CN217087756U

CN217087756U - High-capacity IGBT multi-parallel power unit

Info

Publication number: CN217087756U
Application number: CN202220963460.4U
Authority: CN
Inventors: 董金龙; 范方起; 孙长冬; 张俊
Original assignee: Shandong Taikai Power Electronic Co ltd
Current assignee: Shandong Taikai Power Electronic Co ltd
Priority date: 2022-04-20
Filing date: 2022-04-20
Publication date: 2022-07-29
Anticipated expiration: 2032-04-20

Abstract

The utility model relates to a big capacity IGBT power unit that connects in parallel more, including the inside water-cooling radiator of shell and device, control mechanism, two IGBT modules, every IGBT module includes at least three parallelly connected IGBT module, and on the radiator subassembly was arranged in to the IGBT module, still included and correspond the interchange row, the female subassembly of stromatolite of being connected with the IGBT module, still included capacitor assembly, IGBT module and capacitor assembly passed through the female subassembly of arranging of stromatolite and connect, the inside device of power unit encircles the formula and arranges, and the structure is complete symmetry, and two IGBT modules and radiator module distribute in the left and right sides in inner space, and heat dispersion is good, and every female self-symmetry of arranging, every IGBT through-flow path is complete unanimous, and the characteristic of flow equalizing is good, and the reliability is high.

Description

High-capacity IGBT multi-parallel power unit

Technical Field

The utility model relates to a high pressure chain water-cooling SVG device technical field specifically is a many parallelly connected power unit of large capacity IGBT.

Background

With the increasing market demand for high-power SVG products, the IGBT parallel connection scheme has become a trend at present, and the parallel connection of the IGBT modules can provide the advantages of higher current density, uniform heat distribution, flexible layout, higher cost performance and the like. By combining the low-power IGBT module and the high-power IGBT module in parallel, equivalent modules with different rated currents can be obtained, and the parallel connection mode is flexible and various.

The key technical problem to be solved when the parallel connection of the IGBTs is realized is current sharing, and the excellent current sharing design can furthest exert the capacity of the IGBTs. The key of current sharing is to keep the consistency of all parameters of the IGBT and to eliminate the influence of magnetic fields generated by the busbar and the output terminal on the current sharing.

SUMMERY OF THE UTILITY MODEL

In order to solve the problem of the aforesaid but the parallelly connected design of flow equalizing of good outstanding IGBT, the utility model provides a many parallelly connected power units of large capacity IGBT.

The utility model discloses technical scheme as follows:

the utility model provides a many parallelly connected power unit of large capacity IGBT, includes the shell, the shell is connected with control mechanism, control mechanism connects two IGBT modules, IGBT module symmetry sets up, just control mechanism's one side connection is kept away from to the IGBT module is fixed with the radiator module, the radiator module adopts the symmetry to set up equally, and with shell fixed connection, two the IGBT module is connected with respectively and exchanges row, it arranges the symmetry and sets up, two to exchange the IGBT module keep away from the one end of exchanging row and connect the both ends that the stromatolite was arranged the subassembly respectively, the stromatolite is arranged one side that the IGBT module was kept away from to the subassembly and is connected with a plurality of capacitor assembly, capacitor assembly circumference sets up on the stromatolite is arranged.

Preferably, the IGBT module includes three or more IGBT modules.

Preferably, the two ends of the laminated busbar assembly connected with the IGBT module are bent upwards, namely the section is U-shaped. The left side and the right side are completely symmetrical, so that each IGBT is in live connection through copper bars with equal length, and the through-current paths are consistent.

Preferably, the laminated busbar assembly comprises a positive direct current busbar and a negative direct current busbar, and each busbar is of a symmetrical structure and is laminated together through an insulating pad. The coupling area between the positive and negative copper bars is greatly reduced, and each busbar is symmetrical, so that the current sharing of the busbar can be realized.

Preferably, the radiator module comprises a plurality of water-cooling radiators, and a water inlet and a water outlet of each water-cooling radiator are arranged on the same side. The heat dissipation effect is good.

Preferably, one end of the capacitor assembly, which is far away from the laminated busbar assembly, is fixed with the shell. The structure is stable, the fixing effect is poor only through the laminated busbar assembly, and the shell is L-shaped, so that the capacitor assembly is convenient to fix.

Preferably, the control mechanism is disposed in a central position of the housing. Because the control mechanism needs to be connected with the IGBT modules, and the IGBT modules are symmetrically arranged, the control mechanism needs to be arranged at a central position in order to facilitate wiring and obtain a more compact structure.

The beneficial effects of the utility model reside in that: the utility model relates to a big capacity IGBT power unit that connects in parallel more, the inside device surrounding type of power unit arranges, and the structure symmetry, and adopts the exchange of two IGBT modules and complete symmetry to arrange, the female subassembly and the radiator module of arranging of stromatolite, and heat dispersion is good, and every female the arranging symmetry separately of arranging the subassembly of stromatolite mother can realize female flow equalizing of arranging self, and every IGBT through-flow path is identical completely, has guaranteed the degree of flow equalizing of parallelly connected IGBT, and the characteristic of flow equalizing is good, and the reliability is high.

Drawings

The aspects and advantages of the present application will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention.

In the drawings:

FIG. 1 is a perspective view of the present invention;

FIG. 2 is a front view of the structure of the present invention;

FIG. 3 is a schematic top view of the structure of the present invention;

the components represented by the reference numerals in the figures are:

1. a housing; 2. a heat sink module; 3. a control mechanism; 4. a first IGBT module; 5. a second IGBT module; 6. an alternating current row; 7. a laminated busbar assembly; 8. a capacitor component; 9. a first heat dissipation module; 10. and a second heat dissipation module.

Detailed Description

Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. It should be noted that these embodiments are provided so that this disclosure can be more completely understood and fully conveyed to those skilled in the art, and the present disclosure may be implemented in various forms without being limited to the embodiments set forth herein.

Examples

1-3, the high-capacity IGBT multi-parallel power unit comprises a housing 1 for supporting, wherein the housing 1 is L-shaped, the housing 1 is connected with a control mechanism 3, and the control mechanism 3 is arranged at the center of the housing 1, so that wiring is facilitated and a more compact structure is obtained.

Control mechanism 3 connects two IGBT modules, IGBT module symmetry sets up, is first IGBT module 4 and second IGBT module 5 respectively, just one side that control mechanism 3 was kept away from to the IGBT module is fixed at radiator module 2, radiator module 2 adopts the symmetry setting equally, and with 1 fixed connection of shell, is first radiator module 9 and second radiator module 10 respectively, radiator module 2 includes a plurality of water-cooling radiators, and water-cooling radiator's water inlet and delivery port are in same one side. The heat dissipation effect is good. The IGBT module in the cooling work is convenient.

Further, two IGBT modules are respectively connected with an alternating current bar 6, the alternating current bar 6 is symmetrically arranged, the structure of the alternating current bar 6 is completely symmetrical, through the way of digging holes, slotting and the like, the through-current paths of all the IGBT modules are consistent, one ends, far away from the alternating current bar 6, of the two IGBT modules are respectively connected with two ends of a laminated busbar assembly 7 and are connected to form a loop, namely the two alternating current bars 6 are respectively connected with the positive electrode and the negative electrode above the two IGBT modules, and the laminated busbar assembly 7 is connected with the positive electrode and the negative electrode below the two IGBT modules. Referring to fig. 2, when the upper side of the first left IGBT module 4 is the positive electrode, the lower side is the negative electrode, the upper side of the corresponding second IGBT module 5 is the negative electrode, and the lower side is the positive electrode, at this time, the laminated busbar assembly 7 is used for connecting the positive electrodes and the negative electrodes of the two IGBT modules, and the two ac rows 6 are respectively connected to the positive electrodes and the negative electrodes of the two IGBT modules. After external structures are externally connected, a complete loop can be formed.

Further, one side of the laminated busbar assembly 7, which is far away from the IGBT module, is connected with a plurality of capacitor assemblies 8, the capacitor assemblies 8 are circumferentially arranged on the laminated busbar, and one ends of the capacitor assemblies 8, which are far away from the laminated busbar assembly 7, are fixed with the shell 1. The structure is stable, the fixing effect is poor only through the laminated busbar assembly 7, and the shell 1 is L-shaped, so that the capacitor assembly 8 is convenient to fix. And the number of the capacitor elements 8 is determined by the specific case.

As shown in fig. 2, two ends of the laminated busbar assembly 7 connected to the IGBT module are bent upward, that is, the section is U-shaped. The left side and the right side are completely symmetrical, so that each IGBT is in live connection through copper bars with equal length, and the through-current paths are consistent. Different from the traditional design of the laminated busbar assembly 7 adopting an L-shaped structure, the design has remarkable improvement.

Further, the laminated busbar assembly 7 comprises a positive direct current busbar and a negative direct current busbar, each busbar is of a symmetrical structure and is laminated together through an insulating pad. The coupling area between the positive and negative copper bars is greatly reduced, and each busbar is symmetrical, so that the current sharing of the busbar can be realized.

The IGBT module comprises three or more IGBT modules. And the IGBT module is obtained by procurement, and therefore, detailed description is omitted.

The above description is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention should be covered by the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. A high-capacity IGBT multi-parallel power unit is characterized by comprising a shell (1), the shell (1) is connected with a control mechanism (3), the control mechanism (3) is connected with two IGBT modules, the IGBT modules are symmetrically arranged, and one side of the IGBT module group far away from the control mechanism (3) is fixedly connected with a radiator module (2), the two radiator modules (2) are also symmetrically arranged, and is fixedly connected with the shell (1), the two IGBT modules are respectively connected with an alternating current bar (6), the alternating-current bars (6) are symmetrically arranged, one ends of the two IGBT modules far away from the alternating-current bars (6) are respectively connected with two ends of a laminated busbar assembly (7), one side of the laminated busbar assembly (7) far away from the IGBT module is connected with a plurality of capacitor assemblies (8), and the capacitor assemblies (8) are circumferentially arranged on the laminated busbar.

2. A large capacity IGBT multiple parallel connection power unit according to claim 1, characterized in that the IGBT module group comprises three and more than three IGBT modules.

3. A large capacity IGBT multi-parallel power unit as claimed in claim 1, characterized in that said laminated busbar assembly (7) is connected with both ends of the IGBT module and bent upwards, i.e. the cross-section is U-shaped.

4. A high-capacity IGBT multi-parallel power unit as claimed in claim 3, characterized in that said laminated busbar assembly (7) comprises a positive DC busbar and a negative DC busbar, each busbar is symmetrical and laminated together by an insulating pad.

5. A high capacity IGBT multi-parallel power unit as defined in claim 1, wherein said radiator module (2) comprises a plurality of water-cooled radiators, the water inlets and water outlets of which are on the same side.

6. A large capacity IGBT multi-parallel power unit as claimed in claim 1, characterized in that the end of said capacitor assembly (8) far away from the laminated busbar assembly (7) is fixed with the housing (1).

7. A high capacity IGBT multiple parallel power unit according to claim 1, characterized in that said control mechanism (3) is arranged in a central position.