents
Uniaxial piezoresistive acceleration sensor based on MEMS (micro-electromechanical systems) process Download PDFInfo
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- CN218824365U CN218824365U CN202223358693.0U CN202223358693U CN218824365U CN 218824365 U CN218824365 U CN 218824365U CN 202223358693 U CN202223358693 U CN 202223358693U CN 218824365 U CN218824365 U CN 218824365U
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Abstract
The utility model is suitable for an acceleration sensor technical field provides a unipolar piezoresistive acceleration sensor based on MEMS technology, including the detection layer, the upper and lower both sides on detection layer all are provided with the protection apron, the detection layer includes braced frame, two quality pieces are installed to the symmetry among the braced frame, install spacing roof beam, two among the braced frame the quality piece all is connected, two through a supporting beam and braced frame's inner wall the center of quality piece all is connected, two through linking roof beam and spacing roof beam one side that the quality piece is relative all is provided with two sensitive roof beams, the one end that the quality piece was kept away from to sensitive roof beam is connected on spacing roof beam, every all be provided with piezo-resistor on the sensitive roof beam. The device effectively reduces the sensitivity in other non-sensitive directions and improves the natural frequency on the premise of ensuring that the structure has enough sensitivity in the sensitive direction. Low production cost and easy realization of the process.
Description
Technical Field
The utility model belongs to the technical field of acceleration sensor, especially, relate to a unipolar piezoresistive acceleration sensor based on MEMS technology.
Background
MEMS accelerometers are widely classified according to different types of sensitive signals, and may be classified into piezoelectric type, piezoresistive type, capacitive type, thermal convection type, resonant type, tunnel current type, and the like, in which the piezoresistive accelerometer has advantages of high sensitivity, good stability, good dynamic response, low mass production cost, good process compatibility with semiconductor integrated circuits, and the like, and thus is widely favored. The high G value MEMS acceleration sensor is used as an inertia device, is mainly used for measuring and controlling the speed change of a carrier moving at high speed in the starting and running processes, is widely applied to the fields of weapons, aerospace, civilian use and the like, and is used for controlling the detonation time of a projectile warhead, the automobile collision, the measurement of the load size when an airplane falls and the like in the penetration process of a ground penetrating projectile.
At present, the typical structure of an acceleration sensor using the piezoresistive principle at home and abroad is mainly divided into two types, namely a beam-mass block type and a flat membrane type. The beam-mass block type structure has higher sensitivity, but the inherent frequency is difficult to improve, and because the mass center of the mass block and the central plane of the beam are positioned on different planes, the shock resistance is poorer, and particularly when the structure bears the transverse acceleration, the structure can be twisted due to larger torque, so that the structure is damaged; the flat membrane type structure has high natural frequency, can effectively improve the shock resistance, and can bear higher transverse acceleration, but because the existence of a relative mass block does not exist, a stress concentration area is smaller, the sensitivity is relatively lower, and the linearity is poorer. The MEMS acceleration sensor is easy to fail under high-G impact load in severe environment application, so that the MEMS acceleration sensor cannot work normally.
SUMMERY OF THE UTILITY MODEL
An object of the embodiment of the utility model is to provide a unipolar piezoresistive acceleration sensor based on MEMS technology aims at solving the problem that provides among the above-mentioned background art.
The embodiment of the utility model provides a realize like this, a unipolar piezoresistive acceleration sensor based on MEMS technology, including the detection layer, the upper and lower both sides of detection layer all are provided with the protection apron, the detection layer is central symmetry formula structure, the detection layer includes braced frame, two quality pieces are installed to the symmetry among the braced frame, the spacing roof beam of central symmetry formula is still installed among the braced frame, and two the quality piece is located the both sides of spacing roof beam respectively, spacing roof beam is used for carrying out spacing support protection, two to the working direction of quality piece the quality piece all through a supporting beam and braced frame's interior wall connection, two the center of quality piece all is connected with spacing roof beam, two through linking the roof beam, two one side that the quality piece is relative all is provided with two sensitive roof beams, and two on the same quality piece sensitive roof beam is symmetrical about linking the roof beam, the one end that the quality piece was kept away from to the sensitive roof beam is connected on spacing roof beam, every all be provided with piezo-resistor on the sensitive roof beam.
According to the further technical scheme, the thickness of the sensitive beam is the same as that of the mass block.
In a further technical scheme, the protective cover plate is made of glass.
According to the further technical scheme, the two protective cover plates are arranged on the supporting frame in a mode of contraposition silicon-glass anodic bonding with the supporting frame.
The embodiment of the utility model provides a pair of unipolar piezoresistive acceleration sensor based on MEMS technology, the device are guaranteeing that the structure has under the prerequisite of enough sensitivity in sensitive direction, have effectively reduced other non-sensitive ascending sensitivities to make obtaining of natural frequency improve. Low production cost and easy realization of the process.
Drawings
Fig. 1 is a schematic view of an overall assembly of a uniaxial piezoresistive acceleration sensor based on an MEMS process according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a detection layer in a uniaxial piezoresistive acceleration sensor based on a MEMS process according to an embodiment of the present invention;
fig. 3 is a top view of a detection layer in a uniaxial piezoresistive acceleration sensor based on a MEMS process provided by the present invention.
In the drawings: a detection layer 1; a protective cover plate 2; a support frame 3; a mass block 4; a support beam 5; a sensitive beam 6; a limit beam 7; a link beam 8; a varistor 9.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The following detailed description is provided to illustrate specific embodiments of the present invention.
As shown in fig. 1-3, for the utility model discloses a unipolar piezoresistive acceleration sensor based on MEMS technology that embodiment provided, including detection layer 1, detection layer 1's upper and lower both sides all are provided with protective cover 2, detection layer 1 is central symmetry formula structure, detection layer 1 includes braced frame 3, two quality pieces 4 are installed to the symmetry in braced frame 3, braced frame 3 still installs central symmetry formula spacing roof beam 7, and two quality piece 4 is located the both sides of spacing roof beam 7 respectively, spacing roof beam 7 is used for carrying out spacing support protection to the working direction of quality piece 4, two quality piece 4 all is connected with braced frame 3's inner wall through a supporting beam 5, two quality piece 4's center all is connected with spacing roof beam 7 through linking roof beam 8, two one side that quality piece 4 is relative all is provided with two sensing roof beam 6, and two on same one side sensing roof beam 4 sensing roof beam 6 is symmetrical about linking roof beam 8, sensing roof beam 6 keeps away from 4's one end and connects on spacing roof beam 7, every all be provided with resistance 9 on sensing roof beam 6.
The embodiment of the utility model provides an in, two quality pieces 4 are located braced frame 3's central both sides, and a supporting beam 5's one end links to each other with quality piece 4, and the other end is fixed on braced frame 3's inner wall, and piezo-resistor 9 makes on sensitive roof beam 6, can make a piezo-resistor 9 through ion implantation doping on every sensitive roof beam 6, can realize detecting the output of bridge full-bridge after the interconnection.
The limiting beam 7 is used for limiting, supporting and protecting the working direction (X axis) of the mass block 4, and the sensitive detection structure can bear higher impact load.
The sensitivity, linearity and impact and overload resistance of the accelerometer can be adjusted by changing the size of the mass block 4, the rigidity of the limiting beam 7 and the distance between the sensitive beam 6 and the central linking beam 8.
As an optimized embodiment of the utility model, the sensitivity of the thinner accelerometer of sensitive roof beam 6 is higher, also can be the same with the thickness of quality piece 4, can bear bigger impact load like this and also can keep higher sensitivity and better linearity simultaneously.
As a preferred embodiment of the present invention, the material of the protection cover plate 2 is glass, and two protection cover plates 2 are respectively aligned with the supporting frame 3 to form a sealed vacuum chamber, so that the air damping in the chamber is reduced and the suitable damping ratio is maintained, thereby ensuring the dynamic response characteristic of the accelerometer and protecting and limiting the protection cover plate 2.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (4)
1. The utility model provides a unipolar piezoresistive acceleration sensor based on MEMS technology, includes the detection layer, the upper and lower both sides of detection layer all are provided with protective cover board, a serial communication port, the detection layer is central symmetry formula structure, the detection layer includes braced frame, two quality pieces are installed to the symmetry among the braced frame, the spacing roof beam of central symmetry formula is still installed among the braced frame, and two the quality piece is located the both sides of spacing roof beam respectively, spacing roof beam is used for carrying out spacing support protection, two to the working direction of quality piece the quality piece all through a supporting beam and braced frame's interior wall connection, two the center of quality piece all is connected with spacing roof beam, two through linking the roof beam, two one side that the quality piece is relative all is provided with two sensitive roof beams, and two on the same quality piece sensitive roof beam is symmetrical about linking the roof beam, the one end that the quality piece was kept away from to sensitive roof beam is connected on spacing roof beam, every all be provided with piezo-resistor on the sensitive roof beam.
2. The uniaxial piezoresistive acceleration sensor based on MEMS technology of claim 1, where the thickness of the sensing beam is the same as the thickness of the proof mass.
3. The uniaxial piezoresistive acceleration sensor based on MEMS technology as claimed in claim 1, wherein the material of the protective cover plate is glass.
4. The uniaxial piezoresistive acceleration sensor based on MEMS technology of claim 3, wherein both said protective cover plates are mounted on the supporting frame by means of aligned silicon-glass anodic bonding with the supporting frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223358693.0U CN218824365U (en) | 2022-12-14 | 2022-12-14 | Uniaxial piezoresistive acceleration sensor based on MEMS (micro-electromechanical systems) process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223358693.0U CN218824365U (en) | 2022-12-14 | 2022-12-14 | Uniaxial piezoresistive acceleration sensor based on MEMS (micro-electromechanical systems) process |
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| Publication Number | Publication Date |
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| CN218824365U true CN218824365U (en) | 2023-04-07 |
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| CN202223358693.0U Active CN218824365U (en) | 2022-12-14 | 2022-12-14 | Uniaxial piezoresistive acceleration sensor based on MEMS (micro-electromechanical systems) process |
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| CN (1) | CN218824365U (en) |
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2022
- 2022-12-14 CN CN202223358693.0U patent/CN218824365U/en active Active
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