CN209329967U - A kind of stack bus bar with exchange exit - Google Patents
A kind of stack bus bar with exchange exit Download PDFInfo
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- CN209329967U CN209329967U CN201821890859.4U CN201821890859U CN209329967U CN 209329967 U CN209329967 U CN 209329967U CN 201821890859 U CN201821890859 U CN 201821890859U CN 209329967 U CN209329967 U CN 209329967U
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- bus bar
- busbar
- exchange
- alternating current
- input
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- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- 238000009434 installation Methods 0.000 claims abstract description 7
- 239000004020 conductor Substances 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 2
- 230000003796 beauty Effects 0.000 abstract description 2
- 238000012423 maintenance Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 230000005669 field effect Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- -1 silicon carbide metal-oxide Chemical class 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
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Abstract
The utility model discloses a kind of stack bus bar with exchange exit, including an input busbar, three intermediate busbars, an exchange switching busbar, an alternating current bus bar.Wherein, the input busbar, alternating current bus bar are L-shaped, including a horizontal plane and a vertical plane；It is described input busbar, alternating current bus bar vertical plane be generally aligned in the same plane.The utility model utilizes alternating current bus bar, and the exchange end of mould group is drawn out to and DC terminal same plane, so that the difficulties in installation and maintenance of mould group greatly reduces, the relatively sharp beauty of the connecting wiring of mould group.Meanwhile laminated bus bar structure is simple, the simple to install of internal power semiconductor device.
Description
Technical field
The utility model belongs to stack bus bar technical field, and in particular to a kind of stack bus bar with exchange exit.
Background technique
With the development of electrical engineering, the application demand of high voltage and high capacity gradually increases.By power semiconductor
The restriction of voltage class and its production cost, it is unreliable and uneconomical by single power semiconductor.It can be used in engineering
Multiple power semiconductor module mould group directly in series, topology is simple, and control and protection are simple.
Currently, multiple power semiconductor module mould group directly in series, direct-flow input end (including electrode input end and negative
Pole input terminal) and ac input end be located at one in front and one in back two planes.In practical application, wiring is difficult to carry out by same wire casing
Cabling, part cabling are usually needed across interior of equipment cabinet where series mould set, and layout is relatively chaotic.Simultaneously as space limits,
Worker is often difficult to directly contact rear of cabinet, causes mould group difficult to install；Similarly, when system jam, to mould group
The difficulty overhauled and replaced increases.
Utility model content
In view of above-mentioned, the utility model provides a kind of stack bus bar with exchange exit, which passes through
Alternating current bus bar is generally aligned in the same plane exchange exit, electrode input end, negative input.Meanwhile the parasitic electricity of stack bus bar
Feel small, be conducive to the series connection of power semiconductor, and laminated bus bar structure is compact, simple to install is convenient.
A kind of stack bus bar with exchange exit, is made of six parts, including one has electrode input end, bears
The input busbar of pole input terminal, three intermediate busbars with power semiconductor mounting hole, an exchange switching busbar, one
Part has the alternating current bus bar of exchange exit；Wherein, the input busbar, alternating current bus bar are L-shaped, including a horizontal plane and one
A vertical plane；The electrode input end, negative input are located at the input busbar vertical plane, and the exchange exit is located at institute
State alternating current bus bar vertical plane；The input busbar vertical plane and the alternating current bus bar vertical plane are generally aligned in the same plane, the input
Bus-bar horizontal face is located at below the alternating current bus bar horizontal plane.
Further, the input busbar and the intermediate busbar include five layer laminates, from top to bottom successively are as follows: lower layer
Insulation board, lower layer's conductor plate, intermediate insulation plate, top conductor plate, upper layer insulation board；The exchange switching busbar is exposed copper
Row；The alternating current bus bar is the copper bar for wrapping up insulating layer.
Further, the intermediate busbar includes four power semiconductor mounting holes；The exchange switching busbar packet
Containing two power semiconductor mounting holes and two switching mounting holes.
Further, the alternating current bus bar horizontal plane includes two switching mounting holes, and the switching is installed pore size and opened
Hole is corresponding with switching mounting hole on exchange switching busbar.
Further, the power semiconductor mounting hole packet size and aperture correspond to the size of power semiconductor
With installation pin.
Further, the power semiconductor uses IGBT (insulated gate bipolar transistor) module or SiC
MOSFET (silicon carbide metal-oxide semiconductor field effect transistor) module.
The utility model utilize alternating current bus bar, by the exchange end of mould group be drawn out to DC terminal same plane so that mould group
Difficulties in installation and maintenance greatly reduce, the relatively sharp beauty of the connecting wiring of mould group.Meanwhile laminated bus bar structure is simple,
The simple to install of internal power semiconductor device.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of specific embodiment of the present utility model.
Fig. 2 (a) is the left view that busbar is inputted in Fig. 1；Wherein, electrode input end, negative input and exit is exchanged
It is generally aligned in the same plane.
Fig. 2 (b) be input the electrode input end of busbar, negative input and alternating current bus bar in Fig. 1 exchange exit
Main view.
Fig. 2 (c) is the cross-sectional view that busbar, intermediate busbar are inputted in Fig. 1.
Fig. 3 is the schematic diagram of alternating current bus bar in Fig. 1.
Fig. 4 (a) is that busbar, intermediate busbar and the structural schematic diagram for exchanging switching busbar are inputted in Fig. 1.
The specific embodiment that Fig. 4 (b) is Fig. 1 is applied to eight concatenated connection schematic diagrams of power semiconductor.
Fig. 4 (c) is that the power semiconductor in Fig. 4 (b) is SiC MOSFET (silicon carbide metal-oxide semiconductor
Field effect transistor) module when equivalent schematic diagram.
Fig. 4 (d) is the power semiconductor in Fig. 4 (b) when being IGBT (insulated gate bipolar transistor) module etc.
Imitate schematic diagram.
Specific embodiment
In order to more specifically describe the utility model, with reference to the accompanying drawing and specific embodiment is to the utility model
Technical solution is described in detail.
As shown in Figure 1, present embodiment discloses a kind of stack bus bar with exchange exit, including input busbar
1, intermediate busbar 2,3,4, exchange switching busbar 5, alternating current bus bar 6.
As shown in Fig. 2 (a) and Fig. 2 (b), input busbar 1, alternating current bus bar 6 are L-shaped, including horizontal plane and vertical plane.Input
2,3,4 surface of 1 horizontal plane of busbar and intermediate busbar, exchange switching 5 surface of busbar are in same plane；Alternating current bus bar 6 is horizontal
Face is located above input bus-bar horizontal face.Input 1 vertical plane of busbar and 6 vertical plane of alternating current bus bar are generally aligned in the same plane.Input is female
Arranging 1 vertical plane includes electrode input end 103, negative input 104, for connecting higher level's DC power supply or DC capacitor busbar,
6 vertical plane of alternating current bus bar includes exchange exit 603, for connecting external communication end.Input busbar 1 and intermediate busbar 2,3,4
It is the stack bus bar for including five layer laminates, as shown in Fig. 2 (c), sectional view is formed by five layers, comprising: upper layer insulation board 001,
Top conductor plate 002, intermediate insulation plate 003, lower layer's conductor plate 004, lower layer's insulation board 005.As shown in Fig. 2 (c),
As shown in figure 3, mounting hole 601,602 of transferring on alternating current bus bar 6 is used for and is exchanged on switching busbar 5 in Fig. 4 (a)
Switching mounting hole 502 is connected by copper post with fastener.
Such as Fig. 4 (a), inputting busbar 1 includes power semiconductor mounting hole 101,102, and intermediate busbar 2,3,4 respectively includes
Four power semiconductors mounting hole 201-204,301-304,401-404, exchange switching busbar includes power semiconductor device
Part mounting hole 501,504 is used to connect with power semiconductor input electrode.The electrode input end 103 and mounting hole
101 are located at the input busbar top conductor layer, and the negative input 104 and mounting hole 102 are located under the input busbar
Layer conductor layer；Similarly, mounting hole 201 and 202 is located at the intermediate 2 top conductor layer of busbar, and mounting hole 203 and 204 is located at
2 lower layer's conductor layer of intermediate busbar；Similarly, mounting hole 301 and 302 is located at the intermediate 3 top conductor layer of busbar, installation
Hole 303 and 304 is located at intermediate 3 lower layer's conductor layer of busbar；Similarly, mounting hole 401 and 402 is located at the intermediate busbar 24
Top conductor layer, mounting hole 403 and 404 are located at intermediate 4 lower layer's conductor layer of busbar.
When present embodiment is applied to eight power semiconductor series connection, connection schematic diagram such as Fig. 4 (b) institute
Show, mounting hole 101 connects the anode of power semiconductor M1, and the cathode of power semiconductor M1 connects mounting hole 201；Class
As, mounting hole 202 connects the anode of power semiconductor M2, and the cathode of power semiconductor M2 connects mounting hole 301；
Similarly, mounting hole 302 connects the anode of power semiconductor M3, and the cathode of power semiconductor M3 connects mounting hole
401；Similarly, mounting hole 402 connects the anode of power semiconductor M4, and the cathode of power semiconductor M4 connects installation
Hole 501；Similarly, mounting hole 504 connects the anode of power semiconductor M5, and the cathode of power semiconductor M5 connects peace
Fill hole 403；Similarly, mounting hole 404 connects the anode of power semiconductor M6, the cathode connection of power semiconductor M6
Mounting hole 303；Similarly, mounting hole 304 connects the anode of power semiconductor M7, and the cathode of power semiconductor M7 connects
Connect mounting hole 203；Similarly, mounting hole 204 connects the anode of power semiconductor M8, the cathode of power semiconductor M8
Connect mounting hole 102.
When above-mentioned power semiconductor is SiC MOSFET (silicon carbide metal-oxide semiconductor field effect transistor)
When module, the equivalent circuit of Fig. 4 (b) such as Fig. 4 (c).
When above-mentioned power semiconductor is IGBT (insulated gate bipolar transistor) module, the equivalent circuit of Fig. 4 (b)
Such as Fig. 4 (d).
The above-mentioned description to embodiment is for that can understand and apply this practical convenient for those skilled in the art
It is novel.Person skilled in the art obviously easily can make various modifications to above-described embodiment, and illustrating herein
General Principle be applied in other embodiments without having to go through creative labor.Therefore, the utility model is not limited to above-mentioned
Embodiment, those skilled in the art's announcement according to the present utility model, the improvement made for the utility model and modification are all answered
This is within the protection scope of the utility model.
Claims (6)
1. a kind of stack bus bar with exchange exit, it is characterised in that: be made of six parts, including one has anode
The input busbar of input terminal, negative input, three intermediate busbars with power semiconductor mounting hole, an exchange turn
Busbar is connect, one has the alternating current bus bar of exchange exit；Wherein, the input busbar, alternating current bus bar are L-shaped, including one
Horizontal plane and a vertical plane；The electrode input end, negative input are located at the input busbar vertical plane, and the exchange is drawn
Outlet is located at the alternating current bus bar vertical plane；The input busbar vertical plane and the alternating current bus bar vertical plane are located at same flat
Face, the input bus-bar horizontal face are located at below the alternating current bus bar horizontal plane.
2. a kind of stack bus bar with exchange exit according to claim 1, it is characterised in that: the input busbar
It include five layer laminates with the intermediate busbar, from top to bottom successively are as follows: lower layer's insulation board, lower layer's conductor plate, intermediate insulation plate,
Top conductor plate, upper layer insulation board；The exchange switching busbar is exposed copper bar；The alternating current bus bar is the copper for wrapping up insulating layer
Row.
3. a kind of stack bus bar with exchange exit according to claim 1, it is characterised in that: the intermediate busbar
Include four power semiconductor mounting holes；The exchange switching busbar includes two power semiconductor mounting holes and two
A switching mounting hole.
4. a kind of stack bus bar with exchange exit according to claim 1, it is characterised in that: the alternating current bus bar
Horizontal plane includes two switching mounting holes, and the switching installation pore size and aperture exchange switching busbar with described in claim 3
Upper switching mounting hole is corresponding.
5. a kind of stack bus bar with exchange exit described in any one of -4 according to claim 1, it is characterised in that: institute
It states power semiconductor mounting hole packet size and aperture corresponds to the size and installation pin of power semiconductor.
6. a kind of stack bus bar with exchange exit according to claim 1, which is characterized in that the power is partly led
Body device uses IGBT module or SiC MOSFET module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821890859.4U CN209329967U (en) | 2018-11-16 | 2018-11-16 | A kind of stack bus bar with exchange exit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821890859.4U CN209329967U (en) | 2018-11-16 | 2018-11-16 | A kind of stack bus bar with exchange exit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209329967U true CN209329967U (en) | 2019-08-30 |
Family
ID=67710508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821890859.4U Active CN209329967U (en) | 2018-11-16 | 2018-11-16 | A kind of stack bus bar with exchange exit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209329967U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109412430A (en) * | 2018-11-16 | 2019-03-01 | 国网江苏省电力有限公司盐城供电分公司 | A kind of stack bus bar with exchange exit |
| CN110971137A (en) * | 2019-12-18 | 2020-04-07 | 阳光电源股份有限公司 | Inversion module |
-
2018
- 2018-11-16 CN CN201821890859.4U patent/CN209329967U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109412430A (en) * | 2018-11-16 | 2019-03-01 | 国网江苏省电力有限公司盐城供电分公司 | A kind of stack bus bar with exchange exit |
| CN110971137A (en) * | 2019-12-18 | 2020-04-07 | 阳光电源股份有限公司 | Inversion module |
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