CN211350648U - 发光元件 - Google Patents
发光元件 Download PDFInfo
- Publication number
- CN211350648U CN211350648U CN201921886775.8U CN201921886775U CN211350648U CN 211350648 U CN211350648 U CN 211350648U CN 201921886775 U CN201921886775 U CN 201921886775U CN 211350648 U CN211350648 U CN 211350648U
- Authority
- CN
- China
- Prior art keywords
- light
- pattern
- emitting part
- light emitting
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002161 passivation Methods 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims description 87
- 239000000853 adhesive Substances 0.000 claims description 14
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 238000000605 extraction Methods 0.000 claims description 13
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims 1
- 239000004033 plastic Substances 0.000 claims 1
- 229920002050 silicone resin Polymers 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 description 40
- 108091093018 PVT1 Proteins 0.000 description 17
- 238000000034 method Methods 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 238000000254 composite pulse decoupling sequence Methods 0.000 description 9
- 229910002601 GaN Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229920006336 epoxy molding compound Polymers 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 229920000106 Liquid crystal polymer Polymers 0.000 description 4
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 4
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 4
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 4
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 239000005033 polyvinylidene chloride Substances 0.000 description 4
- 229910052703 rhodium Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 239000004696 Poly ether ether ketone Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052789 astatine Inorganic materials 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920002313 fluoropolymer Polymers 0.000 description 3
- 239000004811 fluoropolymer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- -1 polydimethylsiloxane Polymers 0.000 description 3
- 229920002530 polyetherether ketone Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920001486 SU-8 photoresist Polymers 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 2
- WHEATZOONURNGF-UHFFFAOYSA-N benzocyclobutadiene Chemical compound C1=CC=C2C=CC2=C1 WHEATZOONURNGF-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 2
- 229920000412 polyarylene Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910016909 AlxOy Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910003070 TaOx Inorganic materials 0.000 description 1
- 229910010421 TiNx Inorganic materials 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/032—Manufacture or treatment of electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/034—Manufacture or treatment of coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862755652P | 2018-11-05 | 2018-11-05 | |
| US62/755,652 | 2018-11-05 | ||
| US16/670,293 US11158665B2 (en) | 2018-11-05 | 2019-10-31 | Light emitting device |
| US16/670,293 | 2019-10-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211350648U true CN211350648U (zh) | 2020-08-25 |
Family
ID=70459099
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921886775.8U Active CN211350648U (zh) | 2018-11-05 | 2019-11-04 | 发光元件 |
| CN201980072379.8A Active CN112970119B (zh) | 2018-11-05 | 2019-11-04 | 发光元件 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980072379.8A Active CN112970119B (zh) | 2018-11-05 | 2019-11-04 | 发光元件 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US11158665B2 (https=) |
| EP (1) | EP3879576A4 (https=) |
| JP (1) | JP7444873B2 (https=) |
| KR (1) | KR20210073536A (https=) |
| CN (2) | CN211350648U (https=) |
| BR (1) | BR112021008682A2 (https=) |
| WO (1) | WO2020096304A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112970119A (zh) * | 2018-11-05 | 2021-06-15 | 首尔伟傲世有限公司 | 发光元件 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11211528B2 (en) * | 2019-03-13 | 2021-12-28 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
| DE102019119891A1 (de) * | 2019-07-23 | 2021-01-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips |
| US11437353B2 (en) * | 2019-11-15 | 2022-09-06 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
| CN213071133U (zh) * | 2019-11-15 | 2021-04-27 | 首尔伟傲世有限公司 | 显示器用发光元件及显示装置 |
| CN111433921B (zh) * | 2019-12-16 | 2023-08-15 | 厦门三安光电有限公司 | 一种发光二极管 |
| US11862616B2 (en) * | 2020-02-26 | 2024-01-02 | Seoul Viosys Co., Ltd. | Multi wavelength light emitting device and method of fabricating the same |
| US12040344B2 (en) * | 2020-05-28 | 2024-07-16 | Seoul Viosys Co., Ltd. | Light emitting device and display apparatus having the same |
| JP7613127B2 (ja) * | 2021-01-22 | 2025-01-15 | セイコーエプソン株式会社 | 発光装置、プロジェクター |
| US12317646B2 (en) * | 2021-04-27 | 2025-05-27 | Samsung Electronics Co., Ltd. | Light-emitting device and display apparatus including the same |
| KR102698833B1 (ko) * | 2021-11-08 | 2024-08-27 | 루미레즈 엘엘씨 | 비중첩 세그먼트화를 갖는 이중 접합 led |
| KR102599275B1 (ko) * | 2022-01-25 | 2023-11-07 | 주식회사 썬다이오드코리아 | 수직 적층 구조를 가지는 마이크로 디스플레이의 화소 |
| US12444716B2 (en) | 2022-03-21 | 2025-10-14 | Lextar Electronics Corporation | Light-emitting diode device |
| KR20260050706A (ko) * | 2024-10-08 | 2026-04-15 | 삼성전자주식회사 | 발광 소자, 이를 포함하는 디스플레이 장치 및 그 제조 방법 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07254732A (ja) * | 1994-03-15 | 1995-10-03 | Toshiba Corp | 半導体発光装置 |
| JP4214704B2 (ja) * | 2002-03-20 | 2009-01-28 | 日亜化学工業株式会社 | 半導体素子 |
| US7271420B2 (en) | 2004-07-07 | 2007-09-18 | Cao Group, Inc. | Monolitholic LED chip to emit multiple colors |
| KR20060023634A (ko) * | 2004-09-10 | 2006-03-15 | (주)케이디티 | 전면 유기 발광 소자 및 그 제조방법 |
| KR100740309B1 (ko) * | 2005-01-10 | 2007-07-18 | (주)케이디티 | 휘어질 수 있는 풀 칼라 유기 발광 디스플레이 및 그제조방법 |
| JP2008277176A (ja) | 2007-05-01 | 2008-11-13 | Hitachi Maxell Ltd | 光学デバイス、及び液晶表示装置 |
| CN201134433Y (zh) * | 2007-12-11 | 2008-10-15 | 鑫谷光电股份有限公司 | 发多色光的半导体二极管芯片 |
| TWI508321B (zh) * | 2008-07-21 | 2015-11-11 | 相豐科技股份有限公司 | 發光二極體及其形成方法 |
| JP5185308B2 (ja) * | 2010-03-09 | 2013-04-17 | 株式会社東芝 | 半導体発光装置の製造方法 |
| CN102593303A (zh) * | 2011-01-05 | 2012-07-18 | 晶元光电股份有限公司 | 具有栓塞的发光元件 |
| US9293641B2 (en) * | 2011-11-18 | 2016-03-22 | Invensas Corporation | Inverted optical device |
| JP5684751B2 (ja) | 2012-03-23 | 2015-03-18 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| KR101961307B1 (ko) * | 2012-06-08 | 2019-03-25 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지 및 라이트 유닛 |
| TWI572068B (zh) * | 2012-12-07 | 2017-02-21 | 晶元光電股份有限公司 | 發光元件 |
| JP6127468B2 (ja) | 2012-11-22 | 2017-05-17 | 日亜化学工業株式会社 | 発光装置 |
| US9444019B1 (en) * | 2015-09-21 | 2016-09-13 | Epistar Corporation | Method for reusing a substrate for making light-emitting device |
| KR102406606B1 (ko) | 2015-10-08 | 2022-06-09 | 삼성디스플레이 주식회사 | 유기 발광 소자, 이를 포함하는 유기 발광 표시 장치, 및 이의 제조 방법 |
| KR20170052738A (ko) * | 2015-11-03 | 2017-05-15 | 삼성전자주식회사 | 반도체 발광소자 |
| CN108473868B (zh) * | 2015-12-23 | 2021-07-09 | Lg伊诺特有限公司 | 荧光体组合物、包括该荧光体组合物的发光器件封装和照明装置 |
| DE102016104280A1 (de) * | 2016-03-09 | 2017-09-14 | Osram Opto Semiconductors Gmbh | Bauelement und Verfahren zur Herstellung eines Bauelements |
| KR102513080B1 (ko) * | 2016-04-04 | 2023-03-24 | 삼성전자주식회사 | Led 광원 모듈 및 디스플레이 장치 |
| JP2018120959A (ja) | 2017-01-25 | 2018-08-02 | パナソニックＩｐマネジメント株式会社 | 発光装置及び照明装置 |
| US10892296B2 (en) * | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting device having commonly connected LED sub-units |
| US11527519B2 (en) * | 2017-11-27 | 2022-12-13 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
| US10748881B2 (en) * | 2017-12-05 | 2020-08-18 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
| US11158665B2 (en) * | 2018-11-05 | 2021-10-26 | Seoul Viosys Co., Ltd. | Light emitting device |
-
2019
- 2019-10-31 US US16/670,293 patent/US11158665B2/en active Active
- 2019-11-04 JP JP2021522966A patent/JP7444873B2/ja active Active
- 2019-11-04 EP EP19881618.3A patent/EP3879576A4/en active Pending
- 2019-11-04 BR BR112021008682A patent/BR112021008682A2/pt active Search and Examination
- 2019-11-04 KR KR1020217011688A patent/KR20210073536A/ko active Pending
- 2019-11-04 CN CN201921886775.8U patent/CN211350648U/zh active Active
- 2019-11-04 CN CN201980072379.8A patent/CN112970119B/zh active Active
- 2019-11-04 WO PCT/KR2019/014824 patent/WO2020096304A1/ko not_active Ceased
-
2021
- 2021-09-10 US US17/471,836 patent/US12087804B2/en active Active
-
2024
- 2024-08-13 US US18/803,364 patent/US20240405055A1/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112970119A (zh) * | 2018-11-05 | 2021-06-15 | 首尔伟傲世有限公司 | 发光元件 |
| CN112970119B (zh) * | 2018-11-05 | 2024-10-29 | 首尔伟傲世有限公司 | 发光元件 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20210408101A1 (en) | 2021-12-30 |
| CN112970119A (zh) | 2021-06-15 |
| BR112021008682A2 (pt) | 2021-11-09 |
| WO2020096304A1 (ko) | 2020-05-14 |
| US11158665B2 (en) | 2021-10-26 |
| EP3879576A4 (en) | 2022-08-03 |
| CN112970119B (zh) | 2024-10-29 |
| EP3879576A1 (en) | 2021-09-15 |
| US12087804B2 (en) | 2024-09-10 |
| KR20210073536A (ko) | 2021-06-18 |
| US20240405055A1 (en) | 2024-12-05 |
| JP2022505883A (ja) | 2022-01-14 |
| US20200144326A1 (en) | 2020-05-07 |
| JP7444873B2 (ja) | 2024-03-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN211350648U (zh) | 发光元件 | |
| CN210743981U (zh) | 发光元件 | |
| KR102733455B1 (ko) | 발광 소자 | |
| CN210743973U (zh) | 发光元件 | |
| CN210837758U (zh) | 发光元件 | |
| JP7390364B2 (ja) | 発光装置 | |
| US12009466B2 (en) | Light emitting device | |
| BR122025021511A2 (pt) | Dispositivo emissor de luz |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |