CN210876527U - Device for controlling concentration of chemical liquid for silicon polished wafer cleaning machine - Google Patents

Device for controlling concentration of chemical liquid for silicon polished wafer cleaning machine Download PDF

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Publication number
CN210876527U
CN210876527U CN201921506066.2U CN201921506066U CN210876527U CN 210876527 U CN210876527 U CN 210876527U CN 201921506066 U CN201921506066 U CN 201921506066U CN 210876527 U CN210876527 U CN 210876527U
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hydrogen peroxide
concentration
pipeline
ammonia water
tank
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熊诚雷
郭可
张倩
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Mesk Electronic Materials Co., Ltd
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MCL Electronic Materials Ltd
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Abstract

The utility model discloses a device for controlling chemical liquid concentration of silicon polishing piece cleaning machine, including two liang of washing tanks, circulation pipeline, fluid infusion pipeline that are linked together, the washing tank comprises the inside groove, the outer tank that set up mutually inlayed, the circulation pipeline comprises circulating pump, filter, heater, fluid infusion pipeline comprises aqueous ammonia densimeter, hydrogen peroxide solution densimeter, control module group, aqueous ammonia measuring pump, hydrogen peroxide solution measuring pump, and the outlet pipeline of aqueous ammonia measuring pump, hydrogen peroxide solution measuring pump all inserts in the inside groove; the device can accurately and effectively control the concentration of chemicals in the cleaning liquid, realize excellent removal efficiency of particle impurities on the surface of the silicon wafer and product quality, improve the cleaning effect of the cleaning machine on the silicon wafer, and realize the requirement of high cleanliness of the surface of a polished silicon wafer; the silicon wafer cleaning machine achieves excellent particle removal effect and product quality on the surface of the silicon wafer. The product yield is improved, the economic loss is reduced, and the working efficiency is obviously improved.

Description

Device for controlling concentration of chemical liquid for silicon polished wafer cleaning machine
Technical Field
The utility model belongs to the technical field of the processing of monocrystalline silicon polished section, relate to the equipment among the silicon chip cleaning technology, in particular to a device that is used for control chemical liquid concentration of silicon polished section cleaning machine.
Background
The silicon wafer is a widely used semiconductor material, the surface of the silicon wafer is seriously polluted in production and processing, the surface cleanliness of the polished silicon wafer is one of the most critical quality parameters of products, and even the existence of trace pollution of submicron level can cause the processing failure of subsequent circuit devices. After the silicon wafer is subjected to chemical mechanical mirror polishing, impurity particles, metal ions and organic pollutants caused by a polished silicon wafer, polishing liquid, polishing wax, polishing cloth and an atmospheric environment are remained on the surface of the silicon wafer, and the pollutants on the surface of the silicon wafer are removed by wet cleaning to meet the requirement of ultra-cleanliness of the silicon wafer.
The tank type cleaning machine is a silicon wafer wet cleaning machine table which is commonly used in the industry and consists of a plurality of chemical liquid cleaning tanks, a pure water tank and a dryer. At present, the RCA cleaning technology commonly used in the industry adopts a plurality of standard No. one liquid (SC-1 for English abbreviation) and standard No. two liquid (SC-2 for English abbreviation) to clean the surface of a silicon wafer, and respectively removes surface particles and metal ion pollution. The SC-1 solution is prepared from ammonia water, hydrogen peroxide and pure water according to a certain proportion, and the silicon wafer is cleaned at 50-70 ℃ to achieve the purpose of removing particles. The silicon wafer is cleaned by using electronic grade chemicals, the price is high, in order to save the using amount of the chemicals, the cleaning cost is reduced, the service life of a cleaning solution generally reaches several hours, however, the wet cleaning effect of the silicon wafer has great dependence on the concentration of the cleaning solution, a silicon atom thin layer on the surface of the silicon wafer is corroded and stripped by ammonia water, and then particle impurities can be effectively removed, but due to the corrosion effect of the ammonia water, the micro roughness on the surface of the silicon wafer is bound to be influenced, hydrogen peroxide hinders the corrosion of the ammonia water on the silicon wafer, the surface of the silicon wafer is subjected to oxidation protection, excessive corrosion is prevented, and excessively concentrated hydrogen peroxide can hinder the removal of particles, so that the silicon wafer is not cleaned completely.
The temperature rise of the cleaning solution is beneficial to removing particle impurities on the surface of the silicon wafer, but the temperature rise also can enhance the volatility of the ammonia water, the concentration of the ammonia water is rapidly reduced, and the cleaning efficiency is reduced; in addition, the reaction of the cleaning solution with the silicon wafer also causes the concentration of the chemicals to decrease, so that the timely supplement of fresh chemical solution is important for maintaining the concentration of the chemicals in the cleaning tank.
The existing chemical liquid supplementing scheme is that chemical liquid is supplemented at regular time or in fixed quantity (the number of groups for cleaning silicon wafers) in a cleaning machine control program, the concentration of volatilization loss of chemicals at high temperature is supplemented in a regular liquid supplementing mode, but the number of groups for cleaning the silicon wafers in a period of time is not fixed, and the concentration reduction caused by the reaction of the chemicals and the silicon wafers cannot be considered in the mode; the quantitative liquid supplementing mode makes up for the concentration reduction caused by the reaction of chemicals and silicon wafers, but cannot give consideration to the concentration reduction of self volatilization of the chemicals at high temperature. In summary, both of these methods bring about large fluctuation of chemical concentration, which causes problems of decrease in particle impurity removal efficiency or increase in surface roughness, and decrease in product quality.
For overcoming the problem that prior art is coarse to chemical concentration control, the utility model discloses a can accurate control silicon polished wafer cleaning machine chemical liquid concentration's device is disclosed, in order to realize the accurate control to chemical concentration, use the concentration meter to carry out online sampling measurement to the chemical liquid concentration in the washing tank, the measuring result feeds back to control module group, be less than preset's concentration lower limit when chemical liquid actual concentration, chemical liquid supply measuring pump is opened to control module group, carry out the fluid infusion according to setting for the dosage, reach the stability that keeps solution concentration.
SUMMERY OF THE UTILITY MODEL
In view of this, for solving the not enough of above-mentioned prior art, the utility model aims at providing a device of control chemical liquid concentration for silicon polished wafer cleaning machine can the effective control silicon polished wafer cleaning machine washing tank in the concentration of chemical liquid, improve the cleaning performance of cleaning machine to the silicon chip, realize the high cleanliness requirement on silicon polished wafer surface.
In order to achieve the above object, the utility model adopts the following technical scheme:
a device for controlling the concentration of chemical liquid for a silicon polished wafer cleaning machine comprises two cleaning tanks, a circulating pipeline and a liquid supplementing pipeline which are communicated with each other, wherein each cleaning tank consists of an inner tank and an outer tank which are embedded with each other, the circulating pipeline consists of a circulating pump, a filter and a heater, the liquid supplementing pipeline consists of an ammonia water concentration meter, a hydrogen peroxide concentration meter, a control module, an ammonia water metering pump and a hydrogen peroxide metering pump, and outlet pipelines of the ammonia water metering pump and the hydrogen peroxide metering pump are connected into the inner tanks;
the SC-1 solution flows into the circulating pipeline from the outer tank of the cleaning tank, circularly enters the inner tank after passing through the circulating pump, the filter and the heater, the ammonia water concentration meter and the hydrogen peroxide concentration meter of the liquid supplementing pipeline respectively perform sampling test on ammonia water and hydrogen peroxide in the SC-1 solution, the tested concentration values are fed back to the control module, and the control module issues an instruction to start or stop the ammonia water metering pump and the hydrogen peroxide metering pump.
Further, after the ammonia water metering pump and the hydrogen peroxide metering pump are started through instructions, the ammonia water metering pump and the hydrogen peroxide metering pump supplement chemical liquid according to preset dosage, and the purpose of maintaining the concentration of ammonia water and hydrogen peroxide in the SC-1 solution is achieved.
Furthermore, the sampling time interval of the ammonia water concentration meter and the hydrogen peroxide concentration meter is set in the control module.
Furthermore, the bottom of the outer tank is connected with an inlet of a circulating pipeline, and the bottom of the inner tank is connected with an outlet of the circulating pipeline.
Further, the circulation pump is disposed near an inlet of the circulation line, and the heater is disposed near an outlet of the circulation line.
Furthermore, the circulating pipeline is connected with the liquid supplementing pipeline through a branch.
Furthermore, an ammonia water concentration meter and a hydrogen peroxide concentration meter of the liquid supplementing pipeline are respectively connected with the circulating pipeline through branches.
Further, the ammonia water concentration meter and the hydrogen peroxide concentration meter are respectively connected with a liquid discharge pipeline through liquid discharge pipes.
Further, the control module is a PLC controller.
The utility model has the advantages that:
the utility model discloses a device for controlling chemical liquid concentration of a silicon polished wafer cleaning machine, which can accurately and effectively control the concentration of chemicals in cleaning liquid, realize excellent removal efficiency of particle impurities on the surface of a silicon wafer and improve the cleaning effect of the cleaning machine on the silicon wafer by product quality, and realize the requirement of high cleanliness of the surface of the silicon polished wafer;
the utility model comprises a cleaning tank, a circulation pipeline and a fluid infusion pipeline which are communicated with each other two by two, and the three are mutually matched and tightly connected, thereby completing the high-efficiency and accurate working process; two concentration meters are regularly sampled and are measured ammonia water and hydrogen peroxide respectively in washing tank and the circulating line to feed back the concentration value to control module group, control module group judges the concentration size, issues the instruction as required and opens corresponding measuring pump, replenishes solution in the washing tank, maintains the concentration stability of chemicals in the washing liquid. The utility model relates to a simply, installation convenient operation, the security performance is good, and economical and practical has realized that silicon chip cleaning machine gets rid of effect and product quality to silicon chip surface good granule. The product yield is improved, the economic loss is reduced, and the working efficiency is obviously improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural view of the present invention;
the labels in the figure are: 1. the device comprises an inner groove, 2 an outer groove, 3 a circulating pump, 4 a filter, 5 a heater, 6 an ammonia water concentration meter, 7 a hydrogen peroxide concentration meter, 8 a control module, 9 an ammonia water metering pump, 10 a hydrogen peroxide metering pump.
Detailed Description
The following provides specific embodiments, which will further clearly, completely and specifically explain the technical solutions of the present invention. The present embodiment is the best embodiment based on the technical solution of the present invention, but the scope of the present invention is not limited to the following embodiments.
A device for controlling the concentration of chemical liquid for a silicon polished wafer cleaning machine comprises two cleaning tanks, a circulating pipeline and a liquid supplementing pipeline which are communicated with each other, wherein each cleaning tank comprises an inner tank 1 and an outer tank 2 which are embedded with each other, the circulating pipeline comprises a circulating pump 3, a filter 4 and a heater 5, the liquid supplementing pipeline comprises an ammonia water concentration meter 6, a hydrogen peroxide concentration meter 7, a control module 8, an ammonia water metering pump 9 and a hydrogen peroxide metering pump 10, and outlet pipelines of the ammonia water metering pump 9 and the hydrogen peroxide metering pump 10 are connected into the inner tank 1; the cleaning tank, the circulating pipeline and the liquid supplementing pipeline are matched and tightly connected with each other, so that the efficient and accurate working process is completed;
the SC-1 solution flows into the circulating pipeline from the outer tank 2 of the cleaning tank, circularly enters the inner tank 1 after passing through the circulating pump 3, the filter 4 and the heater 5, the ammonia water concentration meter 6 and the hydrogen peroxide concentration meter 7 of the liquid supplementing pipeline respectively perform sampling tests on ammonia water and hydrogen peroxide in the SC-1 solution, the tested concentration values are fed back to the control module 8, and the control module 8 issues instructions to start or stop the ammonia water metering pump 9 and the hydrogen peroxide metering pump 10. Further, if the concentration value of a certain chemical liquid is lower than the preset lower concentration limit, the control module starts a metering pump of the corresponding chemical liquid through an instruction, and the metering pump supplements the chemical liquid according to the preset dosage, so that the concentrations of ammonia and hydrogen peroxide in the SC-1 solution are maintained.
Furthermore, the bottom of the outer tank 2 is connected with an inlet of a circulating pipeline, and the bottom of the inner tank 1 is connected with an outlet of the circulating pipeline. The circulation line pressurizes, filters, heats the SC-1 solution cleaned in the outer tank 2, and then circulates back to the inner tank 1 for reuse.
Further, the circulation pump 3 is disposed near an inlet of the circulation line, and the heater 5 is disposed near an outlet of the circulation line. The circulating pump 3 plays a role in pressurizing, and because particles on the surface of the silicon wafer fall off and are dispersed in the solution, the filter 4 plays a role in intercepting and filtering particle impurities in the solution, so that the solution flowing back to the inner groove again is relatively clean; the heater 5 plays a role in heating the solution, the solution in the outer tank 2 sequentially passes through the circulating pump 3, the filter 4 and the heater 5 and then enters the bottom of the inner tank 1, and the recycling of the SC-1 solution is realized.
Furthermore, the circulating pipeline is connected with the liquid supplementing pipeline through a branch.
Further, an ammonia water concentration meter 6 and a hydrogen peroxide concentration meter 7 of the liquid supplementing pipeline are respectively connected with the circulating pipeline through branch circuits. And an ammonia water concentration meter 6 and a hydrogen peroxide concentration meter 7 collect SC-1 solutions in the circulating pipeline and the outer tank 1 in real time.
Further, the ammonia water concentration meter 6 and the hydrogen peroxide concentration meter 7 are respectively connected with a liquid discharge pipeline through liquid discharge pipes. The residual liquid can be discharged into a liquid discharge pipeline in time for discharge in the convenient sampling test, and the next measurement is not influenced.
Further, in this embodiment, the control module 8 is a PLC controller, and is simple, accurate, and efficient, and performs real-time processing and judgment on the sampling data, and issues commands in a classified manner.
Further, the sampling time interval of the ammonia water concentration meter 6 and the hydrogen peroxide concentration meter 7 is set in the control module 8. The automatic control system has the advantages that real-time sampling and accurate control are realized, the defects that the concentration of chemical liquid in the existing cleaning tank is uncontrollable, inaccurate in control, waste and the like, and a silicon polishing piece is seriously influenced are better solved, the concentration of the chemical liquid in the cleaning tank of the silicon wafer cleaning machine is effectively controlled, the cleaning effect of the cleaning machine on the silicon wafer is improved, and the requirement of high cleanliness of the surface of the silicon polishing piece is met.
Further, after the control module 8 starts the ammonia water metering pump 9 and the hydrogen peroxide metering pump 10 through instructions, the ammonia water metering pump 9 and the hydrogen peroxide metering pump 10 supplement chemical liquid according to preset dosage, so as to maintain the concentration of ammonia water and hydrogen peroxide in the SC-1 solution. Further, the control module 8 judges by collecting the test value: if the concentration value of a certain chemical liquid is lower than the preset lower concentration limit, the control module 8 starts a metering pump of the corresponding chemical liquid through an instruction, the metering pump supplements the chemical liquid according to the preset dosage, the concentration of ammonia water and hydrogen peroxide in the SC-1 solution is maintained, the control module is accurate and efficient, the requirement of effectively controlling the concentration of the chemical liquid in the cleaning tank of the silicon polished wafer cleaning machine is met, and the control module is energy-saving, environment-friendly and recyclable.
The working process of the utility model is as follows:
a mixed solution of ammonia water, hydrogen peroxide and pure water, namely an SC-1 solution, is prepared in an inner tank 1 of the cleaning tank according to the process requirements, the solution overflows to an outer tank 2 through the upper edge of the inner tank 1, and the bottom of the outer tank 2 is connected with a circulating pipeline. The circulating pipeline consists of a circulating pump 3, a filter 4 and a heater group 5, the circulating pump 3 plays a role in pressurizing, particles on the surface of the silicon wafer fall off and are dispersed in the solution, and the filter 4 plays a role in intercepting and filtering particle impurities in the solution, so that the solution flowing back to the inner groove 1 again is relatively clean; the heater 5 plays a role in heating the solution, the solution in the outer tank 2 sequentially passes through the circulating pump 3, the filter 4 and the heater 5 and then enters the bottom of the inner tank 1, so that the recycling of the SC-1 solution is realized;
the circulating pipeline is connected with a liquid supplementing pipeline, and the liquid supplementing pipeline is composed of an ammonia water concentration meter 6, a hydrogen peroxide concentration meter 7, a control module 8, a hydrogen peroxide metering pump 9 and an ammonia water metering pump 10. The solution enters an ammonia water concentration meter 6, the ammonia water concentration meter 6 periodically samples and measures the concentration of ammonia water in the solution, and after the test is finished, the test residual liquid is discharged without influencing the next measurement. The measured concentration value is fed back to the control module 8, if the concentration is lower than the set lower limit of the ammonia water concentration, the control module 8 gives an instruction to start the ammonia water metering pump 9, and the ammonia water metering pump 9 supplements the ammonia water into the inner tank 1 according to the set dosage; if the concentration is higher than the lower limit of the ammonia water concentration setting range, the ammonia water metering pump does not work. Similarly, the supplementary operation of hydrogen peroxide is as described above.
To sum up, the utility model discloses a device that is arranged in control chemical liquid concentration of silicon polished wafer cleaning machine, the device can be accurate, the concentration of chemicals in the effective control washing liquid, realize that silicon chip surface particle impurity is good gets rid of efficiency and product quality and improves the cleaning performance of cleaning machine to the silicon chip, realizes the high cleanliness requirement on silicon polished wafer surface. Two concentration meters are regularly sampled and are measured ammonia water and hydrogen peroxide respectively in washing tank and the circulating line to feed back the concentration value to control module group, control module group judges the concentration size, issues the instruction as required and opens corresponding measuring pump, replenishes solution in the washing tank, maintains the concentration stability of chemicals in the washing liquid. The utility model relates to a simply, installation convenient operation, the security performance is good, and economical and practical has realized that silicon chip cleaning machine gets rid of effect and product quality to silicon chip surface good granule. The product yield is improved, the economic loss is reduced, and the working efficiency is obviously improved.
The essential features, the basic principle and the advantages of the invention have been shown and described above. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments, and the above embodiments and descriptions are only illustrative of the principles of the present invention, and that the present invention can be modified in various ways according to the actual situation without departing from the spirit and scope of the present invention, and these modifications and improvements are all within the scope of the present invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims (9)

1. An apparatus for controlling chemical liquid concentration for a silicon polishing pad cleaning machine, characterized in that: the device comprises two cleaning tanks, a circulating pipeline and a liquid supplementing pipeline which are communicated with each other, wherein each cleaning tank consists of an inner tank (1) and an outer tank (2) which are embedded with each other, the circulating pipeline consists of a circulating pump (3), a filter (4) and a heater (5), the liquid supplementing pipeline consists of an ammonia water concentration meter (6), a hydrogen peroxide concentration meter (7), a control module (8), an ammonia water metering pump (9) and a hydrogen peroxide metering pump (10), and outlet pipelines of the ammonia water metering pump (9) and the hydrogen peroxide metering pump (10) are connected into the inner tanks (1);
SC-1 solution flows into from the ectosome (2) of washing tank circulation pipeline, process circulation entering behind circulating pump (3), filter (4), heater (5) inside groove (1), aqueous ammonia densimeter (6), the hydrogen peroxide solution densimeter (7) of fluid infusion pipeline carry out the sampling test to aqueous ammonia, hydrogen peroxide solution in the SC-1 solution respectively to reach concentration value feedback after will testing control module group (8), control module group (8) then issue the instruction and open or inoperative aqueous ammonia measuring pump (9), hydrogen peroxide solution measuring pump (10).
2. The apparatus of claim 1, wherein the chemical solution concentration control device comprises: after the ammonia water metering pump (9) and the hydrogen peroxide metering pump (10) are started by the control module (8) through instructions, the ammonia water metering pump (9) and the hydrogen peroxide metering pump (10) supplement chemical liquid according to preset dosage, so that the concentration of ammonia water and hydrogen peroxide in the SC-1 solution is maintained.
3. The apparatus of claim 1, wherein the chemical solution concentration control device comprises: the sampling time intervals of the ammonia water concentration meter (6) and the hydrogen peroxide concentration meter (7) are set in the control module (8).
4. The apparatus of claim 1, wherein the chemical solution concentration control device comprises: the bottom of the outer tank (2) is connected with an inlet of a circulating pipeline, and the bottom of the inner tank (1) is connected with an outlet of the circulating pipeline.
5. The apparatus of claim 1, wherein the chemical solution concentration control device comprises: the circulating pump (3) is arranged at an inlet close to the circulating pipeline, and the heater (5) is arranged at an outlet close to the circulating pipeline.
6. The apparatus of claim 1, wherein the chemical solution concentration control device comprises: the circulating pipeline is connected with the liquid supplementing pipeline through a branch.
7. The apparatus of claim 6, wherein the chemical solution concentration control device comprises: and an ammonia water concentration meter (6) and a hydrogen peroxide concentration meter (7) of the liquid supplementing pipeline are respectively connected with the circulating pipeline through branches.
8. The apparatus of claim 1, wherein the chemical solution concentration control device comprises: the ammonia water concentration meter (6) and the hydrogen peroxide concentration meter (7) are respectively connected with a liquid discharge pipeline through liquid discharge pipes.
9. The apparatus of claim 1, wherein the chemical solution concentration control device comprises: the control module (8) is a PLC controller.
CN201921506066.2U 2019-09-11 2019-09-11 Device for controlling concentration of chemical liquid for silicon polished wafer cleaning machine Active CN210876527U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112090843A (en) * 2020-09-07 2020-12-18 西安奕斯伟硅片技术有限公司 Device for cleaning silicon wafer
CN112530790A (en) * 2020-11-03 2021-03-19 长江存储科技有限责任公司 Wafer cleaning device and wafer cleaning method
CN112892391A (en) * 2021-01-27 2021-06-04 中国工程物理研究院激光聚变研究中心 Polishing solution moisture online adjustment precision control device and method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112090843A (en) * 2020-09-07 2020-12-18 西安奕斯伟硅片技术有限公司 Device for cleaning silicon wafer
CN112530790A (en) * 2020-11-03 2021-03-19 长江存储科技有限责任公司 Wafer cleaning device and wafer cleaning method
CN112530790B (en) * 2020-11-03 2022-01-11 长江存储科技有限责任公司 Wafer cleaning device and wafer cleaning method
CN112892391A (en) * 2021-01-27 2021-06-04 中国工程物理研究院激光聚变研究中心 Polishing solution moisture online adjustment precision control device and method

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Address after: 471000 No. 99 Binhe North Road, Luoyang hi tech Industrial Development Zone, Henan

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