CN212516930U - Low self-inductance DC bus capacitor - Google Patents
Low self-inductance DC bus capacitor Download PDFInfo
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- CN212516930U CN212516930U CN202021342063.2U CN202021342063U CN212516930U CN 212516930 U CN212516930 U CN 212516930U CN 202021342063 U CN202021342063 U CN 202021342063U CN 212516930 U CN212516930 U CN 212516930U
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Abstract
The utility model provides a direct current bus capacitor of low self-inductance, first electric capacity core and second electric capacity core including coaxial setting, be provided with insulating diaphragm between first electric capacity core and the second electric capacity core, first electric capacity core is provided with first up end and first terminal surface down, terminal surface under second electric capacity core is provided with second up end and second, terminal surface is through first copper strips parallel connection under first up end and the second, terminal surface and second up end are through second copper strips parallel connection, adopt the copper strips with the core terminal surface dislocation connection from top to bottom, make core current opposite direction, the current direction of two arbitrary adjacent copper strips is also opposite simultaneously, the self-inductance of core and copper strips is offset mutually because of the polarity difference. The extraction electrode adopts a laminated structure, and self-inductance of the electrodes is mutually offset. The capacitors are mutually offset due to self-inductance, and the inductance of a single capacitor is less than 15nH and far lower than that of the existing direct current bus capacitor.
Description
Technical Field
The utility model relates to a low direct current bus capacitor of self-inductance.
Background
The direct current bus capacitor is widely used in power electronic equipment such as frequency converters, energy storage power supplies and electric automobiles, and plays a role in smoothing bus waveforms and providing energy for switching on a rear-stage inverter. The existing direct current bus capacitor is generally cylindrical, the upper end face and the lower end face of an internal capacitor core are directly led out to the same-end electrode by using copper strips, the self inductance of a single direct current bus capacitor with the structure is generally 50 nH-100 nH, the performance of a power electronic circuit is influenced by the larger self inductance, the bypass effect of a power supply is influenced, and the working state and the safety of the capacitor are also influenced. Reducing the self-inductance of dc bus capacitors is an urgent need in the power electronics industry.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problem, the utility model provides a direct current bus capacitor of low self-inductance.
The utility model provides a direct current bus capacitor of low self-inductance, first electric capacity core and second electric capacity core including coaxial setting, be provided with insulating diaphragm between first electric capacity core and the second electric capacity core, first electric capacity core is provided with first up end and first terminal surface down, second electric capacity core is provided with terminal surface under second up end and the second, terminal surface is through first copper strips parallel connection under first up end and the second, first terminal surface and second up end pass through second copper strips parallel connection.
In one or more embodiments, the semiconductor device is further provided with an upper stacked electrode and a lower stacked electrode, the first copper strip is connected with the lower stacked electrode, and the second copper strip is connected with the upper stacked electrode.
In one or more embodiments, a PET insulating film spacer is disposed between the upper and lower stacked electrodes.
In one or more embodiments, it is encapsulated on the housing by an epoxy.
The utility model has the advantages that: the upper end face and the lower end face of the core are connected in a staggered mode through the copper strips, so that the current directions of the core are opposite, the current directions of any two adjacent copper strips are also opposite, and the self-inductances of the core and the copper strips are mutually offset due to different polarities. The extraction electrode adopts a laminated structure, and self-inductance of the electrodes is mutually offset. The capacitors are mutually offset due to self-inductance, and the inductance of a single capacitor is less than 15nH and far lower than that of the existing direct current bus capacitor.
Drawings
Fig. 1 is a schematic structural diagram of a low self-inductance dc bus capacitor.
FIG. 2 is another side view of the first capacitor core and the second capacitor core of the low self-inductance DC bus capacitor.
Detailed Description
The application scheme is further described below with reference to the accompanying drawings:
referring to fig. 1-2 the utility model provides a low self-inductance dc bus capacitor, including coaxial first electric capacity core 1 and the second electric capacity core 2 that sets up, be provided with insulating diaphragm 9 between first electric capacity core 1 and the second electric capacity core 2, first electric capacity core 1 is provided with first up end 11 and first terminal surface 12 down, second electric capacity core 2 is provided with terminal surface 22 under second up end 21 and the second, terminal surface 22 passes through first copper strips 4 parallel connection under first up end 11 and the second, first terminal surface 12 and second up end 21 pass through second copper strips 3 parallel connection.
Furthermore, an upper laminated electrode 5 and a lower laminated electrode 6 are also arranged, the first copper belt 4 is connected with the lower laminated electrode 6, and the second copper belt 3 is connected with the upper laminated electrode 5.
Further, a PET insulating film spacer 7 is provided between the upper laminated electrode 5 and the lower laminated electrode 6.
Further, it is encapsulated on the housing 8 by epoxy resin.
The above preferred embodiments should be considered as examples of the embodiments of the present application, and technical deductions, substitutions, improvements and the like similar to, similar to or based on the embodiments of the present application should be considered as the protection scope of the present patent.
Claims (4)
1. The utility model provides a direct current bus capacitor of low self-inductance, its characterized in that, including coaxial first electric capacity core and the second electric capacity core that sets up, be provided with insulating diaphragm between first electric capacity core and the second electric capacity core, first electric capacity core is provided with first up end and first terminal surface down, second electric capacity core is provided with terminal surface under second up end and the second, first up end and second terminal surface down pass through first copper strips parallel connection, first terminal surface and second up end pass through second copper strips parallel connection.
2. The low self-inductance DC bus capacitor as claimed in claim 1, wherein there are further provided an upper stacked electrode and a lower stacked electrode, said first copper tape is connected to the lower stacked electrode, and said second copper tape is connected to the upper stacked electrode.
3. The low self-inductance DC bus capacitor as claimed in claim 2, wherein a PET insulating film spacer is provided between the upper and lower laminated electrodes.
4. The low self-inductance, direct current bus capacitor of claim 1, encapsulated in an outer shell by an epoxy resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202021342063.2U CN212516930U (en) | 2020-07-09 | 2020-07-09 | Low self-inductance DC bus capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202021342063.2U CN212516930U (en) | 2020-07-09 | 2020-07-09 | Low self-inductance DC bus capacitor |
Publications (1)
Publication Number | Publication Date |
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CN212516930U true CN212516930U (en) | 2021-02-09 |
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Family Applications (1)
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CN202021342063.2U Active CN212516930U (en) | 2020-07-09 | 2020-07-09 | Low self-inductance DC bus capacitor |
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CN (1) | CN212516930U (en) |
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2020
- 2020-07-09 CN CN202021342063.2U patent/CN212516930U/en active Active
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