CN210607241U - Gallium nitride switching device, switching tube and electronic equipment - Google Patents

Gallium nitride switching device, switching tube and electronic equipment Download PDF

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Publication number
CN210607241U
CN210607241U CN201921755237.5U CN201921755237U CN210607241U CN 210607241 U CN210607241 U CN 210607241U CN 201921755237 U CN201921755237 U CN 201921755237U CN 210607241 U CN210607241 U CN 210607241U
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Prior art keywords
gallium nitride
switching device
transistor
switching
current sampling
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郑俊杰
张程龙
李律
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Huayuan Zhixin Semiconductor Shenzhen Co Ltd
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Huayuan Zhixin Semiconductor Shenzhen Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements

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  • Electronic Switches (AREA)

Abstract

The application discloses a gallium nitride switching device, a switching tube and electronic equipment. The switching device comprises a gallium nitride transistor and a switching tube; the switch tube is connected with the gallium nitride transistor to control the gallium nitride transistor; the gallium nitride switching device also comprises a gate electrode, a drain electrode, a current sampling end of the switching device and a grounding part; the current sampling end of the switching device is used for collecting the current of the switching device; the grounding part is used for connecting the gallium nitride transistor and the switch tube to the ground together. The switch tube comprises a gate electrode, a drain electrode, a current sampling end of the switching device and a grounding part; the current sampling end of the switching device is used for collecting the current of the switching tube; the grounding part is used for connecting the switch tube to the ground. The electronic device includes the switching device. The switching speed of the electronic equipment can be improved, the reliability is improved, the power consumption caused by the external current sampling resistor is reduced, and the efficiency can be further improved.

Description

Gallium nitride switching device, switching tube and electronic equipment
Technical Field
The present disclosure relates to switching devices, and particularly to a gallium nitride switching device, a switching tube and an electronic device.
Background
In power electronic and electrical equipment, efficient power conversion is an important means for realizing environmental protection and energy conservation. Efficient power conversion is achieved by efficient switching devices. Ever since the advent of silicon transistors, more efficient switching devices have been sought; especially, the modern 5G era is coming, and the development trend of modern switching power supply is to have high efficiency and high power density. The size of the passive device can be effectively reduced by improving the switching frequency. The performance of the conventional silicon (Si) power device has gradually reached a bottleneck, and from a BJT (Bipolar Junction Transistor) using silicon as a material, a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), a Gate controlled IGBT (Insulated Gate Bipolar Transistor), a diode, and the like, to a GaN (gallium nitride) based switching device which is a third generation wide bandgap Semiconductor material and is developed day by day, the GaN power device in the GaN wide bandgap Semiconductor device has a smaller on-resistance compared to the MOSFET of the silicon material, and can bear a higher switching frequency. Gallium nitride has the properties of wide direct band gap, strong atomic bond, high thermal conductivity, high chemical stability (hardly corroded by any acid), strong irradiation resistance and the like, and has wide prospects in the application aspects of photoelectrons, high-temperature high-power devices and high-frequency microwave devices.
At present, gallium nitride devices mainly have three types: sapphire-based gallium nitride devices with sapphire as a substrate, gallium nitride devices with silicon carbide (SiC) as a substrate, and silicon-based gallium nitride devices with silicon as a substrate. Among them, silicon-based gallium nitride devices are attracting attention because of their low cost advantage; however, the reliability and the yield are limited due to the heterostructure of silicon and gallium nitride, so that the application of large-scale mass production is not achieved; in addition, silicon-based gallium nitride devices are also much more costly than conventional silicon-based devices.
Currently, gallium nitride devices are focused primarily on enhancement mode gallium nitride devices and cascade gallium nitride devices. Enhancement mode gan devices are simply direct voltage controlled Drain-Source (Drain-Source) devices through the Gate (Gate). The cascade gallium nitride device is a Junction Field-Effect Transistor (JFET) gallium nitride device which is connected with a low-voltage MOSFET Transistor in series; by controlling the turn-on and turn-off of the low voltage MOSFET transistor, the Drain-Source (Drain-Source) can be controlled. The reliability of the cascaded gallium nitride devices is relatively high.
Fig. 1 is a block diagram of a typical gallium nitride device. The gallium nitride device (gallium nitride transistor) is connected in series with a low voltage N-type MOSFET transistor (NMOS transistor). Referring to fig. 2, wherein the NMOS transistor is a MOS transistor with a vertical structure, the Source (Source) needs to be connected to the port through VIA (VIA) and connected by Wire Bonding.
Figure 3 shows the structure of a typical tandem gallium nitride device.
Fig. 4 shows a typical gallium nitride device application circuit. The figure is a typical flyback topology. A PWM (Pulse width modulation) controller outputs a signal through a GATE electrode (GATE) thereof to drive a switching device; wherein the switching device is a gallium nitride device. The gallium nitride device comprises a gate electrode G, a drain electrode D and a source electrode S; the drain D is connected to the transformer T1; the gate G of the gallium nitride device is connected to the gate G of the PWM controller; the source S of the gallium nitride device is connected to a current sampling resistor and then to a current sampling pin Isense of the PWM controller, and a pin Vcc of the PWM controller provides a power supply required by the PWM controller.
The above background disclosure is only for the purpose of assisting in understanding the inventive concepts and technical solutions of the present application and does not necessarily pertain to the prior art of the present application, and should not be used to assess the novelty and inventive step of the present application in the absence of explicit evidence to suggest that such matter has been disclosed at the filing date of the present application.
SUMMERY OF THE UTILITY MODEL
The application provides a gallium nitride switching device, a switching tube and electronic equipment, which can avoid power consumption caused by an external current sampling resistor and improve the efficiency of the device.
In a first aspect, the present application provides a gallium nitride switching device comprising a gallium nitride transistor and a switching tube;
the switch tube is connected with the gallium nitride transistor to control the gallium nitride transistor;
the gallium nitride switching device also comprises a gate electrode, a drain electrode, a current sampling end of the switching device and a grounding part;
the current sampling end of the switching device is used for collecting the current of the switching device;
the grounding part connects the gallium nitride transistor and the switching tube to the ground in common.
In some preferred embodiments, the ground is a grounded substrate; the gallium nitride transistor and the switch tube are both arranged on the grounding substrate and are both connected with the grounding substrate.
In some preferred embodiments, the gallium nitride transistor and the switching tube are both disposed on the ground substrate and are both connected to the ground substrate by: the gate electrode of the gallium nitride transistor is positioned at the bottom of the substrate, the substrate of the gallium nitride transistor is connected with the grounding base plate, and the substrate of the switching tube is connected with the grounding base plate.
In some preferred embodiments, the gallium nitride switching device further comprises a gate pin, a drain pin, a switching device current sampling pin, and a ground pin;
the gate electrode pin is connected with a gate electrode of the gallium nitride switching device;
the drain electrode pin is connected with the drain electrode;
the current sampling pin of the switching device is connected with the current sampling end of the switching device;
the grounding pin is connected with the grounding part.
In some preferred embodiments, a first conduction channel may be formed between the source of the switching tube and the drain of the switching tube;
a second conduction channel can be formed between the source electrode of the gallium nitride transistor and the drain electrode of the gallium nitride transistor;
the first conduction channel can be conducted with the second conduction channel;
the switching device current sampling terminal may be conductive with the first conduction channel and the second conduction channel.
In some preferred embodiments, the first conducting channel and the second conducting channel may be in conduction specifically: and the drain electrode of the switching tube is connected with the source electrode of the gallium conversion transistor.
In some preferred embodiments, the switching device current sampling terminal is conductive to the first conduction channel and the second conduction channel, specifically: the current sampling end of the switch device is a source electrode of the switch tube, and the current sampling pin of the switch device is connected with the source electrode of the switch tube through a routing wire.
In some preferred embodiments, the gate of the gan switching device is the gate of the switching tube; the gate pole of the switching tube is connected to the gate pole pin through a routing wire;
the drain electrode of the gallium nitride switching device is the drain electrode of the gallium nitride transistor; and the drain electrode of the gallium nitride transistor is connected to the drain electrode pin through a routing wire.
In some preferred embodiments, the switching tube is a MOSFET transistor; the MOSFET transistor is an N-channel MOSFET transistor; the N-channel MOSFET transistor is a planar MOSFET transistor.
In a second aspect, the present application provides a switching tube, comprising a gate, a drain, a current sampling end of a switching device, and a ground;
the current sampling end of the switching device is used for collecting the current of the switching tube;
the grounding part is connected with the substrate of the switch tube and used for connecting the switch tube to the ground.
In some preferred embodiments, a built-in resistor is connected between the drain and the ground.
In some preferred embodiments, the ground is a grounded substrate; the current sampling end of the switching device is a source electrode of the switching tube; or the drain electrode is connected with the source electrode of the switch tube, and the current sampling end of the switch device is the source electrode of the switch tube.
In some preferred embodiments, the specific form of the switching tube includes a gallium nitride transistor and a MOSFET transistor.
In some preferred embodiments, the MOSFET transistor is an N-channel MOSFET transistor; the N-channel MOSFET transistor is a planar MOSFET transistor.
In a third aspect, the present application provides an electronic device comprising the above-described gallium nitride switching device.
In some preferred embodiments, the electronic device further comprises a pulse width modulation controller having a gate; the gate is used for being connected with the gate of the pulse width modulation controller.
Compared with the prior art, the beneficial effect of this application has:
the gallium nitride transistor and the switch tube of the gallium nitride switch device are connected to the ground through the grounding part, through holes (VIA) are not needed, electromagnetic interference caused by stray inductance generated by the through holes can be reduced, the switching frequency can be improved, and the reliability of the device can be improved; the gallium nitride switching device of the embodiment has a built-in current sampling end of the switching device, and does not need a current sampling resistor, so that power consumption caused by the current sampling resistor can be avoided, and the efficiency of the device can be further improved. Therefore, the gallium nitride switching device of the embodiment has a simpler structure, can enable the control of the pulse width modulation controller to be more flexible, can improve the current sampling precision, and can improve the switching speed of electronic equipment.
Drawings
FIG. 1 is a block diagram of a typical gallium nitride device;
FIG. 2 illustrates a cross-sectional structure of the gallium nitride device of FIG. 1;
FIG. 3 illustrates the structure of a typical cascaded gallium nitride device;
FIG. 4 shows a typical GaN device application circuit;
fig. 5 shows a cross-sectional structure of a gallium nitride device according to a first embodiment of the present application;
fig. 6 shows a package structure of a gallium nitride device according to a first embodiment of the present application;
fig. 7 shows a package structure of a gallium nitride device according to a first embodiment of the present application;
fig. 8 shows a cross-sectional structure of a switching tube of the first embodiment of the present application;
fig. 9 shows a circuit configuration of an electronic apparatus of a second embodiment of the present application;
fig. 10 shows a switching tube in which a ground resistor is connected to the drain of the third embodiment of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the embodiments of the present application more clearly apparent, the present application is further described in detail below with reference to fig. 1 to 10 and the embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
It will be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like, refer to an orientation or positional relationship indicated in the drawings that is solely for the purpose of facilitating the description of the embodiments and simplifying the description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be considered as limiting the application.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the embodiments of the present application, "a plurality" means two or more unless specifically defined otherwise.
First embodiment
The present embodiment provides a gallium nitride switching device. Referring to fig. 6, the gallium nitride switching device 10 includes a gallium nitride transistor 100 and a switching tube 200 packaged together.
In the present embodiment, the switch tube 200 is a MOSFET transistor, specifically an N-channel MOSFET transistor (or N-type MOSFET transistor); in other embodiments, the switch tube 200 may be other types of transistors.
Referring to fig. 6, a switching transistor 200 is connected to the gan transistor 100 to control the gan transistor 100. Specifically, the switching transistor 200 is connected in series with the gan transistor 100. A conductive channel may be formed between the switch tube 200 and the gan transistor 100, thereby generating a current.
The gan switching device 10 of this embodiment is provided with a gate 101, a drain 102, a switching device current sampling terminal 103, and a ground 104.
Referring to fig. 5, a gallium nitride transistor 100 has a gate, a source, and a drain. The switch tube 200 also has a gate, a source and a drain.
The gate 101 may receive a gate drive signal to drive the gan switching device 10. In the present embodiment, the gate 101 is a gate of the switching tube 200.
The drain 102 is the drain of the gan transistor 100; drain 102 is for connection to the winding of transformer T1.
The switching device current sampling terminal 103 is used for collecting the current of the gallium nitride switching device 10. In this embodiment, the current sampling terminal 103 of the switching device is a source of the switching tube 200; in other embodiments, the switching device current sampling terminal 103 is a component built in the gan switching device 10 and connected to the source of the switching tube 200. After the gate 101 of the gan switching device 10 receives the driving signal, the switching transistor 200 and the gan transistor 100 are turned on. A first conduction channel can be formed between the source and the drain of the switching tube 200 to generate current; a second conduction channel may also be formed between the source and the drain of the gan transistor 100; because the switching tube 200 is connected in series with the gan transistor 100, specifically, the drain of the switching tube 200 is connected to the source of the gan transistor 100, the first conducting channel is conducted with the second conducting channel; the source of the switching tube 200, which is used as the current sampling terminal 103 of the switching device, can be connected to the first conducting channel and the second conducting channel, so that the current of the gallium nitride switching device 10 can be collected.
The ground portion 104 is used to commonly connect the gallium nitride transistor 100 and the switching tube 200 to the ground GND. In the present embodiment, the ground portion is a ground substrate; specifically, the gan transistor 100 and the switch tube 200 are both disposed on the ground substrate 104 and are both directly connected to the ground substrate 104, thereby achieving grounding. In the present embodiment, the gate of the gan transistor 100 is located at the bottom of the substrate 110, and the substrate 110 of the gan transistor 100 is connected to the grounded substrate 104, so that the gan transistor 100 is directly connected to the grounded substrate 104; the substrate 210 of the switch tube 200 is connected to the grounding substrate 104, so that the switch tube 200 is directly connected to the grounding substrate 104; the grounded substrate 104 is connected to ground, and thus the gan transistor 100 and the switch tube 200 are commonly connected to ground. In other implementations, the ground portion 104 is another component, such as a terminal, that can commonly connect the gallium nitride transistor 100 and the switch tube 200 to the ground GND.
Referring to fig. 6 and 7, the gan switching device of the present embodiment is packaged to have a gate lead 11, a drain lead 12, a switching device current sampling lead 13, and a ground lead 14.
The gate pin 11 is connected to the gate of the gan switching device 10, and more particularly to the gate of the switching transistor 200. In the present embodiment, the gate of the switch tube 200 is connected to the gate pin 11 by Wire Bonding (Wire Bonding). Thus, a gate driving signal is input to the gate of the switching tube 200 through the gate pin 11.
Drain lead 12 is connected to drain 102. In the present embodiment, the drain lead 12 is connected to the drain of the gan transistor 100; the drain of the gan transistor 100 is connected to the drain lead 12 by wire bonding.
The switching device current sampling pin 13 is connected to the switching device current sampling terminal 103, specifically to the source of the switching tube 200. In this embodiment, the switching device current sampling pin 13 is connected to the source of the switching tube 200 by wire bonding. In use, the current sampling pin 13 of the switching device is connected to the current sampling pin Isense of the pwm controller 20, so that the sampled current of the gan switching device 10 is input to the pwm controller 20.
The ground pin 14 is connected to the ground substrate 104. In use, the ground pin 14 is connected to ground, so that the gan transistor 100 and the switch tube 200 are commonly connected to ground.
According to actual needs, a plurality of drain pins 12 and ground pins 14 may be provided, such as two, three, four, five or more than six drain pins 12 and ground pins 14.
Referring to fig. 6 and 9, in the present embodiment, the pwm controller 20 outputs a gate driving signal to the gate pin 11, and the drain and the source of the switching transistor 200 are turned on; since the source of the gan transistor 100 is connected to the drain of the switch tube 200 and the gate of the gan transistor 100 is connected to ground through the grounding substrate 104, the gan transistor 100 is turned on, so that a current flows inside the gan switch device 10. The current of the gan switching device 10 is transmitted to the switching device current sampling pin 13 through the built-in switching device current sampling terminal 103, and then enters the current sampling pin Isense of the pwm controller 20. In this way, the gallium nitride switching device 10 can be controlled by sampling the current.
From the above, the present embodiment proposes a novel switching transistor (such as a MOSFET transistor) structure, compared to the conventional switching transistor: referring to fig. 8, the switch tube 200 of the present embodiment includes a gate 101, a drain 102, a switching device current sampling terminal 103, and a ground 104; the drain 102 is the drain of the switching tube 200; the switching device current sampling end 103 is used for collecting the current of the switching tube 200; the switching device current sampling end 103 is connected with the source electrode of the switching tube 200, or the source electrode of the switching tube 200 is directly used as the switching device current sampling end 103, so that the built-in current sampling is realized; substrate 210 of switch tube 200 is directly connected to ground 104 without the need for a VIA (VIA). The switch tube 200 of the present embodiment may be a gallium nitride transistor or a MOSFET transistor. Compared with the traditional switch device architecture, the gallium nitride transistor 100 and the switch tube 200 of the gallium nitride switch device of the embodiment are both directly placed on the grounding substrate 104, and a through hole (VIA) is not needed, so that the electromagnetic interference caused by the generated stray inductance can be reduced, and the switching frequency can be improved; the gallium nitride switching device 10 of the present embodiment has a built-in switching device current sampling terminal 103, and does not require a current sampling resistor, so that power consumption caused by the current sampling resistor can be avoided, and the efficiency of the device can be improved. Therefore, the gallium nitride switching device of the embodiment has a simpler structure, the PWM controller is more flexibly controlled, the current sampling precision can be improved, and the switching speed of electronic equipment can be improved.
Second embodiment
Referring to fig. 9, the present embodiment provides an electronic apparatus including the above-described gallium nitride switching device 10. The drain terminal 102 of the gallium nitride switching device 10 is connected to a transformer T1.
The electronic device of the present embodiment further comprises a pulse width modulation controller 20. The pulse width modulation controller 20 may be connected to the gate 101 of the gallium nitride switching device 10 to drive the gallium nitride switching device 10. In this embodiment, the electronic device is a switching power supply.
Third embodiment
Referring to fig. 10, the switch tube 200 of the present embodiment is provided with a built-in resistor R0. Built-in resistor R0Has one end connected to the drain of the switching tube 200 and has a built-in resistor R0The other end of the second electrode is connected to the grounding part 104; that is to say the built-in resistor R0Is used as the built-in ground resistance of the switch tube 200. Built-in resistor R as ground resistor0A drain current path is provided, and an instantaneous peak voltage is suppressed, thereby improving reliability.
The foregoing is a further detailed description of the present application in connection with specific/preferred embodiments and is not intended to limit the present application to that particular description. For a person skilled in the art to which the present application pertains, several alternatives or modifications to the described embodiments may be made without departing from the concept of the present application, and these alternatives or modifications should be considered as falling within the scope of the present application.

Claims (10)

1. A gallium nitride switching device, characterized by:
comprises a gallium nitride transistor and a switching tube;
the switch tube is connected with the gallium nitride transistor to control the gallium nitride transistor;
the gallium nitride switching device also comprises a gate electrode, a drain electrode, a current sampling end of the switching device and a grounding part;
the current sampling end of the switching device is used for collecting the current of the gallium nitride switching device;
the grounding part is used for connecting the gallium nitride transistor and the switch tube to the ground together.
2. The gallium nitride switching device of claim 1, wherein:
the grounding part is a grounding substrate;
the gallium nitride transistor and the switch tube are both arranged on the grounding substrate and are both connected with the grounding substrate.
3. The gan switching device of claim 2, wherein the gan transistor and the switch transistor are both disposed on the ground substrate and are both connected to the ground substrate by: the gate electrode of the gallium nitride transistor is positioned at the bottom of the substrate, the substrate of the gallium nitride transistor is connected with the grounding base plate, and the substrate of the switching tube is connected with the grounding base plate.
4. The gallium nitride switching device of claim 1, wherein: the gallium nitride switching device also comprises a gate electrode pin, a drain electrode pin, a current sampling pin of the switching device and a grounding pin;
the gate electrode pin is connected with a gate electrode of the gallium nitride switching device;
the drain electrode pin is connected with the drain electrode;
the current sampling pin of the switching device is connected with the current sampling end of the switching device;
the grounding pin is connected with the grounding part.
5. The gallium nitride switching device of claim 4, wherein:
a first conduction channel can be formed between the source electrode of the switch tube and the drain electrode of the switch tube;
a second conduction channel can be formed between the source electrode of the gallium nitride transistor and the drain electrode of the gallium nitride transistor;
the drain electrode of the switching tube is connected with the source electrode of the gallium-melting transistor, and the first conduction channel can be conducted with the second conduction channel;
the switching device current sampling terminal may be conductive with the first conduction channel and the second conduction channel.
6. The GaN switching device of claim 5, wherein the switching device current sampling terminal is conductive to the first conduction channel and the second conduction channel, in particular: the current sampling end of the switch device is a source electrode of the switch tube, and the current sampling pin of the switch device is connected with the source electrode of the switch tube through a routing wire.
7. The gallium nitride switching device of claim 4, wherein:
the gate electrode of the gallium nitride switching device is the gate electrode of the switching tube; the gate pole of the switching tube is connected to the gate pole pin through a routing wire;
the drain electrode of the gallium nitride switching device is the drain electrode of the gallium nitride transistor; the drain electrode of the gallium nitride transistor is connected to the drain electrode pin through a routing wire;
the switch tube is an MOSFET transistor; the MOSFET transistor is an N-channel MOSFET transistor; the N-channel MOSFET transistor is a planar MOSFET transistor.
8. A kind of switch tube, characterized by:
the switch device comprises a gate electrode, a drain electrode, a current sampling end of the switch device and a grounding part;
the current sampling end of the switching device is used for collecting the current of the switching tube;
the grounding part is connected with the substrate of the switch tube and used for connecting the switch tube to the ground.
9. The switching tube of claim 8, wherein: a built-in resistor is connected between the drain electrode and the grounding part; the grounding part is a grounding substrate; the current sampling end of the switching device is connected with the source electrode of the switching tube; the specific form of the switching tube comprises a gallium nitride transistor and a MOSFET transistor; the MOSFET transistor is an N-channel MOSFET transistor; the N-channel MOSFET transistor is a planar MOSFET transistor.
10. An electronic device, characterized in that: comprising a gallium nitride switching device according to any one of claims 1 to 7.
CN201921755237.5U 2019-10-18 2019-10-18 Gallium nitride switching device, switching tube and electronic equipment Active CN210607241U (en)

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Application Number Priority Date Filing Date Title
CN201921755237.5U CN210607241U (en) 2019-10-18 2019-10-18 Gallium nitride switching device, switching tube and electronic equipment

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Application Number Priority Date Filing Date Title
CN201921755237.5U CN210607241U (en) 2019-10-18 2019-10-18 Gallium nitride switching device, switching tube and electronic equipment

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