CN212077201U - Epitaxial furnace for preparing silicon 8-inch high-power components - Google Patents
Epitaxial furnace for preparing silicon 8-inch high-power components Download PDFInfo
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- CN212077201U CN212077201U CN202020747761.4U CN202020747761U CN212077201U CN 212077201 U CN212077201 U CN 212077201U CN 202020747761 U CN202020747761 U CN 202020747761U CN 212077201 U CN212077201 U CN 212077201U
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- furnace
- furnace body
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- epitaxial
- heating
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 47
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 19
- 239000010439 graphite Substances 0.000 claims abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000002360 preparation method Methods 0.000 claims abstract description 11
- 235000012431 wafers Nutrition 0.000 claims description 21
- 238000007789 sealing Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 8
- 230000008602 contraction Effects 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 239000007921 spray Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The utility model discloses an epitaxial furnace is used in preparation of 8 inches high-power components and parts of silicon, including supporting furnace body and bell, be provided with the graphite base in the furnace body, the bottom of furnace body is provided with the heating structure, the graphite base sets up in the heating structure top, still includes the intake pipe, intake pipe one end stretches into in the furnace body, the tip of intake pipe in the furnace body is provided with the surge chamber, the upper end and the intake pipe intercommunication of surge chamber, lower extreme and the inward contraction form and seal the arch, seal the arch and pass through communicating pipe and air supply injector intercommunication, the air supply injector sets up in graphite base top, the surge chamber adopts the heat conduction material to make. The epitaxial growth of the epitaxial furnace can improve the uniformity of the heating temperature of the substrate wafer.
Description
Technical Field
The utility model relates to an electronic components preparation technical field, concretely relates to epitaxial furnace is used in the preparation of the high-power components and parts of silicon 8 inches.
Background
The semiconductor industry is at the heart of the modern electronics industry and its foundation is silicon material. Large Scale Integrated (LSI)/Very Large Scale Integrated (VLSI)/Ultra Large Scale Integrated (ULSI) circuits are fabricated on high quality silicon single crystal polished wafers and epitaxial silicon wafers. The quality of the epitaxial silicon wafer is therefore of critical importance.
The quality of epitaxial silicon wafers depends primarily on the silicon epitaxial wafer material and the epitaxial process. The epitaxial growth is to place the wafer in an epitaxial furnace and grow by a CVD (chemical vapor deposition) method, specifically to place the substrate in a reaction chamber of the epitaxial furnace, introduce a compound containing a film-forming element and a simple substance gas into the reaction chamber, and deposit a solid film on the surface of the substrate by means of a vapor chemical reaction.
The epitaxial furnace mainly comprises a reaction chamber, wherein a graphite base used for placing a substrate wafer is arranged in the reaction chamber, and a heating structure and a gas source injector are arranged in the reaction chamber.
For the preparation of silicon 8-inch high-power components, the quality requirement on epitaxial silicon wafers is high, and the uniformity of the heating temperature of the substrate wafers needs to be strictly controlled in the epitaxial growth stage.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide an epitaxial furnace is used in the preparation of the high-power components and parts of silicon 8 inches, adopt this epitaxial furnace to carry out epitaxial growth can improve the homogeneity of substrate wafer temperature of being heated.
The utility model discloses a following technical scheme realizes:
epitaxial furnace is used in preparation of 8 inches high-power components and parts of silicon, including supporting furnace body and bell, be provided with graphite base in the furnace body, the bottom of furnace body is provided with heating structure, graphite base sets up in heating structure top, still includes the intake pipe, intake pipe one end stretches into in the furnace body, the tip of intake pipe in the furnace body is provided with the surge chamber, the upper end and the intake pipe intercommunication of surge chamber, lower extreme and the inward contraction form and seal the arch, seal the arch and pass through communicating pipe and air supply injector intercommunication, the air supply injector sets up in graphite base top, the surge chamber adopts the heat conduction material to make.
In the prior art, the air supply entering the air supply injector through the air inlet pipe is usually at normal temperature, the air supply enters the furnace body from the air supply injector and is diffused outwards along the radial direction from the middle part, and because the temperature in the furnace body is high, the air supply is gradually heated in the furnace body, the temperature of the air supply is radially distributed in a gradient manner along the diffusion direction, and the heating temperature unevenness of the substrate wafer is caused.
The sealing bulge of the utility model particularly means that the end part of the bulge is sealed, and the air source injector is communicated with the buffer chamber through the communicating pipe; the heat conduction material is the existing high-temperature-resistant heat conduction material.
The utility model discloses a set up the surge chamber in the furnace body, the air supply gets into in the surge chamber after by the high temperature heating of furnace body again by the air supply injector spray in the furnace body, has reduced air supply and furnace body difference in temperature, and then has alleviated the temperature of air supply and radially be the problem that gradient distributes along the diffusion, has improved the homogeneity of substrate wafer temperature of being heated.
Further, the air source injector comprises an annular pipe, a closed cavity is arranged on the inner side of the annular pipe, the closed cavity and the annular pipe are communicated through a radial through pipe, and a plurality of exhaust holes are formed in the annular pipe, the closed cavity and the radial through pipe.
The gas source injector can improve the uniformity of the gas source entering the furnace body.
Further, the heating structure is resistance heating wire, including a plurality of heating rings, and a plurality of heating rings are arranged along radial inside to outside, connect through the heating rod between a plurality of heating rings.
Resistance heating wire is prior art, can realize the heating to graphite base, and the internal diameter of a plurality of heating rings is different, and from inside to outside sets up with one heart, and resistance heating wire spirals and sets up promptly, improves the homogeneity of heating structure to graphite base heating.
Further, the lower end surface of the graphite base is in contact with the heating structure, and the upper end surface is provided with a plurality of carrying platforms for placing the substrate wafer.
Further, the upper end face of the carrying platform is provided with a plurality of limiting blocks, and the limiting blocks are evenly arranged along the circumferential direction.
The limiting blocks are used for limiting and fixing the substrate wafer, so that the substrate wafer is ensured to be tightly attached to the carrier, and the contact area between the substrate wafer and the graphite base is reduced.
Furthermore, the furnace cover is of a boss structure with a large end and a small end, the outer diameter of the small end of the boss structure is consistent with the inner diameter of the furnace body, and an annular supporting plate matched with the furnace cover is arranged in the furnace body.
The arrangement can realize the connection between the furnace cover and the furnace body
Furthermore, a sealing gasket is arranged at the joint of the boss structure and the furnace body.
The sealing gasket is an annular step structure matched with the boss structure, and the sealing gasket can ensure the sealing between the furnace cover and the furnace body.
Furthermore, the inner diameter of the buffer chamber is 10-20 times of the inner diameter of the air inlet pipe.
On the premise of placing the buffer chamber into the furnace body, the volume of the buffer chamber is increased as much as possible, and the heat transfer effect is improved.
Furthermore, a preheating device is arranged on the air inlet pipe.
The preheating device is in the prior art and can be a resistance heating wire, and the resistance heating wire is sleeved on the outer wall of the air inlet pipe.
The preheating device preheats the air source in the air inlet pipe, so that the heating uniformity of the substrate wafer is further improved.
Compared with the prior art, the utility model, following advantage and beneficial effect have:
the utility model discloses a set up the surge chamber in the furnace body, the air supply gets into in the surge chamber after by the high temperature heating of furnace body again by the air supply injector spray in the furnace body, has reduced air supply and furnace body difference in temperature, and then has alleviated the temperature of air supply and radially be the problem that gradient distributes along the diffusion, has improved the homogeneity of substrate wafer temperature of being heated.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. In the drawings:
FIG. 1 is a schematic structural view of an epitaxial furnace;
FIG. 2 is a schematic diagram of a gas source injector;
fig. 3 is a schematic view of a heating structure.
Reference numbers and corresponding part names in the drawings:
1-furnace body, 2-furnace cover, 3-air inlet pipe, 4-buffer chamber, 5-communicating pipe, 6-air source injector, 7-carrying platform, 8-heating structure, 9-graphite base, 11-annular supporting plate, 61-annular pipe, 62-closed cavity, 63-radial communicating pipe, 71-limiting block, 81-heating ring and 82-heating rod.
Detailed Description
To make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the following examples and drawings, and the exemplary embodiments and descriptions thereof of the present invention are only used for explaining the present invention, and are not intended as limitations of the present invention.
Example 1:
as shown in fig. 1-3, the epitaxial furnace for manufacturing silicon 8-inch high-power components comprises a furnace body 1 and a furnace cover 2 which are matched, wherein a graphite base 9 is arranged in the furnace body 1, a heating structure 8 is arranged at the bottom of the furnace body 1, the graphite base 9 is arranged above the heating structure 8, the epitaxial furnace further comprises an air inlet pipe 3, one end of the air inlet pipe 3 extends into the furnace body 1, a buffer chamber 4 is arranged at the end part of the air inlet pipe 3 in the furnace body 1, the inner diameter of the buffer chamber 4 is 10-20 times of the inner diameter of the air inlet pipe 3, the size of the buffer chamber 4 is slightly smaller than that of the furnace body 1, the buffer chamber 4 can be placed into the furnace body 1, the larger the buffer chamber 4 is, the better the upper end of the buffer chamber 4 is communicated with the air inlet pipe 3, the lower end of the buffer chamber is contracted inwards to form a closed bulge, the closed, the buffer chamber 4 is made of heat conducting materials, the heat conducting materials are made of glass fibers which are existing high-temperature resistant materials, and the buffer chamber can also be made of other high-temperature resistant heat conducting materials.
In this embodiment, through setting up great surge chamber 4 of size, and surge chamber 4 adopts the heat conduction material to make, after the air supply got into surge chamber 4 under the effect of pump, because surge chamber 4 has great space, gaseous diffusion in surge chamber 4, the temperature in furnace body 1 heats the air supply in surge chamber 4 through the heat-resisting material of high temperature, reduce the difference of the gas of 6 sprays of air supply injector and the temperature in furnace body 1, the homogeneity of being heated of each substrate wafer in the improvement furnace body 1.
Example 2:
as shown in fig. 1 to 3, in this embodiment, based on embodiment 1, the gas source injector 6 includes an annular tube 61, a closed cavity 62 is disposed inside the annular tube 61, the closed cavity 62 is communicated with the annular tube 61 through a radial through tube 63, a plurality of exhaust holes are disposed on the annular tube 61, the closed cavity 62 and the radial through tube 63, and the annular tube 61 is communicated with the buffer chamber 4 through a communicating tube 5; heating structure 8 is resistance heating wire, including a plurality of heating rings 81, and a plurality of heating rings 81 are arranged along radial from inside to outside, connect through heater rod 82 between a plurality of heating rings 81, be provided with preheating device on the intake pipe 3.
Example 3:
as shown in fig. 1 to 3, in the present embodiment, based on embodiment 1, the lower end surface of the graphite susceptor 9 is in contact with the heating structure 8, and the upper end surface is provided with a plurality of stages 7 for placing substrate wafers; the upper end surface of the carrier 7 is provided with 4 limiting blocks 71, and the 4 limiting blocks 71 are uniformly arranged along the circumferential direction.
Example 4:
as shown in fig. 1 to 3, in this embodiment, based on any one of embodiments 1 to 3, the furnace cover 2 is a boss structure with a larger end and a smaller end, the outer diameter of the smaller end of the boss structure is consistent with the inner diameter of the furnace body 1, and an annular support plate 11 matched with the furnace cover 2 is arranged in the furnace body 1; and a sealing gasket is arranged at the joint of the boss structure and the furnace body 1.
In the present embodiment, sealing between the furnace lid 2 and the furnace body 1 can be achieved.
The above-mentioned embodiments, further detailed description of the objects, technical solutions and advantages of the present invention, it should be understood that the above description is only the embodiments of the present invention, and is not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. An epitaxial furnace for preparing silicon 8-inch high-power components comprises a furnace body (1) and a furnace cover (2) which are matched, a graphite base (9) is arranged in the furnace body (1), a heating structure (8) is arranged at the bottom of the furnace body (1), the graphite base (9) is arranged above the heating structure (8) and also comprises an air inlet pipe (3), one end of the air inlet pipe (3) extends into the furnace body (1), it is characterized in that the end part of the air inlet pipe (3) in the furnace body (1) is provided with a buffer chamber (4), the upper end of the buffer chamber (4) is communicated with the air inlet pipe (3), the lower end of the buffer chamber is contracted inwards to form a closed bulge, the closed bulge is communicated with an air source injector (6) through a communicating pipe (5), the gas source injector (6) is arranged above the graphite base (9), and the buffer chamber (4) is made of heat conducting materials.
2. The epitaxial furnace for preparing the silicon 8-inch high-power component as claimed in claim 1, wherein the gas source injector (6) comprises an annular tube (61), a closed cavity (62) is arranged on the inner side of the annular tube (61), the closed cavity (62) is communicated with the annular tube (61) through a radial through tube (63), and a plurality of exhaust holes are formed in the annular tube (61), the closed cavity (62) and the radial through tube (63).
3. Epitaxial furnace for the preparation of silicon 8-inch high-power components according to claim 1, characterized in that the heating structure (8) is a resistance heating wire comprising a plurality of heating rings (81), the plurality of heating rings (81) are arranged from inside to outside along the radial direction, and the plurality of heating rings (81) are connected with each other by heating rods (82).
4. The epitaxial furnace for silicon 8-inch high-power component preparation according to claim 1, wherein the graphite susceptor (9) is in contact with the heating structure (8) at its lower end surface and is provided at its upper end surface with a plurality of stages (7) for placing substrate wafers.
5. The epitaxial furnace for silicon 8-inch high-power component preparation according to claim 4, wherein a plurality of limiting blocks (71) are arranged on the upper end face of the carrier (7), and the limiting blocks (71) are uniformly arranged along the circumferential direction.
6. The epitaxial furnace for manufacturing silicon 8-inch high-power components according to claim 1, wherein the furnace cover (2) is a boss structure with a large end and a small end, the outer diameter of the small end of the boss structure is consistent with the inner diameter of the furnace body (1), and an annular support plate (11) matched with the furnace cover (2) is arranged in the furnace body (1).
7. The epitaxial furnace for manufacturing silicon 8-inch high-power components and parts according to claim 6, wherein a sealing gasket is arranged at the joint of the boss structure and the furnace body (1).
8. The epitaxial furnace for silicon 8-inch high-power component preparation according to claim 1, wherein the inner diameter of the buffer chamber (4) is 10-20 times the inner diameter of the gas inlet pipe (3).
9. Epitaxial furnace for the preparation of silicon 8-inch high-power components according to any of claims 1 to 8, characterized in that the inlet pipe (3) is provided with a preheating device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020747761.4U CN212077201U (en) | 2020-05-08 | 2020-05-08 | Epitaxial furnace for preparing silicon 8-inch high-power components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020747761.4U CN212077201U (en) | 2020-05-08 | 2020-05-08 | Epitaxial furnace for preparing silicon 8-inch high-power components |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212077201U true CN212077201U (en) | 2020-12-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020747761.4U Expired - Fee Related CN212077201U (en) | 2020-05-08 | 2020-05-08 | Epitaxial furnace for preparing silicon 8-inch high-power components |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212077201U (en) |
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2020
- 2020-05-08 CN CN202020747761.4U patent/CN212077201U/en not_active Expired - Fee Related
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Granted publication date: 20201204 |
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| CF01 | Termination of patent right due to non-payment of annual fee |