CN213242485U - 一种等离子体处理装置 - Google Patents
一种等离子体处理装置 Download PDFInfo
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- CN213242485U CN213242485U CN202022643438.5U CN202022643438U CN213242485U CN 213242485 U CN213242485 U CN 213242485U CN 202022643438 U CN202022643438 U CN 202022643438U CN 213242485 U CN213242485 U CN 213242485U
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- plasma
- channel plate
- plasma channel
- processing apparatus
- plasma processing
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims description 12
- 239000004033 plastic Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 28
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 238000000034 method Methods 0.000 description 14
- 238000004380 ashing Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202022643438.5U CN213242485U (zh) | 2020-11-16 | 2020-11-16 | 一种等离子体处理装置 |
Applications Claiming Priority (1)
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CN202022643438.5U CN213242485U (zh) | 2020-11-16 | 2020-11-16 | 一种等离子体处理装置 |
Publications (1)
Publication Number | Publication Date |
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CN213242485U true CN213242485U (zh) | 2021-05-18 |
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CN202022643438.5U Active CN213242485U (zh) | 2020-11-16 | 2020-11-16 | 一种等离子体处理装置 |
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CN (1) | CN213242485U (zh) |
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2020
- 2020-11-16 CN CN202022643438.5U patent/CN213242485U/zh active Active
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Date | Code | Title | Description |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Shanghai Lingang Financial Leasing Co.,Ltd. Assignor: Shanghai Nippon Semiconductor Equipment Co.,Ltd. Contract record no.: X2022980015712 Denomination of utility model: A plasma treatment device Granted publication date: 20210518 License type: Exclusive License Record date: 20220920 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: A plasma treatment device Effective date of registration: 20220920 Granted publication date: 20210518 Pledgee: Shanghai Lingang Financial Leasing Co.,Ltd. Pledgor: Shanghai Nippon Semiconductor Equipment Co.,Ltd. Registration number: Y2022980015786 |
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EC01 | Cancellation of recordation of patent licensing contract | ||
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: Shanghai Lingang Financial Leasing Co.,Ltd. Assignor: Shanghai Nippon Semiconductor Equipment Co.,Ltd. Contract record no.: X2022980015712 Date of cancellation: 20231027 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20231027 Granted publication date: 20210518 Pledgee: Shanghai Lingang Financial Leasing Co.,Ltd. Pledgor: Shanghai Nippon Semiconductor Equipment Co.,Ltd. Registration number: Y2022980015786 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: A plasma treatment device Granted publication date: 20210518 Pledgee: Industrial Bank Co.,Ltd. Shanghai pilot Free Trade Zone Lingang New District sub branch Pledgor: Shanghai Nippon Semiconductor Equipment Co.,Ltd. Registration number: Y2024310000054 |