CN211681557U - 一种大尺寸硅圆片减薄装置 - Google Patents
一种大尺寸硅圆片减薄装置 Download PDFInfo
- Publication number
- CN211681557U CN211681557U CN201922000766.0U CN201922000766U CN211681557U CN 211681557 U CN211681557 U CN 211681557U CN 201922000766 U CN201922000766 U CN 201922000766U CN 211681557 U CN211681557 U CN 211681557U
- Authority
- CN
- China
- Prior art keywords
- grinding wheel
- silicon wafer
- seat
- groove
- disk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 125
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 125
- 239000010703 silicon Substances 0.000 title claims abstract description 125
- 229910001651 emery Inorganic materials 0.000 claims abstract description 16
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000013461 design Methods 0.000 abstract description 4
- 238000012423 maintenance Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 88
- 238000000034 method Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 235000012046 side dish Nutrition 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201922000766.0U CN211681557U (zh) | 2019-11-19 | 2019-11-19 | 一种大尺寸硅圆片减薄装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201922000766.0U CN211681557U (zh) | 2019-11-19 | 2019-11-19 | 一种大尺寸硅圆片减薄装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN211681557U true CN211681557U (zh) | 2020-10-16 |
Family
ID=72787378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201922000766.0U Active CN211681557U (zh) | 2019-11-19 | 2019-11-19 | 一种大尺寸硅圆片减薄装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN211681557U (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110842762A (zh) * | 2019-11-19 | 2020-02-28 | 天津中环领先材料技术有限公司 | 一种大尺寸硅圆片减薄装置及其减薄工艺 |
-
2019
- 2019-11-19 CN CN201922000766.0U patent/CN211681557U/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110842762A (zh) * | 2019-11-19 | 2020-02-28 | 天津中环领先材料技术有限公司 | 一种大尺寸硅圆片减薄装置及其减薄工艺 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7288207B2 (en) | Etching liquid for controlling silicon wafer surface shape and method for manufacturing silicon wafer using the same | |
US7601644B2 (en) | Method for manufacturing silicon wafers | |
US7648890B2 (en) | Process for producing silicon wafer | |
EP1808887B1 (en) | Production method of semiconductor wafer | |
US9550264B2 (en) | Fixed abrasive-grain processing device, method of fixed abrasive-grain processing, and method for producing semiconductor wafer | |
US8409992B2 (en) | Method for producing a polished semiconductor wafer | |
TWI445125B (zh) | A method of manufacturing a two-head grinding apparatus and a wafer | |
US20090311863A1 (en) | Method for producing semiconductor wafer | |
JP2009302408A (ja) | 半導体ウェーハの製造方法 | |
US5941759A (en) | Lapping method using upper and lower lapping turntables | |
CN105612605A (zh) | 镜面研磨晶圆的制造方法 | |
CN110842762A (zh) | 一种大尺寸硅圆片减薄装置及其减薄工艺 | |
CN211681557U (zh) | 一种大尺寸硅圆片减薄装置 | |
CN210837763U (zh) | 一种大尺寸硅圆片 | |
CN109571232B (zh) | 晶圆研磨方法及其研磨系统 | |
JP4103808B2 (ja) | ウエーハの研削方法及びウエーハ | |
JP4149295B2 (ja) | ラップ盤 | |
US8673784B2 (en) | Method for producing silicon epitaxial wafer | |
JP4781654B2 (ja) | 研磨クロス及びウェーハ研磨装置 | |
JP3514108B2 (ja) | ラッピング装置及び方法 | |
KR100827574B1 (ko) | 실리콘 웨이퍼의 제조 방법 | |
JP7168113B1 (ja) | ウェーハの両面研磨方法 | |
CN213673546U (zh) | 一种晶片研磨装置 | |
JP2009269150A (ja) | 研磨布用ドレッシングプレート及び研磨布のドレッシング方法並びに半導体基板の研磨方法 | |
KR20140091188A (ko) | 연마패드 드레싱 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information |
Inventor after: Pei Kunyu Inventor after: Xie Yan Inventor after: Yang Chunxue Inventor after: Liu Miao Inventor after: Chang Xueyan Inventor after: Lv Ying Inventor after: Xu Rongqing Inventor after: Zhu Bin Inventor after: Liu Jiaolong Inventor after: Wu Wei Inventor after: Sun Chenguang Inventor after: Liu Jianwei Inventor after: Wang Juan Inventor after: You Bailing Inventor after: Liu Yuan Inventor before: Pei Kunyu Inventor before: Xie Yan Inventor before: Yang Chunxue Inventor before: Liu Miao Inventor before: Chang Xueyan Inventor before: Lv Ying Inventor before: Xu Rongqing Inventor before: Zhu Bin Inventor before: Liu Jiaolong Inventor before: Wu Wei Inventor before: Sun Chenguang Inventor before: Liu Jianwei Inventor before: Wang Juan Inventor before: You Bailing Inventor before: Liu Yuan |
|
CB03 | Change of inventor or designer information | ||
CP03 | Change of name, title or address |
Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 inside. Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region after: China Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: No.12 Haitai East Road, Huayuan Industrial Zone, Binhai New Area, Tianjin Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region before: China Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. |
|
CP03 | Change of name, title or address |