CN209133661U - Terahertz frequency mixer and electronic equipment including the frequency mixer - Google Patents
Terahertz frequency mixer and electronic equipment including the frequency mixer Download PDFInfo
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- CN209133661U CN209133661U CN201822260563.0U CN201822260563U CN209133661U CN 209133661 U CN209133661 U CN 209133661U CN 201822260563 U CN201822260563 U CN 201822260563U CN 209133661 U CN209133661 U CN 209133661U
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Abstract
Disclose a kind of Terahertz frequency mixer and the electronic equipment including the frequency mixer.According to embodiment, which includes: cavity, for being respectively formed radio frequency input waveguide and local oscillator input waveguide, and for accommodating suspended mictrostrip, is formed with step on the inner surface of cavity；Suspended mictrostrip, in at least part for forming and being connected across step by semiconductor growing process, suspended mictrostrip extends respectively to radio frequency input waveguide and local oscillator input waveguide institute in the cavity, to be respectively formed the micro-strip antenna for receiving radio-frequency input signals and local oscillator input signals.
Description
Technical field
This disclosure relates to the communications field, and in particular, to Terahertz frequency mixer and the electronic equipment including the frequency mixer.
Background technique
In recent years, Terahertz Technology has at home and abroad been subjected to more and more extensive concern as important field of research.
From the characteristics of atmospheric transmission of THz wave as can be seen that in 183GHz, nearby there are moisture by 320GHz, 380GHz, 664GHz
Sub- absorbing window is the key frequency band for atmospheric sounding humidity contour line；In 94GHz, 140GHz, 220GHz millimeter wave propagation
It is attenuated smaller, is used based on point-to-point communication by low latitude air-to-ground guided missile and ground-based radar.Thus it is directed to these frequency ranges
Research it is extremely important.
No matter THz wave is applied to which aspect and which frequency range, all be unable to do without the reception to THz wave, for
For the most commonly used receiver based on superhet system, realize that the frequency mixer of frequency down conversion effect is one of pass
Key member.In solid-state Terahertz radar and communication etc. in systems, due to low-noise amplifier realize it is more difficult, frequency mixer just at
For the first order of receiving end, so the quality of frequency mixer performance is directly related to the performance of entire receiver system.Meanwhile by
Realize that difficulty is big in same frequency range high performance local oscillator source, so being to solve the problems, such as this effective way using subharmonic mixing technology.
In the frequency mixer that only several classes are operable with Terahertz frequency range, only the Terahertz based on planer schottky diode point is humorous
Wave mixing device is operable with room temperature, without providing such as liquid helium to realize harsh low temperature environment, thus obtains more universal
Application.
For the THz wave segment limit of 100GHz~500GHz, current main receiver scheme first is that superhet
Receiver, especially when frequency is higher than 200GHz, the mixer conversion loss based on silicon base CMOS technique and SiGe CMOS technology
It is larger, be also not suitable for application, so still depending on the Terahertz subharmonic of the GaAs Schottky diode of planar package
Frequency mixer.
The scheme of the Terahertz sub-harmonic mixer of the GaAs Schottky diode of planar package is main in the prior art
Including following several: scheme 1 is by GaAs Schottky diode back bonding on quartz base plate microstrip line, and periphery is metal
Cavity.The program is simple and easy, but disadvantage is also more obvious, and Schottky diode back bonding need to be tied up using conducting resinl or spun gold
It is fixed, the bad control of alignment precision between microstrip line.There is also alignment errors for quartzy microstrip line and metal cavity assembly.Metal
Cavity processing is also gradually increased with the rising difficulty of frequency, some sizes and angle are difficult to realize.Scheme 2 is based on GaAs
Single-chip integration second harmonic mixer link structure (Schottky diode all used with microstrip line GaAs substrate it is synchronous plus
Work), periphery is metal cavity.The program can avoid the alignment issues of diode and microstrip line, but GaAs base microstrip line and gold
Belonging to cavity assembly, there is also alignment errors.Overall processing cost is higher relative to scheme 1.Scheme 3 is using silicon-base micro-mechanical work
Skill process chamber structure, Schottky diode and microstrip line still use the usual manner in scheme 1 and scheme 2.The program can be with
The overall weight of frequency mixer is reduced, and can ensure cavity inside dimension simultaneously, but the alignment issues between microstrip line and cavity body structure
Still without being solved very well.
Utility model content
In view of this, the purpose of the disclosure is at least partly that microstrip line and cavity can be guaranteed well by providing one kind
Between alignment precision Terahertz frequency mixer and electronic equipment including the Terahertz frequency mixer.
According to one aspect of the disclosure, Terahertz frequency mixer is provided, comprising: cavity, it is defeated for being respectively formed radio frequency
Enter waveguide and local oscillator input waveguide, and for accommodating suspended mictrostrip, is formed with step on the inner surface of cavity；Suspension
Microstrip line, in at least part for forming and being connected across step by semiconductor growing process, suspended mictrostrip is extended respectively to
Radio frequency input waveguide and local oscillator input waveguide institute in the cavity, are inputted with being respectively formed for receiving radio-frequency input signals and local oscillator
The micro-strip antenna of signal.
According to another aspect of the present disclosure, a kind of electronic equipment is additionally provided, including by above-mentioned Terahertz frequency mixer shape
At integrated circuit.
In accordance with an embodiment of the present disclosure, by using in mixing cavity directly growth form the medium base of suspended mictrostrip
Piece, and determine by photoetching and etching process the size and location of dielectric substrate (i.e. silicon dioxide substrate) and metal layer, thus
Guarantee the alignment precision of suspended mictrostrip and cavity, improves the working performance of suspended mictrostrip frequency mixer.Due to suspended mictrostrip
Dielectric substrate be grown directly upon mixing cavity in, formed with the metal layer of bottom and well contacted, avoid at present use lead
Electric elargol smears the problems such as uneven or there are bubbles, ensure that the controllability of frequency mixer processing technology, improves suspension micro-strip
The working performance of line frequency mixer.Simultaneously as the suspended mictrostrip for being mostly in suspended state is used, to have than normal
The higher Q value of microstrip line is advised, close to non-dispersive.
Detailed description of the invention
By referring to the drawings to the description of the embodiment of the present disclosure, the above-mentioned and other purposes of the disclosure, feature and
Advantage will be apparent from, in the accompanying drawings:
Fig. 1 shows the structural schematic diagram of Terahertz frequency mixer according to an embodiment of the present disclosure；
Fig. 2 a and Fig. 2 b show the illustrated section views according to an embodiment of the present disclosure of the A-A ' interception in Fig. 1；
Fig. 3 shows the illustrated section view according to an embodiment of the present disclosure of the interception of the B-B ' in Fig. 1；
Fig. 4 a and Fig. 4 b show another illustrated section view according to an embodiment of the present disclosure of the interception of the A-A ' in Fig. 1
Figure；
Fig. 5 shows another illustrated section view according to an embodiment of the present disclosure of the interception of the B-B ' in Fig. 1；
Fig. 6 a is to FIG. 6d shows that the schematic diagrames of the process of manufacture Terahertz frequency mixer according to an embodiment of the present disclosure；With
And
Fig. 7 shows the partial enlarged view of Schottky diode according to an embodiment of the present disclosure.
Through attached drawing, the same or similar appended drawing reference indicates the same or similar component.
Specific embodiment
Terahertz frequency mixer according to an embodiment of the present disclosure mainly uses silicon substrate micro-nano technology technique and micromachined
Technique realizes Terahertz single-chip integration formula suspended mictrostrip frequency mixer.Suspended mictrostrip frequency mixer, in structure with conventional micro-strip
Line frequency mixer is similar, and only most of microstrip line bottom is in suspended state, and medium substrate does not contact with ground and is suspended at air
In, so its electromagnetic field is mostly in air, medium influence is little, and effective dielectric constant is close to 1, so that it is special
Property parameter be lost and greatly reduce in line close to the parameter in air, and there is Q value more higher than conventional micro strip line, close to nothing
Dispersion.Integrally-built embodiment about the Terahertz frequency mixer is as shown in Figure 1.
The Terahertz frequency mixer is single-chip integration suspended mictrostrip frequency mixer, mainly includes cavity body structure and suspended mictrostrip
Circuit structure.Cavity is used to be respectively formed radio frequency input waveguide and local oscillator input waveguide, and for accommodating suspended mictrostrip,
It is formed with step on the inner surface of cavity, is used to support the dielectric substrate of suspended mictrostrip.As shown in Figure 1, (can also by silicon substrate
Think GaAs base, embodiment of the disclosure is without being limited thereto) constituting surface, there are the cavity body structures of metal layer, radio frequency input waveguide
Structure 101 and local oscillator input waveguide structure 102.Suspended mictrostrip circuit structure is placed in the cavity that metal layer is surrounded.It is outstanding
It sets microstrip circuitry structure to be formed and be connected across by semiconductor growing process at least part of step, therefore suspends micro-strip
Most of structure of line is in the state to suspend.A part of suspended mictrostrip circuit extends respectively to radio frequency input waveguide and this
Input waveguide institute shake in the cavity, to be respectively formed the microstrip line day for receiving radio-frequency input signals and local oscillator input signals
Line.
Suspended mictrostrip circuit is made of dielectric substrate and conduction band metal, wherein dielectric substrate passes through semiconductor growing work
Skill is formed and is connected across at least part of step, and conduction band metal further passes through semiconductor growing process and is formed in medium base
In at least part of the top surface of piece.As shown in Figure 1, dielectric substrate (such as silica) 110 is formed with, in medium base
The conduction band metal layer 111 of microstrip circuit is formed on piece (such as silica) 110.
In the other embodiments of the disclosure, dielectric substrate can also using nitridation silicon chip or GaAs substrate etc. other
Insulant material, embodiment of the disclosure are without being limited thereto.
Further, the alignment mark comprising Schottky diode bonding on conduction band metal layer 111, on microstrip circuit
It is provided with GaAs Schottky diode 109, wherein diode can may be positive bonding for back bonding, can also lead to
It crosses special process Schottky diode structure is grown directly upon in silicon dioxide substrates, and Schottky-diode metal and suspension
The connection of microstrip line metal.Other parts are constituted in frequency mixer and dimensional parameters can refer to the prior art or other documents or patent.
The course of work of above-mentioned frequency mixer includes needing received terahertz signal, passes through radio frequency input waveguide structure
101, in waveguide-transition-suspended mictrostrip structure, terahertz signal is transferred in the antenna structure 104 of suspended mictrostrip；
The local oscillation signal entered by local oscillator input waveguide port 102, by the microstrip transition structure 107 and local oscillator low pass filtered of duplexer
It after wave device structure 106, is mixed in GaAs Schottky diode 109 with radiofrequency signal, the two of radiofrequency signal and local oscillator
Subharmonic is mixed, the intermediate-freuqncy signal after making the difference, by the arrival medium frequency output end mouth 103 of intermediate-frequency filter structure 108, then by
Additional sub-miniature A connector is transferred in load.In order to avoid Schottky diode pair nonuniformity and the DC bias that generates, by
The ground line configuration 105 for connecing metal cavity is drawn in microstrip circuit.Wherein suspended mictrostrip substrate (i.e. dielectric substrate) 110 is two
Silica structure, the thereon metal 111 to be used to form microstrip circuit.By radio frequency input waveguide 101, local oscillator input waveguide 102
The cavity body structure that the space placed with internal suspended mictrostrip constructs jointly is wrapped up by metal layer, and metal layer periphery is silicon substrate
Matter 112.
Radiofrequency signal and local oscillation signal are transitioned into suspended mictrostrip and through corresponding pair net respectively from respective port feed-in
It is loaded on mixer diode after network, since local oscillation signal frequency is lower than prevention at radio-frequency port waveguide cutoff frequency, so local oscillation signal
It will not be leaked from prevention at radio-frequency port, and radiofrequency signal depositing due to local oscillator low-pass filter (logical local frequency, resistance rf frequency)
Without from local oscillator port leak, to realize the isolation between the two ports.It is double from local oscillator to be mixed the intermediate-freuqncy signal generated
Work device passes through a Microstrip Low-Pass output.
It is illustrated below with reference to particular content of the more specific example to this programme, it should be appreciated that size and ratio in figure
It is merely to illustrate, it is unrelated with actual structure.
It is in Fig. 1 along the section view of A-A ' interception with reference to Fig. 2 a and Fig. 2 b.The suspended mictrostrip structure of the program is same
When be embedded into top wafer 204 and bottom wafers piece 201 inside.Wherein, there is no suspension microstrip circuit ground junctions by Fig. 2 a
There is suspension microstrip circuit ground structure part in structure part, Fig. 2 b.There are groove structures 207 in silicon-based wafer piece 201, and in ditch
Metal layer 208 is grown on the side wall and crystal column surface of slot structure, the silicon-based wafer with the growth metal layer 202 with groove structure
Piece 204 constitutes cavity body structure 206.And there are silicon dioxide layer substrate structures 203 in cavity, grow metal layer 205, structure thereon
At suspension microstrip circuit structure.
It is in Fig. 1 along the section view of B-B ' interception with reference to Fig. 3.It is same scheme with Fig. 2 a and Fig. 2 b.Silicon-based wafer
There is groove structure on piece 301, and grows metal layer 312 in groove and surface；There is groove structure on silicon-based wafer piece 307, and
Groove and surface grow metal layer 309.Metal bonding constitutes cavity body structure 306, wherein radio frequency input waveguide 302, and local oscillator is defeated
Enter waveguide 303 and suspended mictrostrip cavity portion 311 to be bonded by upper and lower two panels silicon-based wafer piece 301 and 307 and constituted, Ke Yi
It is spatially reversed to draw, as shown in Figure 1.There are silicon dioxide layer substrate structures 304 in cavity, grow metal layer 305, structure thereon
At suspension microstrip circuit structure.Schottky diode is placed on suspended mictrostrip to 310, and its intermediate frequency output port 308 is then
It is drawn in side.
It is in Fig. 1 along another exemplary scenario of the section view of A-A ' interception, suspended mictrostrip with reference to Fig. 4 a and Fig. 4 b
It is embedded into inside bottom wafers piece 401.Wherein, there is no suspension microstrip circuit ground structure parts, Fig. 4 b there is suspension by Fig. 4 a
Microstrip circuit ground structure part.Metal layer 402 is grown on silicon-based wafer piece 401 with groove structure, with growth metal layer
402 silicon-based wafer piece 404 constitutes cavity body structure 406 and 407.And there are silicon dioxide layer substrate structure 403 in cavity,
Upper growth metal layer 405 constitutes suspension microstrip circuit structure.
It is in Fig. 1 along the section view of B-B ' interception with reference to Fig. 5.It is same scheme with Fig. 4 a and Fig. 4 b.Silicon-based wafer
There is groove structure on piece 501, and grows metal layer 509 in groove and surface；There is groove structure on silicon-based wafer piece 507, and
Groove and surface grow metal layer 509.Metal bonding constitutes cavity body structure, wherein radio frequency input waveguide 502, local oscillator incoming wave
Lead 503 and suspended mictrostrip cavity portion 511 be bonded by upper and lower two panels silicon wafer 501 and 507 and constituted, can be spatially
It is reversed to draw, as shown in Figure 1.There are silicon dioxide layer substrate structures 504 in cavity, grow metal layer 505 thereon, constitute micro-strip
Circuit structure.Schottky diode is placed on suspended mictrostrip to 510, and its intermediate frequency output port 508 is then drawn in side.
It is easily understood that can be according to the needs of actual design, and silicon-based monolithic is integrated suspended mictrostrip and mixed by selection
The inside suspended mictrostrip structure of frequency device is embedded into the wafer space of top or in bottom wafers piece space.
In addition, silicon-based monolithic integrates the DC earthing part of suspended mictrostrip frequency mixer, it can be from the side of suspended mictrostrip
Side is drawn, and can be drawn in other positions (such as can be between radio frequency input waveguide mouth and local oscillator input waveguide mouth), this
It is open not limit this.But when other positions are drawn, need to match re-optimization to the overall impedance of suspended mictrostrip.
Below with reference to Fig. 6 a to Fig. 6 d, by taking the structure of the frequency mixer in Fig. 2 a, Fig. 2 b and Fig. 3 as an example, to the system of frequency mixer
The method of making is illustrated.
With reference to Fig. 6 a, the cavity body structure of frequency mixer and the support knot of internal microstrip circuit are prepared using high resistant Silicon Wafer 601
Structure.The resistivity of the high resistant Silicon Wafer is 1~10K Ω .cm, with a thickness of 100 microns~2000 microns.It is carved first by deep trench
Erosion technology carries out etching groove to high resistant silicon wafer 601, since the depth of deep groove structure is different, it may be necessary to individually carve
Erosion, can also be by deep width adjustment, while carrying out etching groove.Etching groove depth can be 30 microns~1500 microns,
The range of groove tilt angle is 88 °~90 °, and specific size need to determine jointly according to standard rectangular waveguide mouth and design parameter.
After etching two deep groove structures, the modes such as angle sputtering or vapor deposition can be used and grow metal, guarantee in silicon wafer 601
Trenched side-wall and surface all form metal layer 602, metal layer is grown to the thickness of needs using schemes such as plating later, about
0.5 micron~5 microns, guarantee electromagnetic transmission ingratiates with depth.Then expendable material or barrier layer are grown on surface, then used
CMP process ties on surface to metal layer.Expendable material 603 is filled in this way in deep groove structure, in shape below
It is clean at needing to corrode when waveguide input port.Fig. 6 a provides the step process in the section of the position A-A ' and B-B ' of Fig. 1 respectively
Schematic diagram.
With reference to Fig. 6 b, on the basis of upper step process, layer of silicon dioxide layer 604, thickness about 10 microns~100 are grown
Between micron, since growth thickness is thicker, the gas of low-pressure chemical vapour deposition technique or plasma enhanced chemical can be used
The growth of phase sedimentation, the in this way silicon dioxide layer fine and close can be grown on metal and expendable material.Then pass through light
Remaining material for not needing silicon dioxide region is corroded, and cleaned up by carving technology.Then, it then by sputtering or steams
The modes such as plating grow metal, guarantee that 604 surface of silicon dioxide layer all forms metal layer 605, later will be golden using schemes such as plating
Belong to the thickness that layer grows to needs, about 0.5 micron~5 microns, guarantee electromagnetic transmission ingratiates with depth.Then pass through photoetching again
Remaining region for not needing metal is corroded or is removed, and cleaned up by technique.Silicon dioxide layer 604 and metal in this way
Layer 605 just constitutes microstrip line construction.The specific thickness of silicon dioxide layer 604 and the thickness of dimension of picture and metal layer 605
And dimension of picture, it can be determined according to overall system design index.Fig. 6 b provides the step process in the A-A ' and B-B ' of Fig. 1 respectively
The schematic cross-section of position.
With reference to Fig. 6 c, on the Process ba- sis of upper step, to the expendable material 603 in 601 deep groove structure of silicon wafer into
Row corrosion, and guarantee to clean up.After expendable material corrosion, the silicon dioxide layer 604 and metal of 606 top of groove structure
Layer 605 will be in suspended state, and bottom does not have metal-layer structure, thus can directly according to requiring to be designed structure,
To form suspended mictrostrip antenna structure, the radiofrequency signal and local oscillation signal to input were provided to suspended mictrostrip transmission
It crosses.Meanwhile the cavity body structure of frequency mixer is prepared with another high resistant Silicon Wafer 607.The resistivity of the high resistant Silicon Wafer be 1~
10K Ω .cm, with a thickness of 100 microns~2000 microns.High resistant silicon wafer 607 is carried out by deep plough groove etched technology first
Etching groove needs to carry out etching groove: radio frequency input waveguide mouth region domain 610, local oscillator input waveguide mouth to three regions respectively
Cover area 609 on region 611 and suspended mictrostrip cavity.Since the depth of deep groove structure is different, it may be necessary to individually carve
Erosion, can also be by deep width adjustment, while carrying out etching groove.Etching groove depth can be 30 microns~1500 microns,
The range of groove tilt angle is 88 °~90 °, and specific size need to determine jointly according to standard rectangular waveguide mouth and design parameter.
After etching three deep groove structures, the modes such as angle sputtering or vapor deposition can be used and grow metal, guarantee in silicon wafer 607
Trenched side-wall and surface all form metal layer 608, metal layer is grown to the thickness of needs using schemes such as plating later, about
0.5 micron~5 microns, guarantee electromagnetic transmission ingratiates with depth.Fig. 6 c provides the step process in the A-A ' and B-B ' of Fig. 1 respectively
The schematic cross-section of position.
With reference to Fig. 6 d, on the basis of upper step process, silicon wafer 607 is aligned with the inversion of silicon wafer 601, can be passed through
Location hole or photoetching alignment mark etc. guarantee precision controlling within 1~5 micron.After alignment, wafer grade low-temp gold gold can be used
Two pieces of wafers are bonded by the techniques such as diffusion interlinked completely；Golden gold diffusion bonding technology can also be carried out to single mixer unit,
Upper layer and lower layer wafer is bonded completely.In this way, etching and growing before being utilized respectively after by the alignment bonding of upper and lower groove structure
The structure of metal layer forms radio frequency input waveguide mouth 610, local oscillator input waveguide mouth 611 and suspended mictrostrip cavity upper cover
Region 609.Medium frequency output end 612 is yet formed in the other end.In overall structure, the cavity knot gathered around there are three port is formd
Structure, three ports respectively correspond the input of 101 radio frequencies in Fig. 1, the input of 102 local oscillators, the output of 103 intermediate frequencies.And it is same in the cavity
There are radio frequency input short face and local oscillator input short face, specific sizes to be adjusted according to design requirement for sample.
It should be noted that the waveguide mouth of the lead direction and local oscillator input waveguide of the waveguide mouth of radio frequency input waveguide draws
Out direction can the normal direction of plane parallel (face H probe) where with suspended mictrostrip or with suspended mictrostrip place plane
Normal is vertical (face E probe).
It is the partial enlargement diagram of Fig. 1 Schottky diode portion with reference to Fig. 7.It is grown in silica substrate 701
Metal layer 702 has been integrally formed suspended mictrostrip structure.703 back bonding of Schottky diode need to be tied up using conducting resinl or spun gold
Calmly, or in preparation process in front, Schottky diode structure is directly grown on silica 701 by special process
703.If Schottky diode needs to be bonded, after and photoetching good in the growth of metal layer 702, according to by Schottky to be used
Diode outer dimension makes alignment mark 704 on metal layer 702, which can be metal pattern, or
The insulation artworks such as silica, the pattern can be cross shape marks, or other facilitate alignment two pole of Schottky
The label of pipe.The alignment mark can limit the placement location of Schottky diode, and determine that angle offset is controllable.Then it adopts again
Schottky diode is fixed on suspended mictrostrip with the means such as conducting resinl or spun gold binding.
In accordance with an embodiment of the present disclosure, silicon dioxide substrate is grown directly upon in mixer chamber body, and photoetching can be passed through
And etching process determines the size and location of silicon dioxide substrate and metal layer, to guarantee the alignment of suspended mictrostrip and cavity
Precision improves the working performance of suspended mictrostrip frequency mixer.
In accordance with an embodiment of the present disclosure, silicon dioxide substrate is grown directly upon in mixer chamber body, bottom is by groove
The structure on two sides of structure supports, and is formed with metal layer and well contacted, avoid at present using conductive silver glue smear unevenly or
The problems such as there are bubbles ensure that the controllability of frequency mixer processing technology, improve the working performance of suspended mictrostrip frequency mixer.
In accordance with an embodiment of the present disclosure, Schottky diode is to be directly grounded structure, using metal layer lithography and corrosion etc.
Technique enables its metal layer short circuit with suspended mictrostrip side, can accurately control the outer dimension of short-circuit line, avoid conduction
The introducing of the techniques uncertain factor such as elargol or spun gold binding provides for the consistency of frequency mixer early period design and performance test
Powerful guarantee.
Frequency mixer cavity body structure according to an embodiment of the present disclosure is compared using the silica-base material based on micromachined
Current brass material greatly reduces the overall weight of cost and device；Suspended mictrostrip is using silica or silicon nitride etc.
Insulating materials very well with silicon-based technology compatibility while guaranteeing the stability of technique, reduces processing cost；In addition,
Such silicon substrate frequency mixer device, can also or passive device active with other be directly integrated, such as low-noise amplifier, wave detector,
With peripheral biasing circuit etc..Place mat early period has been carried out for further system integration.
Frequency mixer cavity body structure according to an embodiment of the present disclosure can be accurately controlled using deep plough groove etched technique
The size of internal cavity breaches the Limits properties of metal cavity small size processing, provides for the frequency mixer application of higher frequency
Mentality of designing.Frequency mixer cavity body structure in the utility model, can also be with quartz base plate suspended mictrostrip or single-chip integration arsenic
Gallium substrate suspended mictrostrip is applied in combination, and silicon-based monolithic according to an embodiment of the present disclosure integrates suspended mictrostrip frequency mixer type
It does not limit.It can be the passive frequency mixers such as single-ended, singly balanced, double flat weighing apparatus, three balances or I/Q, be also possible to Active multiplier.
Greatly improve the flexibility of system design.
It can be applied to various electronic equipments according to the Terahertz frequency mixer of the embodiment of the present disclosure.For example, by integrated more
A such frequency mixer and other devices (for example, transistor etc. of other forms), can form integrated circuit (IC), and by
This building electronic equipment.Therefore, the disclosure additionally provides a kind of electronic equipment including above-mentioned Terahertz frequency mixer.Electronic equipment
Can also include and the components such as the display screen of integrated circuit cooperation and the wireless transceiver cooperated with integrated circuit.This electricity
Sub- equipment such as smart phone, computer, tablet computer (PC), wearable smart machine, mobile power source etc..
In addition, silicon-based monolithic integrated device structure and mode are not limited to the application of frequency mixer, it is also applicable in frequency multiplier
In.
Compared with the existing technology, the utility model Terahertz silicon-based monolithic integrates suspended mictrostrip frequency mixer, mixed improving
While frequency device machining accuracy, device weight and cost are reduced, improves frequency mixer performance, and is its further systematization collection
At providing advantage.
Although having been combined preferred embodiment of the present application above shows the application, those skilled in the art will
Will be appreciated that, in the case where not departing from spirit and scope, the application can be carry out various modifications, replace and
Change.Therefore, the application should not be limited by above-described embodiment, and should be limited by appended claims and its equivalent.
Claims (13)
1. a kind of Terahertz frequency mixer, comprising:
Cavity, for being respectively formed radio frequency input waveguide and local oscillator input waveguide, and for accommodating suspended mictrostrip, described
Step is formed on the inner surface of cavity；
Suspended mictrostrip is formed by semiconductor growing process and is connected across at least part of the step, the suspension
Microstrip line extends respectively to the radio frequency input waveguide and local oscillator input waveguide institute in the cavity, to be respectively formed for connecing
Receive the micro-strip antenna of radio-frequency input signals and local oscillator input signals.
2. Terahertz frequency mixer according to claim 1, wherein the suspended mictrostrip includes:
Dielectric substrate, the dielectric substrate are formed by semiconductor growing process and are connected across at least part of the step
On；
Conduction band metal, the conduction band metal are formed in the top surface of the dielectric substrate at least by semiconductor growing process
In a part.
3. Terahertz frequency mixer according to claim 2, wherein the dielectric substrate includes silicon dioxide substrates, nitridation
Silicon chip or GaAs substrate.
4. Terahertz frequency mixer according to claim 2, wherein the dielectric substrate with a thickness of 10 μm~100 μm.
5. Terahertz frequency mixer according to claim 2, wherein the cavity is formed by silicon substrate or GaAs matrix,
It is formed with groove structure on the silicon substrate or the GaAs matrix, in the silicon substrate or the GaAs matrix
It is formed with metal layer on the side wall of side surface and the groove, by bonding together to form the cavity between the metal layer.
6. Terahertz frequency mixer according to claim 5, wherein the conduction band metal is electrically connected with the metal layer.
7. Terahertz frequency mixer according to claim 5 or 6, wherein the thickness of the metal layer is according to electromagnetic transmission
Ingratiate with depth requirements determine.
8. Terahertz frequency mixer according to claim 5 or 6, wherein the metal layer with a thickness of 0.5 μm~5 μm.
9. Terahertz frequency mixer according to claim 5 or 6, wherein the groove structure includes being used to form described penetrate
The first groove of frequency input waveguide and the second groove for being used to form the local oscillator input waveguide, the depth side of the first groove
To parallel with the normal direction of plane where the suspended mictrostrip with the depth direction of the second groove.
10. Terahertz frequency mixer according to claim 9, wherein the extraction side of the waveguide mouth of the radio frequency input waveguide
To parallel with the normal direction of plane where the suspended mictrostrip with the lead direction of the waveguide mouth of the local oscillator input waveguide
Or it is vertical with the normal of plane where the suspended mictrostrip.
11. Terahertz frequency mixer according to claim 5, further includes:
Schottky diode, the Schottky diode back bonding or front are bonded on the dielectric substrate, or are passed through
Semiconductor growing process is formed on the dielectric substrate, and the Schottky diode is electrically connected with the conduction band metal.
12. Terahertz frequency mixer according to claim 11, wherein it is provided with alignment mark on the conduction band metal,
The alignment mark when being bonded the Schottky diode for being aligned.
13. a kind of electronic equipment, integrated including being formed as the Terahertz frequency mixer as described in any one of claim 1~12
Circuit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201822260563.0U CN209133661U (en) | 2018-12-29 | 2018-12-29 | Terahertz frequency mixer and electronic equipment including the frequency mixer |
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| CN201822260563.0U CN209133661U (en) | 2018-12-29 | 2018-12-29 | Terahertz frequency mixer and electronic equipment including the frequency mixer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109509953A (en) * | 2018-12-29 | 2019-03-22 | 清华大学 | Terahertz frequency mixer and its manufacturing method and electronic equipment including the frequency mixer |
| EP3846284A1 (en) * | 2019-12-31 | 2021-07-07 | Tsinghua University | Device for mixing or multiplying frequency |
-
2018
- 2018-12-29 CN CN201822260563.0U patent/CN209133661U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109509953A (en) * | 2018-12-29 | 2019-03-22 | 清华大学 | Terahertz frequency mixer and its manufacturing method and electronic equipment including the frequency mixer |
| WO2020134332A1 (en) * | 2018-12-29 | 2020-07-02 | 清华大学 | Terahertz mixer, method for manufacturing same, and electronic device comprising same |
| CN109509953B (en) * | 2018-12-29 | 2023-09-15 | 清华大学 | Terahertz mixer, manufacturing method thereof and electronic device comprising terahertz mixer |
| EP3846284A1 (en) * | 2019-12-31 | 2021-07-07 | Tsinghua University | Device for mixing or multiplying frequency |
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