CN209728184U - Radon measuring devices - Google Patents
Radon measuring devices Download PDFInfo
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- CN209728184U CN209728184U CN201920181602.XU CN201920181602U CN209728184U CN 209728184 U CN209728184 U CN 209728184U CN 201920181602 U CN201920181602 U CN 201920181602U CN 209728184 U CN209728184 U CN 209728184U
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- radon
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Abstract
The radon measuring devices of the utility model, survey radon chamber and semiconductor detector including ground connection, semiconductor detector is in parallel with first resistor, the first resistor and second resistance, 3rd resistor series connection, the first resistor is located at the second resistance, between 3rd resistor, the 3rd resistor ground connection, the second resistance is connect with negative high voltage power source, so as to load negative high voltage on semiconductor detector, electric field is formed between the survey radon chamber of ground connection and the semiconductor detector for loading negative high voltage, the positively charged radon daughter for surveying the indoor radon gas decay generation of radon chamber is adsorbed in the surface of semiconductor detector.The radon measuring devices of the utility model are grounded survey radon chamber, and load negative high voltage on the detector of inside for surveying radon chamber, thus eliminating the need the security risk that survey radon chamber is generated with high-voltage electricity, can easily increase and survey radon chamber volume to improve sensitivity.
Description
Technical field
The utility model relates to the physical properties by means of measuring material to carry out testing field, survey more particularly to a kind of radon gas
Measure instrument.
Background technique
Radon be also cause resident's lung cancer occur the reason of one of, be the second largest factor for being only second to Induced By Tobacco Smoke lung cancer.Closely
For over ten years, the World Health Organization announce suffered by people in natural radiation 50% be as caused by the radon gas in environment, therefore
The measurement of radon gas has been increasingly becoming the topic of public concern at present.Fully understand that instrument for measuring radon type, principle and application are also people
Focus more on.
With China's expanding economy, the improvement of house condition, environment radon problem is more and more prominent.It is opened from nineteen ninety-five
Begin, China has promulgated " radon consistence controls standard in house " (GB/T16146-1995), " hypogee radon and radon daughter control in succession
Standard processed " (GB 16356-1996), " code for indoor environmental pollution control of civil building engineering " (GB 50325-2001), " build
Build material radionuclide limitation " (GB 6566-2001), " Indoor Air Quality standards " (GB/T 18883-2002) and " electricity
From radiation protection and the safe basic standard of radiation source " national standard of the control such as (GB 18870-2002) radon, in room and
Radon consistence level in hypogee is intervened.It is to be understood that whether occupy indoor radon consistence exceeded, radon consistence must be just carried out
Accurate Determining, the radon measuring devices of radon concentration measurement can be carried out in the prior art by lacking.
Utility model content
The technical problem to be solved by the present invention is to provide a kind of structure is simple, radon concentration measurement can be carried out
Radon measuring devices.
The radon measuring devices of the utility model, survey radon chamber and semiconductor detector including ground connection, semiconductor probe
Device is in parallel with first resistor, and the first resistor is connected with second resistance, 3rd resistor, and the first resistor is located at described second
Between resistance, 3rd resistor, the 3rd resistor ground connection, the second resistance is connect with negative high voltage power source, so that semiconductor is visited
It surveys on device and loads negative high voltage, form electric field between the survey radon chamber of ground connection and the semiconductor detector for loading negative high voltage, radon will be surveyed
The positively charged radon daughter that the indoor radon gas decay of chamber generates is adsorbed in the surface of semiconductor detector.
The radon measuring devices of the utility model, wherein the output end of semiconductor detector and one end of high-voltage capacitance connect,
The other end of the high-voltage capacitance is connect with preamplifier, so that the signal of semiconductor detector output passes through high-voltage electricity
Preamplifier, which is input to, after appearance isolated DC high pressure amplifies output.
The radon measuring devices of the utility model, wherein the resistance of the 3rd resistor is greater than the resistance of second resistance, first
The resistance of resistance, to provide bias voltage for semiconductor detector.
The radon measuring devices of the utility model are grounded survey radon chamber, and load on the detector of inside for surveying radon chamber
Negative high voltage, thus eliminating the need the security risks that survey radon chamber is generated with high-voltage electricity, can easily increase and survey radon chamber volume
To improve sensitivity.
Detailed description of the invention
Fig. 1 is the circuit diagram of the radon measuring devices of the utility model.
Specific embodiment
As shown in Figure 1, the radon measuring devices of the utility model, survey radon chamber 1 and semiconductor detector including ground connection
2, semiconductor detector is in parallel with first resistor 4, and first resistor 4 is connected with second resistance 5,3rd resistor 3, and first resistor 4
Between second resistance, 3rd resistor, 3rd resistor ground connection, second resistance 5 is connect with negative high voltage power source, so that semiconductor probe
Negative high voltage is loaded on device, forms electric field between the survey radon chamber of ground connection and the semiconductor detector for loading negative high voltage, will survey radon chamber
The positively charged radon daughter that indoor radon gas decay generates is adsorbed in the surface of semiconductor detector.
Survey radon chamber 1 is hemispherical, and semiconductor detector 2 is located at the inside for surveying radon chamber 1.
The radon measuring devices of the utility model, wherein the output end of semiconductor detector and one end of high-voltage capacitance 6 connect
Connect, the other end of high-voltage capacitance is connect with preamplifier 7 so that semiconductor detector output signal by high-voltage capacitance every
Output is amplified from preamplifier is input to after high direct voltage.
The radon measuring devices of the utility model, wherein the resistance of 3rd resistor is greater than the resistance of second resistance, first resistor
Resistance, to provide bias voltage for semiconductor detector.
The radon measuring devices of the utility model are a kind of radon concentration measuring instrument based on electrostatic collection principle, principle
It is to form electric field using the high voltage differential surveyed between radon chamber and detector, the indoor radon gas decay of chamber is generated positively charged
Radon daughter be collected into the surface of detector.
The radon measuring devices of the utility model are grounded survey radon chamber, and load on the detector of inside for surveying radon chamber
Negative high voltage, thus eliminating the need the security risks that survey radon chamber is generated with high-voltage electricity, can easily increase and survey radon chamber volume
To improve sensitivity.
- HV is the input of filtered negative high voltage power source in figure, and first resistor 4 and 5 resistance value of second resistance are smaller, and third
3 resistance value of resistance is very big (much larger than first resistor 4 and 5 resistance value of second resistance), can be safe on such semiconductor detector 2
Negative high voltage is maintained, and the presence of first resistor 4 is also that semiconductor detector 2 provides the bias voltage of normal work, semiconductor
The signal that detector 2 exports inputs preamplifier 7 after 6 isolated DC high pressure of high-voltage capacitance and amplifies, amplified
Signal can be used for subsequent processing and calculating.
Above are merely preferred embodiments of the utility model, it is noted that for the ordinary skill people of the art
For member, without departing from the principle of this utility model, it can also make several improvements and retouch, these improvements and modifications
Also it should be regarded as the protection scope of the utility model.
Claims (3)
1. a kind of radon measuring devices, which is characterized in that survey radon chamber and semiconductor detector including ground connection, semiconductor probe
Device is in parallel with first resistor, and the first resistor is connected with second resistance, 3rd resistor, and the first resistor is located at described second
Between resistance, 3rd resistor, the 3rd resistor ground connection, the second resistance is connect with negative high voltage power source, so that semiconductor is visited
It surveys on device and loads negative high voltage, form electric field between the survey radon chamber of ground connection and the semiconductor detector for loading negative high voltage, radon will be surveyed
The positively charged radon daughter that the indoor radon gas decay of chamber generates is adsorbed in the surface of semiconductor detector.
2. radon measuring devices as described in claim 1, which is characterized in that the output end of semiconductor detector and high-voltage capacitance
One end connection, the other end of the high-voltage capacitance are connect with preamplifier, so that the signal of semiconductor detector output
Preamplifier, which is input to, after high-voltage capacitance isolated DC high pressure amplifies output.
3. radon measuring devices as claimed in claim 2, which is characterized in that the resistance of the 3rd resistor is greater than second resistance
The resistance of resistance, first resistor, to provide bias voltage for semiconductor detector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920181602.XU CN209728184U (en) | 2019-02-01 | 2019-02-01 | Radon measuring devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920181602.XU CN209728184U (en) | 2019-02-01 | 2019-02-01 | Radon measuring devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209728184U true CN209728184U (en) | 2019-12-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920181602.XU Active CN209728184U (en) | 2019-02-01 | 2019-02-01 | Radon measuring devices |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112051603A (en) * | 2020-09-28 | 2020-12-08 | 中国科学院大学 | Device and method for detecting radon content |
| CN112230265A (en) * | 2020-09-07 | 2021-01-15 | 核工业北京化工冶金研究院 | Radon measuring chamber |
| CN113219519A (en) * | 2021-04-27 | 2021-08-06 | 赛睿环仪(北京)科技有限公司 | Negative high-voltage detector and emanometer |
| CN113238272A (en) * | 2021-04-27 | 2021-08-10 | 赛睿环仪(北京)科技有限公司 | Radon exhalation rate measuring instrument |
-
2019
- 2019-02-01 CN CN201920181602.XU patent/CN209728184U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112230265A (en) * | 2020-09-07 | 2021-01-15 | 核工业北京化工冶金研究院 | Radon measuring chamber |
| CN112230265B (en) * | 2020-09-07 | 2024-04-09 | 核工业北京化工冶金研究院 | Radon measuring chamber |
| CN112051603A (en) * | 2020-09-28 | 2020-12-08 | 中国科学院大学 | Device and method for detecting radon content |
| CN112051603B (en) * | 2020-09-28 | 2024-05-31 | 中国科学院大学 | Device and method for detecting radon content |
| CN113219519A (en) * | 2021-04-27 | 2021-08-06 | 赛睿环仪(北京)科技有限公司 | Negative high-voltage detector and emanometer |
| CN113238272A (en) * | 2021-04-27 | 2021-08-10 | 赛睿环仪(北京)科技有限公司 | Radon exhalation rate measuring instrument |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201112 Address after: 101400 Beijing city Huairou District Yanqi Park Economic Development Zone No. 26 Street Patentee after: BEIJING YUNONG HIGH QUALITY AGRICULTURAL PRODUCTS Co.,Ltd. Address before: 101300 Room 2123, 2 Floor, 102 Gate, 8 Building, 12 Xinjie, Nanfaxin Town, Shunyi District, Beijing Patentee before: BEIJING HANLINYUAN TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230918 Address after: Room 313, Building 3, No. 900 Lanfeng Road, Fengxian District, Shanghai, 201400 Patentee after: Shanghai Pujian Measurement and Control Instrument Co.,Ltd. Address before: No. 26, Leyuan Street, Yanqi Economic Development Zone, Huairou District, Beijing 101400 Patentee before: BEIJING YUNONG HIGH QUALITY AGRICULTURAL PRODUCTS CO.,LTD. |